MMBD6050-V 2002/95/EC 2002/96/EC MMBD6050-V-GS18 MMBD6050-V-GS08 88/540/EEC

Vishay Semiconductors Small Signal Switching Diode Features · Silicon Epitaxial Planar Diode · Fast switching diode

MMBD6050-V MMBD6050-V Vishay Semiconductors Small Signal Switching Diode Features · Silicon Epitaxial Planar Diode · Fast switching diode in case SOT-23, e3 especially suited for automatic insertion. · Lead (Pb)-free component · Component in accordance to RoHS 2002/95/EC 2002/95/EC and WEEE 2002/96/EC 2002/96/EC 3 1 2 16923 Mechanical Data Case: SOT-23 Plastic case Weight: approx. 8.8 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part MMBD6050-V MMBD6050-V Ordering code Marking MMBD6050-V-GS18 MMBD6050-V-GS18 or MMBD6050-V-GS08 MMBD6050-V-GS08 Remarks 5AM Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Forward current Value Unit 70 V mA IF TA = 25 °C 200 IFSM Peak forward surge current Maximum power dissipation Symbol VR Continuous reverse voltage 500 mA Ptot 225 mW on FR-5 board 1) Derate above 25 °C Ptot 1.8 mW/°C TA = 25 °C Ptot 300 mW Derate above 25 °C Maximum power dissipation Ptot 2.4 mW/°C on Alumina substrate 2) 1) FR-5 = 1.0 x 0.75 x 0.062 in. 2) Alumina = 0.4 x 0.3 x 0.024 in. 99.5 % alumina Document Number 85735 Rev. 1.3, 07-Apr-05 www.vishay.com 1 MMBD6050-V MMBD6050-V Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Symbol Value Unit Thermal resistance FR-5 Parameter Test condition RthJA 556 °C;/W Junction to ambient Alumina RthJA 417 °C/W Maximum junction temperature Tj 150 °C Storage temperature range TS - 55 to + 150 °C Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Min V(BR)R 70 IF = 1 mA VF 0.55 0.7 V IF = 100 mA VF 0.85 1.1 V µA Reverse breakdown voltage IR = 100 µA Forward voltage Typ. Max Unit V Reverse leakage current VR = 50 V IR 0.1 Reverse recovery time IF = IR = 10 mA, Irr = 1 mA trr 4 ns Diode capacitance VR = 0 Ctot 2.5 pF 100 10 1 1 18861 10 IF - Forward Current ( mA ) 100 Figure 1. Dynamic Forward Resistance vs. Forward Current www.vishay.com 2 Ptot - Admissible Power Dissipation ( mW ) rf - Dynamic Forward Resistance ( ) Typical Characteristics (Tamb = 25 °C unless otherwise specified) 18889 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 180 200 Tamb - Ambient Temperature ( °C ) Figure 2. Admissible Power Dissipation vs. Ambient Temperature Document Number 85735 Rev. 1.3, 07-Apr-05 MMBD6050-V MMBD6050-V 10000 10000 T j = 25 ° C f = 1 kHz I R - Leakage Current ( nA ) rf - Dynamic Forward Resistance ( ) Vishay Semiconductors 1000 100 10 1 0.01 18662 0.1 1 10 IF - Forward Current ( mA ) 100 10 VR = 20 V 1 100 18665 0 20 40 60 80 100 120 140 160 180 200 Tj - Junction Temperature ( ° C ) Figure 5. Leakage Current vs. Junction Temperature Figure 3. Dynamic Forward Resistance vs. Forward Current Ctot - Relative Capacitance ( pF ) 1000 T j = 25 ° C f = 1 MHz 1.1 1.0 0.9 0.8 0.7 0 2 4 6 8 10 VR - Reverse Voltage ( V ) 18664 Figure 4. Relative Capacitance vs. Reverse Voltage 100 Peak Forward Current ( A ) I FRM - Admissible Repetitive I 18666 10 = 0 = t p /T tp T = 1/f p I FRM t T 0.1 0.2 1 0.5 0.1 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 tp - Pulse Length ( s ) Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration Document Number 85735 Rev. 1.3, 07-Apr-05 www.vishay.com 3 MMBD6050-V MMBD6050-V Vishay Semiconductors 0.175 (.007) 0.098 (.005) 0.1 (.004) max. 0.4 (.016) 0.95 (.037) 1.15 (.045) Package Dimensions in mm (Inches) 2.6 (.102) 2.35 (.092) 0.4 (.016) ISO Method E 3.1 (.122) Mounting Pad Layout 2.8 (.110) 0.52 (0.020) 0.4 (.016) 3 1 0.95 (.037) 1.20(.047) 1.43 (.056) 0.9 (0.035) 2.0 (0.079) 2 0.95 (.037) 0.95 (0.037) 0.95 (0.037) 17418 www.vishay.com 4 Document Number 85735 Rev. 1.3, 07-Apr-05 MMBD6050-V MMBD6050-V Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC 88/540/EEC and 91/690/EEC 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 D-74025 Heilbronn, Germany Document Number 85735 Rev. 1.3, 07-Apr-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1