NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: perfect switch, Rqn~ on. 85 This Material Copyrighted By Its Respective Manufacturer HCC/HCF 4016 B , circuit s.l!6,„ I- r-4 • , Respective Manufacturer HCC/HCF 4016 B Typical "ON" characteristics as function of temp, for 1 of 4 , COS/MOS INTEGRATED ^of&b HCC/hcf «IBB CIRCUIT QUAD BILATERAL SWITCH • 20V DIGITAL OR ± 10V PEAK-TO-PEAK SWITCHING • 280n TYPICAL ON RESISTANCE FOR 15V OPERATION • SWITCH ON RESISTANCE MATCHED TO ... | OCR Scan |
8 pages, |
4016B hct 4016 be of ic 4016 MOS 4016 R on 4016 PIN DIAGRAM hct 4016 MOS 4016 for IC 4016 HA 4016 CI 4016 pin diagram of ic 4016 ic 4016 IC 4016 PIN DIAGRAM datasheet abstract |
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| Abstract: C1 and C2. The output impedance (RO) is a function of the ON resistance of the internal MOS switches , translator, and four output power MOS switches. For detailed chip information please refer to the ICL7660S ICL7660S , voltage converter, and two 10uF capacitors. The HI7188 HI7188 datasheet [2] contains information on the HI7188 HI7188, therefore, this discussion will focus on the voltage conversion circuit. 29 +5V 0.1uF 1 NC + , and S3 open, thereby shifting capacitor C1 to C2 such that the voltage on C2 is exactly V+, assuming ... | Original |
3 pages, |
ICL7660S ICL7660 HI7188 ICL7660 equivalent AN9620 HI7188 abstract |
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| Abstract: function of the ON resistance of the internal MOS switches (shown in Figure 2), switching frequency, the , regulator, RC oscillator, voltage level translator, and four output power MOS switches. For detailed chip , The HI7188 HI7188 datasheet [2] contains information on the HI7188 HI7188, therefore, this discussion will focus on the voltage conversion circuit. 29 +5V 0.1uF 1 NC NC 7 3 GND 4.7uF V+ 8 2 , voltage on C2 is exactly V+, assuming ideal switches and no load on C2. The ICL7660S ICL7660S approaches this ... | Original |
3 pages, |
ICL7660S ICL7660 HI7188 icl7660 harris AN9620 AN9620 abstract |
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| Abstract: Each matrix or core cell contains 5 N-channel and 5 P-channel MOS transistors arranged as 3 and 2 , ir n II ° (/> -o Å' ^ LU „ o o- IL ° IL -+-o O-^- lr n ir o- IL ° IL -i-O O-1- o o -o 5 o- -r° T" , comprised of five sections: bond pad, input protection, a buffer containing 9 N-channel and 10 P-channel MOS , (Dependant on Package) -55 + 125 °C Lead Temperature During Soldering (10 seconds max) + 265 °C , -10.0 mA Ftoccle Toggle Frequency Vdd = 5V 15 MHz * Dependent on array complexity and assuming no ... | OCR Scan |
8 pages, |
working of IC 4027 IC 4069 cmos ic CMOS 4024 with truth table NAND 4011 ic cmos logic 4000 series ic 40138 4027 CMOS Flip-Flop 4000 SERIES cmos logic data 4011 nand gate IC IC 4027 pin diagram 4017-DECADE COUNTER MHB 4012 datasheet abstract |
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| Abstract: MOS MOS Integrated Circuit u PD78E9860 PD78E9860, 78E9861 78E9861 8 u PD78E9860 PD78E9860, 78E986178K/0Su PD789860 PD789860, 789861 , 96 4016 ASSP 64 64 PD789467 PD789467 PD789327 PD789327 PD789327A/D PD789327A/D LCD 44 44 20 20 PD789800 PD789800 , X2 CL2 POWER POWER ON ON CLEAR CLEAR LOW VOLTAGE INDICATOR VDD VSS VPP u , 4-1 SFR R/W 1 8 16 FF00H FF00H 0 P0 FF02H FF02H 2 P2 FF04H FF04H 4 P4 FF10H FF10H 10L BSFRL10 BSFRL10 - - R W - - R/W FF11H FF11H 10H ... | Original |
88 pages, |
uPD78E9861MC-5A4 CR308 TM407 TMC4018 uPD789860 uPD789861 uPD78E9860 uPD78E9860MC-5A4 uPD78E9861 78E9861 datasheet abstract |
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| Abstract: Propagati on Delay Time: Clock to Q3 = 50 ns typ Clock to Bus = 35 ns typ MC4316/4016 MC4318/4018 MC4318/4018 MC4317 MC4317 , inverters. By selecting one of four logic combinations, information on one of the four data inputs will be , TIMING DIAGRAM X, Y Select Lines Sense Output S-v f \_ _^r ~ tpd + © © ® (T) All X and Y , Dissipation - 100 mW Typ/pkg LOW LEVEL INVERTER r i Ì Applies only to input gate HIGH LEVEL GATE This , TURN ON DELAY TIMES [nil Ta 25°C, Ct - 25 pF INPUT 00 Q1 Q2 03 Q4 Q5 Q6 Q7 ... | OCR Scan |
44 pages, |
MC4039 MC4015 MC4008 Equivalent MC908Q MC4021 4054 bcd MC4038 MC4053 MC4068 MC4040F diagram of LED matrix using 4017 seven segment driver mc4039 truth table of 4017 S4 84a DIODE schottky MC4300/MC4000 MC4300/MC4000 abstract |
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| Abstract: MOS LSI TMS2516 TMS2516, SMJ2516 SMJ2516 16,384 BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES DECEMBER 1979 - , N-channel silicon-gate technology for high speed and simple interface with MOS and bipolar circuits. All , plug-in compatible with the '4016 16K static RAM. TMS2516 TMS2516 . . . JL PACKAGE SMJ2516 SMJ2516 . J PACKAGE (TOP , insertion in mounting-hole rows on 600-mil (1 5,2 mm) centers whereas the FG package is intended for surface mounting on solder pads on 0.050-irch (1,27 mm) centers. The FG package offers a three layer rectangular ... | OCR Scan |
9 pages, |
TTL COMPATIBLE 4016 TMS2516-45 TMS2516-35 CI 4016 2516 eprom texas TMS2516 JL 2516 eprom TMS2516 SMJ2516 TMS2516 abstract |
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| Abstract: Assignment The Program operation works on page units while the Erase operation works on block units. r , (70h)- A_f a_r Status on -(70h)- â- R CEn + 1 A Device 1 Device 2 Device 3 Device N , TOSHIBA TH58512FTI TH58512FTI TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 512-MBIT 512-MBIT , VIEW) NC c 48 NC c 47 NC c 3 46 NC c 4 45 NC c 5 44 GND c 6 43 R/B c 7 42 RE c 8 41 CEC 9 40 , ALE Address Latch Enable WP Write Protect R/B Ready/Busy GND Ground input VCC Power Supply vss ... | OCR Scan |
33 pages, |
TH58512FTI TH58512FT 512-MBIT TH58512 TH58512FTI abstract |
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| Abstract: to Ready time depends on the pull-up resistor tied to the R/B pin. (Refer to Application Note(7 , page units while the Erase operation works on block units. r 131072 pages J = 4096 blockt V 1 block , t t t Busy ^_r\ i t a_I-v -(70H)- A_T A_f Status on Device 1 -(70H)- â- R Status on , TOSHIBA TH58512FT TH58512FT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 512-MBIT 512-MBIT , ASSIGNMENT (TOP VIEW) NC c 48 NC c 47 NC c 3 46 NC c 4 45 NC c 5 44 GND 1 6 43 R/B c 7 42 RE c 8 41 ... | OCR Scan |
33 pages, |
TH58512FT 512-MBIT TH58512 TH58512FT abstract |
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| Abstract: /74LS /74LS or Twenty Series 54ALS/74ALS 54ALS/74ALS TTL Loads • Complementary Silicon Gate MOS Technology with a Six , random-access memory is organized as 2048 words of 8-bits each. Fabricated using complementary silicon-gate MOS , compatible with the '4016 and the '2516. Few modifications, if any, are needed for other 16K t Low cost J , on a nmv product. Specifications ara subject to changa without notice. Copyright c Texas , (FG). The JD package is designed for insertion in mounting-hole rows on 600-mil (15,2 mm) centers ... | OCR Scan |
9 pages, |
TMS4016 TMS2516 MB8416 HM6116 CD 4016 PIN DIAGRAM tc5517 SMJ5517 2048-WORD SMJ5517 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| Description The CD4016M/CD4016C is a quad bilateral switch which utilizes P-channel and N-channel complementary MOS (CMOS) circuits to provide an extremely high "OFF" resistance and low "ON" resistance switch Matched switch characteristics: [DELTA]R ON =40 Ohm typ. High "ON/OFF" output: 65 dB typ. voltage ratio National P/N CD4016C - Quad Bilateral Switch Please enable Javascript in your browser. [Information as of 11-Sep-98] CD4016C Quad Bilateral Switch Generic P/N 4016C Note: This device may www.datasheetarchive.com/files/national/htm/nsc02288-v4.htm |
National | 16/09/1998 | 6.73 Kb | HTM | nsc02288-v4.htm |
| Description The CD4016M/CD4016C is a quad bilateral switch which utilizes P-channel and N-channel complementary MOS (CMOS) circuits to provide an extremely high "OFF" resistance and low "ON" resistance switch Matched switch characteristics: [DELTA]R ON =40 Ohm typ. High "ON/OFF" output: 65 dB typ. voltage ratio National P/N CD4016M - Quad Bilateral Switch Please enable Javascript in your browser. [Information as of 11-Sep-98] CD4016M Quad Bilateral Switch Generic P/N 4016M Note: This device may www.datasheetarchive.com/files/national/htm/nsc02289-v4.htm |
National | 16/09/1998 | 6.73 Kb | HTM | nsc02289-v4.htm |
| Low "ON" resistance: 300 Ohm typ.: V DD -V SS =15V Matched switch characteristics: [DELTA]R ON =40 Ohm typ. High "ON/OFF" output: 65 dB typ. voltage ratio: @f is =10 kHz: R L =10k High degree of National P/N CD4016M - Quad Bilateral Switch [Information as of 5-Nov-97] CD4016M Quad Bilateral Switch Generic P/N 4016M Contents General Description Features Applications Datasheet General Description The CD4016M/CD4016C is a quad www.datasheetarchive.com/files/national/docs/wcd00013/wcd013f5.htm |
National | 03/04/1998 | 5.39 Kb | HTM | wcd013f5.htm |
| Low "ON" resistance: 300 Ohm typ.: V DD -V SS =15V Matched switch characteristics: [DELTA]R ON =40 Ohm typ. High "ON/OFF" output: 65 dB typ. voltage ratio: @f is =10 kHz: R L =10k High degree of National P/N CD4016C - Quad Bilateral Switch [Information as of 5-Nov-97] CD4016C Quad Bilateral Switch Generic P/N 4016C Contents General Description Features Applications Datasheet General Description The CD4016M/CD4016C is a quad www.datasheetarchive.com/files/national/docs/wcd00013/wcd013f4.htm |
National | 03/04/1998 | 5.39 Kb | HTM | wcd013f4.htm |
| (V SS ) M54/M74HC4016 5/11 CHANNEL RESISTANCE (R ON ) I CC (Opr.) M54/M74HC4016 6/11 Plastic DIP14 DIP14 DIP14 DIP14 BILATERAL SWITCH B1R (Plastic Package) ORDER CODES : M54HC4016F1R M74HC4016M1R M74HC4016B1R M74HC4016C1R F1R = 25 5C . HIGH NOISE IMMUNITY V NIH = V NIL = 28 % V CC (MIN.) . LOW "ON" RESISTANCE R ON = 60 W (TYP /74HC4016 is a high speed CMOS QUAD BILATERAL SWITCH fabricated in silicon gate C 2 MOS technology. It 2.0 0.5 0.5 0.5 V 4.5 1.35 1.35 1.35 9.0 2.5 2.5 2.5 12.0 3.6 3.6 3.6 R ON ON Resistance 4.5 V IN www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1959-v2.htm |
STMicroelectronics | 14/06/1999 | 8.84 Kb | HTM | 1959-v2.htm |
| -O C I/O MAXIMUM CONTROL FREQUENCY GND (V SS ) M54/M74HC4016 5/11 CHANNEL RESISTANCE (R ON BILATERAL SWITCH B1R (Plastic Package) ORDER CODES : M54HC4016F1R M74HC4016M1R M74HC4016B1R M74HC4016C1 .) . LOW "ON" RESISTANCE R ON = 60 W (TYP.) AT V CC = 9 V, I I/O = 100 m A . SINE WAVE DISTORSION .6 3.6 R ON ON Resistance 4.5 V IN = V IHC V I/O = V CC to GND I I/O = 100 m A 160 320 I/O = 100 m A 80 160 200 250 9.0 60 120 150 200 12.0 50 100 125 150 D R ON Difference of ON www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1959.htm |
STMicroelectronics | 20/10/2000 | 11.37 Kb | HTM | 1959.htm |
| (V SS ) M54/M74HC4016 5/11 CHANNEL RESISTANCE (R ON ) I CC (Opr.) M54/M74HC4016 6/11 Plastic DIP14 DIP14 DIP14 DIP14 BILATERAL SWITCH B1R (Plastic Package) ORDER CODES : M54HC4016F1R M74HC4016M1R M74HC4016B1R M74HC4016C1R F1R = 25 5C . HIGH NOISE IMMUNITY V NIH = V NIL = 28 % V CC (MIN.) . LOW "ON" RESISTANCE R ON = 60 W (TYP /74HC4016 is a high speed CMOS QUAD BILATERAL SWITCH fabricated in silicon gate C 2 MOS technology. It 2.0 0.5 0.5 0.5 V 4.5 1.35 1.35 1.35 9.0 2.5 2.5 2.5 12.0 3.6 3.6 3.6 R ON ON Resistance 4.5 V IN www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1959-v1.htm |
STMicroelectronics | 02/04/1999 | 8.88 Kb | HTM | 1959-v1.htm |
| CONTROL FREQUENCY GND (V SS ) M54/M74HC4016 5/11 CHANNEL RESISTANCE (R ON ) I CC (Opr HC4016 M74HC4016 October 1993 QUAD BILATERAL SWITCH B1R (Plastic Package) ORDER CODES : M54HC4016F1R M74HC4016M1R M74HC4016B1R M74HC4016C1R F1R (Ceramic Package) M1R (Micro " RESISTANCE R ON = 60 W (TYP.) AT V CC = 9 V, I I/O = 100 m A . SINE WAVE DISTORSION 0 .35 9.0 2.5 2.5 2.5 12.0 3.6 3.6 3.6 R ON ON Resistance 4.5 V IN = V IHC V I/O = V www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1959-v3.htm |
STMicroelectronics | 25/05/2000 | 10.66 Kb | HTM | 1959-v3.htm |
| | S30XXXH S30XXXH S30XXXH S30XXXH - SCR | Contents | S4014XH S4014XH S4014XH S4014XH - SCR | Contents | S4016XH - SCR | Contents | Contents | ST10F167 ST10F167 ST10F167 ST10F167_DS - 16-BIT 16-BIT 16-BIT 16-BIT MCU WITH 128KBYTE 128KBYTE 128KBYTE 128KBYTE FLASH MEMORY | Contents | ST10R163_DS - ST10R163 16-BIT 16-BIT 16-BIT 16-BIT ROMLESS MICROCONTROLLER | Contents | ST10R165BQ1_DS - 16-BIT 16-BIT 16-BIT 16-BIT ROMLESS MICROCONTROLLER IN PQFP AT 25MHZ 25MHZ 25MHZ 25MHZ | Contents | ST10R165_DS - ST10R165 16-BIT 16-BIT 16-BIT 16-BIT ROMLESS MICROCONTROLLER AND ON SCREEN DISPLAY (OSD) FOR TV FREQUENCY AND VOLTAGE SYNTHESIS | Contents | ST6365 ST6365 ST6365 ST6365 - 8-BIT www.datasheetarchive.com/files/stmicroelectronics/stonline/books/pdf/alpha/ds/s.htm |
STMicroelectronics | 27/03/1998 | 387.92 Kb | HTM | s.htm |
| | S30XXXH S30XXXH S30XXXH S30XXXH - SCR | Contents | S4014XH S4014XH S4014XH S4014XH - SCR | Contents | S4016XH - SCR | Contents | Contents | ST16R820 - SMARTCARD MCU WITH 544 BYTES EEPROM FOR CONTACTLESS/CONTACT APPLICATIONS ROM, EPROM, OTP AND ON SCREEN DISPLAY (OSD) FOR TV FREQUENCY AND VOLTAGE SYNTHESIS | Contents | ST6365 ST6365 ST6365 ST6365 - 8-BIT MICROCONTROLLER (MCU) WITH ROM, EPROM, OTP AND ON SCREEN DISPLAY FOR TV TUNING | Contents | ST6367 ST6367 ST6367 ST6367 - 8-BIT MICROCONTROLLER (MCU) WITH ROM, EPROM, OTP AND ON SCREEN DISPLAY FOR TV TUNING www.datasheetarchive.com/files/stmicroelectronics/stonline/books/pdf/alpha/ds/s-v1.htm |
STMicroelectronics | 07/04/1999 | 373.93 Kb | HTM | s-v1.htm |