NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: , Ltd Package TO-3P TO-220F1 Pin Assignment 1 2 3 G D S G D S Packing Tube Tube , Repetitive (Note 2) EAR 24 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.0 V/ns TO-3P 240 Power Dissipation W TO-220F1 36 PD TO-3P 1.92 °/W Linear Derating Factor above TC = 25° TO-220F1 0.288 , Ambient Junction to Case SYMBOL TO-3P TO-220F1 TO-3P TO-220F1 UNISONIC TECHNOLOGIES CO., LTD , UNISONIC TECHNOLOGIES CO., LTD 10N80 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET ... | Original |
6 pages, |
MOSFET 800V 10A 10N80L 10N80 MOSFET 800V 10A TO-3P mosfet 10a 800v 10N80 abstract |
|
|||
| Abstract: 10N80L-TF1-T 10N80L-TF1-T 10N80G-TF1-T 10N80G-TF1-T Package TO-3P TO-220F1 www.unisonic.com.tw Copyright © 2010 Unisonic , ) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.0 V/ns TO-3P 240 Power Dissipation W TO-220F1 36 PD TO-3P 1.92 °/W Linear Derating Factor above TC = 25° TO-220F1 0.288 Junction , to Case SYMBOL TO-3P TO-220F1 TO-3P TO-220F1 JA JC RATINGS 40 62.5 0.52 3.47 , UNISONIC TECHNOLOGIES CO., LTD 10N80 10N80 Power MOSFET 800V N-CHANNEL POWER MOSFET DESCRIPTION ... | Original |
6 pages, |
MOSFET 800V 10A MOSFET 800V 10A TO-3P 10n80 10N80 10N80 abstract |
|
|||
| Abstract: ) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXFA) VDSS ID25 TO-3P (IXFQ) RDS(on) trr G G D S S G D (TAB) DS = 800V = 10A 1.1 250ns D , Weight TO-263 TO-220 TO-3P TO-247 2.5 3.0 5.5 6.0 g g g g (TO-220,TO-247) Symbol , TO-3P) 癈/W 癈/W 0.50 0.25 Source-Drain Diode Symbol Test Conditions (TJ = 25癈, Unless , IXFP10N80P IXFP10N80P IXFQ10N80P IXFQ10N80P TO-220 (IXFP) Outline TO-263 (IXFA) Outline TO-3P (IXFQ) Outline 1. 2. 3. ... | Original |
5 pages, |
MOSFET 800V 10A TO-3P 10n80 IXFQ10N80P IXFA10N80P 10N80P IXFP10N80P IXFH10N80P IXFA10N80P abstract |
|
|||
| Abstract: 15V YES 3.0 10A TO-3P RJH1CF7RDPK 1200V 60A 35A 1.85V 35A 15V YES 3.0 10A TO-3P RJH1CF6RDPK 1200V 55A 30A 1.80V 30A 15V YES 3.0 10A TO-3P RJH1CF5RDPK 1200V 50A 25A 1.95V 25A 15V YES 4.2 10A TO-3P RJH1CF4RDPK 1200V 40A 20A 2.00V 20A 15V YES 4.5 10A TO-3P High-Speed , 150 1500 30 300 50 TO-3P 125 20 200 50 TO-3PFM TRIACs and Thyristors ... | Original |
8 pages, |
RJK06 NP88N04NUG TO-220 Triac 16A 800V CR05BM CR5AS UPA2350BT1G triac 1200V 50A RJH60F7ADPK RJH60F5DPK RJH1CF5 uPA2719AGR BCR30KM-8LB BCR25KR rjh60d7 datasheet abstract |
|
|||
| Abstract: 6 www.fairchildsemi.com FQA10N80C FQA10N80C 800V N-Channel MOSFET Mechanical Dimensions TO-3P , switching 100% avalanche tested Improved dv/dt capability D G TO-3P FQA Series G DS S , FQA10N80C FQA10N80C TO-3P - - 30 FQA10N80C FQA10N80C FQA10N80C FQA10N80C_F109 TO-3PN - - 30 , QFET ® FQA10N80C FQA10N80C 800V N-Channel MOSFET Features Description · · · · · · These , - °C/W - 40 °C/W www.fairchildsemi.com FQA10N80C FQA10N80C 800V N-Channel MOSFET ... | Original |
9 pages, |
mosfet 10a 800v high power FQA10N80C F109 mosfet 10a 800v MOSFET 800V 10A FQA10N80C abstract |
|
|||
| Abstract: Number Lead Free 10N80L-T3P-T 10N80L-T3P-T Halogen Free 10N80G-T3P-T 10N80G-T3P-T Package TO-3P Pin Assignment 1 2 , ) T3P: TO-3P (3)Lead Plating (3) G: Halogen Free, L: Lead Free, Blank: Pb/Sn , UNISONIC TECHNOLOGIES CO., LTD 10N80 10N80 Power MOSFET 800V N-CHANNEL POWER MOSFET DESCRIPTION , MOSFET ABSOLUTE MAXIMUM RATINGS (TC =25°, unless otherwise specified) PARAMETER SYMBOL RATINGS , : Pulse width limited by maximum junction temperature. 3. L=17.3mH, IAS=10A, VDD=50V, RG=25, Satarting ... | Original |
6 pages, |
mosfet 10a 800v 10N80L VDD400 10n80 transistor MOSFET 800V 10A TO-3P MOSFET 800V 10A 10n80 10N80 10N80 abstract |
|
|||
| Abstract: Extended Safe Operating Area · Lower Leakage Current: 25uA (Max.) @ VDS = 800V · Lower RDS(ON): 0.746 (Typ.) RDS(ON) = 0.95 ID = 10A TO-3P 1 2 3 1. Gate 2. Drain 3. Source ABSOLUTE , 6 VDD TO-3P Package Dimensions TO-3P (FS PKG CODE AF) 15.60 ±0.20 3.00 ±0.20 3.80 , N-CHANNEL POWER MOSFET SSH10N80A SSH10N80A FEATURES BVDSS = 800V · Avalanche Rugged Technology , SSH10N80A SSH10N80A N-CHANNEL POWER MOSFET ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified ... | Original |
8 pages, |
SSH10N80A MOSFET 800V 10A mosfet 10a 800v fs mosfet 10a 800v SSH10N80A abstract |
|
|||
| Abstract: 15 17 18 20 20 / TO-3P H IS 50W TO-3P LH 200W 2SD2599 2SD2599 2SD2586 2SD2586 , 2SC5612 2SC5612 22 4 IF AV A 3 VRRM V DO-201AD DO-201AD 5 TO-220NIS TO-3P IS H , TPS 0.8A 2A TPL 2SC5368 2SC5368 TO-220 NIS TO-220 FL TO-3P N 2SC4754 2SC4754 2SC5459 2SC5459 2SC5353 2SC5353 , TO-3P L PW-MINI 20 900 18 2SK2998 2SK2998 TO-92MOD NPM TO-3P N TO-220FL/SM TO-3P NIS TPS PW-MOLD TO-3P(SM) DP Max. DS ON R V-FRD IF AV A 0.5 DO-41SS DO-41SS ... | Original |
23 pages, |
ta7347p 2sc5027 TA8427K 2sc5570 5TUZ47 TA7607AP TMP87CM38N f062dsl TA1222 tb1238 an tb1226dn 2sc5331 ta1300n F1814B TB1238BN datasheet abstract |
|
|||
| Abstract: offered for applications ranging from 10A to 40A in TO-220, TO247 and TO-3P discrete packages, as well , /W 0.65 °C/W 0.42 °C/W 0.42 °C/W 0.31 °C/W 0.31 °C/W Package TO-220 TO-263 TO-247 TO-3P TO-220 TO-263 TO-247 TO-3P TO-247 TO-268 TO-247 TO-268 * Samples and datasheets available 1/05. , Leaded TO-263 TO-264 SOT-227B TO-220 Overmolded TO-220 TO-3P ISOLPUS247 ISOLPUS247 TO-268 PLUS220 PLUS220 PLUS247 PLUS247 , The high peak current capability of the IX6R11 IX6R11 enables the drive of larger MOSFET and IGBT die ... | Original |
4 pages, |
MESFET 24A 30N60P 4N60 Discrete IGBTS 5n60p IXYS 16N50P mosfet IXFC16N50P IXE611 AVALANCHE DIODE 6A 1700V mosfet 1200V 40A 5N50 IXYS SCR MODULE Gate Drive thyristor family datasheet abstract |
|
|||
| Abstract: TO-247AC (TO-3P) Plastic Package The HEXFET® technology ¡s the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of , Outline TO-247AC (TO-3P) Dimensions in Millimeters and linches) C-585 C-585 IRFPE40 IRFPE40, IRFPE42 IRFPE42 Devices 11E D I 4 , Product Summary Part Number bvdss RDS(on) lD IRFPE40 IRFPE40 800V 2.0(2 5.3A IRFPE42 IRFPE42 800V 2.40 4.8A FEATURES: â- , die Modiüed MOSFET symbol showing the interna] inductances Lg Internal Source Inductance AU 13 nH ... | OCR Scan |
8 pages, |
600V N-Channel MOSFET TO-3P C586 IRFPE40 T-39-13 T-39-13 abstract |
|
|||