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MJD31/31C

Catalog Datasheet MFG & Type PDF Document Tags

tip31c fairchild

Abstract: transistor 31C MJD31/31C NPN Epitaxial Silicon Transistor Features · · · · · General Purpose Amplifier , Current Gain Bandwidth Product * Pulse Test: PW300s, Duty Cycle2% MJD31/31C Rev. A3 Min. 20 20 1 A A mA 25 10 3 50 1.2 1.8 V V MHz www.fairchildsemi.com 1 MJD31/31C , Corporation MJD31/31C Rev. A3 1 MJD31C 1 IC(max) MJD31 tSTG s 0 10 s 0 50 IC[A , 2 MJD31/31C - NPN Epitaxial Silicon Transistor Typical Performance Characteristics MJD31
Fairchild Semiconductor
Original
TIP31 TIP31C tip31c fairchild transistor 31C IPAK MJD31/31C
Abstract: MJD31/31C NPN Epitaxial Silicon Transistor Features â'¢ â'¢ â'¢ â'¢ â'¢ General Purpose , © 2012 Fairchild Semiconductor Corporation MJD31/31C Rev. A4 Remarks www.fairchildsemi.com 1 MJD31/31C â'" NPN Epitaxial Silicon Transistor February 2012 Ta = 25°C unless otherwise , MJD31/31C Rev. A4 www.fairchildsemi.com 2 MJD31/31C â'" NPN Epitaxial Silicon Transistor , /31C Rev. A4 1 MJD31C 1 IC(max) MJD31 tSTG s 0μ 10 s 0μ 50 IC[A Fairchild Semiconductor
Original
MJD31CTF MJD31C-I
Abstract: MJD31/31C - NPN Epitaxial Silicon Transistor February 2012 MJD31/31C NPN Epitaxial Silicon , Fairchild Semiconductor Corporation MJD31/31C Rev. A4 1 www.fairchildsemi.com MJD31/31C - NPN , % © 2012 Fairchild Semiconductor Corporation MJD31/31C Rev. A4 2 www.fairchildsemi.com MJD31/31C - , Operating © 2012 Fairchild Semiconductor Corporation MJD31/31C Rev. A4 3 MJD31 MJD31C www.fairchildsemi.com MJD31/31C - NPN Epitaxial Silicon Transistor Typical Performance Characteristics Fairchild Semiconductor
Original
Abstract: MJD31/31C MJD31/31C General Purpose Amplifier Low Speed Switching Applications · Load Formed , Cycle2% ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD31/31C Typical , 31 Rev. A2, June 2001 MJD31/31C Typical Characteristics (Continued) 20 PC[W], POWER , Figure 7. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD31/31C , Collector-Base Voltage : MJD31 : MJD31C VCEO Collector-Emitter Voltage : MJDH31 : MJD31C Emitter-Base Voltage Fairchild Semiconductor
Original
MJD31TF

MJD31

Abstract: MJD31/31C MJD31/31C General Purpose Amplifier Low Speed Switching Applications · Load Formed , Cycle2% ©2000 Fairchild Semiconductor International Rev. A. February 2000 MJD31/31C Typical Characteristics ©2000 Fairchild Semiconductor International Rev. A. February 2000 MJD31/31C Typical Characteristics (continued) ©2000 Fairchild Semiconductor International Rev. A. February 2000 MJD31/31C , : MJD31 : MJD31C VCEO Collector-Emitter Voltage : MJD31 : MJD31C Emitter-Base Voltage Collector Current
Fairchild Semiconductor
Original

MJD31

Abstract: MJD31C MJD31/31C MJD31/31C General Purpose Amplifier Low Speed Switching Applications · Load Formed , . A2, June 2001 MJD31/31C VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics , . A2, June 2001 MJD31/31C Typical Characteristics (Continued) PC[W], POWER DISSIPATION 20 , Figure 7. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD31/31C , VCBO Value Units : MJD31 : MJD31C VCEO Parameter 40 100 V V Collector-Emitter
Fairchild Semiconductor
Original

MJD31

Abstract: MJD31C MJD31/31C MJD31/31C General Purpose Amplifier Low Speed Switching Applications · Load Formed , . A1, February 2001 MJD31/31C VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical , . A1, February 2001 MJD31/31C Typical Characteristics (Continued) PC[W], POWER DISSIPATION , MJD31/31C Package Demensions D-PAK 2.30 ±0.10 MIN0.55 0.91 ±0.10 9.50 ±0.30 0.50 , VCBO Value Units : MJD31 : MJD31C VCEO Parameter 40 100 V V Collector-Emitter
Fairchild Semiconductor
Original
tip31c application

NPN transistor tip31c

Abstract: marking MJD MJD31/31C MJD31/31C General Purpose Amplifier Low Speed Switching Applications · Load Formed , Cycle2% ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD31/31C Typical , 31 Rev. A2, June 2001 MJD31/31C Typical Characteristics (Continued) 20 PC[W], POWER , Figure 7. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD31/31C , Collector-Base Voltage : MJD31 : MJD31C VCEO Collector-Emitter Voltage : MJDH31 : MJD31C Emitter-Base Voltage
Fairchild Semiconductor
Original
NPN transistor tip31c marking MJD 31C-I SBDD001A

QS 100 NPN Transistor

Abstract: MJD31 MJD31/31C NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING , Manufacturer MJD31/31C NPN EPITAXIAL SILICON TRANSISTOR SC CWWSfW SMN O.Q-t O OS â T'.or, 01 :i ? r.i.t fc , SEMICONDUCTOR tm This Material Copyrighted By Its Respective Manufacturer MJD31/31C NPN EPITAXIAL SILICON , RATINGS Characteristic Symbol Rating Unit Collector Base Voltage : MJD31 cbo : MJD31C 100 V ceo , ) Characteristic Symbol Test Conditions Min Max Unit Collector Emitter Sustaining Voltage : MJD31 Vceo (sus) lc
-
OCR Scan
QS 100 NPN Transistor

MJD31

Abstract: MJD31C MJD31/31C NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING , . B ©1999 Fairchild Semiconductor Corporation MJD31/31C NPN EPITAXIAL SILICON TRANSISTOR MJD31/31C NPN EPITAXIAL SILICON TRANSISTOR TRADEMARKS The following are registered and , 1 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : MJD31 : MJD31C Collector Emitter Voltage : MJD31 : MJD31C Emitter Base Voltage Collector Current (DC) Collector Current (Pulse
Fairchild Semiconductor
Original

transistor tip 31c

Abstract: tip 31c MJD31/31C NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING , MJD31/31C NPN EPITAXIAL SILICON TRANSISTOR ec eesssmr B A W « W fT fe ft S *t»IW T fO »» , E M IC O N D U C T O R -M T O R I* O F F T IM E MJD31/31C NPN EPITAXIAL SILICON TRANSISTOR , Straight Lead (I.ACK, I" Suffix) · Electrically S im ila r to Popular TIP31 and TIP 31C D-PAK 1 , . E m itter Rating Unit l-PAK Sym bol CBO : MJD31 100 100 EBO V V A A W C 1. Base 2. C
-
OCR Scan
transistor tip 31c tip 31c
Abstract: MJD31/31C NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING , urrent Min tm 3 V V MHz MJD31/31C NPN EPITAXIAL SILICON TRANSISTOR tfWftTBK SA , SEM IC O N D U C TO R t m S A f E Q P £ fiA f IMG A R E A MJD31/31C NPN EPITAXIAL , TIP 31C ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage 1. Base 2. C ollector 3. E m itter Sym bol Unit 100 V 100 : MJD31 Rating V 3 A 1 A -
OCR Scan
JD31C
Abstract: r z 7 SCS-THOM SON ii«IM)ILI(gTOißigS MJD31 B/3t C MJD32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . SURFACE-MOUNTING TO-252 (DPAK) POW ER PACKAGE IN TAPE & REEL (SUFFIX "T4") . ELECTRICAL SIMILAR TO TIP31B/C AND TIP32B/C APPLICATIONS . G ENERAL PURPOSE SWITCHING AND , °C Unit April 1997 611 MJD31B/31C - MJD32B/32C THERMAL DATA Rthjcase Rthi amb Therm al R , ·7 # W f f i B K I M i C I 612 MJD31B/31C - MJD32B/32C DC Current Gain (NPN type) DC Current -
OCR Scan
MJD31B MJD32B MJD32C MJD31B/32B MJD31C/32C MJD31B/31C

MJD31

Abstract: voltage marking c32 COMPLEMENTARY PLASTIC POWER TRANSISTORS MJD31, C NPN MJD32, C PNP DPAK (TO-252) Plastic Package , Purposes SYMBOL VCEO VCBO VEBO IC ICP IB MJD31C/MJD32C MJD31/MJD32 100 100 40 40 , TEST CONDITION MIN TYP VCEO IC=1mA, IB=0 Collector Emitter Voltage MJD31/MJD32 40 MJD31C/MJD32C 100 ICEO VCE=40V, IB=0 MJD31/MJD32 Collector Cut Off Current VCE=60V, IB=0 MJD31C/MJD32C , V IC=3A, VCE=4V 1.8 V MJD31/C_32/C Rev260505E Continental Device India Limited Data
Continental Device India
Original
voltage marking c32 marking code XY marking CODE MX MJD31/MJD32 C-120 MJD31/C 260505E

J32C

Abstract: J31C Product specification MJD31,MJD31C(NPN) MJD32,MJD32C(PNP) TO-252 6.50 +0.2 5.30-0.2 , Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Symbol MJD31,MJD32 MJD31 , 1 of 2 Product specification MJD31,MJD31C(NPN) MJD32,MJD32C(PNP) Electrical Characteristics Ta = 25 Parameter Symbol Collector-emitter sustaining voltage MJD31,MJD32 Testconditons Min Max Unit MJD31,MJD32 V 100 VCEo(sus) IC = 30 mA, IB = 0 MJD31C,MJD32C
TY Semiconductor
Original
J32C J31C

NPN Silicon Power Transistor DPAK

Abstract: dpak 369C MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) MJD31C and MJD32C are Preferred Devices Complementary , Collector Current - Continuous - Peak Vdc 40 100 MJD31, MJD32 MJD31C, MJD32C YWW J3xx Vdc VCB Emitter-Base Voltage 3 40 100 MJD31, MJD32 MJD31C, MJD32C Collector-Base Voltage , Industries, LLC, 2004 December, 2004 - Rev. 5 1 Publication Order Number: MJD31/D 2 http , Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) MJD31, MJD32 MJD31C, MJD32C MJD31, MJD32 MJD31C
ON Semiconductor
Original
TIP32 NPN Silicon Power Transistor DPAK dpak 369C TIP31 NPN Transistor diagram MJD32RLG MJD32C-1 1N5825 MJD31/D

MJD32C

Abstract: TIP31 NPN Transistor diagram MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors DPAK For Surface Mount , Rating Symbol Collector-Emitter Voltage VCEO MJD31, MJD32 MJD31C, MJD32C Collector-Base Voltage VCB MJD31, MJD32 MJD31C, MJD32C Emitter-Base Voltage Max 3 YWW J3xxG DPAK , , 2010 - Rev. 7 1 Publication Order Number: MJD31/D 2 http://onsemi.com , Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) MJD31, MJD32 MJD31C, MJD32C MJD31, MJD32 MJD31C
ON Semiconductor
Original
369D data base dpak

mjd31c

Abstract: MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG , Publication Order Number: MJD31/D MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G , Collectorâ'Emitter Voltage MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G MJD31C, NJVMJD31CG, NJVMJD31CRLG, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G VCEO Collectorâ'Base Voltage MJD31, NJVMJD31T4G, MJD32 , MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G
ON Semiconductor
Original
Abstract: MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG , Publication Order Number: MJD31/D MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) MAXIMUM RATINGS Rating Collector-Emitter Voltage MJD31 , MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G MJD31C, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G , 80 260 Unit °C/W °C/W °C http://onsemi.com 2 MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN ON Semiconductor
Original
AEC-Q101

J32C

Abstract: J31C Transistors SMD Type Complementary Power Transistors MJD31,MJD31C(NPN) MJD32,MJD32C(PNP , Symbol MJD31,MJD32 MJD31,MJD32 Unit VCB MJD31C,MJD32C 40 V 100 VCEO MJD31C , SMD Type MJD31,MJD31C(NPN) MJD32,MJD32C(PNP) Electrical Characteristics Ta = 25 Parameter Symbol Collector-emitter sustaining voltage MJD31,MJD32 Testconditons Typ Max Unit 40 , ICEO VCE = 40 V, IB = 0 50 ìA VCE = 60 V, IB = 0 MJD31,MJD32 MJD31C,MJD32C 50 ìA
Kexin
Original
J31C TO-252 smd j31c J31C ON J31C smd j32-C smd j32c
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