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V62/11601-01YE-T Texas Instruments HALF BRDG BASED MOSFET DRIVER visit Texas Instruments
UCC27211ADRM Texas Instruments IC HALF BRDG BASED MOSFET DRIVER, MOSFET Driver visit Texas Instruments
HIP6601BCBZ Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
HS0-4424RH-Q Intersil Corporation BUF OR INV BASED MOSFET DRIVER visit Intersil
ISL6596CBZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; DFN10, SOIC8; Temp Range: See Datasheet visit Intersil Buy
ISL6605IRZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet visit Intersil Buy

MOSFET 1200v 30a

Catalog Datasheet MFG & Type PDF Document Tags

p623f

Abstract: 600V1200V high performance + hyper fast FRED 1200V 1200V 1200V 1200V 25A 25A 25A 25A with capacitor: MOS-FET P722-F64-PM P722-F74-PM high performance 600V 600V 30A 30A high speed IGBT , Standard- and high speed IGBT´s or MOS-FET Ultra low inductive design Vincotech - Power Flow Through for , 30A 30A high speed IGBT P623-F04-PM P623-F14-PM high performance 600 V 600 V 60A 60A , 1200V 1200V 1200V 1200V 25A 25A 25A 25A part â'" number V23990MOS-FET P622-F64-PM
Vincotech
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p623f 600V1200V V23990-P62 P623-F24-PM P624-F24-PM P625-F24-PM P629-F44-PM

H-Bridge

Abstract: p623f fast FRED 1200V 1200V 1200V 1200V 25A 25A 25A 25A with capacitor: MOS-FET P722-F64-PM P722-F74-PM high performance 600V 600V 30A 30A high speed IGBT P723-F04-PM P723-F14-PM high , Standard- and high speed IGBT´s or MOS-FET Ultra low inductive design Vincotech - Power Flow Through for , fastPACK0-H V23990-P62x-Fxx-U-02-14 Module Types Voltage Current 600V 600V 30A 30A high , P729-F54-PM high performance P729-F56-PM high performance + hyper fast FRED 1200V 1200V 1200V 1200V
Vincotech
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H-Bridge P629-F46-PM P629-F54-PM P629-F56-PM P729-F44-PM P729-F46-PM

transistor 12n60c

Abstract: 12N60c equivalent 1200V 1200V 1200V 150V 2x34A 2x30A 9A 17A 30A 30A 15A 30A 30A 60A 2x30A 0.85V 0.91V , , SCH FRED h e Wo Rs!!! T IFIE RECT PRODUCT PART NUMBER MOSFET IXFR 180N07 IXFR 180N085 , 105A 56A 71A 90A 105A 83A 48A 75A 13A 24A 30A 43A 48A 24A 37A 7.5A 13A 21A 28A 24A , 600V 600V 600V 600V 600V 600V 1200V 1200V 1200V 15A 48A 42A 45A 75A* 75A* 70A 70A , 40N60CD1 IXSR35N120B01 IXDR 30N120D1 600V 600V 600V 600V 600V 1200V 1200V 75A 42A 45A 70A
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IXLF19N250A transistor 12n60c 12N60c equivalent 13N50 equivalent 12n60c MOSFET 1000v 30a MOSFET 1200v 30a ISOPLUS247TM PLUS247TM- 180N10 PLUS247TM ISOPLUS220TM FBO16-08N

smps with uc3842 and tl431

Abstract: mc34063 step down with mosfet DDP6V8 / BZYxx Input rect. Bridge - 1000V / 35A; 600V/35A Input Rect. Bridge - ; 1200V, 30A (3 , Input Rect. Bridge 1200V /30A (3-ph.) Input Rect. Bridge - Thyristor - Diode Module Soft Start - , , E2Prom, PWM-Timer, etc. Fast Mosfet Max220 / TO247 / TO220/ ISOWATT218 8A, 2x300V Hyperfast Diode / Low , Current loop control Fast Mosfet Max247 /Max220 /TO247 / TO220/ ISOWATT218 New Mosfet Technology: less Si-Area, Low Cgs, high dV/dt Demagnetisation Diode / Snubber Diode Turboswitch 600V /1200V very fast
STMicroelectronics
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smps with uc3842 and tl431 mc34063 step down with mosfet mc34063 step up with mosfet MC34063 MOSFET UC3842 step up converter mc34063 step down 5a BF3510TV BHA/K3012TV 600CW AVS08 L6560/A

tyco igbt module 25A

Abstract: 2kw pfc ) V23990-P629-F56-PM1) 3) 600V 600V 600V 600V 600V 600V 600V 600V 600V 1200V 1200V 1200V 1200V 30A 30A 60A 60A 60A 60A 50A 75A 100A 25A 25A 25A 25A 400kHz 400kHz 250kHz 250kHz 250kHz , covers a broad power spectrum, ranging from 5A to 450A at 600V and 1200V. Vincotech Fast Power Modules are available in 2 different standard housings for up to 100A at 600V and 1200V and are suitable for switching frequencies of up to 400kHz at 600V and 50kHz at 1200V. fastPACK 0 H 2nd gen W W
Vincotech
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tyco igbt module 25A 2kw pfc tyco igbt module 25A 1200V mosfet 600V 60A mosfet 600V 30A 2kw mosfet P623-P629 V23990-P622-F64-PM V23990-P622-F74-PM1 V23990-P623-F-PM2 V23990-P623-F04-PM V23990-P623-F10-PM1

IRU1239SC

Abstract: iru1239 MTK MODULES 3 1200V 100.000A MTK MODULES 3 1200V 100.000A MTK MODULES 3 1600V 100.000A MTK MODULES , Phase Bridge in a INT-A-Pak package 3 1000V 3 Phase Bridge in a INT-A-Pak package 3 1200V 3 Phase Bridge in a INT-A-Pak package 3 1200V 3 Phase Bridge in a INT-A-Pak package 3 1400V 3 Phase Bridge in a , 1000V 3 Phase Bridge in a INT-A-Pak package 3 1200V 3 Phase Bridge in a INT-A-Pak package 3 1200V 3 , 110A Schottky Common Cathode Diode in a D6120 8-SM package 3 1200V 3 Phase Bridge in a INT-A-Pak
Shenzhen Shouhe Technology
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IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 100MT160PAPBF 100MT160PA 100MT160PBPBF T85HFL60S05 T85HFL80S05 T90RIA10

10-FZ06NBA075SA-P916L33

Abstract: Excellent performance for 1200V applications Dual Booster (IGBT) flowBOOST 0: Different applications , symmetric boosters equipped with MOSFET or IGBT switches. The table below lists the power modules we have , V23990-P629-F68-PM 1200V 2x 120mâ"¦ 2x 40A Symmetric Booster (IGBT) â'¢ Semikron Equivalent CoolMOSTM , -FZ06NBA030SA-P914L33 Vincotech GmbH Biberger StraÃe 93 82008 Unterhaching Germany 2x 600V 2x 600V 30A CoolMOSTM + , -FZ06NBA075SA-P916L33 2x 600V 75A IGBT3 â'¢ 600V devices are used to provide 1200V total voltage capability at
Vincotech
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10-FZ06NBA075SA-P916L33 V23990-P621-F68-PM 10-FZ06NBA045FH-P915L 10-FZ06NBA030SA-P914L33 10-FZ06NBA050SA-P915L33
Abstract: ¼»3pinï¼½ SCTMU001F SCT2120AF 1200V 120A BVDSS 400V TO-247 ï¼»3pinï¼½ Source MOSFET ̶ Ì , SiC MOSFET Mass Produced TO-247 ï¼»3pinï¼½ Mass Produced Switching loss reduced by 85 , (200A to 400A) 4 1200V rated voltage / 120A rated current 50% less volume 21mm *Compared , BVDSS Package Drain Gate Gate ID 4 Si-Super Junction MOSFET SiC MOSFET 0 50 , ohms even at 120° C 6 BSM180D12P2C101 30 20 100 Si MOSFET 8 2 SiC MOSFET ROHM
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56P6733E 1500SG
Abstract: Current 100 170 30 1.6 2.3 IF = 30A, VR = 1200V di/dt =1200A/µs µA A 1.8 3 288 , APTMC120TAM33CTPAG VDSS = 1200V RDSon = 33mΩ max @ Tj = 25°C ID = 78A @ Tc = 25°C Triple phase leg SiC MOSFET Power Module Application â'¢ Welding converters â'¢ Switched Mode Power Supplies â'¢ Uninterruptible Power Supplies â'¢ Motor control Features â'¢ SiC Power MOSFET - High , â'¢ Low profile â'¢ RoHS Compliant APTMC120TAM33CTPAG Absolute maximum ratings (per SiC MOSFET Microsemi
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APT0502

MOSFET 40A 600V

Abstract: 800V 40A mosfet APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 55m @ Tj = 25°C Application · Uninterruptible Power Supplies Features · SiC Power MOSFET - Low , Thermal Resistance IF = 30A Test Conditions VR=1200V Tj = 25°C Tj = 175°C Tc = 125°C Min 1200 Typ , = 30A, VR = 1200V di/dt =1500A/µs f = 1MHz, VR = 200V f = 1MHz, VR = 400V 0.50 °C/W , °C unless otherwise specified Q1 to Q4 Absolute maximum ratings (per SiC MOSFET) Tc = 25°C Tc = 80
Microsemi
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MOSFET 40A 600V 800V 40A mosfet mosfet 1200V 40A

95A sensor hall

Abstract: celduc d31c2110 electromechanical. These relays are designed to switch current up to 30A without the need of heatsink. Relays with , current 30A 12-420VAC Control voltage I2t 20-30VDC 265A2s Protec. Dimensions mm , 1200V Control voltage Input R 4-30VDC 12-30VDC 5-30VDC I2t Protec. Dimensions mm , 600V 1200V Control voltage 4-30VDC 5-30VDC Input R Dimensions mm I2t 312A2s 312A2s , 24-510VAC 24-510VAC 24-510VAC 24-510VAC 24-510VAC Peak voltage 600V 600V 1200V 1200V 1200V
Celduc Relais
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95A sensor hall celduc d31c2110 d31c2110 sensor hall 95A D41A3100L HALL 95A

mosfet 1200V 40A

Abstract: mosfet 1200V 30a smps Industrial IGBT family features a range of 600V Punch Through And 1200V Non Punch Through (NPT). Solutions , MOSFET solutions are no longer needed when you can design-in the efficiency of an IGBT. - HGTP12N60B3 10 ~ 30A Low Voltage MOSFETs | Our industry leading line of IGBTs come with technical , available. - HGTG40N60C3 HGT1Y40N60C3D* On the reverse side, you'll find 1200V IGBT Selection , requirements. You provide the challenges, we'll provide the solutions. 1200V IGBT SELECTION GUIDE PACKAGE
Intersil
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HGTD3N60A4S HGTD3N60C3S HGTD3N60B3S HGTP20N60A4 mosfet 1200V 30a smps igbt 20A 1200v Igbts guide HGTG11N120CND LC-96585 HGT1S3N60A4S HGT1S3N60A4DS HGTP3N60B3

Electric Welding Machine diagram

Abstract: SWITCHING WELDING SCHEMATIC BY MOSFET InsulatedGate-Bipolar-Transistor (IGBT) was developed. Compared to the MOS-Field-Effect-Transistor (MOSFET) the IGBT has lower , welding machine and switch mode power supply. · The Fast IGBT in 600V and 1200V version is the best , 1200V IGBT³ will be the ideal power switch for the motor-drive Applications ­ with switching , and MOSFET. Fig. 1 shows the cross section of the PT IGBT. n+ emitter Al SiO2 E-Field , of the IGBT backside ­ the Collector ­ is the only difference compared to the MOSFET. Due to the
Infineon Technologies
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SKW30N60HS Electric Welding Machine diagram SWITCHING WELDING SCHEMATIC BY MOSFET welding machine diagram IGBT SCHEMATIC MOSFET FOR 100khz SWITCHING APPLICATIONS schematic welding machine TC100 SGP02N60HS SGP04N60HS SGP06N60HS SGP20N60HS SGW20N60HS
Abstract: °C Tj = 25°C Tj = 175°C IF = 30A, VR = 1200V di/dt =1500A/µs IF = 30A Max 96 168 30 1.6 , APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 49mΩ @ Tj = 25°C Application â'¢ Uninterruptible Power Supplies Features â'¢ SiC Power MOSFET - Low RDS(on) - High temperature performance â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ SiC , specified Q1 to Q4 Absolute maximum ratings (per SiC MOSFET) IDM VGS RDSon PD Continuous Drain Microsemi
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Abstract: switching Speed is specked based on prototype test with the STGF3NC120HD 1200V IGBTs. 3. Maximum voltage is determined by the IGBT/MOSFET used. The 1200V IGBTs that come standard with the board give it a 1200V standoff limit. The maximum recommended voltage is 1500V. Higher voltages may be used if the , switching applications requiring high voltage, low current loads. The installed 1200V IGBTs enable the device to act as a bidirectional, isolated relay with a standoff voltage of 1200V. The on-board driver Resonance Group
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Abstract: APTM120DA68T1G VDSS = 1200V RDSon = 680mΩ typ @ Tj = 25°C ID = 15A @ Tc = 25°C Boost chopper MOSFET Power Module 5 6 11 Application â'¢ â'¢ â'¢ CR1 3 4 Q2 NTC , 25°C VDS =1200V VGS = 0V Tj = 125°C VGS = 10V, ID = 12A VGS = VDS, ID = 2.5mA VGS = ±30 V , Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage VR=1200V , IF = 30A VR = 800V Qrr Reverse Recovery Charge di/dt =200A/µs Tj = 125°C Tj = 25 Microsemi
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APT0406

Abstract: APT0502 APTM120DA68T1G VDSS = 1200V RDSon = 680m typ @ Tj = 25°C ID = 15A @ Tc = 25°C Boost chopper MOSFET Power Module 5 6 11 Application · · · CR1 3 4 Q2 NTC Features · 9 , Threshold Voltage Gate ­ Source Leakage Current Test Conditions Tj = 25°C VDS =1200V VGS = 0V Tj = , DC Forward Current VF Diode Forward Voltage VR=1200V Min 1200 Tj = 25°C Tj = 125°C Tc = 80°C Typ 100 500 trr Reverse Recovery Time IF = 30A VR = 800V Qrr Reverse
Microsemi
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APT0406

RUR30120

Abstract: MOSFET 1200v 30a 1993 30A, 1200V Ultrafast Diode Features â'¢ Ultrafast with Soft Recovery. , vF lF = 30A 2.1 V VF If = 30A,Tc=150°C 1.9 V |R VR= 1200V 100 HA Ir VR= 1200V, Tc=150°C 1 mA lnn lF = 1A, dlp/dt = 100A/ns 110 ns lp = 30A, dlp/dt = 100A/ns - 150 ns tA lp = 30A , [VavlAVAVL - VDD)] Qi & Qz ARE 1000V MOSFET* Vavl \ 'L \ I / 12V FIGURE 7. AVALANCHE ENERGY TEST
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OCR Scan
RUR30120 T0-220AB 1-800-4-HARRIS

APT0406

Abstract: APT0502 APTM120SK56T1G VDSS = 1200V RDSon = 560m typ @ Tj = 25°C ID = 18A @ Tc = 25°C Buck chopper MOSFET Power Module 5 11 6 Application · · Q1 7 AC and DC motor control Switched Mode , Conditions Tj = 25°C VDS =1200V VGS = 0V Tj = 125°C VGS = 10V, ID = 14A VGS = VDS, ID = 2.5mA VGS = , VR=1200V Min 1200 Tj = 25°C Tj = 125°C Tc = 80°C Typ 100 500 trr Reverse Recovery Time IF = 30A VR = 800V Qrr Reverse Recovery Charge di/dt =200A/µs Tj = 125°C Tj = 25
Microsemi
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APT0406

Abstract: APT0502 APTM120DA56T1G VDSS = 1200V RDSon = 560m typ @ Tj = 25°C ID = 18A @ Tc = 25°C Boost chopper MOSFET Power Module 5 6 11 Application · AC and DC motor control · Switched Mode Power , Source Leakage Current Test Conditions Tj = 25°C VDS =1200V VGS = 0V Tj = 125°C VGS = 10V, ID = , Diode Forward Voltage VR=1200V Min 1200 Tj = 25°C Tj = 125°C Tc = 80°C Typ 100 500 trr Reverse Recovery Time IF = 30A VR = 800V Qrr Reverse Recovery Charge di/dt =200A
Microsemi
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