MMBTSC3356 - Datasheet Archive

 

NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band The transistor is subdivided

 

MMBTSC3356 MMBTSC3356 NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 20 V Collector Emitter Voltage VCEO 12 V Emitter Base Voltage VEBO 3 V Collector Current IC 100 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 65 to + 150 O C C Characteristics (Ta = 25 OC) Symbol Min. Typ. Max. Unit hFE hFE hFE 50 80 125 - 100 160 250 - Collector Cutoff Current at VCB = 10 V ICBO - - 1 µA Emitter Cutoff Current at VEB = 1 V IEBO - - 1 µA Gain Bandwidth Product at VCE = 10 V, IC = 20 mA fT - 7 - GHz Feed-Back Capacitance at VCB = 10 V, f = 1 MHz Cre - 0.55 1 pF Noise Figure at VCE = 10 V, IC = 7 mA, f = 1 GHz NF - 1.1 2 dB Parameter DC Current Gain at VCE = 10 V, IC = 20 mA 1) Current Gain Group Q R S 1) The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 04/10/2006 MMBTSC3356 MMBTSC3356 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 04/10/2006