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MJ2955 2n3055 200 watts amplifier

Catalog Datasheet MFG & Type PDF Document Tags

2N3055 power amplifier circuit

Abstract: 2n3055 Region Safe Operating Area http://onsemi.com 3 2N3055 MJ2955 NPN 2N3055 500 300 200 hFE , DC , applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device NPN · DC Current Gain - hFE = , Temperature Range TJ, Tstg ­65 to +200 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS , DISSIPATION (WATTS) 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 Figure 1 , Publication Order Number: 2N3055/D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ
ON Semiconductor
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2N3055 power amplifier circuit 2n3055 application 2N3055 MEXICO 2n3055 circuit 2N3055 typical applications 2N3055 MJ2955 204AA 2N3055/D

2N3055 power circuit

Abstract: 2N3055 power amplifier circuit general­purpose switching and amplifier applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device , http://onsemi.com 3 2N3055 MJ2955 NPN 2N3055 500 300 200 hFE , DC CURRENT GAIN 100 70 50 30 20 , Watts W/_C _C Operating and Storage Junction Temperature Range TJ, Tstg ­65 to +200 15 AMPERE POWER , April, 2001 ­ Rev. 2 Publication Order Number: 2N3055/D 2N3055 MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , : Pulse Width v 300 µs, Duty Cycle v 2.0%. http://onsemi.com 2 2N3055 MJ2955 20 IC, COLLECTOR
ON Semiconductor
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2N3055 power circuit 2n3055 equal 2N3055 JAPAN DC variable power with 2n3055 MJ2955 mexico 2N3055-1

2n3055

Abstract: 2N3055 NPN Transistor Area http://onsemi.com 2 2N3055(NPN), MJ2955(PNP) 500 200 300 VCE = 4.0 V TJ = 150 , 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for generalâ'purpose switching and amplifier applications , Number: 2N3055/D 2N3055(NPN), MJ2955(PNP) à à à à à à , ' Voltages, MJ2955 (PNP) http://onsemi.com 3 10 2N3055(NPN), MJ2955(PNP) PACKAGE DIMENSIONS TOâ
ON Semiconductor
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2N3055 NPN Transistor 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 application note

2n3055 malaysia

Abstract: MJ2955 2n3055 200 watts amplifier 2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and , 31/05/05 V1.0 2N3055, MJ2955 Complementary Power Transistors Thermal Characteristics , 300µs, Duty Cycle 2.0%. (2) fT = hfe · ftest. Page 2 31/05/05 V1.0 2N3055, MJ2955 , imposed by second breakdown. VCE, Collector Emitter Voltage (Volts) NPN 2N3055 PNP MJ2955 DC , ) IB, Base Current (mA) Page 3 31/05/05 V1.0 2N3055, MJ2955 Complementary Power Transistors
Multicomp
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2n3055 malaysia MJ2955 2n3055 200 watts amplifier 2n3055 pnp MJ2955 300 watts amplifier 2n3055 IC 2N3055 curve

MJ2955 300 watts amplifier circuit diagram

Abstract: MJ2955 2n3055 200 watts amplifier /°C TJ, Tstg ­ 65 to + 200 °C xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly , Figure 2. Active Region Safe Operating Area http://onsemi.com 2 2N3055, MJ2955 500 200 300 , 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , Device Package Shipping 2N3055 TO-204AA 100 Units / Tray MJ2955 TO-204AA 100 , Publication Order Number: 2N3055/D 2N3055, MJ2955 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise
ON Semiconductor
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MJ2955 300 watts amplifier circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 TRANSISTOR 2N3055 equivalent transistor NUMBER DC variable power with 2n3055 datasheet mj2955 TO-3

2n3055

Abstract: 2N3055 curve mA MAXIMUM RATINGS NPN PNP 2N3055 MJ2955 Characteristic Symbol Rating Unit Collector-Emitter , = |hfe| °ftert 2N3055.MJ2955 ACTIVE REGION SAFE OPERATING AREA(SOA) E * -Bcndng VWre Limit , (VOLTS) http://www.bocasemi.com 2N3055 NPN / MJ2955 PIMP NPN 2N3055 DC CURRENT GAIN PNP MJ2955 DC , COMPLEMENTARY SILICON POWER TRANSISTORS .designed for use in general-purpose amplifier and , - 65 to +200 °c THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance
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2n3055 collector characteristic curve npn 2n3055 2N3055/MJ2955 MJ29S5

2N3055 MOTOROLA

Abstract: 2N3055 power amplifier circuit 2N3055 MJ2955 NPN 2N3055 PNP MJ2955 500 200 300 VCE = 4.0 V TJ = 150°C VCE = 4.0 , . 1995 Motorola Bipolar Power Transistor Device Data 1 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS , Registration. (2N3055) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle v v 2.0%. 2N3055, MJ2955 20 , Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE DIMENSIONS A N NOTES , MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055
Motorola
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2N3055 MOTOROLA 2N3055 NPN MOTOROLA POWER TRANSISTOR pin out TRANSISTOR 2n3055 power transistor 2n3055 2n3055 datasheet 2N3055 TO-3

2N3055

Abstract: 2n3055 motorola 2N3055 MJ2955 NPN 2N3055 PNP MJ2955 500 200 300 VCE = 4.0 V TJ = 150°C VCE = 4.0 , 0.657 Watts W/_C TJ, Tstg ­ 65 to + 200 _C Symbol Max Unit RJC 1.52 _C/W , Registration. (2N3055) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle v v 2.0%. 2N3055, MJ2955 20 , Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE DIMENSIONS A N NOTES , MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055
Motorola
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2N3055-D hfe 2n3055

2N3055

Abstract: DC variable power with 2n3055 Area http://onsemi.com 36 2N3055, MJ2955 500 300 200 hFE , DC CURRENT GAIN 25°C 100 70 50 30 , 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly Location , ) 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 2N3055H MJ2955 100 Units / Tray 100 , /D 2N3055, MJ2955 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ
ON Semiconductor
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2N3055G 2N3055 transistor 2n3055 amplifier mj2955 safe operating area data transistor 2n3055 Mj2955 power transistor

2n3055

Abstract: 2N3055M NPN PNP 2N3055 MJ2955 Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 60 V , 300 us , Duty Cycle ^ 2.0% fT= |hf9| °ftert 2N3055.MJ2955 ACTIVE REGION SAFE OPERATING AREA(SOA) E , NPN / MJ2955 PIMP NPN 2N3055 DC CURRENT GAIN PNP MJ2955 DC CURRENT GAIN 300 100 70 50 0.1 ~ T , amplifier and switching applications FEATURES: * Power Dissipation - PD = 115W@TC = 25°C * DC Current , W W/°C Operating and Storage Junction Temperature Range TJ 'TST0 - 65 to +200 °c THERMAL
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2N3055M 2N3055MJ

2n3055

Abstract: 2N3055G Region Safe Operating Area http://onsemi.com 2 2N3055(NPN), MJ2955(PNP) 500 200 TJ = 150 , 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors , . Publication Order Number: 2N3055/D 2N3055(NPN), MJ2955(PNP) Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , Saturation Region, 2N3055 (NPN) 10 20 50 100 200 500 1000 2000 IB, BASE CURRENT (mA) 5000 , , COLLECTOR CURRENT (AMP) Figure 7. "On" Voltages, 2N3055 (NPN) Figure 8. "On" Voltages, MJ2955 (PNP
ON Semiconductor
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pnp transistor 2N3055 2N30 MJ2955G

MJ2955 TRANSISTOR

Abstract: pnp transistor 2N3055 A * V cE (*t) * NPN 2N3055 PNP MJ2955 11 v @ 'c = 4 0 A - 'b = 400 , SILICON POWER TRANSISTORS 60 VOLTS 115 WATTS :i W W /°C °C - 65 to +200 "*"j iTSTq THERMAL , 17.30 4.36 11.18 2N3055 NPN / MJ2955 PNP ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise , 2.0% (2 ) f T = | K » | * f tort MHz 2.5 15 120 2N3055.MJ2955 AC TIVE REG ION SAFE O PERATING , the limitations imposed by second breakdown. 2N3055 NPN / MJ2955 PNP NPN 2N3055 DC C U R R E N T
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Transistor MJ2955 t 2N3055 J 2N3055 2n3055 pin 2n3055 npn power transistor

2N3055G

Abstract: MJ2955 2n3055 200 watts amplifier diagram 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general-purpose switching and amplifier applications , overall value. 2N3055(NPN), MJ2955(PNP) Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î Î Î , Area 2 2N3055(NPN), MJ2955(PNP) PACKAGE DIMENSIONS TO-204 (TO-3) CASE 1-07 ISSUE Z NOTES , 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS VCE(sat) = 1.1 Vdc (Max
ON Semiconductor
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MJ-20 OF transistor 2n3055 to-3 package TO-204AA transistor power transistor mex transistor npn 2n3055g

2n3055 application note

Abstract: 2N3055 power amplifier circuit diagram Area http://onsemi.com 2 2N3055(NPN), MJ2955(PNP) 500 300 hFE , DC CURRENT GAIN 200 100 70 50 , 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors . . . , CHARACTERISTICS Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = , 50 75 100 125 150 175 200 MJ2955 MJ2955G *For additional information on our Pb-Free strategy , Figure 3. DC Current Gain, 2N3055 (NPN) Figure 4. DC Current Gain, MJ2955 (PNP) VCE
ON Semiconductor
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2n3055 pin out diagram NPN Transistor 2N3055

2N3055 power amplifier circuit

Abstract: 2n3055 motorola 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS (T q = 25°C unless otherwise noted) Characteristic *OFF , 120 - fhfe 10 - kHz 2N3055, MJ2955 There are two limitations on the power , Operating Area 2 Motorola Bipolar Power Transistor Device Data 2N3055 MJ2955 NPN PNP MJ2955 , ) Figure 5. "On" Voltages Motorola Bipolar Power Transistor Device Data 3 2N3055 MJ2955 PACKAGE , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055/D Com plem entary
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TRANSISTOR 2n3055 J2955
Abstract: MJ2955 NPN 2N3055 PNP MJ2955 500 200 300 VCE = 4.0 V TJ = 150°C VCE = 4.0 V hFE , 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 PD, POWER DISSIPATION (WATTS , _C Derate above 25_C PD 115 0.657 Watts W/_C TJ, Tstg â'" 65 to + 200 _C Symbol , . Complementary Silicon Power Transistors 2N3055 * PNP MJ2955 * NPN SEMICONDUCTOR TECHNICAL DATA , derated for temperature according to Figure 1. 20 2N3055, MJ2955 Motorola
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2n3055 application note

Abstract: 2N3055 power amplifier circuit Figure 2. Active Region Safe Operating Area http://onsemi.com 2 2N3055, MJ2955 500 200 300 , 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for , Rev. 4 1 Publication Order Number: 2N3055/D 2N3055, MJ2955 ELECTRICAL CHARACTERISTICS (TC , . Collector Saturation Region, 2N3055 (NPN) 10 20 50 100 200 500 1000 2000 IB, BASE CURRENT (mA , , MJ2955 (PNP) http://onsemi.com 3 10 2N3055, MJ2955 PACKAGE DIMENSIONS TO-204 (TO-3) CASE
ON Semiconductor
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2n3055 motorola

Abstract: L 3055 motorola id th < 300 ills , D uty C y c le < 2.0% . 2N3055, MJ2955 There are two limitations on the , 2N3055 MJ2955 NPN PNP hF E , D C CURRENT GAIN 1C , COLLECTOR CURRENT (AMP) 1C, COLLECTOR , 2N3055 MJ2955 PACKAGE DIMENSIONS NOTES; 1. DIMENSIONING AND TOLERANCING PER ANSI t l = f c l U-D , Silicon Pow er Transistors . . . designed for general-purpose switching and amplifier applications. · · · , 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS Value 60 70 100 7 15 7 115 0
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L 3055 motorola motorola 2n3055 motorola power transistor 2N3055

transistor 2N3055

Abstract: MJ2955 300 watts amplifier SILICON 60 VOLTS 150 WATTS 411 MJ2955 (continued) ELECTRICAL CHARACTERISTICS (Tc = 25°C unless , MJ2955 (SILICON) PNP SILICON POWER TRANSISTOR . designed for general-purpose switching and amplifier applications. â'¢ DC Current Gain - hpE - 20-70® le = 4.0 Adc â'¢ Collector-Emitter , '¢ Complement to Motorola's "Epi-Base" Transistor, 2N3055 MAXIMUM RATINGS Rating Symbol Velue Unit , Device Dissipetion ®> Tc " 25°C Derate above 25°C PD 150 0.86 Watts W/° C Operating and Storage
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MJ3000 MJ3001 MJ2500 MBD5300 2N3055* motorola AN-415 C-200

J2955

Abstract: 2n3055 motorola 7 15 7 115 0.657 -6 5 to +200 Unit Vdc Vdc Vdc Vdc Adc Adc Watts W/" C °C 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 116 WATTS THERMAL CHARACTERISTICS Characteristic Thermal , Vdc VBE(on) _ Adc - fhfe - kHz 2N3055, MJ2955 20 *· % ST 10 -1 , designed for general-purpose switching and amplifier applications. · · · DC Current Gain - hFE = 2 0 -7 0 , noted) Characteristic ·OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (lc - 200 mAdc, Iq
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transistor 2N 3055 st 2n3055 2N3055 ST 2n 3055 Motorola 3055 adc 305-5
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