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Part : MJE13006 Supplier : NTE Electronics Manufacturer : Newark element14 Stock : 379 Best Price : $1.80 Price Each : $2.34
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MJE13006 Datasheet

Part Manufacturer Description PDF Type
MJE13006 Continental Device India NPN PLASTIC POWER TRANSISTORS Original
MJE13006 Fairchild Semiconductor NPN Silicon Transistor Original
MJE13006 Philips Semiconductors Silicon Diffused Power Transistor Original
MJE13006 Central Semiconductor General Purpose Bipolar Transistor: NPN: 300V: TO-220: 3-Pin Scan
MJE13006 Central Semiconductor Power Transistors Scan
MJE13006 General Electric Power Transistor Data Book 1985 Scan
MJE13006 Mospec POWER TRANSISTORS(8A,300-400V,80W) Scan
MJE13006 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
MJE13006 Motorola Switchmode Datasheet Scan
MJE13006 N/A Shortform Transistor PDF Datasheet Scan
MJE13006 N/A Shortform Transistor PDF Datasheet Scan
MJE13006 N/A Transistor Replacements Scan
MJE13006 N/A Transistor Replacements Scan
MJE13006 N/A Cross Reference Datasheet Scan
MJE13006 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
MJE13006 N/A Semiconductor Master Cross Reference Guide Scan
MJE13006 N/A Shortform Transistor Datasheet Guide Scan
MJE13006 N/A Shortform Data and Cross References (Misc Datasheets) Scan
MJE13006 Philips Semiconductors High Speed, High Voltage Transistors Scan
MJE13006 Semiconductor Technology NPN High Voltage Power Transistors in TO-3 and TO-220 Case Outline Scan
Showing first 20 results.

MJE13006

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: MJE13006/13007 MJE13006/13007 High Voltage Switch Mode Application · High Speed Switching · , Collector-Base Voltage Parameter : MJE13006 : MJE13007 Value 600 700 Units V V VCEO Collector-Emitter Voltage : MJE13006 : MJE13007 300 400 V V VEBO Emitter- Base Voltage 9 V , otherwise noted Symbol BVCEO Parameter Collector- Emitter Breakdown Voltage : MJE13006 : MJE13007 , Fairchild Semiconductor Corporation Rev. A1, February 2001 MJE13006/13007 VBE(sat), VCE(sat)[V Fairchild Semiconductor
Original
tr 13007 transistor 13007 T 13007 D 13007 NPN Transistor 13007 13007* transistor MJE13006/13007
Abstract: MJE13006/13007 MJE13006/13007 High Voltage Switch Mode Applications · High Speed Switching · , Temperature Storage Temperature : MJE13006 : MJE13007 : MJE13006 : MJE13007 Value 600 700 300 400 9 8 16 4 80 , noted Symbol BVCEO Parameter Collector- Emitter Breakdown Voltage : MJE13006 : MJE13007 Emitter Cut-off , MJE13006/13007 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 10 VCE , 1000 10 10 s 0u DC 1 1m s 100 tF 0.1 MJE13006 MJE13007 10 0.1 0.01 1 10 1 10 Fairchild Semiconductor
Original
13007 h3 13007 2 transistor 13007 13007 switching application ste+13007 PW300
Abstract: MJE13006_MJE13007Rev240402E Continental Device India Limited Data Sheet Page 4 of 4 Continental Device India , Certified Manufacturer NPN PLASTIC POWER TRANSISTORS MJE13006 MJE13007 TO-220 Plastic Package , MJE13006 300 600 9 8 16 4 8 12 24 2 16 80 640 PD Tj, Tstg UNIT V V V A A A A A , SYMBOL TEST CONDITION *VCEO(sus) IC=10mA, IB=0 Collector Emitter sustaining voltage MJE13006 , Page 1 of 4 mA mA NPN PLASTIC POWER TRANSISTORS MJE13006 MJE13007 TO-220 Plastic Package Continental Device India
Original
mje13006_mje13007rev240402e C-120 MJE13007R 240402E
Abstract: MJE13006 / MJE13007 NPN Silicon Power Transistors High Voltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor Control TO-220 Plastic Package , MJE13006 MJE13007 Collector Emitter Voltage MJE13006 VCEO MJE13007 Emitter Base Voltage C , /2002 MJE13006 / MJE13007 Characteristics at Ta=25 OC Symbol Min. Typ. Max. Unit at , Current Gain Collector Emitter Breakdown Voltage at IC=10mA MJE13006 BVCEO 300 - - V Semtech Electronics
Original
MJE-13007 MJE-13006 mje13007 equivalent
Abstract: subject to change without notice. bfa53«ì3i aani3i a MJE13006 MJE13007 N AMER PHILIPS/DISCRETE 2SE D , . max. max. max. MJE13006 MJE13007 60Q 700 300 400 1.5 5.0 8.0 13 80 V V A A A w MECHANICAL , PHILIPS/DISCRETE MJE13006 MJE13007 25E J> t.bS3T3i 0Gni3a a T-33-13 RATINGS Limiting values in , j-mb Rth j-a max. max. max. max. max. max. max. max. max. max. MJE13006 MJE13007 600 700 300 , MJE13006 MJE13007 < Q tZ UJ g O -J Ui > lu a CHARACTERISTICS Tj = 25 °C unless otherwise -
OCR Scan
13006 TRANSISTOR mje13007 TRANSISTOR MJE13007Q transistor 13006 T0-220 S3T31 7Z24230
Abstract: email@cdil.com www.cdilsemi.com MJE13006_MJE13007Rev240402E Continental Device India Limited Data Sheet , PLASTIC POWER TRANSISTORS MJE13006 MJE13007 TO-220 Plastic Package Switchmode Series NPN Silicon , SYMBOL VCEO (sus) VCEV VEBO IC ICM IB IBM IE IEM PD MJE13007 400 700 MJE13006 300 600 , TEST CONDITION *VCEO(sus) IC=10mA, IB=0 Collector Emitter sustaining voltage MJE13006 MJE13007 , Page 1 of 4 mA mA NPN PLASTIC POWER TRANSISTORS MJE13006 MJE13007 TO-220 Plastic Package Continental Device India
Original
Abstract: [ r b t5 3 i3 i DEVELOPMENT DATA d o n m a â  MJE13006 MJE13007 Thf$ data , , m otor controls, solenoid/relay drivers and deflection circuits, QUICK REFERENCE DATA MJE13006 , / N AMER PHILIPS/DISCRETE 5SE bb53^31 0 D n i 3 3 S U » # â'¢ MJE13006 MJE13007 , ) MJE13006 MJE13007 * â  Collector-emitter voltage peak value; V b e = 0 open base V CESM v , /DISCRETE ESE bbS3131 0011133 4 » Silicon diffused power transistors J V MJE13006 -
OCR Scan
53T31 7Z2423Q
Abstract: email@cdil.com www.cdilsemi.com MJE13006_MJE13007Rev240402E Continental Device India Limited Data Sheet , POWER TRANSISTORS MJE13006 MJE13007 TO-220 Plastic Package Switchmode Series NPN Silicon Power , ) VCEV VEBO IC ICM IB IBM IE IEM PD MJE13007 400 700 MJE13006 300 600 9 8 16 4 8 , =10mA, IB=0 Collector Emitter sustaining voltage MJE13006 MJE13007 ICEV VCEV=Rated Value,VBE=(off)=1.5V , TRANSISTORS MJE13006 MJE13007 TO-220 Plastic Package ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Continental Device India
Original
power 220 ISO/TS16949
Abstract:  mm n ' MJE13006 MJE13007 Central Semiconductor Central Semiconductor 1 48-B Lamar Street West Babylon, New York 1 1 704 +iHf NPN SILICON TRANSISTOR JEDEC T0-220 CASE description The CENTRAL SEMICONDUCTOR MJE13006, MJE13007 types are Silicon NPN Transistors designed for high voltage, high speed , vcev vceo veb0 "e 'em ic 'cm >b >bm Pd Tj> 9 jc stg bvce0 (mje13006) bvce0 (mje13007) 'cev , ( MJE13006 MJE13007 UNIT 600 700 V 300 400 V 9.0 9.0 V 12 12 A 2k 2k A 8.0 8.0 A 16 16 A k.O -
OCR Scan
Abstract: Fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com MJE13006_MJE13007Rev240402E , PLASTIC POWER TRANSISTORS MJE13006 MJE13007 TO-220 Plastic Package Switchmode Series NPN Silicon , SYMBOL VCEO (sus) VCEV VEBO IC ICM IB IBM IE IEM PD MJE13007 400 700 MJE13006 300 600 , (sus) IC=10mA, IB=0 Collector Emitter sustaining voltage MJE13006 MJE13007 ICEV VCEV=Rated Value , PLASTIC POWER TRANSISTORS MJE13006 MJE13007 TO-220 Plastic Package ELECTRICAL CHARACTERISTICS (Tc Continental Device India
Original
Abstract: * Colledor-bmitter Saturation Voltage - NPN MJE13006 MJE13007 CE(sat) : 3.0 V (Max.) ©Ic = 8.0 A, lB = 2.0 A , TRANASISTORS 300-400 VOLTS 80 WATTS MAXIMUM RATINGS Characteristic Symbol MJE13006 MJE13007 Unit , 2.97 L 0.33 0.55 M 2.48 2.98 0 3.70 3.90 MJE13006, MJE13007 NPN ELECTRICAL CHARACTERISTICS (Tc = , Collector-Emitter Sustaining Voltage (l_= 10 mA,l-= 0) MJE13006 MJE13007 ^CEO(sus) 300 400 V Collector Cutoff , MJE13006, MJE13007 NPN TURN-ON TIME lc , COLLECTOR CURRENT (AMP) TURN-OFF TIME Iâ'"là -
OCR Scan
E13006 E13007 E13007 2 e13007 1 E13007- 2 E13007-
Abstract: T ranslstors File Num ber MJE13006 15.89 T~-33- !3 H igh-S peed Silicon N -P -N , D ESIG NATION The MJE13006 silicon n -p-n power tra nsistor features highvoltage capability, fast , ollector-E m itter Voltage SYMBOL VcEO MJE13006 300 UNITS Volts C ollector-E m itter Voltage , °C 4302571 G0204L2 â¡ â  HAS Power Transistors MJE13006 ELECTRICAL , 00204b3 2 MHAS Power Transistors MJE13006 Tâ'"33â'"13 10 20 30 50 70 -
OCR Scan
005Q4 QQ204
Abstract: MJE13006-MJE13007-MJE13007A 7^2^237 002^110 S G S-TH0MS0N THERM AL DATA Rth j â  3DE » Thermal , . 7c c i2 J237 â¡â¡2^111 7 Safe Operating Areas. MJE13006-MJE13007-MJE13007A Clamped Reverse , O S T im 5 â  7T2T237 0 0 2^ 1 1 5 M â  MJE13006-MJE13007-MJE13007A S G , MJE13006 MJE13007/A S G S-THOMSON 3GE D MOTOR CONTROL, SWITCH REGULATORS DESC RIPTIO N The MJE13006, MJE13007 and MJE13007Aare si­ licon multiepitaxial mesa NPN transistors. They are mounted in -
OCR Scan
73232J7 MJE13007A
Abstract: NPN POWER TRANSISTORS MJE13006 300 volts 8 amp, 80 watts Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. Features: â'¢ VcEO(sus) = 300V (Min). â'¢ VCEV = 600V blocking capability â'¢ Excellent switching time: tr = 1.5 ms (Max.), tf = 0.7 ms (Max.) case style t0-220ab DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 404(10.26 , specified) rating symbol mje13006 units Collector-Emitter Voltage vceo 300 Volts Collector-Emitter -
OCR Scan
voltage regulator IC 723 6221 ic IC 723 voltage regulator applications
Abstract: BREAKDOWN LIMIT CURVES APPLY BELOW RATED VcEO: MJE13006f^ MJE13Q07 20 30 SO 70 100 200 300 V 8 E ( o f f , MOTOROLA TECHNICAL DATA SEMICONDUCTOR MJE13006 MJE13007 8 AM PERE D esigners Data, Sheet NPN , S TR S/ R F igg D | b3fc,?aS4 OGÒSBIti T | MJE13006, MJE13007 E L E C T R I C A L C H A R A , .3b?254 00053=17 1 | MJE13006, MJE13007 7^ - 3 3 -/3 F IG U R E 1 - F O R W A R D B IA S S A F E O P E R A T , f t l) 3-952 MGTORCLA SC XST RS/ R F 12E O | fc,3fc,7254 GOflSBIÛ 3 | MJE13006 -
OCR Scan
MJE13007E JE13006 JE13007
Abstract: 150 °C D ecem ber 1988 1/7 863 MJE13006-MJE13007-MJE13007A THERMAL DATA Rth -case , f Z 7 SCS-THOMSON ^7# MJE13006 MJE13007/A [» ^ ® iy iO T ® K S MOTOR CONTROL, SWITCH REGULATORS DESCRIPTION The MJE13006, MJE13007 and MJE13007A are si­ licon multiepitaxial mesa NPN transistors. They are mounted in Jedec TO-220 plastic package, inten­ ded tor use in motor controls, switching regulator's etc. ABSOLUTE MAXIMUM RATINGS V a lu e Sym bol P a r a m e te r -
OCR Scan
JE13007A 13006-M JE13007-M 2N5191 JE13006-M 3006-M
Abstract: MJE13006 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING MODE APPLICATION * High Speed Switching * Suitable for switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS at Tairib=25*C Symbol Rating Characteristic Collector-Base Voltage Vcbo 600 CoHector-Emitter Voltage Vceo 300 Vebo Ic 9 3 16 4 80 150 to lb Pc T 5 Tstg i Rotter-Base Voltage Collector Current -
OCR Scan
Abstract: MOTOROLA SC -CDI0DES/0PT03- TÏ DE|b3L,72S5 0037T37 1 f 6367255 MOTOROLA SC 34C 37937 0 SILICON POWER TRANSISTOR DICE (continued) T -33-0/ DIE NO. - NPN LINE SOURCE - PL500.92 NPN PNP 2C5760 / 2N3442 2N4348 2NS632 2N5633 2NS634 2N5758 2NS759 die no. - pnp LINE SOURCE - PL500.59 2C6228 This die provides performance equal to or better than that of the following device types: NPN 2N5760 2N5881 2NS882 MJ15001 MJE13006 -
OCR Scan
2N6226 2N6226 MOTOROLA 2N5879 2N5880 2N6227 2N6228
Abstract: D44H11 D45H11 MJE800T MJE801T MJE802T MJE803T MJE2801T MJE3055T MJE13004 MJE13005 MJE13006 -
OCR Scan
2N6497 2N6498 2N6499 2N6530 2N6531 2N6532
Abstract: -220 MJE13006 STI-13006 600* 6 5.0 TO-220 MJE13007 STI-13007 700* 6 5.0 TO-220 MJE13008 STI-13008 600* 6 8.0 -
OCR Scan
MJE13000 mj 13003 transistor MJ 13009 transistor MJ 13003 transistor MJ 13007 mj 13002 MJ410 STI-410 MJ411 STI-411 MJ413
Abstract: TYP 3 â'¢4 75 300 yes MJE13006 6/30 5 3 0.7 5 4 80 400 yes MJE13007 6/30 5 3 0.7 5 4 80 10 -
OCR Scan
TIP29 TIP30 TIP29A TIP30A TIP29B TIP30B MJE130076 2n6946 2N6122 transistor tipi transistor TIP47 TIP30C
Showing first 20 results.