NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
MMDT4403 J-STD-020A MIL-STD-202 AP02001 DS30110 MMDT4403-7 MMDT4403-7-F - Datasheet Archive
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMDT4403 Features · · · · Epitaxial
MMDT4403 MMDT4403 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMDT4403 MMDT4403 Features · · · · Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package Also Available in Lead Free Version A C2 B1 Dim · · · · · Maximum Ratings 0.30 B Case: SOT-363, Molded Plastic Case Material - UL Flammability Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A J-STD-020A Terminals: Solderable per MIL-STD-202 MIL-STD-202, Method 208 Also Available in Lead Free Plating (Matte Tin Finish). Please see Ordering Information, Note 5, on Page 2 Terminal Connections: See Diagram Marking (See Page 2): K2T Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approx.) Max 0.10 1.15 1.35 C 2.00 2.20 D 0.65 Nominal C1 B2 Mechanical Data Min A B C E2 · · · · SOT-363 E1 G H F C2 B1 F E1 0.10 0.90 1.00 0.25 0.40 M L ¾ 0.10 0.25 a D 0.40 2.20 L J 0.30 1.80 K M H J K 0° 8° All Dimensions in mm E2 B2 C1 @ TA = 25°C unless otherwise specified Symbol MMDT4403 MMDT4403 Unit Collector-Base Voltage Characteristic VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5.0 V IC -600 mA Collector Current - Continuous (Note 1) Power Dissipation (Note 1, 2) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: Pd 200 mW RqJA 625 °C/W Tj, TSTG -55 to +150 °C 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001 AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Maximum combined dissipation. DS30110 DS30110 Rev. 5 - 2 1 of 4 www.diodes.com MMDT4403 MMDT4403 ã Diodes Incorporated Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -40 ¾ V IC = -100mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -40 ¾ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾ V IE = -100mA, IC = 0 ICEX ¾ -100 nA VCE = -35V, VEB(OFF) = -0.4V IBL ¾ -100 nA VCE = -35V, VEB(OFF) = -0.4V hFE 30 60 100 100 20 ¾ ¾ ¾ 300 ¾ Collector-Emitter Saturation Voltage VCE(SAT) ¾ -0.40 -0.75 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Base-Emitter Saturation Voltage VBE(SAT) -0.75 ¾ -0.95 -1.30 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Output Capacitance Ccb ¾ 8.5 pF VCB = -10V, f = 1.0MHz, IE = 0 Input Capacitance Ceb ¾ 30 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.5 15 kW Voltage Feedback Ratio hre 0.1 8.0 x 10-4 Small Signal Current Gain hfe 60 500 ¾ Output Admittance hoe 1.0 100 mS fT 200 ¾ MHz Delay Time td ¾ 15 ns Rise Time tr ¾ 20 ns Storage Time ts ¾ 225 ns Fall Time tf ¾ 30 ns OFF CHARACTERISTICS (Note 3) Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3) DC Current Gain IC = -100µA, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = ¾ -1.0V -1.0V -1.0V -2.0V -2.0V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -20mA, f = 100MHz SWITCHING CHARACTERISTICS VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA Ordering Information (Note 4) Device Notes: Packaging Shipping MMDT4403-7 MMDT4403-7 SOT-363 3000/Tape & Reel 3. Short duration test pulse used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. For Lead Free version (with Lead Free terminal finish) part number, please add "-F" suffix to part number above. Example: MMDT4403-7-F MMDT4403-7-F. Marking Information K2T= Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September YM K2T K2T YM Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30110 DS30110 Rev. 5 - 2 2 of 4 www.diodes.com MMDT4403 MMDT4403 0.5 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) PD, POWER DISSIPATION (mW) 250 200 150 100 50 IC IB = 10 0.4 TA = 150°C 0.2 0.1 TA = 50°C 0 0 0 25 50 75 100 125 150 175 200 1 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Collector Emitter Saturation Voltage vs. Collector Current TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 1000 1000 VCE = 5V 0.9 0.8 TA = -50°C 0.7 TA = 25°C 0.6 0.5 TA = 150°C 0.4 0.3 0.2 0.1 10 1 100 hFE, DC CURRENT GAIN (NORMALIZED) VBE(ON), BASE EMITTER VOLTAGE (V) TA = 25°C 0.3 VCE = 5V TA = 150°C TA = 25°C 100 TA = -50°C 10 1 IC, COLLECTOR CURRENT (mA) Fig. 3 Base-Emitter Voltage vs. Collector Current 1 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 4 DC Current Gain vs. Collector Current VCE = 5V 30 20 Cibo 100 CAPACITANCE (pF) fT, GAIN BANDWIDTH PRODUCT (MHz) 1000 10 10 5.0 Cobo 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Gain Bandwidth Product vs. Collector Current DS30110 DS30110 Rev. 5 - 2 3 of 4 www.diodes.com 1.0 -0.1 -1.0 -30 -10 REVERSE VOLTS (V) Fig. 6 Typical Capacitance MMDT4403 MMDT4403 VCE, COLLECTOR-EMITTER VOLTAGE (V) 1.6 1.4 1.2 IC = 10mA IC = 1mA IC = 100mA IC = 300mA IC = 30mA 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100 IB, BASE CURRENT (mA) Fig. 7 Typical Collector Saturation Region DS30110 DS30110 Rev. 5 - 2 4 of 4 www.diodes.com MMDT4403 MMDT4403