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MMZ25332B Datasheet

Part Manufacturer Description PDF Type
MMZ25332BT1 Freescale Semiconductor RF Amplifiers, RF/IF and RFID, IC AMP HBT INGAP 12QFN Original

MMZ25332B

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Document Number: MMZ25332B Rev. 0, 5/2012 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) MMZ25332BT1 High Efficiency/Linearity Amplifier The MMZ25332B is a 2-stage, high linearity InGaP HBT broadband amplifier designed for femtocell , . MMZ25332BT1 1 Table 4. Electrical Characteristics (VCC1 = VCC2 = VBIAS = 5 Vdc, 2500 MHz, TA = 25#23;C, 50 , Connections MMZ25332BT1 2 RF Device Data Freescale Semiconductor, Inc. VCC1 PDET L1 C1 C3 Freescale Semiconductor
Original

RC0402JR-071K20L

Abstract: MMZ25332B Freescale Semiconductor Technical Data Document Number: MMZ25332B Rev. 0, 5/2012 Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ25332B is a , Test Signal W-CDMA LTE 20 MHz MMZ25332BT1 1800-2800 MHz, 26.5 dB 33 dBm InGaP HBT QFN 3×3 , rights reserved. MMZ25332BT1 1 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical , Diagram Figure 2. Pin Connections MMZ25332BT1 2 RF Device Data Freescale Semiconductor, Inc
Freescale Semiconductor
Original
RC0402JR-071K20L GRM155R61A105KE15 04023J1R8BBS YAGEO CAPACITOR
Abstract: Document Number: MMZ25332B Rev. 2, 5/2014 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) MMZ25332BT1 High Efficiency/Linearity Amplifier The MMZ25332B is a 2-stage, high linearity InGaP HBT broadband amplifier designed for femtocell , rights reserved. RF Device Data Freescale Semiconductor, Inc. MMZ25332BT1 1 Table 4 , MMZ25332BT1 2 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 2110â'"2170 MHz Freescale Semiconductor
Original
5/2014S

FR408

Abstract: Freescale Semiconductor, Inc. MMZ25332BT1 Document Number: MMZ25332B RF Device Data Rev. 1, 12/2012 , Freescale Semiconductor Technical Data Document Number: MMZ25332B Rev. 1, 12/2012 Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMZ25332B is a , Test Signal W-CDMA LTE 20 MHz MMZ25332BT1 1800-2800 MHz, 26.5 dB 33 dBm, 5.8 NF InGaP HBT QFN 3 , . Freescale Semiconductor, Inc., 2012. All rights reserved. MMZ25332BT1 1 RF Device Data Freescale
Freescale Semiconductor
Original
FR408

PSC9132

Abstract: JESD207/ADI Amplifiers TX SAW Duplexer MMZ25332B LTE-FDD/ TDD and WCDMA Transceiver sp2t sp3t , MMZ25332B RX SAW MML20211H Freescale LNAs MML09211H GSM sniff sp2t Metrocell Solution: QorIQ
Freescale Semiconductor
Original
PSC9132 JESD207/ADI BSC9130/31 BSC9132

MMZ20363B

Abstract: MRFE6VP6300 MMA25312BT1 MMZ25333BT1ï MMZ25332BT1 MMZ25332B4(2b) MMZ09332B(2b) MMZ09363B(2b) MMZ20363B(2b) (2)To
Freescale Semiconductor
Original
MRFE6VP6300 MMZ25333B NONLINEAR MODEL LDMOS Product Selector Guide