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MM8006 Datasheet

Part Manufacturer Description PDF Type Ordering
MM8006 N/A Basic Transistor and Cross Reference Specification
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1 pages,
47.36 Kb

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MM8006 N/A Shortform Transistor PDF Datasheet
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1 pages,
156.38 Kb

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MM8006 N/A Semiconductor Master Cross Reference Guide
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1 pages,
115.05 Kb

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MM8006 N/A Shortform Transistor Datasheet Guide
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1 pages,
92.62 Kb

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MM8006 Advanced Semiconductor
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1 pages,
15.16 Kb

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MM8006 Motorola Semiconductor Data Library Volume 3 1974
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4 pages,
222.45 Kb

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MM8006 Thomson-CSF Shortform Semiconductor Catalogue 1982
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1 pages,
124.29 Kb

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MM8006

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: MM8006 Silicon Transistors - NPN/PNP Small Signal Transistors Page 1 of 1 Silicon Transistors - NPN/PNP Small Signal Transistors Contact Factory for complete specification. STI Type MM8006 Tj 200 hFE max hfe Industry Type MM8006 Notes VCBO 15 hFE A 1.0 fT 1000 Polarity NPN VCEO 10 VCE Case Style TO-206AF/TO-72 Power Dissipation .60 hFE min 25 VCE A Visa & Mastercard Accepted! STI's Terms and Conditions 07-Sep-2010 Semiconductor Technology ... Semiconductor Technology
Original
datasheet

1 pages,
69.76 Kb

To206AF small signal transistors mm8006 MM8006 TEXT
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Abstract: MM8006 (siliconi MM8007 MM8007 NPN SILICON RF SMALL-SIGNAL TRANSISTORS . . . designed primarily for , Noise Figure — NF = 2.2dB (Typ) @ f = 200 MHz - MM8006 High Power Gain - Gpe = 25 dB (Typ) @ f = 200 MHz - MM8006 High Current-Gain—Bandwidth Product — fx = 1000 MHz (Min) @ iq » 5.0 mAdc NPN , = 200 MHz) MM8006 MM8007 MM8007 - 2.2 2.7 - tHe - 1-0 mAdc. VCE = 6.0 Vdc, f-450 MHz) MM8006 MM8007 MM8007 - - , Vdc, f - 60 MHz) Both Types - 30 - (lc - 1-0 mAdc, Vçg =6.0 Vdc, f = 200 MHz) MM8006 - 25 - ... OCR Scan
datasheet

4 pages,
222.45 Kb

MM8007 MM8006 MM800 M8006 M8007 TEXT
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Abstract: MM8006 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: PACKAGE STYLE TO-72 The ASI MM8006 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 50 mA VCBO 15 V PDISS 600 mW @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C CHARACTERISTICS 2 = BASE 3 = COLLECTOR 4 = CASE NONE TC = 25 °C SYMBOL BVCEO 1 = EMITTER TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS V IC = 3.0 mA ... Advanced Semiconductor
Original
datasheet

1 pages,
15.16 Kb

NPN silicon high frequency transistor MM8006 TEXT
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Abstract: MM8006 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V(BR)CEO (V)10 V(BR)CBO (V)15 I(C) Max. (A)20m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175Ãu I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) h(FE) Max. Current gain. @I(C) (A) (Test Condition)1.0m @V(CE) (V) (Test Condition)6.0 f(T) Min. (Hz) Transition Freq1.0G @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) Power Gain Min. (dB) @I(C) (A) (Test ... American Microsemiconductor
Original
datasheet

1 pages,
7.2 Kb

MM8006 TEXT
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Abstract: MOTOROLA SC - CDIODES/OPTOJ Ím DE Jfci3fci7555 0030055 S 6 3 6 7 2 5 5 MOTOROLA SC ( D IO D E S /O PT O ) SILICON RF TRANSISTOR DICE (continued) 34C 3 8 0 5 5 0 T -df-X s DIE NO. - NPN LINE SOURCE - RF502 RF502.191 This die provides performance equal to or better than that of the following device types: 2N5031 2N5031 2N5032 2N5032 2N5S35 2N5S35 MM8006 MM8007 MM8007 2C5031 2C5031 Designed for use in high-gain, lownoise, small-signal amplifiers. 6 · tT = 1000 MHz (min) @ lc = 5.0 mAdc · N F ... OCR Scan
datasheet

1 pages,
68.31 Kb

SILICON SMALL-SIGNAL transistor DICE SILICON SMALL-SIGNAL DICE TEXT
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Abstract: PN5134 PN5134 2N5134 2N5134 2N988 2N988 2N989 2N989 2SC930 2SC930 2SC930 2SC930 KT379V KT379V 2N3647 2N3647 ST6130 ST6130 MMT72 MMT72 2N5187 2N5187 MMBR5031 MMBR5031 MM8006 MM8007 MM8007 2N4251 2N4251 ... Advanced Semiconductor
Original
datasheet

1 pages,
104.52 Kb

2N2206 2n3681 2SC2821 2SC330 340t K918 MMBR5031 MMT3960A 2SC3029 MRF9331 TEXT
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Abstract: MM4018 MM4018 MM4037 MM4037 MM4049 MM4049 MM4052 MM4052 MM4208 MM4208 MM4208A MM4208A MM4209 MM4209 MM4209A MM4209A MM4257 MM4257 MM4258 MM4258 MM8001 MM8001 MM8006 ... OCR Scan
datasheet

1 pages,
56.97 Kb

TEXT
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Abstract: MTM26N40E : MM8006 Notes: Polarity: NPN Power Dissipation: .60 Tj: 200 VCBO: 15 VCEO: 10 hFE min: 25 hFE max: hFE A: 1.0 VCE: VCE A: hfe: fT: 1000 Case Style: TO-206AF/TO-72: Industry Type: MM8006 ... Original
datasheet

74 pages,
102.74 Kb

2N6424 DJ05AH MM2711 mm4049 mm4547 MRF225 MM4048 MM1712 transistor MTH7N50 mth5n100 2N6410 MM3004 MM1712 MM3904 MM3220 MJE8502A MM1758 MJE8502A MTM565 MJE8502A MRF531 MJE8502A MTH13N50 MJE8502A MJE8502A MJE8502A TEXT
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Abstract: MOTOROLA SC - CDIODES/OPTOJ Ím DE Jfci3fci7555 0030055 S 6 3 6 7 2 5 5 MOTOROLA SC ( D IO D E S /O PT O ) SILICON RF TRANSISTOR DICE (continued) 34C 3 8 0 5 5 0 T -df-X s DIE NO. - NPN LINE SOURCE - RF502 RF502.191 This die provides performance equal to or better than that of the following device types: 2N5031 2N5031 2N5032 2N5032 2N5S35 2N5S35 MM8006 MM8007 MM8007 2C5031 2C5031 Designed for use in high-gain, lownoise, small-signal amplifiers. 6 · tT = 1000 MHz (min) @ lc = 5.0 mAdc · N F ... OCR Scan
datasheet

pages,
0 Kb

A2023 transistor 2N5642 equivalent 2N217 1N1319 tfc 5630 TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
No abstract text available
/datasheets/files/motorola/design-n/lit/ldc_inv.htm
Motorola 25/11/1996 72.96 Kb HTM ldc_inv.htm

Shortform Datasheet Search

Part Manufacturer Description Shortform Datasheet Ordering
MM8006 N/A Silicon NPN

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MM8006 N/A Bipolar NPN UHF-Microwave Transisitor

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NTE Electronics Cross Reference Results

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NTE107 Buy MM8006 Buy

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