NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| MJE5730 | Motorola | European Master Selection Guide 1986 |
1 pages, |
Scan | |
| MJE5730 | Motorola / Freescale Semiconductor | 1.0 AMPERE POWER TRANSISTORS PNP SILICON 300-350-400 VOLTS 40 WATTS |
6 pages, |
Original | |
| MJE5730 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
Scan | |
| MJE5730 | N/A | Shortform Data and Cross References (Misc Datasheets) |
1 pages, |
Scan | |
| MJE5730 | On Semiconductor | High Voltage PNP Silicon Power Transistors |
8 pages, |
Original | |
| MJE5730 | On Semiconductor | High Voltage PNP Silicon Power Transistor |
8 pages, |
Original | |
| MJE-5730 | Semiconductor Technology, Inc. | NPN & PNP High Voltage Silicon High Power Transistors |
1 pages, |
Scan | |
| MJE5730 | Motorola | Motorola Semiconductor Data & Cross Reference Book |
1 pages, |
Scan | |
| MJE5730-D | On Semiconductor | High Voltage PNP Silicon Power Transistors |
8 pages, |
Original | |
| MJE5730G | On Semiconductor | Bipolar Power T0220 PNP 1A 300V |
5 pages, |
Original | |
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: ON Semiconductor ) MJE5730 MJE5731 MJE5731 MJE5731A MJE5731A High Voltage PNP Silicon Power Transistors . , Industries, LLC, 2002 April, 2002 ╜ Rev. 4 1 Publication Order Number: MJE5730/D 0.05 2 , ) MJE5730 MJE5731 MJE5731 MJE5731A MJE5731A Collector Cutoff Current (VCE = 300 Vdc, VBE = 0) (VCE = 350 Vdc, VBE = 0) (VCE = 400 Vdc, VBE = 0) MJE5730 MJE5731 MJE5731 MJE5731A MJE5731A ICES mAdc ICEO MJE5730 MJE5731 MJE5731 , unless otherwise noted) MJE5730 MJE5731 MJE5731 MJE5731A MJE5731A MJE5730 MJE5731 MJE5731 MJE5731A MJE5731A 1.4 1.0 1.2 ... | Original |
8 pages, |
TIP50 TIP47 MJE5732 MJE5731A MJE5731 MJE5730 MJE171 MJE5730 abstract |
| Abstract: Characteristic THERMAL CHARACTERISTICS Symbol MJE5730 MJE5731 MJE5731 MJE5731A MJE5731A Unit VCEO 300 , Voltage PNP Silicon Power Transistors MJE5730 MJE5731 MJE5731 MJE5731A MJE5731A SEMICONDUCTOR TECHNICAL DATA Order this document by MJE5730/D MOTOROLA 2 Figure 1. DC Current Gain 0.05 0.1 0.2 0.3 , ) (VCE = 300 Vdc, IB = 0) MJE5730 MJE5731 MJE5731 MJE5732 MJE5732 Collector Cutoff Current (VCE = 300 Vdc, VBE = 0) (VCE = 350 Vdc, VBE = 0) (VCE = 400 Vdc, VBE = 0) MJE5730 MJE5731 MJE5731 MJE5732 MJE5732 ICES mAdc ... | Original |
6 pages, |
TIP50 TIP47 MJE5732 MJE5731A MJE5731 MJE5730 MJE171 MJE5730/D MJE5730/D abstract |
| Abstract: Inductive Load Switching ORDERING INFORMATION Device MJE5730 MJE5730G MJE5731 MJE5731 Package Shipping , MJE5730, MJE5731 MJE5731, MJE5731A MJE5731A High Voltage PNP Silicon Plastic Power Transistors These devices are , Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage MJE5730 MJE5731 MJE5731 MJE5731A MJE5731A VCEO 300 350 375 Vdc Collector-Base Voltage MJE5730 MJE5731 MJE5731 MJE5731A MJE5731A , Publication Order Number: MJE5730/D MJE5730, MJE5731 MJE5731, MJE5731A MJE5731A ELECTRICAL CHARACTERISTICS (TC = 25_C ... | Original |
5 pages, |
TIP50 TIP47 MJE5731A MJE5731 MJE5730G MJE5730 MJE171 MJE5732 MJE5730 abstract |
| Abstract: ON Semiconductort MJE5730 MJE5731 MJE5731 MJE5731A MJE5731A High Voltage PNP Silicon Power Transistors . . , Industries, LLC, 2001 April, 2001 ╜ Rev. 3 1 Publication Order Number: MJE5730/D 0.05 2 , ) MJE5730 MJE5731 MJE5731 MJE5731A MJE5731A Collector Cutoff Current (VCE = 300 Vdc, VBE = 0) (VCE = 350 Vdc, VBE = 0) (VCE = 400 Vdc, VBE = 0) MJE5730 MJE5731 MJE5731 MJE5731A MJE5731A ICES mAdc ICEO MJE5730 MJE5731 MJE5731 , unless otherwise noted) MJE5730 MJE5731 MJE5731 MJE5731A MJE5731A MJE5730 MJE5731 MJE5731 MJE5731A MJE5731A 1.4 1.0 1.2 ... | Original |
8 pages, |
TIP50 TIP47 MJE5732 MJE5731A MJE5731 MJE5730 MJE171 MJE5730 abstract |
| Abstract: Inductive Load Switching ORDERING INFORMATION Device MJE5730 MJE5730G MJE5731 MJE5731 MJE5731G MJE5731G MJE5731A MJE5731A , MJE5730, MJE5731 MJE5731, MJE5731A MJE5731A High Voltage PNP Silicon Plastic Power Transistors These devices are , Collector-Emitter Voltage MJE5730 MJE5731 MJE5731 MJE5731A MJE5731A MJE5730 MJE5731 MJE5731 MJE5731A MJE5731A Symbol VCEO Value 300 350 375 300 350 , Industries, LLC, 2011 October, 2011 - Rev. 6 1 Publication Order Number: MJE5730/D MJE5730 , Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) MJE5730 MJE5731 MJE5731 MJE5731A MJE5731A MJE5730 MJE5731 MJE5731 MJE5731A MJE5731A VCEO(sus ... | Original |
5 pages, |
MJE5730 MJE5731 MJE5731A MJE5730 abstract |
| Abstract: RJA 62.5 _C/W Characteristic THERMAL CHARACTERISTICS Symbol MJE5730 MJE5731 MJE5731 , applications. High Voltage PNP Silicon Power Transistors MJE5730 MJE5731 MJE5731 MJE5731A MJE5731A SEMICONDUCTOR TECHNICAL DATA Order this document by MJE5730/D MOTOROLA 2 Figure 1. DC Current Gain 0.05 , = 0) MJE5730 MJE5731 MJE5731 MJE5731A MJE5731A Collector Cutoff Current (VCE = 300 Vdc, VBE = 0) (VCE = 350 Vdc, VBE = 0) (VCE = 400 Vdc, VBE = 0) MJE5730 MJE5731 MJE5731 MJE5731A MJE5731A ICES mAdc ICEO ... | Original |
6 pages, |
TIP50 TIP47 MJE5732 MJE5731A MJE5731 MJE5730 MJE171 MJE5730/D MJE5730/D abstract |
| Abstract: 0.3 10 440 300 TIP48 TIP48 MJE5730 30/150 0.3 2 typ 0.18 typ 0.3 10 40 350 TIP49 TIP49 MJE5731 MJE5731 30/150 0.3 2 ... | OCR Scan |
1 pages, |
TIP62C TIP29 TIP29A TIP29B TIP30 tip300 TIP30A TIP30B TIP62 TIP62A TIP62B B0239A d44c3 tip320 TIP290 datasheet abstract |
| Abstract: ST-13002 MJE-3440 MJE-3440 15 350 250 300 .50 30 .20 .50 1.3 .05 10 15 TO-126 STI-57301 STI-57301 MJE-5730 40 300 300 300 1.0 10 1.0 ... | OCR Scan |
1 pages, |
ST-13009 STI-5732 STH16018 STI-5740 13007 13002 TRANSISTOR SE 13007 transistor 13009 st13009 MJE-13002 MJE-8501 transistor d 13009 STH16006A transistor E 13009 GDDD533 ST44TE5 GDDD533 abstract |
| Abstract: STI Type: MJ13330 MJ13330 Notes: Polarity: NPN Power Dissipation: 175 VCEV: 400 VCEO: 200 ICEV: 400 ICEV A: .25 hFE: 8.0 hFE A: 15 VCE: 1.5 VBE: 1.8 IC: 10 COB: 400 fT: 5.0 Case Style: TO-204AA/TO-3: Industry Type: MJ13330 MJ13330 STI Type: MJ13101 MJ13101 Notes: Polarity: NPN Power Dissipation: 175 VCEV: 750 VCEO: 450 ICEV: 750 ICEV A: .50 hFE: 8.0 hFE A: 15 VCE: 1.0 VBE: 1.5 IC: 15 COB: 450 fT: Case Style: TO-204AA/TO-3: Industry Type: MJ13101 MJ13101 STI Type: MJ13331 MJ13331 Notes: Polarity: NPN ... | Original |
75 pages, |
mje15033 hfe 2500 MJE4923 MJE52T mj15024 MJ423 MJ4381 mj411 transistor data sheet MJ2250 MJ21194 MJE10001 MJ16016 MJ2252 MJ3247 MJ13330 MJ13330 MJ13330 abstract |
| Abstract: 0.3 typ 1 3 30 30/150 0.3 2 typ 0.18 typ 0.3 10 40 MJE5730 30/150 ... | Original |
20 pages, |
MJE13009 ballast pin configuration NPN transistor tip41c MJ15024 MJ15025 BD438 "direct replacement" BUT93 MJ15015 TRANSISTOR REPLACEMENT GUIDE electronic ballast with MJE13007 pin configuration NPN transistor BD679 motorola bipolar transistor GUIDE MJ10016 "cross reference" transistors cross reference MJW16212 220AB MJW16212 abstract |
| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| element component template mje5730 c b e #* # Model Generated by MODPEX * #Copyright(c) Symmetry Design Systems* # All Rights Reserved * # UNPUBLISHED LICENSED SOFTWARE * # Contains Proprietary Information * # Which is The Property of * # SYMMETRY OR ITS LICENSORS * # Modeling services provided by * # Interface Technologies www.i-t.com * #* # MODPEX model for BJT transistor mje5730 # Model generated on Jan 25, 2004 electrical c,b,e { # BODY www.datasheetarchive.com/files/on_semiconductor/simulation-models/mje5730.sin |
On Semiconductor | 30/03/2009 | 1.11 Kb | SIN | mje5730.sin |
| * * Model Generated by MODPEX * *Copyright(c) Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE * * Contains Proprietary Information * * Which is The Property of * * SYMMETRY OR ITS LICENSORS * * Modeling services provided by * * Interface Technologies www.i-t.com * * .MODEL mje5730 pnp +IS=1e-09 BF=57.3968 NF=1.16368 VAF=29.6707 +IKF=0.47415 ISE=1e-08 NE=1.93542 BR=0 www.datasheetarchive.com/files/on_semiconductor/simulation-models/mje5730.sp3 |
On Semiconductor | 30/03/2009 | 0.95 Kb | SP3 | mje5730.sp3 |
| * * Model Generated by MODPEX * *Copyright(c) Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE * * Contains Proprietary Information * * Which is The Property of * * SYMMETRY OR ITS LICENSORS * * Modeling services provided by * * Interface Technologies www.i-t.com * * .MODEL Qmje5730 pnp +IS=1e-09 BF=57.3968 NF=1.16368 VAF=29. www.datasheetarchive.com/files/on_semiconductor/simulation-models/mje5730.lib |
On Semiconductor | 30/03/2009 | 0.95 Kb | LIB | mje5730.lib |
| * * Model Generated by MODPEX * *Copyright(c) Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE * * Contains Proprietary Information * * Which is The Property of * * SYMMETRY OR ITS LICENSORS * * Modeling services provided by * * Interface Technologies www.i-t.com * * .MODEL Qmje5730 pnp +IS=1e-09 BF=57.3968 NF=1.16368 VAF=29. www.datasheetarchive.com/files/on_semiconductor/simulation-models/mje5730.sp2 |
On Semiconductor | 30/03/2009 | 0.95 Kb | SP2 | mje5730.sp2 |
| Silicon Power Transistors MJE5730/D (76.0kB) 5 100 High www.datasheetarchive.com/files/on-semiconductor/taxonomy/bipolartransistors.htm |
On Semiconductor | 28/09/2007 | 122.37 Kb | HTM | bipolartransistors.htm |
| Literature Index Items Available at The Literature Center NOTE: Some of these items may be chargeable items AS OF 07/25/96 1.5SMC6.8T3/D 10223/D 10223/D 10223/D 10223/D 120DDSEVK/D 120DDSEVK/D 120DDSEVK/D 120DDSEVK/D 120NCO/D 120NCO/D 120NCO/D 120NCO/D 14489/D 14489/D 14489/D 14489/D 145152-2/D 145152-2/D 145152-2/D 145152-2/D 188100/D 188100/D 188100/D 188100/D 196002/D 196002/D 196002/D 196002/D 1C5283/D 1C5283/D 1C5283/D 1C5283/D 1C5333/D 1C5333/D 1C5333/D 1C5333/D 1C746/D 1C746/D 1C746/D 1C746/D 1C821/D 1C821/D 1C821/D 1C821/D 1N4001/D 1N4001/D 1N4001/D 1N4001/D 1N4565/D 1N4565/D 1N4565/D 1N4565/D 1N4678/D 1N4678/D 1N4678/D 1N4678/D 1N4728/D 1N4728/D 1N4728/D 1N4728/D 1N4933/D 1N4933/D 1N4933/D 1N4933/D 1N5139/D 1N5139/D 1N5139/D 1N5139/D www.datasheetarchive.com/files/motorola/design-n/lit/ldc_inv.htm |
Motorola | 25/11/1996 | 72.96 Kb | HTM | ldc_inv.htm |
| * Library of power bipolar transistor model parameters * $Revision: 1.2 $ * $Author: HIRASUNA $ * $Date: 11 May 2000 13:26:32 $ * *- * Cadence Design Systems, Inc. would like to acknowledge Sandia National * Laboratories for the contribution of their measurement-based models * included in this library. *- * The parameters in www.datasheetarchive.com/files/spicemodels/misc/pwrbjt.lib |
Spice Models | 17/06/2000 | 277.98 Kb | LIB | pwrbjt.lib |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
| MJE5730G Buy | 5961-01-455-6271 Buy | Motorola | Close |
| MJE5730G Buy | MJE5730 Buy | American Microsemiconductor | Close |
| MJE5730G Buy | STI5730 Buy | Semiconductor Technology, Inc. | Close |
| Part | Similar Part | Notes |