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MJ413 Datasheet

Part Manufacturer Description PDF Type
MJ413 Micro Commercial Components 10 Amp NPN Silicon Power Transistors 125W Original
MJ413 Motorola 10 AMPERE POWER TRANSISTORS NPN SILICON Original
MJ413 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package Original
MJ413 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
MJ413 Motorola Motorola Semiconductor Datasheet Library Scan
MJ413 Motorola The European Selection Data Book 1976 Scan
MJ413 Motorola Semiconductor Data Library Volume 3 1974 Scan
MJ413 Motorola European Master Selection Guide 1986 Scan
MJ413 N/A Shortform Transistor PDF Datasheet Scan
MJ413 N/A Transistor Replacements Scan
MJ413 N/A Transistor Replacements Scan
MJ413 N/A Transistor Replacements Scan
MJ413 N/A Semiconductor Master Cross Reference Guide Scan
MJ413 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
MJ413 N/A Shortform Transistor Datasheet Guide Scan
MJ413 N/A Vintage Transistor Datasheets Scan
MJ413 Semiconductor Technology NPN High Voltage Power Transistors in TO-3 and TO-220 Case Outline Scan
MJ413-BP Micro Commercial Components TRANS GP BJT NPN 400V 10A 2TO-3 Original

MJ413

Catalog Datasheet MFG & Type PDF Document Tags

MJ423

Abstract: MJ413 MJ413 (SILICON) MJ423 MJ431 CASE 11 High-voltage NPN silicon transistors designed for , CASE: COLLECTOR maximum ratings Rating Symbol MJ413 MJ423 MJ431 Unit Collector-Emitter Voltage v CEX , 'ž_ = 400 Vdc, V_, â'ž,= 1. 5 Vdc) MJ413, MJ423 CE EB(of[) MJ431 (VCE= 400 Vdc, VEB(off) = 1. 5 Vdc, MJ413, MJ423 TC=125'C) MJ431 ®CEX _ 0.25 2.5 0.5 5.0 mAdc mAdc Emitter Cutoff Current (Vâ'ž = 5.0 Vdc , . 5 Adc, VCE = 5. 0 Vdc) MJ413 hFE 20 80 -
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OCR Scan
NIJ431 J413

MJ413

Abstract: MJ423 1.0 Adc, IB ­ 0.10 Adc) MJ413 MJ423 Base­Emitter Saturation Voltage (IC = 0.5 Adc, IB = 0.05 Adc) (IC = 1.0 Adc, IB = 0.1 Adc) MJ413 MJ423 DC Current Gain(1) (IC = 0.5 Adc, VCE = 5.0 Vdc , ) Vdc VCE(sat) MJ423 MJ413 Vdc hFE - ON CHARACTERISTICS Collector Cutoff Current , MJ413 MJ423 Unit VCEX VCB 400 400 Vdc 400 400 Vdc VEB IC 5.0 5.0 , Transistors MJ413 MJ423 SEMICONDUCTOR TECHNICAL DATA Order this document by MJ413/D MOTOROLA
Motorola
Original
mj423 motorola MOTOROLA TRANSISTOR MJ413/D

MJ423

Abstract: MJ413 MCC )HDWXUHV · · · MJ413 MJ423 MJ431 omponents 21201 Itasca Street Chatsworth , MJ413, MJ423 & MJ431 (OHFWULFDO &KDUDFWHULVWLFV # °& 8QOHVV 2WKHUZLVH 6SHFLILHG Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage(1) (IC=100mA, IB=0) Collector Cutoff Current MJ413 MJ423 (VCE=400V, VEB(off)=1.5V) MJ431 MJ413 MJ423 (VCE=400V, VEB(off)=1.5V, TC=125 ) MJ431 Emitter Cutoff Current MJ413 MJ423 (VBE=5.0Vdc, IC=0) MJ431 ON CHARACTERISTICS DC Current Gain MJ413 (IC
Micro Commercial Components
Original

J413

Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ413/D High-Voltage NPN , Frequency Response to 2.5 MHz MJ413 MJ423 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS , perating Junction Temperature Range Storage Temperature Range Tj Tstg Symbol VCEX VCB Veb ic MJ413 , itter Saturation Voltage (I q = 0.5 Ade, Iß = 0.05 Ade) (I q = 1.0 Ade, Iß = 0.1 Ade) MJ413 MJ423 MJ413 MJ423 v BE(sat) - - 1.25 1.25 v CE(sat) - - 0.8 0.8 Vdc MJ423 MJ413 hFE 20 15 30 10 80 90 Vdc
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OCR Scan

mj413

Abstract: DATA SEMICONDUCTOR MJ413 MJ423 MJ431 HIGH-VOLTAGE NPN SILICON TRA N SISTO RS . . . designed , Temperature Range Symbol VCEX YCB VEB MJ413 400 400 s.o ID 2.0 MJ423 400 400 5.0 *c *B *D id , (BRiCEOCsua) MJ413, MJ423 HJ413, MJ423 w ,« , M J « j . MMM *CEX Vdc 325 - mAdc Ë *EBO _ 0.25 , Ade) MJ413 MJ423 MJ43I MJ413 MJ423 I4J431 VBE(sat) VCE(sat) MJ431 MJ423 MJ413 hF E 20 15 30 10 15 10 , -3) Duty Cycle k 2.0% 3-524 MOTORCLA SC XSTRS/R F 15E D £ b3ti7SS4 OOflMTÎQ 0 I MJ413
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OCR Scan

mj431

Abstract: . TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 MJ413 MJ423 MJ431 Features â'¢ â , MJ413, MJ423 & MJ431 Electrical Characteristics @ 25 °C Unless Otherwise Specified Characteristic , , MJ41 3 MJ423 TC=125°C) MJ431 Emitter Cutoff Current IEBO (VBE=5.0Vdc, lc=0) MJ413MJ423 MJ431 ON CHARACTERISTICS DC Current Gain hFE (IC=0.5A, VCE=5.0V) MJ413 (IC=1.0A, VCE=5.0V) (IC , =5.0V) Collector-Emitter Saturation Voltage VcE(sat) (IC=0.5A, IB=0.05A) MJ413 (IC=1.0A, IB=0.1A) MJ423 (IC=2.5A, IB
New Jersey Semiconductor
Original

MJ413

Abstract: J413M MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Voltage NPN Silicon Transistors . . . designed for m edium -to-high voltage inverters, converters, regulators and switching circuits. · · · High Voltage - V q e x = 400 Vdc Gain Specified to 3.5 Amp High Frequency Response to 2.5 MHz M J413 M J423 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS MAXIMUM RATINGS Rating Symbol MJ413 , ) MJ413 MJ423 20 15 30 10 VCE(sat) MJ413 MJ423 VßE(sat) MJ413 MJ423 - - - - 80 90
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OCR Scan
J413M WS300

MJ413

Abstract: SavantIC Semiconductor Product Specification MJ413 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage APPLICATIONS ·Designed for medium-to-high voltage Inverters,converters,regulators and switching circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 , junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification MJ413 , PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 MJ413 -
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Original

DC DC converter 50mA 400V

Abstract: npn transistor 400V isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ413 DESCRIPTION ·High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 325V(Min.) ·DC Current Gain: hFE= 20-80@ IC= 0.5A APPLICATIONS ·Designed for medium to high voltage inverters, converters, regulators and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO , MJ413 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS
INCHANGE Semiconductor
Original
DC DC converter 50mA 400V npn transistor 400V 400V voltage regulator DC DC converter 5v to 400V 400V 100MA NPN diode 400v 0.5a

MC1566L

Abstract: MC1466L equivalent the pass transistor. Figure 13 shows a safe area curve for the MJ413. Looking at Figure 3, we see that , FIGURE 13 - SAFE AREA CURVE FOR THE MJ413 1.i o 0.01 tf # «« Tj - ISO' C â'" SECONDARY BREAKDOWN , 8 J 1N4001 OR EQUIV 12 1.2 k 10 pF 240 pF 11 «1 1 k 10 Vin - 210 V MJ413 OR EQUIV 18 k -vw «2 200 , MC1566 8 3 1.2 k 240 pF 11 10 il 8.55 k R ref Note: All Ground Connections at Load Site. m MJ413 OR , All diodes are 1N4001 or equivalent. 13 100 IVIU I tvv MC1566 1.2 k 240 pF 11 Vin = 260 V MJ413 OR
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OCR Scan
MC1466L MC1566L MC1466 MC1466L equivalent 1466 HO schematic of mc1466 MC1466/MC1566 MO-001AA O-TO-15 10-AMPERES
Abstract: MJ413 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 400V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 10A All Semelab hermetically sealed products can Semelab
Original

mj 13003

Abstract: transistor MJ 13009 STI-410 200 10 2.5 TO-3 MJ411 STI-411 300 10 2.5 TO-3 MJ413 STI-413 400* 15 1.0 TO-3 MJ423 STI
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OCR Scan
MJE13000 mj 13003 transistor MJ 13009 transistor MJ 13003 transistor MJ 13007 mj 13002 T0-220 MJ410 STI-423 STI-431 MJE13002

MJ413

Abstract: MJ413 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. Bipolar NPN Device. VCEO = 400V 3 (case) 3.84 (0.151) 4.09 (0.161) IC = 10A 7.92 (0.312) 12.70 (0.50) All Semelab hermetically
Semelab
Original
Abstract: MJ413 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 400V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 10A All Semelab hermetically sealed products can Semelab
Original

MJ413

Abstract: MJ431 MJ431 _ , T , , MMMD, For Specifications, See MJ413 Data. MJ450 (SILICON) HIGH-POWER PNP SILICON TRANSISTOR . designed for high-current switching and general purpose amplifier applications. â'¢ Low Saturation Voltage - VcE(sat) " 1 0 Vdc @
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OCR Scan

MJ3029

Abstract: MJ3011 MOTOROL A SC {D IODES/OPT O} 3M DE |t.3b?5S5 D037TSS 6367255 MOTOROLA SC CDIODES/OPTO) 34C 37955 SILICON POWER TRANSISTOR DICE (continued) T '3 3 DIE NO. - NPN LINE SOURCE - PL500.366 2C6545 & Designed for highvoltage inverters, converters, and switching regulator applications. This die provides performance equal to or better than that of the following device types: 2N3902 2N5157 2N5241 2N6306 2N6307 2N6308 2N6544 2N6545 MJ410 MJ411 MJ413 MJ423 MJ424
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OCR Scan
MJ3010 MJ3011 MJ3029 MJ7261 MJ9000 2N6307 Motorola MJ-43 MJ425 MJ3012 MJ3430

MJ420

Abstract: MJ423 , COLLECTOR CURRENT (mAdc) VCB. COLLECTOR-BASE VOLTAGE (VOLTS) MJ423 For Specifications, See MJ413 Data. 375
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OCR Scan
MJ420 MJ421

PP4058

Abstract: PT500 table -2 SDT5850 SDT99502 SPP2147 49 KSP1256 S2N5539-3 SDT5851 SDT99503 SPP2148 50 MJ413
PowerTech
Original
PP4058 AT-1142 TIP548 WT5506 BLX27 PT3523 PT500 table SDT8923 SDT423 PT8502 2SD14 SDT14411 SDT55404 SDT8002 SDT9610

but16

Abstract: MJ12005 5 5 4 4 150 150 150 140 2N3442 20/70 4 117 250 MJ15011 M415012 20/100 2 200 325 MJ413
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OCR Scan
MJ4247 MJ4237 MJ10011 MJ12005 2N3792 MJ2501 but16 2N3792 MOTOROLA BDX66 MOTOROLA MJ10006 MJ1000 BDX63 MJ900 BDX62 MJ1001 BDX63A

MJ1000

Abstract: BUX42 BUX43 BUX44 BUX45 BUX47 BUX48 BUX69A BUX69B BUX69C MJ410 MJ411 MJ413 MJ423 MJ431
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OCR Scan
00D5M BUX17 BUX17A BUX17B BUX17C BUX18

transistor MJ2501

Abstract: BU108 MJ413 MJ423 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , Symbol VCEX VCB VEB IC IB PD MJ413 400 400 5.0 10 MJ423 400 400 5.0 10 Unit Vdc Vdc Vdc Adc Adc , ON CHARACTERISTICS - MJ413 MJ423 20 15 30 10 80 - 90 - Collector­Emitter Saturation , (IC = 0.5 Adc, IB = 0.05 Adc) (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) Vdc MJ413 MJ423 - - - - 0.8 0.8 VBE(sat) Vdc MJ413 MJ423 1.25 1.25 DYNAMIC CHARACTERISTICS
Motorola
Original
transistor MJ2501 BU108 BU100 BDX54 BU326 transistor 2sC2238 MJ15012 MJE15030 2N6339 2N6341 2N6497 MJ15016

mje15033 replacement

Abstract: BD262 DARLINGTON MJ15011 MJ413 MJ423 MJ15012 20/100 20/80 30/90 150 min 30/300 100/2k 400 BU323A (2) MJ10007
Motorola
Original
mje15033 replacement BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 BD262A DARLINGTON 2N3055 2N6576 2N6577 2N6578 BU208A MJE16106

BU108

Abstract: MJ3055 to220 MJ15011 MJ413 MJ423 MJ15012 20/100 20/80 30/90 150 min 30/300 100/2k 400 BU323A (2) MJ10007
Motorola
Original
MJ3055 to220 2N6277 2SC1943 transistor Bc 574 2n6107 MOTOROLA 2SC1419 BUV21 MJ16012 MJ10009 TIP101 TIP102 TIP106

BU108

Abstract: 2N3055 (2) MJ2501 (2) 1k min 20/70 140 250 325 2N3442 MJ15011 MJ413 MJ423 MJ15012 20
Motorola
Original
BDV64 AN415A MJE2955T ST 2n3055 audio amplifier application note mje13005 MJE2955T MJE3055T 220AB TIP107 TIP31C TIP32C

pin configuration transistor bd140

Abstract: 2SD669 equivalent (2) MJ2501 (2) 1k min 20/70 140 250 325 2N3442 MJ15011 MJ413 MJ423 MJ15012 20
Motorola
Original
pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD136 BD138 BD140 BD140-10 TIP120 TIP121

texas 2n3055

Abstract: BU108 (2) MJ2501 (2) 1k min 20/70 140 250 325 2N3442 MJ15011 MJ413 MJ423 MJ15012 20
Motorola
Original
texas 2n3055 2N5655 equivalent 2n3055 replacement 2n3055 MJ15003 2N3055/2N3055 transistor equivalent to220 2N5981 pnp transistor MJ2955 204AA TIP122 TIP125 TIP126 TIP127

tip3055 equivalent

Abstract: IC 3526 (2) MJ2501 (2) 1k min 20/70 140 250 325 2N3442 MJ15011 MJ413 MJ423 MJ15012 20
Motorola
Original
tip3055 equivalent IC 3526 transistor MJ15024 RCA1C13 Mj21194 2N3791 equivalent BD802 TIP73B TIP74 TIP74A TIP74B TIP75

BDV65B equivalent

Abstract: BU108 (2) MJ2501 (2) 1k min 20/70 140 250 325 2N3442 MJ15011 MJ413 MJ423 MJ15012 20
Motorola
Original
BDV65B equivalent buv48 equivalent tip127 pin details mje340 2SD424 BDV65B BDV64B TIP75A TIP75B TIP75C 2N6488

TIP36

Abstract: BD413 (2) MJ2501 (2) 1k min 20/70 140 250 325 2N3442 MJ15011 MJ413 MJ423 MJ15012 20
Motorola
Original
TIP36 BD413 2SC331 2sc2159 BD419 2SD364 2N6490 2N6491 TIPL752 TIPL752A TIPL753 TIPL753A

TIP42C as regulator

Abstract: BU108 (2) MJ2501 (2) 1k min 20/70 140 250 325 2N3442 MJ15011 MJ413 MJ423 MJ15012 20
Motorola
Original
MJE1123 TIP42C as regulator MOTOROLA MJ15024 2SB56 2SD675 2SA124 TIPL755 TIPL755A TIPL760 TIPL760A MJ16110
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