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Part : MJE13008 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 28 Best Price : $1.8750 Price Each : $3.00
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MJE13008 Datasheet

Part Manufacturer Description PDF Type
MJE13008 Philips Semiconductors Silicon Diffused Power Transistors Original
MJE13008 STMicroelectronics Original
MJE13008 Central Semiconductor Leaded Power Transistor General Purpose Scan
MJE13008 Central Semiconductor Power Transistors Scan
MJE13008 General Electric Power Transistor Data Book 1985 Scan
MJE13008 Mospec POWER TRANSISTORS(12A,300-400V,100W) Scan
MJE13008 Motorola European Master Selection Guide 1986 Scan
MJE13008 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
MJE13008 Motorola Switchmode Datasheet Scan
MJE13008 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
MJE13008 N/A Semiconductor Master Cross Reference Guide Scan
MJE13008 N/A Shortform Transistor Datasheet Guide Scan
MJE13008 N/A Shortform Data and Cross References (Misc Datasheets) Scan
MJE13008 N/A Shortform Transistor PDF Datasheet Scan
MJE13008 N/A Shortform Transistor PDF Datasheet Scan
MJE13008 Philips Semiconductors High Speed, High Voltage Transistors Scan
MJE13008 Semiconductor Technology NPN High Voltage Power Transistors in TO-3 and TO-220 Case Outline Scan
MJE-13008 Semiconductor Technology NPN & PNP High Voltage Silicon High Power Transistors Scan
MJE13008 STMicroelectronics Shortform Data Book 1988 Scan
MJE13008 Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan

MJE13008

Catalog Datasheet MFG & Type PDF Document Tags

MJE13008

Abstract: 13009 MJE13008/13009 MJE13008/13009 High Voltage Switch Mode Application · High Speed Switching · , Collector-Base Voltage : MJE13008 : MJE13009 VCEO Collector-Emitter Voltage : MJE13008 : MJE13009 VEBO IC ICP IB , noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : MJE13008 : MJE13009 Emitter , . A1, February 2001 MJE13008/13009 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION , 1 0.1 tF 100 0.1 0.01 1 10 100 1 10 MJE13008 MJE13009 100 1000 IC[A], COLLECTOR
Fairchild Semiconductor
Original
13009 MJE13008/13009 PW300

tr 13009

Abstract: mje13008 MJE13008/13009 MJE13008/13009 High Voltage Switch Mode Applications · High Speed Switching · , Collector-Base Voltage : MJE13008 : MJE13009 VCEO Collector-Emitter Voltage : MJE13008 : MJE13009 VEBO IC ICP IB , noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : MJE13008 : MJE13009 Emitter , . A2, June 2001 MJE13008/13009 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION , 1 0.1 tF 100 0.1 0.01 1 10 100 1 10 MJE13008 MJE13009 100 1000 IC[A], COLLECTOR
Fairchild Semiconductor
Original
tr 13009 MJE13009 fairchild semiconductor

JE13009

Abstract: mje13008 SWITCHING TRANSISTORS . MJE13008 IS SGS-THOMSON PREFERRED SALESTYPE. DESCRIPTION The MJE13008 and , U nit MJE13008 MJE13009 VCEO Collector-Emitter Voltage (I b = 0) 300 400 V , °C 150 °C Ti October 1995 1/4 7^237 â¡0bc iS3ti hSG MJE13008 THERMAL DATA , Sustaining Voltage lc = 10 mA for MJE13008 for MJE13009 lc lc = 5 A 8 A lc = 12 A lc = 8 A T , us |AS MJE13008 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN
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OCR Scan
JE13009 JE13008

mje13008

Abstract: MJE-13008 MJE13008 MJE13009 SILICON NPN SWITCHING TRANSISTORS n MJE13008 IS SGS-THOMSON PREFERRED SALESTYPE. DESCRIPTION The MJE13008 and MJE13009 are multiepitaxial mesa NPN transistor. They are , Symb ol Parameter Valu e Unit MJE13008 MJE13009 400 V CEO Collector-Emitter , emperature October 1995 100 W -65 to 150 o C 150 o C 1/4 MJE13008 THERMAL , duration = 300µs, duty cycle 2 % 2/4 Max. 1 V EB = 9 V I C = 10 mA for MJE13008 for MJE13009
STMicroelectronics
Original
SGS-Thomson P011C

e13009

Abstract: e13008 us (Max.) @ lc =8.0 A * SOA and Switching Aplication Information. MAXIMUM RATINGS NPN MJE13008 , 0.55 M 2.48 2.98 O 3.70 3.90 MJE13008, MJE13009 NPN ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless , Voltage (lc= 10 mA, lB= 0) MJE13008 MJE13009 ^CEO(sus) 300 400 V Collector Cutoff Current (Veer Rated , (VOLTS) 100 200 500 MJE13008, MJE13009 NPN TURN-ON TIME TURN-OFF TIME lc, COLLECTOR CURRENT (AMP) lc
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OCR Scan
MJE13003 e13009 e13008 MJE-13009 E13009 F E1300 E13009 l E13008

1B16A

Abstract: B216A description The CENTRAL SEMICONDUCTOR MJE13008, MJE13009 types are Silicon npn Transistors designed for high voltage, high speed switching applications. MAXIMUM RATINGS(Tr=25°C) Collector-Emitter Voltage (VBE=1.5V) Collector-Emitter Voltage Emitter Base Voltage Emitter Current Emitter Current (PEAK , SYMBOL MJE13008 MJE13009 UNIT VCEV 600 700 V VCE0 300 400 V vEB0 9.0 9.0 V 'E 18 18 A 'EM 36 36 A , 1.25 1.25 °C/W otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNIT BVce0 (MJE13008) lc=10mA 300
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OCR Scan
1B16A B216A

MJE13009AR

Abstract: JE13008 r z T SGS-THOMSON Ä 7 # RaDeæi[Liero©iDei MJE13008 MJE13009 SILICON NPN SWITCHING TRANSISTORS . MJE13008 IS SGS-THOMSON PREFERRED SALESTYPE. DESCRIPTION The MJE13008and MJE13009are , Tj °c 1/4 O ctober 1995 MJE13008 THERMAL DATA »thj-case T h e rm a l R e sista n , SGS-THOMSON " 7 # M D C H K H aEC lTnO U O C S MJE13008 TO-220 MECHANICAL DATA mm MIN. A C D D1 E F , O C S 3/4 MJE13008 Information furnished is believed to be accurate and reliable. However
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OCR Scan
MJE13009AR MJE13009A

E 13009 2

Abstract: e 13009 l , motor controls, solenoid/relay drivers and deflection circuits. QUICK REFERENCE DATA MJE13008 13009 , Limiting values in accordance with the Absolute Maximum System (I EC 134) MJE13008 â , -33-13 CHARACTERISTICS Tj = 25 °C unless otherwise specified MJE13008 Collector-emitter sustaining voltage l c = 10
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OCR Scan
E 13009 2 e 13009 l EB 13009 D transistor E 13009 p 13009 D 13009 K S3T31 T-33-13

transistor d 13009

Abstract: transistor E 13009 MOTOROLA TECHNICAL DATA SEMICONDUCTOR MJE13008 MJE13009 S h e e t 12 A M P E R E D e s i , -22ÛAB 3-958 HOTORCLA SC XSTRS/R F 12E | t a b T S S U 00 8 54 01 S | _ MJE13008 , | MJE13008, MJE13009 T - 3 3 -J 3 F IG U R E 5 - D C C U R R E N T G A IN F IG U R E 6 - C O L L E C T , 3b?2S4 GQÛ5MQ7 0 | MJE13008, MJE13009 T A B L E 1 - T E S T C O N D IT IO N S F O R D Y N A M , XSTRS/R F D | b3b?2S4 OOflSMQfl 2 | MJE13008, MJE13009 T - 3 -3 - J 3 V O L T A G E R E Q
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OCR Scan
transistor d 13009 n752 E 13009 E 13009 TRANSISTOR motorola J 13009 - 2 e 13009 p

transistor E 13009

Abstract: transistor d 13009 . MJE13008 13009 VCESM max. 600 700 V VCEO max. 300 400 V 1.5 8.0 12 24 100 A A A W MECHANICAL DATA , '¢ MJE13008 13009 VCESM max. 600 700 V vCEO , max. 300 400 V 9.0 8.0 12 24 6.0 12 18 36 2 16 100 800 , T-33-13 MJE13008 13009 Collector-emitter sustaining voltage IC= 10 mA; IÃ = 0 VCEOsust min- 300
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OCR Scan
transistor 13009 e 13009 f transistor MJE 13009 13008 TRANSISTOR J 13009 13009 TRANSISTOR 53T31 T0-220
Abstract: H A RR IS S E M I C O N D S E C T O R E7E I > â  4302271 0020471 _ F ile N u m b e r 1 â  HAS Power Transistors MJE13008 15.91 T -2 3 - I 3 H igh-S peed , Tâ'" 33â'" 13 MJE13008 HARRIS SEMICOND SECTOR 27E D B 4302271 002Ã472 , Tran sistors MJE13008 SEMICOND HARRIS 27E SECTOR » M302271 QQ20M74 7 «HAS , Power Transistors MJE13008 Tâ'" 33â'" 13 T I M E 2 0 n s / O IV F IG U R E 13 - IN D -
OCR Scan
43G2271 Q02G475

mje13008

Abstract: C735 NPN POWER TRANSISTORS MJE13008 300 VOLTS 12 AMP, 100 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. Features: â'¢ VCEO(sus) = 300V (Min). â'¢ VCEV = 600V blocking capability â'¢ Excellent switching time: tr = 1 ¡¿s (Max.). tf = 0.7 ns (Max.) NPN COLLECTOR CASE STYLE TO-22ÃAB DIMENSIONS ARE IN INCHES AND , = 25° C) (unless otherwise specified) RATING SYMBOL MJE13008 UNITS Collector-Emitter Voltage VcEO 300
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OCR Scan
C735
Abstract: MJE13007 MJE13007A MJE13008 MJE13009 MJE700T MJE701T MJE702T MJE703T MJE2901T MJE2955T Shaded -
OCR Scan
2N6497 2N6498 2N6499 2N6530 2N6531 2N6532

045h11

Abstract: bu4060 8.0 80 700 400 5.0 30 5.0 1.0 2.0 4.0 mje13007a 8.0 80 850 400 5.0 30 5.0 3.0 8.0 4.0 mje13008 12
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OCR Scan
045h11 bu4060 bu406d BU407D MJE3055T
Abstract: M O T O R O L A S C O I O D E S / O P T O J " 3 4 D È T | k 3 b ? E S S 3 7 T b t . fi 6367255 MOTOROLA SC ( DIODES/OPTO) 34c 37966 7 "'< 3 3 " O f D SILICON POWER TRANSISTOR DICE (continued) DIE NO. - NPN LINE SOURCE - PL500.E586 This die provides performance equal to or better than that of the following device types: MJE13008 MJE13009 & MJEC13009 Designed for highvoltage, high-speed power switching -
OCR Scan

mj 13003

Abstract: transistor MJ 13009 -220 MJE13006 STI-13006 600* 6 5.0 TO-220 MJE13007 STI-13007 700* 6 5.0 TO-220 MJE13008 STI-13008 600* 6 8.0
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OCR Scan
MJE13000 mj 13003 transistor MJ 13009 transistor MJ 13003 transistor MJ 13007 mj 13002 MJ410 STI-410 MJ411 STI-411 MJ413

MJE700T

Abstract: 2N6530 1.0 1.0 . MJE803T MJE2801T MJE3055T MJE13004 MJE13005 MJE13006 MJE13007 MJE13007A MJE13008
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OCR Scan
2N6533 BU406 BU407 BU408 BU408D BU806

MJE13009

Abstract: MJE-13009 MJE13008 12 100 600 300 6.0 30 8.0 1.0 5.0 4.0 MJE13009 12 100
Central Semiconductor
Original
D45H11 D44C11 Data mje13009 equivalent MJE800T equivalent BU807 D44C11 D44H11 MJE800T MJE801T

BUS36

Abstract: D45VH4 POWER TRANSISTORS â'" BIPOLAR PLASTIC (continued) TO-220AB Package (continued) Resistive Switching ts ti fT PD (Case) ¡cCont VcEO (sus) Device Type hpE @ le MS MS @ lc MHz Watts Amps Max Volts Min NPN PNP Min/Max Amp Max Max Amp Min @ 25°C 12 90 BUV26 1 0.15 12 85 120 BUV27 1.2 0.40 8 85 BUS36 30 min 10 0.5 typ 0.12 typ 12 30 107 150 BUS37 30 min 10 0.5 typ 0.12 typ 12 30 107 300 MJE13008 6/30 8 3 0.7 8 4 100 400 MJE13009 6/30 8 3 0.7 8 4 100 15 30
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OCR Scan
D44VH1 D45VH1 2N6486 2N6489 D44VH4 D45VH4 ccont D44VH7 MJ10047

bu408 equivalent

Abstract: 330.150 MJE13008 12 100 600 300 6.0 30 8.0 1.0 5.0 4.0 MJE13009 12 100
Central Semiconductor
Original
bu408 equivalent 330.150 bu806 equivalent equivalent mje13005 mje13007 equivalent MJE802T

mj 13007

Abstract: mj 13005 8.0 80 700 400 5.0 30 5.0 1.0 2.0 4.0 mje13007a 8.0 80 850 400 5.0 30 5.0 3.0 8.0 4.0 mje13008 12
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OCR Scan
mj 13007 mj 13005 13005 A mj 13009 13005a 13007 BUW35
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