MMBD4148 1N4148 MBG451 MBG464 MBG704 MGD290 MGD004

SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * * * TECHNICAL DATA SURFACE MOUNT SWITCHING DIODE

MMBD4148 MMBD4148 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * * * TECHNICAL DATA SURFACE MOUNT SWITCHING DIODE Package:SOT-23 Fast Switching Speed Electrically Identical to Standard JEDEC 1N4148 1N4148 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Reverse Voltage VRRM working Peak Reverse Voltage VRWM 75 V DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 53 V Forward Continuous Current(Note) IFM 300 mA Power PD 350 mW 2.8 mW/ Dissipation(Note) Derate Above 25 Junction Temperature Tj 150 Storage Temperature Tstg -55-150 ELECTRICAL CHARACTERISTICS at Ta=25 Characteristic 1.0 V IF=10mA uA VR=75V 50 uA VR=70V Tj=150 uA VR=20V Tj=150 25 IRM Unit 30 Maximum Peak Reverse Current VFM Min Max 5.0 Maximum Forward Voltage Symbol Test Conditions nA VR=20V Capacitance Cj 4.0 PF VR=0 f=1.0MHz Reverse Recovery Time Trr 4.0 nS IF=10mA to IRR=1.0mA VR=6.0V RL=100 Note:Diode On Ceramic Substrate 10mm8.0mm0.7mm DEVICE MARKING: MMBD4148 MMBD4148=A6 4148 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA SURFACE MOUNT SWITCHING DIODE GRAPHICAL DATA MBG451 MBG451 300 MBG464 MBG464 600 handbook, halfpage handbook, halfpage IF (mA) IF (mA) 200 400 (1) 100 (3) 200 0 0 0 100 Tamb (oC) 200 0 1 2 VF (V) (1) Tj = 175 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board; lead length 10 mm. Fig.2 (2) Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG704 MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10-1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 104 4148 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA MGD290 MGD290 103 handbook, halfpage MGD004 MGD004 1.2 handbook, halfpage IR (µA) 10 SURFACE MOUNT SWITCHING DIODE Cd (pF) 2 1.0 (1) (2) 10 0.8 1 0.6 10-1 10-2 0 100 Tj (oC) 200 (1) VR = 75 V; typical values. (2) VR = 20 V; typical values. Fig.5 Reverse current as a function of junction temperature. 0.4 0 10 VR (V) 20 f = 1 MHz; Tj = 25 °C. Fig.6 Diode capacitance as a function of reverse voltage; typical values.