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Part : MJD200G Supplier : ON Semiconductor Manufacturer : Avnet Stock : 10,706 Best Price : $0.2019 Price Each : $0.5219
Part : MJD200G Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.1569 Price Each : $0.1806
Part : MJD200RLG Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.1889 Price Each : $0.2389
Part : MJD200RLG Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.1773 Price Each : $0.2040
Part : MJD200RLG Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : €0.2069 Price Each : €0.2929
Part : MJD200T4G Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.1419 Price Each : $0.1639
Part : MJD200T4G Supplier : ON Semiconductor Manufacturer : Avnet Stock : - Best Price : $0.1845 Price Each : $0.2123
Part : MJD200G. Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : 10,706 Best Price : $0.1780 Price Each : $0.58
Part : MJD200RLG Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : 1,804 Best Price : $0.3220 Price Each : $0.60
Part : MJD200T4G Supplier : ON Semiconductor Manufacturer : Newark element14 Stock : 1,721 Best Price : $0.2150 Price Each : $0.55
Part : MJD200G Supplier : ON Semiconductor Manufacturer : Allied Electronics & Automation Stock : - Best Price : $0.6270 Price Each : $0.6530
Part : MJD200G Supplier : ON Semiconductor Manufacturer : Future Electronics Stock : 2,700 Best Price : $0.1820 Price Each : $0.23
Part : MJD200RLG Supplier : ON Semiconductor Manufacturer : Future Electronics Stock : - Best Price : $0.1950 Price Each : $0.2450
Part : MJD200T4G Supplier : ON Semiconductor Manufacturer : Future Electronics Stock : - Best Price : $0.29 Price Each : $0.34
Part : MJD200T4G Supplier : ON Semiconductor Manufacturer : Future Electronics Stock : - Best Price : $0.1750 Price Each : $0.22
Part : MJD200G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 8,157 Best Price : $0.27 Price Each : $0.27
Part : MJD200RLG Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 12,495 Best Price : $0.31 Price Each : $0.31
Part : MJD200T4 Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 2,500 Best Price : $0.34 Price Each : $0.34
Part : MJD200T4G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 33,300 Best Price : $0.31 Price Each : $0.31
Part : SMJD200G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 205 Best Price : - Price Each : -
Part : MJD200RL Supplier : Motorola Manufacturer : America II Electronics Stock : 1,211 Best Price : - Price Each : -
Part : MJD200 Supplier : ON Semiconductor Manufacturer : Bristol Electronics Stock : 706 Best Price : - Price Each : -
Part : MJD200G Supplier : ON Semiconductor Manufacturer : Bristol Electronics Stock : 88 Best Price : - Price Each : -
Part : MJD200RL Supplier : ON Semiconductor Manufacturer : Bristol Electronics Stock : 1,249 Best Price : - Price Each : -
Part : MJD200RL Supplier : ON Semiconductor Manufacturer : Bristol Electronics Stock : 1,001 Best Price : - Price Each : -
Part : MJD200RL Supplier : Motorola Manufacturer : Bristol Electronics Stock : 320 Best Price : $0.1828 Price Each : $0.4875
Part : MJD200T4 Supplier : ON Semiconductor Manufacturer : Bristol Electronics Stock : 211 Best Price : - Price Each : -
Part : MJD200T4 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 1,695 Best Price : $0.1365 Price Each : $0.4875
Part : MJD200G Supplier : ON Semiconductor Manufacturer : RS Components Stock : 195 Best Price : £0.2020 Price Each : £0.2830
Part : MJD200T4 Supplier : ON Semiconductor Manufacturer : Chip One Exchange Stock : 1,976 Best Price : - Price Each : -
Part : MJD200G Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 37 Best Price : $0.3279 Price Each : $0.3279
Part : MJD200T4G Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 5,000 Best Price : $0.1802 Price Each : $0.1802
Part : MJD200T4G Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 5,815 Best Price : $0.3929 Price Each : $0.3929
Part : MJD200T4G Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 1,721 Best Price : $0.20 Price Each : $0.5580
Part : MJD200T4G Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : - Best Price : $0.24 Price Each : $0.3680
Part : MJD200T4G Supplier : ON Semiconductor Manufacturer : element14 Asia-Pacific Stock : 1,721 Best Price : $0.20 Price Each : $0.5580
Part : MJD200T4G Supplier : ON Semiconductor Manufacturer : Farnell element14 Stock : 1,721 Best Price : £0.15 Price Each : £0.3440
Part : MJD200G Supplier : ON SEMICONDUCTOR Manufacturer : New Advantage Stock : 2,550 Best Price : $0.3538 Price Each : $0.3833
Part : MJD200T4G Supplier : ON SEMICONDUCTOR Manufacturer : New Advantage Stock : 2,500 Best Price : $0.2217 Price Each : $0.2217
Part : MJD200RLG Supplier : ON Semiconductor Manufacturer : Wuhan P&S Stock : 1 Best Price : $0.24 Price Each : $0.37
Part : MJD200T4G Supplier : ON Semiconductor Manufacturer : Wuhan P&S Stock : 2,850 Best Price : $0.22 Price Each : $0.34
Shipping cost not included. Currency conversions are estimated. 

MJD200 Datasheet

Part Manufacturer Description PDF Type
MJD200 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original
MJD200 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
MJD200 Motorola SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS Original
MJD200 On Semiconductor Complementary Plastic Power Transistors Original
MJD200 On Semiconductor Complementary Plastic Power Transistors Original
MJD200 On Semiconductor Complementary Plastic Power Transistor Original
MJD200 On Semiconductor MJD200 - TRANSISTOR 5 A, 25 V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369A, DPAK-3, BIP General Purpose Power Original
MJD200 STMicroelectronics COMPLEMENTARY SILICON POWER TRANSISTORS Original
MJD200 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan
MJD200 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
MJD200 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
MJD200 N/A Shortform Data and Cross References (Misc Datasheets) Scan
MJD200-1 Motorola SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS Original
MJD200-1 On Semiconductor MJD200 - TRANSISTOR 5 A, 25 V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369-07, 3 PIN, BIP General Purpose Power Original
MJD200-1 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
MJD200-1 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
MJD200-1 N/A Shortform Data and Cross References (Misc Datasheets) Scan
MJD200-D On Semiconductor Complementary Plastic Power Transistors NPN-PNP Si Original
MJD200G On Semiconductor Bipolar Power DPAK NPN 5A 25V Original
MJD200G On Semiconductor MJD200 - TRANSISTOR 5 A, 25 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, PLASTIC, CASE 369A, DPAK-3, BIP General Purpose Power Original
Showing first 20 results.

MJD200

Catalog Datasheet MFG & Type PDF Document Tags

PNP 2A DPAK

Abstract: MJD200 =2% MJD200_210 Rev180505E Continental Device India Limited UNIT V nA nA nA Data Sheet Page 1 , MJD200_210 Rev180505E Continental Device India Limited Data Sheet Page 2 of 5 UNIT MHz pF pF MJD200 NPN MJD210 PNP DPAK (TO-252) Plastic Package MJD200_210 Rev180505E Continental , Package MJD200_210 Rev180505E Continental Device India Limited Data Sheet Page 4 of 5 , email@cdil.com www.cdilsemi.com MJD200_210 Rev180505E Continental Device India Limited Data Sheet Page 5
Continental Device India
Original
PNP 2A DPAK C-120 180505E

PNP Transistor DPAK

Abstract: = 10 Vdc, IE = 0, f = 0.1 MHz) fT 65 - - - MHz pF MJD200 MJD210 Cob 80 120 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%. 3. fT = hfe· ftest. http://onsemi.com 432 MJD200 (NPN) MJD210 (PNP) ORDERING INFORMATION Device MJD200 MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G MJD210 , MJD200 (NPN) MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface , - Rev. 5 Publication Order Number: MJD200/D MJD200 (NPN) MJD210 (PNP) MAXIMUM RATINGS
ON Semiconductor
Original
PNP Transistor DPAK MJD200/D

1N5825

Abstract: MJD200 breakdown. Case 369 may be ordered by adding a "­1" suffix to the device title (i.e. MJD200­1) 5ms TJ , ON Semiconductort NPN Complementary Plastic Power Transistors MJD200 PNP MJD210 NPN , inches mm Publication Order Number: MJD200/D 2 http://onsemi.com *When surface mounted on , ) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD200 MJD210 Collector­Emitter Saturation , Ambient* Characteristic THERMAL CHARACTERISTICS MJD200 MJD210 MJD200 MJD210 2 1.5 TC
ON Semiconductor
Original
1N5825 MSD6100
Abstract: ://onsemi.com 5 MJD200 (NPN), MJD210 (PNP) ORDERING INFORMATION Device MJD200G MJD200RLG MJD200T4G , MJD200 (NPN), MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For , , 2013 1 September, 2013 - Rev. 13 Publication Order Number: MJD200/D MJD200 (NPN), MJD210 , , ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD200 MJD210, NJVMJD210T4G 3 , MJD200 (NPN), MJD210 (PNP) TA 2.5 PD, POWER DISSIPATION (WATTS) TC 25 25 ms +11 V 1.5 15 TA (SURFACE ON Semiconductor
Original
AEC-Q101
Abstract: MJD200 MJD200 D-PAK for Surface Mount Applications · · · · High DC Current Gain Built-in a , Corporation Rev. A2, June 2001 MJD200 Typical Characteristics VCE(sat), VBE(sat) [V], SATURATION , Operating Area ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD200 Typical , Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD200 Package Demensions D-PAK 6.60 , Production ©2001 Fairchild Semiconductor Corporation Rev. H3 Product Folder - Fairchild P/N MJD200 Fairchild Semiconductor
Original
PW300 MJD200TF

MJD200

Abstract: MJD200G INFORMATION Package Type Shipping MJD200G DPAK (Pb-Free) 75 Units / Rail MJD200RLG DPAK , MJD200 (NPN) MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For , Components Industries, LLC, 2011 January, 2011 - Rev. 10 1 Publication Order Number: MJD200/D MJD200 (NPN) MJD210 (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal , , VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD200
ON Semiconductor
Original
MJD210G MJD210RLG MJD210T4

MJD200RL

Abstract: 1N5825 & Reel Device MJD200 MJD200RLG MJD200T4 MJD200T4G MJD210 DPAK 75 Units / Rail , 75 Units / Rail MJD200G DPAK (Pb-Free) 75 Units / Rail MJD200RL DPAK 1800 Tape & , MJD200 (NPN) MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For , the package dimensions section on page 6 of this data sheet. Publication Order Number: MJD200/D MJD200 (NPN) MJD210 (PNP) MAXIMUM RATINGS Rating Symbol Max Unit VCB 40 Vdc VCEO
ON Semiconductor
Original

1N5825

Abstract: MJD200 (i.e. MJD200­1) 5ms TJ = 150°C 100µs 1ms 500µs dc BONDING WIRE LIMITED THERMALLY , ON Semiconductort NPN Complementary Plastic Power Transistors MJD200 PNP MJD210 NPN , , 2001 ­ Rev. 4 1 inches mm Publication Order Number: MJD200/D 2 http://onsemi.com , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (continued) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD200 MJD210 , Resistance, Junction to Ambient* Characteristic THERMAL CHARACTERISTICS MJD200 MJD210 MJD200
ON Semiconductor
Original

1N5825

Abstract: MJD200 breakdown. Case 369 may be ordered by adding a "­1" suffix to the device title (i.e. MJD200­1) 5ms TJ , ON Semiconductort NPN Complementary Plastic Power Transistors MJD200 PNP MJD210 NPN , Order Number: MJD200/D 2 http://onsemi.com *When surface mounted on minimum pad sizes , Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD200 MJD210 Collector­Emitter Saturation Voltage (2 , Ambient* Characteristic THERMAL CHARACTERISTICS MJD200 MJD210 MJD200 MJD210 2 1.5 TC
ON Semiconductor
Original

MJD200

Abstract: MJD200G , f = 0.1 MHz) MJD200 MJD210 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%. 4. fT = hfe· ftest. ORDERING INFORMATION Device MJD200 Package Type Shipping DPAK MJD200G DPAK (Pb-Free) MJD200RL 75 Units / Rail DPAK MJD200RLG MJD200T4 MJD200T4G MJD210 DPAK , MJD200 (NPN) MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For , Industries, LLC, 2010 July, 2010 - Rev. 9 1 Publication Order Number: MJD200/D MJD200 (NPN
ON Semiconductor
Original

NJVMJD210T4G

Abstract: PNP Transistor DPAK (on) fT Vdc Vdc DYNAMIC CHARACTERISTICS 65 - - - MHz pF MJD200 MJD210, NJVMJD210T4G Cob 80 120 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%. 4. fT = hfe ftest. http://onsemi.com 2 MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) ORDERING INFORMATION Device MJD200G MJD200RLG MJD200T4G MJD210G , MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon , Publication Order Number: MJD200/D MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) MAXIMUM RATINGS Rating
ON Semiconductor
Original

MJD200

Abstract: MJD200G INFORMATION Device MJD200 Package Type Shipping DPAK MJD200G DPAK (Pb-Free) MJD200RL 75 Units / Rail DPAK MJD200RLG MJD200T4 MJD200T4G MJD210 DPAK (Pb-Free) 1800 / Tape & , MJD200 (NPN) MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For , Industries, LLC, 2005 December, 2005 - Rev. 7 1 Publication Order Number: MJD200/D MJD200 (NPN , , VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD200
ON Semiconductor
Original

MJD200

Abstract: MJD200G INFORMATION Device MJD200 Package Type Shipping DPAK MJD200G DPAK (Pb-Free) MJD200RL 75 Units / Rail DPAK MJD200RLG MJD200T4 MJD200T4G MJD210 DPAK (Pb-Free) 1800 / Tape & , MJD200 (NPN) MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For , , LLC, 2006 August, 2006 - Rev. 8 1 Publication Order Number: MJD200/D MJD200 (NPN) MJD210 , , VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD200
ON Semiconductor
Original

TI05

Abstract: MJD200 MJD200 NPN EPITAXIAL SILICON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS â'¢ High DC Current Gain â'¢ Built-in a Damper Diode at E-C â'¢ Lead Formed for Surface Mount Applications (No Suffix) « Straight Lead (I. PACK," - I" Suffix) ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating , MJD200 NPN EPITAXIAL SILICON TRANSISTOR nc mmmsH* SAW : 1j:11 I Ã& IlÉSI â'¢ - , This Material Copyrighted By Its Respective Manufacturer MJD200 NPN EPITAXIAL SILICON TRANSISTOR
-
OCR Scan
TI05 transistor nc

1N5825

Abstract: MJD200 "­1" suffix to the device title (i.e. MJD200­1) v 1 2 3 5 7 10 20 VCE, COLLECTOR­EMITTER , SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN SEMICONDUCTOR TECHNICAL DATA Order this document by MJD200/D , CURRENT (AMPS) 5 3 2 5 10 MJD200 MJD210 10 VCC = 30 V IC/IB = 10 TJ = 25 , 0.3 0.5 1 2 IC, COLLECTOR CURRENT (AMPS) 50 30 20 tr MJD200 MJD210 3 5 10 tf
Motorola
Original

MJD200

Abstract: fr 0204 MJD200 MJD210 COMPLEMENTARY SILICON POWER TRANSISTORS . STM PREFERRED SALESTYPES . , ) APPLICATIONS . AUDIO AMPLIFIERS DESCRIPTION The MJD200 is an Epitaxial-Base NPN transistor designed for low , ) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN MJD200 PNP MJD210 VcBO Collector-Base , 150 °c For PNP types voltage and current values are negative. June 1998 1/4 MJD200 / MJD210 , duration = 300 |xs, duty cycle < 2 % For PNP type voltage and current values are negative. 2/4 MJD200
-
OCR Scan
fr 0204 TO252-DPAK 0212c 0068772-B
Abstract: MOTOROLA Order this document by MJD200/D SEMICONDUCTOR TECHNICAL DATA NPN M JD 200 PNP , 'CBO nAdc (continued) ftf) M O T O R O L A MJD200 MJD210 ELECTRICAL CHARACTERISTICS â , , ffest = 10 MHz) Output Capacitance (VCB = 10 Vdc, lE = 0, f = 0.1 MHz) MJD200 MJD210 â'" (1 , . Turn-Off Time Motorola Bipolar Power Transistor Device Data MJD200 MJD210 PNP MJD210 lC , C O LLE , G A IN NPN MJD200 v . VOLTAGE (VOLTS) Figure 5. DC Current Gain lc , C O LLE C T O R -
OCR Scan
Abstract: (Pbâ'Free) 75 Units / Rail MJD200RLG DPAK (Pbâ'Free) 1,800 / Tape & Reel MJD200T4G DPAK , MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) Complementary Plastic Power Transistors NPN/PNP , Publication Order Number: MJD200/D MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) MAXIMUM RATINGS Rating , , IE = 0, f = 0.1 MHz) fT MJD200 MJD210, NJVMJD210T4G 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%. 4. fT = hfeï'· ftest. http://onsemi.com 2 Cob MHz pF MJD200 (NPN ON Semiconductor
Original

MJD200

Abstract: MJD200 MJD200 D-PACK for Surface Mount Applications · · · · High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I , . A1, February 2001 MJD200 hFE, DC CURRENT GAIN 1000 100 VCE=2V VCE=1V 10 1 0.01 , VOLTAGE Figure 6. Safe Operating Area Rev. A1, February 2001 MJD200 Typical Characteristics , Fairchild Semiconductor Corporation Rev. A1, February 2001 MJD200 Package Demensions D-PAK
Fairchild Semiconductor
Original
Abstract: MJD200 MJD200 D-PACK for Surface Mount Applications · · · · High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I. PACK, " - I , International Rev. A, February 2000 MJD200 Typical Characteristics ©2000 Fairchild Semiconductor International Rev. A, February 2000 MJD200 Typical Characteristics (continued) ©2000 Fairchild Semiconductor International Rev. A, February 2000 MJD200 Package Dimensions D-PAK 6.60 ±0.20 5.34 Fairchild Semiconductor
Original

transistor t4 3570

Abstract: 9y transistor Motorola Bipolar Power Transistor Device Data M JD 200 M JD 210 NPN MJD200 PNP MJD210 hpE. D C , 369-05 may be ordered by adding a "-1 " suffix to the device title (i.e. MJD200-1) VCE
-
OCR Scan
transistor t4 3570 9y transistor transistor 3569 t4 3570 dpak T4 3570 transistor jd JD200 JD210 150-C
Showing first 20 results.