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MM8006 Datasheet

Part Manufacturer Description PDF Type
MM8006 Advanced Semiconductor Original
MM8006 Motorola Semiconductor Data Library Volume 3 1974 Scan
MM8006 N/A Basic Transistor and Cross Reference Specification Scan
MM8006 N/A Shortform Transistor PDF Datasheet Scan
MM8006 N/A Semiconductor Master Cross Reference Guide Scan
MM8006 N/A Shortform Transistor Datasheet Guide Scan
MM8006 Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan

MM8006

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: MM8006 Silicon Transistors - NPN/PNP Small Signal Transistors Page 1 of 1 Silicon Transistors - NPN/PNP Small Signal Transistors Contact Factory for complete specification. STI Type MM8006 Tj 200 hFE max hfe Industry Type MM8006 Notes VCBO 15 hFE A 1.0 fT 1000 Polarity NPN VCEO 10 VCE Case Style TO-206AF/TO-72 Power Dissipation .60 hFE min 25 VCE A Visa & Mastercard Accepted! STI's Terms and Conditions 07-Sep-2010 Semiconductor Technology Semiconductor Technology
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small signal transistors To206AF
Abstract: MM8006 (siliconi MM8007 NPN SILICON RF SMALL-SIGNAL TRANSISTORS . . . designed primarily for , Noise Figure â'" NF = 2.2dB (Typ) @ f = 200 MHz - MM8006 High Power Gain - Gpe = 25 dB (Typ) @ f = 200 MHz - MM8006 High Current-Gainâ'"Bandwidth Product â'" fx = 1000 MHz (Min) @ iq » 5.0 mAdc NPN , = 200 MHz) MM8006 MM8007 - 2.2 2.7 - tHe - 1-0 mAdc. VCE = 6.0 Vdc, f-450 MHz) MM8006 MM8007 - - , Vdc, f - 60 MHz) Both Types - 30 - (lc - 1-0 mAdc, Vçg =6.0 Vdc, f = 200 MHz) MM8006 - 25 - -
OCR Scan
M8006 M8007 MM800 K660 TA-25
Abstract: MM8006 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: PACKAGE STYLE TO-72 The ASI MM8006 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 50 mA VCBO 15 V PDISS 600 mW @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C CHARACTERISTICS 2 = BASE 3 = COLLECTOR 4 = CASE NONE TC = 25 °C SYMBOL BVCEO 1 = EMITTER TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS V IC = 3.0 mA Advanced Semiconductor
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NPN silicon high frequency transistor
Abstract: MM8006 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V(BR)CEO (V)10 V(BR)CBO (V)15 I(C) Max. (A)20m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175Ãu I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) h(FE) Max. Current gain. @I(C) (A) (Test Condition)1.0m @V(CE) (V) (Test Condition)6.0 f(T) Min. (Hz) Transition Freq1.0G @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) Power Gain Min. (dB) @I(C) (A) (Test American Microsemiconductor
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Abstract: MOTOROLA SC - CDIODES/OPTOJ Ím DE Jfci3fci7555 0030055 S 6 3 6 7 2 5 5 MOTOROLA SC ( D IO D E S /O PT O ) SILICON RF TRANSISTOR DICE (continued) 34C 3 8 0 5 5 0 T -df-X s DIE NO. - NPN LINE SOURCE - RF502.191 This die provides performance equal to or better than that of the following device types: 2N5031 2N5032 2N5S35 MM8006 MM8007 2C5031 Designed for use in high-gain, lownoise, small-signal amplifiers. 6 · tT = 1000 MHz (min) @ lc = 5.0 mAdc · N F -
OCR Scan
SILICON SMALL-SIGNAL DICE SILICON SMALL-SIGNAL transistor DICE
Abstract: PN5134 2N5134 2N988 2N989 2SC930 2SC930 KT379V 2N3647 ST6130 MMT72 2N5187 MMBR5031 MM8006 MM8007 2N4251 Advanced Semiconductor
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MRF9331 2SC3029 MMT3960A K918 340t 2SC330 2N2318 2N2320 2N3953 MMT3960 BFT24 2N5186
Abstract: MM4018 MM4037 MM4049 MM4052 MM4208 MM4208A MM4209 MM4209A MM4257 MM4258 MM8001 MM8006 -
OCR Scan
Abstract: : MM8006 Notes: Polarity: NPN Power Dissipation: .60 Tj: 200 VCBO: 15 VCEO: 10 hFE min: 25 hFE max: hFE A: 1.0 VCE: VCE A: hfe: fT: 1000 Case Style: TO-206AF/TO-72: Industry Type: MM8006 -
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MTH13N50 MRF531 MTM565 MM1758 MM3220 MM3904 MJE8502A MJF16010A MJF16018 MJF16206 MJF16204 MJF16212
Abstract: MOTOROLA SC - CDIODES/OPTOJ Ím DE Jfci3fci7555 0030055 S 6 3 6 7 2 5 5 MOTOROLA SC ( D IO D E S /O PT O ) SILICON RF TRANSISTOR DICE (continued) 34C 3 8 0 5 5 0 T -df-X s DIE NO. - NPN LINE SOURCE - RF502.191 This die provides performance equal to or better than that of the following device types: 2N5031 2N5032 2N5S35 MM8006 MM8007 2C5031 Designed for use in high-gain, lownoise, small-signal amplifiers. 6 · tT = 1000 MHz (min) @ lc = 5.0 mAdc · N F -
OCR Scan
1N5438 tfc 5630 germanium 2N4193 1N1319 germanium transistor 1N1803 1N1836 1N1816 2N3375 2N4391 2N4392
Abstract: MM4018 MM4037 MM4049 MM4052 MM4208 MM4208A MM4209 MM4209A MM4257 MM4258 MM8001 MM8006 -
OCR Scan
2N5121 2N5418 2N5539 2N5637
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