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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: MMBT3906 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice , built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. MMBT3906 , MMBT3906 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF , Temperature (Note 1) 0 MMBT3906 Document number: DS30059 DS30059 Rev. 14 - 2 2 of 4 www.diodes.com 1 0.1 , (DRDP02W DRDP02W) 1,000 September 2008 © Diodes Incorporated MMBT3906 10 10 VBE(SAT ... | Original |
4 pages, |
DS30059 npn k3n MMBT3906 spice MMBT3906 MMBT3904 J-STD-020D k3n transistor marking code k1 sot transistor k3n K3N Code sot-23 on semiconductor marking code k3n MMBT3906 abstract |
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| Abstract: MMBT3906 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice , MMBT3906 Document number: DS30059 DS30059 Rev. 14 - 2 1 of 4 www.diodes.com December 2008 © Diodes Incorporated MMBT3906 Electrical Characteristics @TA = 25°C unless otherwise specified , (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 1) 0 MMBT3906 Document number , MMBT3906 10 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 1,000 100 ... | Original |
4 pages, |
MMBT3906 MMBT3904 marking code k3n K3N Code sot-23 on semiconductor J-STD-020D DS30059 marking code k1 sot transistor k3n MMBT3906 abstract |
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| Abstract: MMBT3906 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMBT3906 Features · · · · , Symbol MMBT3906 Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage , ://www.diodes.com/datasheets/ap02001.pdf. DS30059 DS30059 Rev. 8 - 2 1 of 3 www.diodes.com MMBT3906 ã Diodes , -1.0mA Ordering Information (Note 3) Device Notes: Packaging Shipping MMBT3906 -7 , Example: MMBT3906-7-F. YM Marking Information K3N = Product Type Marking Code YM = Date Code ... | Original |
3 pages, |
DS30059 J-STD-020A k3n u transistor MMBT3904 MMBT3906 K3n td K3N sot23 sot23 k3n MMBT3906-7-F MMBT3906 spice sot transistor k3n k3n transistor npn k3n MMBT3906 abstract |
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| Abstract: 2N3906 2N3906 MMBT3906 C E C B TO-92 SOT-23 E PZT3906 PZT3906 MMPQ3906 MMPQ3906 E B Mark , / MMBT3906 / MMPQ3906 MMPQ3906 / PZT3906 PZT3906 N Discrete POWER & Signal Technologies (continued) Electrical , *Pulse Test: Pulse Width 300 us, Duty Cycle 2.0% Spice Model PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 , Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4 Xtf=6 Rb=10) 2N3906 2N3906 / MMBT3906 / MMPQ3906 MMPQ3906 , , Junction to Ambient Symbol PD 125 Characteristic mW mW/°C °C/W °C/W Max *MMBT3906 350 ... | Original |
5 pages, |
SOIC-16 PZT3906 2N3906 die 2n3906 equivalent MMPQ3906 728p MMBT3906 spice pr66 2N3906 MMBT3906 2n3906 sot23 model of 2n3906 2N3906 abstract |
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| Abstract: 2N3906 2N3906 MMBT3906 C E C TO-92 BE Mark: 2A PZT3906 PZT3906 MMPQ3906 MMPQ3906 E B SOT-23 , 2N3906 2N3906 / MMBT3906 / MMPQ3906 MMPQ3906 / PZT3906 PZT3906 Discrete POWER & Signal Technologies (continued , I B1 = IB2 = 1.0 mA 75 ns *Pulse Test: Pulse Width 300 us, Duty Cycle 2.0% Spice Model , Xtf=6 Rb=10) 2N3906 2N3906 / MMBT3906 / MMPQ3906 MMPQ3906 / PZT3906 PZT3906 PNP General Purpose Amplifier (continued , Max *MMBT3906 350 2.8 357 Total Device Dissipation Derate above 25°C Thermal Resistance ... | Original |
5 pages, |
TR MJE 350 SOIC-16 PZT3906 MMPQ3906 MMBT3906 728p 2N3906 MMBT3906 spice 2N3906 abstract |
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| Abstract: MMBT3906 PZT3906 PZT3906 C C E E C B C TO-92 E SOT-23 B B SOT-223 , 5.0 83.3 *MMBT3906 350 2.8 *PZT3906 PZT3906 1,000 8.0 200 357 125 mW mW/°C °C/W °C , 2N3906/MMBT3906/PZT3906, Rev A1 2N3906 2N3906 / MMBT3906 / PZT3906 PZT3906 2N3906 2N3906 (continued) Electrical , ns *Pulse Test: Pulse Width 300 us, Duty Cycle 2.0% Spice Model PNP (Is=1.41f Xti=3 Eg=1.11 , / MMBT3906 / PZT3906 PZT3906 PNP General Purpose Amplifier (continued) 250 V CE = 1 .0V 125 °C 200 ... | Original |
6 pages, |
PZT3906 MMBT3906 2N3906 728p 2N3906 abstract |
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| Abstract: MMBT3906 PZT3906 PZT3906 C C E E C B C TO-92 E SOT-23 B B SOT-223 , Thermal Resistance, Junction to Ambient Max Units 2N3906 2N3906 625 5.0 83.3 *MMBT3906 350 2.8 , min. 6 cm2. 2001 Fairchild Semiconductor Corporation 2N3906/MMBT3906/PZT3906, Rev A 2N3906 2N3906 / MMBT3906 / PZT3906 PZT3906 2N3906 2N3906 (continued) Electrical Characteristics Symbol TA = 25°C unless , currents (A) are negative polarity for PNP transistors. Spice Model PNP (Is=1.41f Xti=3 Eg=1.11 ... | Original |
6 pages, |
PZT3906 MMBT3906 728p 2N3906 2n3906 equivalent transistor 2N3906 abstract |
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| Abstract: 2N3906 2N3906 / MMBT3906 / PZT3906 PZT3906 2N3906 2N3906 MMBT3906 C E C B TO-92 B SOT-23 E , *Pulse Test: Pulse Width 300 us, Duty Cycle 2.0% Spice Model PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 , Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4 Xtf=6 Rb=10) 2N3906 2N3906 / MMBT3906 / PZT3906 PZT3906 , , Junction to Ambient PD 125 Characteristic mW mW/°C °C/W °C/W Max *MMBT3906 350 2.8 , / MMBT3906 / PZT3906 PZT3906 PNP General Purpose Amplifier (continued) Typical Characteristics ... | Original |
6 pages, |
PZT3906 MMPQ3906 MMBT3906 728p 2N3906 2N3906 die 2N3906 abstract |
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| Abstract: FAIRCHILD SEMICONDUCTOR TM 2N3906 2N3906 C TO-92 B ? PZT3906 PZT3906 SOT-223 MMBT3906 SOT-23 B Mark: 2A PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 nA to 100 mA. Sourced from Process 66. Absolute Maximum Ratings* TA = , *Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0% Spice Model PNP (ls=1.411 Xti=3 Eg=1.11 , Ambient 200 125 °C/W Symbol Characteristic Max Units *MMBT3906 MMPQ3906 MMPQ3906 Pd Total Device ... | OCR Scan |
5 pages, |
PZT3906 MMPQ3906 MMBT3906 728p 2N3906 die 2N3906 200H MMBT3906 spice 2N3906 abstract |
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| Abstract: \N Discrete POWER & Signal Technologies IO CO to O O) 2N3906 2N3906 TO-92 MMPQ3906 MMPQ3906 MMBT3906 SOT-23 B Mark: 2A PZT3906 PZT3906 CD -i CO CO o O) -o o CO CO o O) -o N -i CO CO o O) SOIC-16 SOIC-16 SOT-223 PNP General Purpose Amplifier This device is designed for general purpose amplifier and , lB2 = 1.0 mA 75 ns *Pulse Test: Pulse Widths 300 |is, Duty Cycles 2.0% Spice Model PNP , Units *MMBT3906 MMPQ3906 MMPQ3906 Pd Total Device Dissipation 350 1,000 mW Derate above 25 °C 2.8 8.0 mW ... | OCR Scan |
5 pages, |
LS141 SOIC-16 PZT3906 MMPQ3906 MMBT3906 2N3906 728p 2N3906 abstract |
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| Support Spice model of MMBT3906 Power semiconductor products 2001 (01-jan-01) Letter Symbols MMBT3906_1 Product information page MMBT3906; PNP switching transistor General info PNP switching transistor in a SOT23 plastic package. NPN MMBT3906 PNP switching transistor 11-apr-00 Product Specification 8 54 ) Marking/Packing Specific Package Device Status MMBT3906 MMBT3906 T www.datasheetarchive.com/files/philips/pip/mmbt3906_1.html |
Philips | 23/04/2003 | 3.05 Kb | HTML | mmbt3906_1.html |
| MMBT3906_1 MMBT3906 PNP switching transistor MMBT3906 250 40 100 300 300 300 100 40 100 MMBT3904 MMBT3904 MMBT3904 MMBT3904 Package Device Status MMBT3906 MMBT3906 9338 643 70215 Standard MMBT3906 Letter Symbols - Transistors General (01-May-99 www.datasheetarchive.com/files/philips/pip/mmbt3906_1-v1.html |
Philips | 14/02/2002 | 8.12 Kb | HTML | mmbt3906_1-v1.html |
| MMBT3906_2 Product information page MMBT3906; PNP switching transistor MMBT3906 PNP switching transistor 18-3-2003 Product Specification 8.0 72 MMBT3906 MMBT3906 T/R 9338 643 70215 week 34, 2003 Standard Marking Reel MMBT3906 Switching transistors portfolio (2005-02-01) Letter Symbols - Transistors General (1999 www.datasheetarchive.com/files/philips/pip/mmbt3906_2.html |
Philips | 15/06/2005 | 4.21 Kb | HTML | mmbt3906_2.html |
| * PNP; Si; 40.0V 0.200A 257MHz Didoes Inc. BJTs .MODEL DI_MMBT3906T PNP (IS=7.21e-016 NF=1.00 BF=410 VAF=114 + IKF=60.7m ISE=1.13p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=1.21 RB=4.83 RC=0.483 + XTB=1.5 CJE=10.9p VJE=1.10 MJE=0.500 CJC=6.63p VJC=0.300 MJC=0.300 + TF=571p TR=84.1n EG=1.12 ) www.datasheetarchive.com/files/diodes-inc/spice-model/7188.mod |
Diodes, Inc. | 04/09/2012 | 0.33 Kb | MOD | 7188.mod |
| * PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. Transistor .MODEL DI_MMBT3906 PNP (IS=20.3f NF=1.00 BF=192 VAF=114 + IKF=60.7m ISE=12.9p NE=2.00 BR=4.00 NR=1.00 + VAR=20.0 IKR=0.150 RE=1.16 RB=4.63 RC=0.463 + XTB=1.5 CJE=7.60p VJE=1.10 MJE=0.500 CJC=6.52p VJC=0.300 + MJC=0.300 TF=589p TR=98.4n EG=1.12 ) www.datasheetarchive.com/files/diodes-inc/spice-model/7186.mod |
Diodes, Inc. | 04/09/2012 | 0.33 Kb | MOD | 7186.mod |
| NPN switching transistor in a SOT23 plastic package. PNP complement: MMBT3906 hFE max MMBT3904 MMBT3904 MMBT3904 MMBT3904 MMBT3906 300 40 300 300 240 250 40 100 100 250 240 MMBT3906 100 240 100 Single switching transistors 300 MMBT3906 Single switching transistors 100 40 300 250 23 RFS Spice model of MMBT3904 MMBT3904 MMBT3904 MMBT3904 Letter Symbols www.datasheetarchive.com/files/philips/pip/mmbt3904_1.html |
Philips | 14/02/2002 | 8.12 Kb | HTML | mmbt3904_1.html |
| *DIODES_INC_SPICE_MODEL MMBT3906LP *SIMULATOR=SIMETRIX *ORIGIN=DZSL_DPG_SU *DATE=31Aug2012 *VERSION=1.1 .MODEL MMBT3906LP PNP (IS=6E-15 6E-15 6E-15 6E-15 BF=150 NE=1.45 NF=1 ISE=2E-15 2E-15 2E-15 2E-15 ISC=2E-15 2E-15 2E-15 2E-15 NR=1 BR=5 NC=1.025 CJC=6.49E-12 49E-12 49E-12 49E-12 MJC=0.32 VJC=0.5 CJE=8.819E-12 819E-12 819E-12 819E-12 MJE=0.35 VJE=0.7 RE=.8 RC=.6 IKF=170m NK=.70 VAF=12 XTB=1.5 QUASIMOD=1 RCO=1 EG=1.15) * (c) 2012 Diodes Inc * * The copyright in these models and the designs embodied belong * to Diodes Incorporated (" Zetex "). They are supplied www.datasheetarchive.com/files/diodes-inc/spice-model/7187.mod |
Diodes, Inc. | 04/09/2012 | 1.04 Kb | MOD | 7187.mod |
| * * Model Generated by MODPEX * *Copyright(c) Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE * * Contains Proprietary Information * * Which is The Property of * * SYMMETRY OR ITS LICENSORS * *Commercial Use or Resale Restricted * * by Symmetry License Agreement * * * Model generated on Apr 14, 00 * MODEL FORMAT: SPICE3 .MODEL mmbt3906tt1 pnp +IS=7.75521e-12 BF=194 www.datasheetarchive.com/files/on_semiconductor/simulation-models/mmbt3906tt1.sp3 |
On Semiconductor | 30/03/2009 | 0.95 Kb | SP3 | mmbt3906tt1.sp3 |
| * * * * MMBT3906 * * NXP Semiconductors * * Switching PNP transistor * IC = 200 mA * VCEO = 40 V * hFE = 100 - 300 @ 1V/10mA * * * * Package: SOT 23 * * Package Pin 1: Base * Package Pin 2: Emitter * Package Pin 3: Collector * * * * Simulator: Spice 2 * * *# .MODEL QMMBT3906 QMMBT3906 QMMBT3906 QMMBT3906 PNP + IS=9.273E-15 273E-15 273E-15 273E-15 + NF=1.012 + ISE=1.01E-13 01E-13 01E-13 01E-13 + NE=1.6 + BF=153 www.datasheetarchive.com/download/37271369-596967ZC/47196.zip (MMBT3906.prm) |
NXP | 23/10/2012 | 299.09 Kb | ZIP | 47196.zip |
| MMBT3904 MMBT3904 MMBT3904 MMBT3904_3 Product information page MMBT3904 MMBT3904 MMBT3904 MMBT3904; NPN switching transistor General info NPN switching transistor in a SOT23 plastic package. PNP complement: MMBT3906. Features Collector current capability I C = 200 mA Collector-emitter voltage V CEO = 40 V. Applications General switching and amplification SOT23 RFS Support Spice model of MMBT3904 MMBT3904 MMBT3904 MMBT3904 Power semiconductor products 2001 (01 www.datasheetarchive.com/files/philips/pip/mmbt3904_3.html |
Philips | 23/04/2003 | 3.07 Kb | HTML | mmbt3904_3.html |