NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| MJ8100 | Motorola | European Master Selection Guide 1986 |
1 pages, |
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| MJ8100 | Motorola | Semiconductor Data Library Volume 3 1974 |
2 pages, |
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| MJ8100 | N/A | Semiconductor Master Cross Reference Guide |
1 pages, |
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| MJ8100 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
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| MJ8100 | N/A | Shortform Transistor Datasheet Guide |
1 pages, |
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| MJ8100 | Semelab | Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package - Pol=PNP / Pkg=TO39 / Vceo=60 / Ic=5 / Hfe=25-180 / fT(Hz)=30M / Pwr(W)=10 |
1 pages, |
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| MJ8100 | Semelab | Bi-polar Transistors (CECC and High Rel) & High Energy |
1 pages, |
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| MJ8100 | N/A | Shortform Transistor PDF Datasheet |
1 pages, |
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| MJ8100 | N/A | Shortform Transistor PDF Datasheet |
1 pages, |
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| MJ8100 | N/A | Transistor Replacements |
1 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: MJ8100 (SILICON) MJ8101 MJ8101 MEDIUM-POWER PNP SILICON TRANSISTORS . designed for switching and wide , the Compact TO-39 Case for Critical Space-Limited Applications. MAXIMUM RATINGS Rating Symbol MJ8100 , Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (lC=S0mAdc, lB-0) MJ8100 MJ8101 MJ8101 vCEO(sus) 60 80 - Vdc Collector Cutoff Current (VCE - 55 Vdc, lB - 0) MJ8100 (VCE-75Vdc, lB-0) MJ8101 MJ8101 'CEO - 100 100 MAdc Collector Cutoff Current (VCE - 55 Vdc, VBE(off) * 15 Vck:l MJ8100 (VCE - 75 Vdc ... | OCR Scan |
2 pages, |
MJ8101 MJ8100 MJ8100 abstract |
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| Abstract: MJ8100 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021) dia. IC = 5A 5.08 (0.200) typ. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 2.54 (0.100 ... | Original |
1 pages, |
MJ8100 MJ8100 abstract |
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| Abstract: POWER TRANSISTORS - BIPOLAR METAL (continued) TO-39 Package CASE 79-02 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR (Pin 3 connected to case) Resistive Switching ts t, h PD (Case) lcCont VcEO (sus) Device Type hFE @ le US US @ lc MHZ Watts Amps Max Volts Min NPN PNP Min/Max Amp Max Max Amp Min @ 25°C 0.5 300 MJ4646 MJ4646 20 min 0.5 0.72* 0.05 40 5 400 MJ4647 MJ4647 20 min 0.5 0.72* 0.05 30 5 5 60 MJ8100 25/180 2 1 0.15 2 30 10 80 2N5337 2N5337 2N6191 2N6191 60/240 2 2 0.2 2 30 6 100 2N5338 2N5338 ... | OCR Scan |
1 pages, |
MJ8100 MJ4647 MJ4646 2N6193 2N5339 2N5338 2N5337 2N6191 datasheet abstract |
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| Abstract: Industry Type: 2N6316 2N6316 STI Type: MJ8100 Notes: Polarity: PNP Power Dissipation: 10 Tj: 200 VCBO: 60 , : TO-205AD/TO-39: Industry Type: MJ8100 STI Type: MJ7261 MJ7261 Notes: Polarity: NPN Power Dissipation: 175 ... | Original |
75 pages, |
mje15033 hfe 2500 MJE4923 MJE52T mj15024 MJ423 MJ4381 mj411 transistor data sheet MJ2250 MJ21194 MJE10001 MJ16016 MJ2252 MJ3247 MJ13330 MJ13330 MJ13330 abstract |
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| Abstract: PRODUCT 2C415 2C415 2C425 2C425 2C444 2C444 2C746 2C746 2N1131L 2N1131L 2N1132 2N1132 2N1132CSM 2N1132CSM 2N1132DCSM 2N1132DCSM 2N1208 2N1208 2N1209 2N1209 2N1482 2N1482 2N1483 2N1483 2N1483A 2N1483A 2N1484A 2N1484A 2N1485 2N1485 2N1485A 2N1485A 2N1486 2N1486 2N1486A 2N1486A 2N1613 2N1613 2N1613L 2N1613L 2N1616 2N1616 2N1617 2N1617 2N1618 2N1618 2N1711 2N1711 2N1717 2N1717 2N1721 2N1721 2N1722 2N1722 2N1724 2N1724 2N1724A 2N1724A 2N1889 2N1889 2N1890 2N1890 2N1893 2N1893 2N1893CSM 2N1893CSM 2N1893DCSM 2N1893DCSM 2N1893X 2N1893X 2N2060 2N2060 2N2060A 2N2060A 2N2060ADCSM 2N2060ADCSM 2N2060DCSM 2N2060DCSM 2N2102 2N2102 2N2102L 2N2102L 2N2192 2N2192 2N2192A 2N2192A 2N2192AL 2N2192AL 2N2192L 2N2192L 2N2194 2N2194 2N2194A 2N2194A 2N2197 2N2197 2N2197-TO39 2N2197-TO39 2N2218 2N2218 PRODUCT BCY78CSM BCY78CSM BCY78DCSM BCY78DCSM BCY79 BCY79 BCY79A BCY79A BCY79B BCY79B ... | Original |
1197 pages, |
2N2222A LCC1 MOSFET IRF460 flat package 800V PNP 200v 5A mosfet 2N3055 TO220 MOSFET IRF460 TO 247 BD124 transistor 2n1208 REGULATOR IC LM7815 SML1004RGN Diode 400V 5A 2C415 2C425 2C415 abstract |
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| Abstract: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The Transistor and Diode Data Book for Design Engineers Texas Instruments INCORPORATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY TRANSISTOR DATA SHEETS TRANSISTOR CHIP CHARACTERIZATION TRANSISTOR QUALITY AND RELIABILITY INFORMATION DIODE PRODUCT SPECTRUM DIODE SELECTION GUIDES DIODE INTERCHANGEABILITY DIODE DATA SHEETS SENSISTORS® TI Worldwide Sales Offices ALABAMA: Huntayille, ... | OCR Scan |
1236 pages, |
hep 154 silicon diode 2N2646 motorola 2N3035 and applications Diode Equivalent 1N34A transistor 2N2007 LM 4440 AUDIO AMPLIFIER CIRCUIT 1n5248 diode d.a.t.a. book 2n3819 replacement Til 322A transistor cs 9012 free transistor equivalent book 2sc datasheet abstract |
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| Abstract: MJ8100R Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021) dia. IC = 5A 5.08 (0.200) typ. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 2.54 (0.100 ... | Original |
1 pages, |
MJ8100R mj810 MJ8100R abstract |
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| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| MJ8100 | N/A | Silicon PNP | |
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| MJ8100 | N/A | RHG | |
| Part | Similar Part | Notes |
| MJ8100 Buy | 2N4895 Buy | |
| MJ8100 Buy | 2N5153 Buy | |
| MJ8100 Buy | 2N6190 Buy | |
| MJ8100 Buy | 2N6191 Buy | |
| MJ8100 Buy | 2N6192 Buy | |
| MJ8100 Buy | 2N6192..6193 Buy | |
| MJ8100 Buy | 2N6193 Buy | |
| MJ8100 Buy | 2N6293 Buy | |
| MJ8100 Buy | 3CA8B Buy | |
| MJ8100 Buy | BFT35 Buy |