NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| MJD31 | Fairchild Semiconductor | NPN Epitaxial Silicon Transistor |
5 pages, |
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| MJD31 | Fairchild Semiconductor | NPN EPITAXIAL SILICON TRANSISTOR |
4 pages, |
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| MJD31 | Fairchild Semiconductor | NPN EPITAXIAL SILICON TRANSISTOR |
4 pages, |
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| MJD31 | Motorola / Freescale Semiconductor | SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS |
6 pages, |
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| MJD31 | N/A | Shortform Data and Cross References (Misc Datasheets) |
1 pages, |
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| MJD31 | On Semiconductor | Complementary Power Transistors |
8 pages, |
Original | |
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| MJD31 | Motorola | Motorola Semiconductor Data & Cross Reference Book |
6 pages, |
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| MJD31-1 | Motorola / Freescale Semiconductor | SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS |
6 pages, |
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| MJD31-1 | N/A | Shortform Data and Cross References (Misc Datasheets) |
1 pages, |
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| MJD31-1 | Motorola | Motorola Semiconductor Data & Cross Reference Book |
1 pages, |
Scan | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Purposes SYMBOL VCEO VCBO VEBO IC ICP IB MJD31C/MJD32C MJD31/MJD32 100 100 40 40 , TEST CONDITION MIN TYP VCEO IC=1mA, IB=0 Collector Emitter Voltage MJD31/MJD32 40 MJD31C/MJD32C 100 ICEO VCE=40V, IB=0 MJD31/MJD32 Collector Cut Off Current VCE=60V, IB=0 MJD31C/MJD32C , MJD31C MJD31 CDIL XY XY MX MX MX XY= Date Code MJD31/C_32/C Rev260505E , COMPLEMENTARY PLASTIC POWER TRANSISTORS MJD31, C NPN MJD32 MJD32, C PNP DPAK (TO-252) Plastic Package ... | Original |
5 pages, |
MJD32C MJD32 MJD31C MJD31 marking code XY marking CODE MX voltage marking c32 MJD31 abstract |
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| Abstract: Transistors SMD Type Complementary Power Transistors MJD31,MJD31C(NPN) MJD32 MJD32,MJD32C MJD32C(PNP , Symbol MJD31,MJD32 MJD32 MJD31,MJD32 MJD32 Unit VCB MJD31C,MJD32C MJD32C 40 V 100 VCEO MJD31C , SMD Type MJD31,MJD31C(NPN) MJD32 MJD32,MJD32C MJD32C(PNP) Electrical Characteristics Ta = 25 Parameter , ICEO VCE = 40 V, IB = 0 50 ìA VCE = 60 V, IB = 0 MJD31,MJD32 MJD32 MJD31C,MJD32C MJD32C 50 ìA , cycle 2.0%. ftest hFE Classification TYPE 2 MJD31 MJD31C MJD32 MJD32 MJD32C MJD32C ... | Original |
2 pages, |
MJD31C MJD32C MJD32 SMD NPN MJD31 J31C smd j32-C J31C ON smd j31c J31C TO-252 J32C J31C MJD31 abstract |
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| Abstract: TJ TSTG : MJD31 : MJD31C : MJD31 : MJD31C Units 40 100 40 100 5 3 5 1 15 1.56 , * Collector-Emitter Sustaining Voltage : MJD31 : MJD31C Collector Cut-off Current : MJD31 : MJD31C Collector Cut-off Current : MJD31 : MJD31C Emitter Cut-off Current * DC Current Gain IC = 30mA, IB = 0 IC = , Corporation MJD31/31C Rev. A3 1 MJD31C 1 IC(max) MJD31 tSTG s 0 10 s 0 50 IC[A , MJD31/31C NPN Epitaxial Silicon Transistor Features · · · · · General Purpose Amplifier ... | Original |
5 pages, |
TIP31C TIP31 MJD31C MJD31 MJD31/31C MJD31/31C abstract |
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| Abstract: 1 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : MJD31 : MJD31C Collector Emitter Voltage : MJD31 : MJD31C Emitter Base Voltage Collector Current (DC) Collector Current (Pulse , CHARACTERISTICS (TC =25°C) Characteristic Symbol Collector Emitter Sustaining Voltage : MJD31 : MJD31C : MJD31 Collector Cutoff Current : MJD31C : MJD31 Collector Cutoff Current : MJD31C Emitter Cutoff , MJD31/31C NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING ... | Original |
4 pages, |
TIP31C TIP31 MJD31C MJD31 MJD31/31C MJD31/31C abstract |
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| Abstract: RATINGS Characteristic Symbol Rating Unit Collector Base Voltage : MJD31 cbo : MJD31C 100 V ceo : MJD31C 100 V ebo Collector Current (DC) C 3 A Base Current C b 1 A c ° ) P a ° ) c 1.56 W J , 30mA, lB= 0 40 V : MJD31C 100 V Collector Cutoff Current : MJD31 IcEO Vce = 40V, lB=0 50 HA : MJD31C Vce = 60V, lB=0 50 HA Collector Cutoff Current : MJD31 Ices Vce = 40V, Vbe = 0 20 HA : MJD31C , MJD31/31C NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING ... | OCR Scan |
4 pages, |
TIP31 MJD31C MJD31 QS 100 NPN Transistor MJD31/31C MJD31/31C abstract |
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| Abstract: °C °C VCEO VEBO IC ICP IB PC TJ TSTG Ordering Information Part Number MJD31CTF MJD31CITU Marking MJD31C MJD31C-I Package D-PAK I-PAK Packing Method Tape & Reel Tube Remarks © 2012 , Symbol VCBO Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage : MJD31 : MJD31C Collector-Emitter Voltage : MJD31 : MJD31C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse , noted Parameter * Collector-Emitter Sustaining Voltage : MJD31 : MJD31C Collector Cut-off Current ... | Original |
6 pages, |
MJD31/31C MJD31/31C abstract |
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| Abstract: VCBO Value Units : MJD31 : MJD31C VCEO Parameter 40 100 V V Collector-Emitter , Parameter * Collector-Emitter Sustaining Voltage : MJD31 : MJD31C Test Condition IC = 30mA, IB = 0 Min. Max. 40 100 Units V V Collector Cut-off Current : MJD31 : MJD31C 50 50 uA uA : MJD31 : MJD31C ICES VCE = 40V, IB = 0 VCE = 60V, IB = 0 VCE = 40V, VBE = 0 VCE = , MJD31/31C MJD31/31C General Purpose Amplifier Low Speed Switching Applications · Load Formed ... | Original |
5 pages, |
TIP31C TIP31 MJD31C MJD31 MJD31/31C MJD31/31C abstract |
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| Abstract: VCBO Value Units : MJD31 : MJD31C VCEO Parameter 40 100 V V Collector-Emitter , Parameter * Collector-Emitter Sustaining Voltage : MJD31 : MJD31C Test Condition IC = 30mA, IB = 0 Min. Max. 40 100 Units V V Collector Cut-off Current : MJD31 : MJD31C 50 50 uA uA : MJD31 : MJD31C ICES VCE = 40V, IB = 0 VCE = 60V, IB = 0 VCE = 40V, VBE = 0 VCE = , MJD31/31C MJD31/31C General Purpose Amplifier Low Speed Switching Applications · Load Formed ... | Original |
5 pages, |
TIP31C TIP31 MJD31C MJD31 MJD31/31C MJD31/31C abstract |
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| Abstract: MJD31, MJD31C (NPN), MJD32 MJD32, MJD32C MJD32C (PNP) MJD31C and MJD32C MJD32C are Preferred Devices Complementary , Emitter-Base Voltage 4 40 100 Vdc 40 100 MJD31, MJD32 MJD32 MJD31C, MJD32C MJD32C YWW J3xxG Unit VCEO MJD31, MJD32 MJD32 MJD31C, MJD32C MJD32C Collector-Base Voltage Max YWW J3xxG 1 2 VEB 5 , ) Collector-Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) MJD31, MJD32 MJD32 MJD31C, MJD32C MJD32C MJD31 , ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) MJD31, MJD31C (NPN), MJD32 MJD32, MJD32C MJD32C (PNP ... | Original |
8 pages, |
TIP32 TIP31 MJD32C MJD32 MJD31CG MJD31C MJD31 369D MJD31 abstract |
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| Abstract: Popuiar TIP31 TIP31 and TIP32 TIP32 Series MAXIMUM RATINGS Rating Symbol MJD31 MJD32 MJD32 MJD31C MJD32C MJD32C Unit , 0) MJD31, MJD32 MJD32 MJD31C, MJD32C MJD32C VCEO(sus) 40 100 - Vdo Collector Cutoff Current (Vqe - 40 Vdo, Ib - 0) MJD31, MJD32 MJD32 , 150°C MJD31, MJD32 MJD32: MJD31C, MJD32C MJD32C : I I I II_I-I_ 1.5 2 3 5 7 10 20 30 50 70 100 150 VCE , Motorola recommended choices for future usa and best overall value. NPN MJD31,C* PNP MJD32 MJD32,C* 'Motorola ... | OCR Scan |
4 pages, |
TIP32 ic 3542 MJD31 MJD31C MJD32 MJD32C MOTOROLA POWER TRANSISTOR MSD6100 TIP31 1N5825 3543 TIP31 abstract |
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| *MJD31/MJD31C NPN EPITAXIAL SILICON TRANSISTOR ELECTRICAL PARAMETERS TIP31C TIP31C TIP31C TIP31C * Vcbo & Vceo: MJD31(40V) / MJD31C(100V) *- * MODEL PARAMETERS FROM MEASURED DATA: MJD31C *- .MODEL MJD31/31C NPN + LEVEL = 1 + IS = 1.62181E-13 62181E-13 62181E-13 62181E-13 + NF = 0.9899 + ISE = 1.75416E-11 75416E-11 75416E-11 75416E-11 * - * FAIRCHILD PUCHON S.KOREA CASE: I-PAK & D-PAK PID: MJD31/MJD31C * MAR-07-2001 MAR-07-2001 MAR-07-2001 MAR-07-2001 CREATION www.datasheetarchive.com/files/fairchild/pdfs/models actual/mjd31.mod |
Fairchild | 22/08/2003 | 1.33 Kb | MOD | mjd31.mod |
| *MJD31/MJD31C NPN EPITAXIAL SILICON TRANSISTOR ELECTRICAL PARAMETERS TIP31C TIP31C TIP31C TIP31C * Vcbo & Vceo: MJD31(40V) / MJD31C(100V) *- * MODEL PARAMETERS FROM MEASURED DATA: MJD31C *- .MODEL MJD31/31C NPN + LEVEL = 1 + IS = 1.62181E-13 62181E-13 62181E-13 62181E-13 + NF = 0.9899 + ISE = 1.75416E-11 75416E-11 75416E-11 75416E-11 * - * FAIRCHILD PUCHON S.KOREA CASE: I-PAK & D-PAK PID: MJD31/MJD31C * MAR-07-2001 MAR-07-2001 MAR-07-2001 MAR-07-2001 CREATION www.datasheetarchive.com/files/fairchild/pdfs/models/mjd31.txt |
Fairchild | 22/08/2003 | 1.33 Kb | TXT | mjd31.txt |
| *MJD31/MJD31C NPN EPITAXIAL SILICON TRANSISTOR ELECTRICAL PARAMETERS TIP31C TIP31C TIP31C TIP31C * Vcbo & Vceo: MJD31(40V) / MJD31C(100V) *- * MODEL PARAMETERS FROM MEASURED DATA: MJD31C *- .MODEL MJD31/31C NPN + LEVEL = 1 + IS = 1.62181E-13 62181E-13 62181E-13 62181E-13 + NF = 0.9899 + ISE = 1.75416E-11 75416E-11 75416E-11 75416E-11 * - * FAIRCHILD CASE: I-PAK & D-PAK PID: MJD31/MJD31C * MAR-07-2001 MAR-07-2001 MAR-07-2001 MAR-07-2001 CREATION www.datasheetarchive.com/files/fairchild/simulation-models/mjd31.lib |
Fairchild | 22/10/2012 | 1.31 Kb | LIB | mjd31.lib |
| ST | COMPLEMENTARY SILICON POWER TRANSISTORS MJD31B MJD31C MJD32B MJD32B MJD32B MJD32B MJD32C MJD32C MJD32C MJD32C COMPLEMENTARY SILICON POWER TRANSISTORS Document Number: 3543 Date Update: 06/05/99 Pages: 5 The document is available in the following formats: Portable Document Format and Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/3543-v2.htm |
STMicroelectronics | 14/06/1999 | 0.87 Kb | HTM | 3543-v2.htm |
| ST | COMPLEMENTARY SILICON POWER TRANSISTORS MJD31B MJD31C MJD32B MJD32B MJD32B MJD32B MJD32C MJD32C MJD32C MJD32C COMPLEMENTARY SILICON POWER TRANSISTORS Document Number: 3543 Date Update: 30/09/97 Pages: 5 The document is available in the following formats: Portable Document Format and Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/3543-v1.htm |
STMicroelectronics | 31/03/1999 | 0.92 Kb | HTM | 3543-v1.htm |
| SGS-THOMSON | COMPLEMENTARY SILICON POWER TRANSISTORS MJD31B MJD31C MJD32B MJD32B MJD32B MJD32B MJD32C MJD32C MJD32C MJD32C COMPLEMENTARY SILICON POWER TRANSISTORS Document Number: 3543 Date Update: 30/09/97 Pages: 5 The document is available in the following formats: Portable Document Format and Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/3543.htm |
STMicroelectronics | 06/02/1998 | 0.94 Kb | HTM | 3543.htm |
| ST | COMPLEMENTARY SILICON POWER TRANSISTORS Datasheet COMPLEMENTARY SILICON POWER TRANSISTORS MJD31B MJD31C MJD32B MJD32B MJD32B MJD32B MJD32C MJD32C MJD32C MJD32C Document Format Size Document Number Date Update Pages Portable Document Format 3543 06/05/1999 5 Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/3543-v4.htm |
STMicroelectronics | 25/05/2000 | 2.81 Kb | HTM | 3543-v4.htm |
| ST | COMPLEMENTARY SILICON POWER TRANSISTORS Datasheet COMPLEMENTARY SILICON POWER TRANSISTORS MJD31B MJD31C MJD32B MJD32B MJD32B MJD32B MJD32C MJD32C MJD32C MJD32C Document Format Size Document Number Date Update Pages Portable Document Format 3543 06/05/1999 5 Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/stonline/books/all/3543-v3.htm |
STMicroelectronics | 20/10/2000 | 2.86 Kb | HTM | 3543-v3.htm |
| element component template mjd31t4 c b e #* # Model Generated by MODPEX * #Copyright(c) Symmetry Design Systems* # All Rights Reserved * # UNPUBLISHED LICENSED SOFTWARE * # Contains Proprietary Information * # Which is The Property of * # SYMMETRY OR ITS LICENSORS * # Modeling services provided by * # Interface Technologies www.i-t.com * #* # MODPEX model for BJT transistor mjd31t4 # Model generated on Dec 17, 2003 electrical c,b,e { # BODY www.datasheetarchive.com/files/on_semiconductor/simulation-models/mjd31t4.sin |
On Semiconductor | 30/03/2009 | 1.13 Kb | SIN | mjd31t4.sin |
| COMPLEMENTARY SILICON POWER TRANSISTORS MJD31B MJD31C MJD32B MJD32B MJD32B MJD32B MJD32C MJD32C MJD32C MJD32C Document Format 3543 06/05/1999 5 Raw Text Format MJD31B/31C MJD32B MJD32B MJD32B MJD32B The MJD31B and MJD31C and the MJD32B MJD32B MJD32B MJD32B and MJD32C MJD32C MJD32C MJD32C form complementary NPN-PNP pairs. They are Unit NPN MJD31B MJD31C PNP MJD32B MJD32B MJD32B MJD32B MJD32C MJD32C MJD32C MJD32C V CBO Collector-Base Voltage (I E = 0) 80 100 V V CEO ) V EB = 5 V 0.1 mA V CEO(sus) Collector-Emitter Sustaining Voltage I C = 30 mA for MJD31B www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3543.htm |
STMicroelectronics | 20/10/2000 | 7.15 Kb | HTM | 3543.htm |
| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| MJD31 | N/A | Transistor | |
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| MJD31 | N/A | Power, General Purpose | |
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| MJD31-1 | N/A | Power, General Purpose | |
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| MJD31BT4 | ST Microelectronics | Si NPN Power BJT | |
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| MJD31C | N/A | Transistor | |
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| MJD31C | N/A | Power, General Purpose | |
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| MJD31C1 | Motorola | Si NPN Power BJT | |
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| MJD31C-1 | N/A | Power, General Purpose | |
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| MJD31CT4 | N/A | Power, General Purpose | |
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| MJD31T4 | N/A | Power, General Purpose | |
| Central Part | Industry Part | Type | Description |
| CJD31C Buy | MJD31C Buy | Exact electrical and mechanical. | SMD Bipolar Power Transistor NPN General Purpose Amplifier/Switch |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| KSH29C | KSH29C Buy | MJD31CT4 Buy | STMicroelectronics | Close | PowerBJT | NPN Epitaxial Silicon Transistor |
| KSH31C | KSH31C Buy | MJD31BT4 Buy | STMicroelectronics | Close | PowerBJT | NPN Epitaxial Silicon Transistor |
| KSH31C | KSH31C Buy | MJD31C Buy | Fairchild | Direct | PowerBJT | NPN Epitaxial Silicon Transistor |
| Infineon (Siemens) Part | Status | Industry Part | Manufacturer | Description |
| BDP947E6327 Buy | MJD31T4 Buy | On Semiconductor | ||
| BDP953E6327 Buy | MJD31C Buy | Fairchild Semiconductor |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
| MJD243T4 Buy | MJD31CT4 Buy | STMicroelectronics | Direct |
| MJD2955G Buy | MJD31C Buy | STMicroelectronics | Direct |
| MJD31C Buy | 2SC2873 Buy | Various | Direct |
| MJD31C Buy | 2SC2882 Buy | Various | Direct |
| MJD31C Buy | 2SC3076 Buy | Various | Direct |
| MJD31C Buy | MJD29C Buy | Various | Direct |
| MJD31C1G Buy | 2SC4134 Buy | Various | Direct |
| MJD31C1G Buy | 2SC4135 Buy | Various | Direct |
| MJD31C1G Buy | 2SD1815 Buy | Sanyo | Close |
| MJD31C1G Buy | 2SD1815Q Buy | Sanyo | Close |
| STMicroelectronics Part | Industry Part | Manufacturer | Type | Description |
| MJD31BT4 Buy | KSD1221 Buy | Fairchild Semiconductor | Nearest Preferred | Power Bipolar - Low Voltage ( < 160 V) General Purpose |
| MJD31BT4 Buy | KSH200 Buy | Fairchild Semiconductor | Nearest Preferred | Power Bipolar - Low Voltage ( < 160 V) General Purpose |
| MJD31BT4 Buy | KSH29 Buy | Fairchild Semiconductor | Nearest Preferred | Power Bipolar - Low Voltage ( < 160 V) General Purpose |
| MJD31BT4 Buy | MJD31 Buy | On Semiconductor | Replacement | Power Bipolar - Low Voltage ( < 160 V) General Purpose |
| MJD31CT4 Buy | KSH29C Buy | Fairchild Semiconductor | Nearest Preferred | Power Bipolar - Low Voltage ( < 160 V) General Purpose |
| MJD31CT4 Buy | KSH31 Buy | Fairchild Semiconductor | Nearest Preferred | Power Bipolar - Low Voltage ( < 160 V) General Purpose |
| MJD31CT4 Buy | KSH31C Buy | Fairchild Semiconductor | Nearest Preferred | Power Bipolar - Low Voltage ( < 160 V) General Purpose |
| MJD31CT4 Buy | MJD243T4 Buy | On Semiconductor | Nearest Preferred | Power Bipolar - Low Voltage ( < 160 V) General Purpose |
| Part | Similar Part | Notes |