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MMG3012NT1 Datasheet

Part Manufacturer Description PDF Type
MMG3012NT1 Freescale Semiconductor Heterojunction Bipolar Transistor Technology (InGaP HBT) Original
MMG3012NT1 Freescale Semiconductor Heterojunction Bipolar Transistor Technology (InGaP HBT) Original
MMG3012NT1 Freescale Semiconductor Heterojunction Bipolar Transistor Technology (InGaP HBT) Original

MMG3012NT1

Catalog Datasheet MFG & Type PDF Document Tags

1731-41

Abstract: 33 GP Freescale Semiconductor Technical Data Document Number: MMG3012NT1 Rev. 6, 2/2012 Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3012NT1 is a , Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel. MMG3012NT1 0- 6000 MHz, 19 , , 2012. All rights reserved. MMG3012NT1 1 RF Device Data Freescale Semiconductor, Inc. Table 4 , temperature should not exceed 150°C. MMG3012NT1 2 RF Device Data Freescale Semiconductor, Inc. Table 5
Freescale Semiconductor
Original
1731-41 33 GP

ML200C

Abstract: MMG3012NT1 Freescale Semiconductor Technical Data Document Number: MMG3012NT1 Rev. 5, 3/2008 Heterojunction Bipolar Transistor Technology (InGaP HBT) MMG3012NT1 Broadband High Linearity Amplifier The MMG3012NT1 is a General Purpose Amplifier that is internally input matched and internally output , ., 2005-2008. All rights reserved. RF Device Data Freescale Semiconductor MMG3012NT1 1 Table 4 , - V 1. For reliable operation, the junction temperature should not exceed 150°C. MMG3012NT1
Freescale Semiconductor
Original
ML200C 121-296 transistor 162828 A113 A114 A115
Abstract: Freescale Semiconductor Technical Data Document Number: MMG3012NT1 Rev. 3, 3/2007 Heterojunction Bipolar Transistor Technology (InGaP HBT) MMG3012NT1 Broadband High Linearity Amplifier The MMG3012NT1 is a General Purpose Amplifier that is internally input matched and internally output , Device Data Freescale Semiconductor MMG3012NT1 1 Table 4. Electrical Characteristics (VCC = 5 Vdc , reliable operation, the junction temperature should not exceed 150°C. MMG3012NT1 2 RF Device Data Freescale Semiconductor
Original

121-296

Abstract: 1731-41 Freescale Semiconductor Technical Data Document Number: MMG3012NT1 Rev. 1, 8/2005 Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3012NT1 is a , and RoHS Compliant · In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MMG3012NT1 , AN1955. Freescale Semiconductor, Inc., 2005. All rights reserved. MMG3012NT1 1 RF Device Data , 3.8 70 5 Max - - - - - - 82 - Unit dB dB dB dBm dBm dB mA V MMG3012NT1 2 RF Device Data
Freescale Semiconductor
Original
1191-02 141059 02144
Abstract: Freescale Semiconductor Technical Data Document Number: MMG3012NT1 Rev. 7, 4/2012 Heterojunction Bipolar Transistor Technology (InGaP HBT) MMG3012NT1 Broadband High Linearity Amplifier The MMG3012NT1 is a general purpose amplifier that is internally input matched and internally output matched. It , . All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMG3012NT1 1 Table 4 , "C. MMG3012NT1 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Functional Pin Description Pin Freescale Semiconductor
Original

A113

Abstract: A114 Freescale Semiconductor Technical Data Document Number: MMG3012NT1 Rev. 4, 7/2007 Heterojunction Bipolar Transistor Technology (InGaP HBT) MMG3012NT1 Broadband High Linearity Amplifier The MMG3012NT1 is a General Purpose Amplifier that is internally input matched and internally output , Data Freescale Semiconductor MMG3012NT1 1 Table 4. Electrical Characteristics (VCC = 5 Vdc , reliable operation, the junction temperature should not exceed 150°C. MMG3012NT1 2 RF Device Data
Freescale Semiconductor
Original
C0603C102J5RAC C0603C103J5RAC C101 02365 pin diagram of 7818 24236

m 63102 datasheet

Abstract: #144-55-8 Freescale Semiconductor Technical Data Document Number: MMG3012NT1 Rev. 1, 8/2005 Heterojunction Bipolar Transistor Technology (InGaP HBT) MMG3012NT1 Broadband High Linearity Amplifier The MMG3012NT1 is a General Purpose Amplifier that is internally input matched and internally output , Freescale Semiconductor MMG3012NT1 1 Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TC = , junction temperature should not exceed 150°C. MMG3012NT1 2 RF Device Data Freescale Semiconductor
Freescale Semiconductor
Original
m 63102 datasheet 0603A-102 173141 33369 143933
Abstract: Freescale Semiconductor Technical Data Document Number: MMG3012NT1 Rev. 7, 4/2012 Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3012NT1 is a , Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel. MMG3012NT1 0- 6000 MHz, 19 , , 2012. All rights reserved. MMG3012NT1 1 RF Device Data Freescale Semiconductor, Inc. Table 4 , temperature should not exceed 150°C. MMG3012NT1 2 RF Device Data Freescale Semiconductor, Inc. Table 5 Freescale Semiconductor
Original
Abstract: Freescale Semiconductor Technical Data Document Number: MMG3012NT1 Rev. 0, 5/2005 Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3012NT1 is a , Pb - Free Leads · In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MMG3012NT1 0 , . MMG3012NT1 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (VCC = 5 Vdc , 150°C. MMG3012NT1 2 RF Device Data Freescale Semiconductor Table 5. Functional Pin Description Freescale Semiconductor
Original

1191-02

Abstract: Freescale Semiconductor Technical Data Document Number: MMG3012NT1 Rev. 2, 5/2006 Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3012NT1 is a , RoHS Compliant · In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MMG3012NT1 0 - , - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. MMG3012NT1 6-1 , °C. MMG3012NT1 6-2 Freescale Semiconductor RF Product Device Data Table 5. Functional Pin Description Pin
Freescale Semiconductor
Original

TV booster diagram

Abstract: mhw* 820-1 DATASHEET MHW8222BN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 - 27 MMG3012NT1 . . . . , ) MMG3001NT1 (18f) MMG3009NT1(18f) MMG3012NT1(18f) MMG3013NT1(18f) MMG3H21N(46a) MMG3015N(46a) MMG3002NT1 , . . . . . . . . . . . 2 - 136 MMG3012NT1 . . . . . . . . . . . . . . . . . . . . . . . . . . .
Freescale Semiconductor
Original
DL210 TV booster diagram mhw* 820-1 DATASHEET pcb assembly 85501 application circuits of ic 74121 MHW6342TN

MRF8P9040N

Abstract: rf Amplifier mhz Doherty 470-860 Amplifiers MMG3007NT1, MMG3008NT1, MMG3009NT1, MMG3010NT1, MMG3011NT1, MMG3012NT1, MMG3013NT1 SG1009
Freescale Semiconductor
Original
MRF8P9040N rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3

MMM6029

Abstract: NONLINEAR MODEL LDMOS , MMG3009NT1, MMG3010NT1, MMG3011NT1, MMG3012NT1, MMG3013NT1 WLAN MMG2401NR2 SG1009-2 SG1009Q32005
Freescale Semiconductor
Original
MMM6025 MMM6035 MRF6P3300HR3 MRF6P3300HR5 MRF6S9045NR1 MRF6S9045NBR1 MMM6029 NONLINEAR MODEL LDMOS MMM6007 baseband DigRF MRF5S9080NB MW6S010 SG1009Q42005 MC13820

stripline directional couplers

Abstract: MRFP36030 Purpose Amplifiers â'" InGaP HBT, GaAs HFET, GaAs E-pHEMT Product MMG3012NT1 MMG3015NT1 MMG3H21NT1
Freescale Semiconductor
Original
MRF377HR5 MRF6S9125NR1 stripline directional couplers MRFP36030 MRF1511NT1 ESD Product Selector Guide mrf6s19100nb MRF377HR3 MRF6S9060NR1 MRF6S9060NBR1 MRF6S9125NBR1

power transistors table

Abstract: MHW6342TN ) MMG3007NT1(46a) MMG3008NT1(46a) MMG3009NT1(46a) MMG3010NT1(46a) MMG3011NT1(46a) MMG3012NT1(46a
Freescale Semiconductor
Original
power transistors table mrfe6s9060n MW6S010NR1 Motorola Microwave power Transistor MRF7S18125