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Part : MJ10021 Supplier : SPC Multicomp Manufacturer : Newark element14 Stock : 149 Best Price : $3.85 Price Each : $7.46
Part : MJ10021 Supplier : NTE Electronics Manufacturer : Newark element14 Stock : 60 Best Price : $6.81 Price Each : $6.81
Part : MJ10021 Supplier : NTE Electronics Manufacturer : Allied Electronics & Automation Stock : - Best Price : $10.80 Price Each : $10.80
Part : MJ10021 Supplier : SPC Multicomp Manufacturer : element14 Asia-Pacific Stock : 2,488 Best Price : $5.69 Price Each : $8.6320
Part : MJ10021 Supplier : NTE Electronics Manufacturer : Farnell element14 Stock : - Best Price : £15.9270 Price Each : £18.4620
Part : MJ10021 Supplier : SPC Multicomp Manufacturer : Farnell element14 Stock : 2,679 Best Price : £7.23 Price Each : £16.37
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MJ10021 Datasheet

Part Manufacturer Description PDF Type
MJ10021 Motorola 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS Original
MJ10021 On Semiconductor SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Original
MJ10021 Mospec POWER TRANSISTORS(60A,200-250V,250W) Scan
MJ10021 Motorola Motorola Semiconductor Data & Cross Reference Book Scan
MJ10021 Motorola Switchmode Datasheet Scan
MJ10021 Motorola European Master Selection Guide 1986 Scan
MJ10021 N/A Shortform Transistor PDF Datasheet Scan
MJ10021 N/A Shortform Transistor PDF Datasheet Scan
MJ10021 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
MJ10021 N/A Semiconductor Master Cross Reference Guide Scan
MJ10021G On Semiconductor TRANS DARLINGTON NPN 250V 60A 3TO-204AE Original

MJ10021

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SPEEDUP DIODE NPN MJ10020 The MJ10020 and MJ10021 darlington transistors are designed for , particularly suited for line oper -ated switchmode applications such as: MJ10021 FEATURES: â , MAXIMUM RATINGS Symbol MJ10020 MJ10021 Unit Collector-Emitter Voltage VCEV 200 250 , , MJ10021 NPN ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise noted ) Characteristic Symbol , Voltage ( lc = 100 mA»lB = 0 ) MJ10020 MJ10021 Collector Cutoff Current ( VCEV= Rated Value,VBE -
OCR Scan

mj1002

Abstract: MJ10020 SPEEDUP DIODE The MJ10020 and MJ10021 darlington transistors are designed for high-voltage, high-speed , MAXIMUM RATINGS NPN MJ10020 MJ10021 60 AMPERE POWER DARLINGTON TRANSISTORS 200-250 VOLTS 250 WATTS Characteristic Symbol MJ10020 MJ10021 Unit Collector-Emitter Voltage vCEV 200 250 V Collector-Emitter Voltage , , MJ10021 NPN ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise noted ) Characteristic Symbol Min , ) MJ10020 MJ10021 VCEO(SU3) 200 250 V Collector Cutoff Current (VCEV= Rated Value,VBEjQFFj=1.5 V ) (VCEV
-
OCR Scan
mj1002

3020 transistor

Abstract: b1 100c UD Sheet MJ10020 MJ10021 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS , MJ10021 Darlington transistors are designed for high-voltage, high-speed, power switching in inductive , 1.43 MJ10021 250 350 Unit Vdc Vdc Vdc Ade Ade Watts W /°C °C T j, TSfg - 6 5 t o + , facilitate "w orst ca se " design. >M otorola, Inc. 1995 fM) MOTOROLA MJ10020 MJ10021 ELECTRICAL , ) 'CER M J10020 MJ10021 V cE O (su s) 200 250 - - Vdc Symbol Min Typ Max Unit ICEV -
-
OCR Scan
3020 transistor b1 100c UD MJ10020/D

1N4937

Abstract: MJ10020 and Storage Junction Temperature Range W/_C Symbol MJ10020 MJ10021 Unit , Leakage Currents 100 15 CASE 197A­05 TO­204AE (TO­3) · · · · · The MJ10020 and MJ10021 , Diode Designer's MJ10020 MJ10021 SEMICONDUCTOR TECHNICAL DATA Order this document by MJ10020 , Sustaining Voltage (Table 1) (IC = 100 mA, IB = 0) MJ10020 MJ10021 Min Typ Max Unit VCEO , MJ10021 MJ10020 MJ10021 hFE, DC CURRENT GAIN 1000 700 500 VCE , COLLECTOR­EMITTER VOLTAGE
Motorola
Original
1N4937

MJ10021 equivalent

Abstract: SUS CIRCUIT ON Semiconductort MJ10020 MJ10021 SWITCHMODEt Series NPN Silicon Power Darlington , 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for high­voltage , Rating Symbol MJ10020 MJ10021 Unit Collector­Emitter Voltage VCEO 200 250 Vdc , , IC = 0) IEBO - - 175 mAdc Symbol MJ10020 MJ10021 Typ Max Unit , Characteristic ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) MJ10020 MJ10021 MJ10020
ON Semiconductor
Original
MJ10021 equivalent SUS CIRCUIT tektronix 475

mj10021

Abstract: ob 2268 MJ10021 Darlington Power Transistor NPN silicon power darlington transistors with Base-Emitter , ) 38.75 B 2. Emitter Maximum A Pin 1. Base Minimum 10.67 11.18 MJ10021 60 , Characteristic Symbol MJ10021 Collector-Emitter Voltage VCEV 250 Collector-Emitter Voltage , Storage Junction Temperature Range Page 1 Unit V A 05/10/05 V1.1 MJ10021 Darlington , Characteristics Output Capacitance (VCB = 10V, IE = 0, f = 1.0kHz) Page 2 pF 05/10/05 V1.1 MJ10021
Multicomp
Original
ob 2268 60 amp npn darlington power transistors

MJ10020

Abstract: MJ10021 and Storage Junction Temperature Range W/_C Symbol MJ10020 MJ10021 Unit , Leakage Currents 100 15 CASE 197A­05 TO­204AE (TO­3) · · · · · The MJ10020 and MJ10021 , Diode Designer's MJ10020 MJ10021 SEMICONDUCTOR TECHNICAL DATA Order this document by MJ10020 , Sustaining Voltage (Table 1) (IC = 100 mA, IB = 0) MJ10020 MJ10021 Min Typ Max Unit VCEO , MJ10021 MJ10020 MJ10021 hFE, DC CURRENT GAIN 1000 700 500 VCE , COLLECTOR­EMITTER VOLTAGE
Motorola
Original
AN222A

tnpn

Abstract: Darlington 30A 1165905 T-NPN, Si, darlington with base-emitter speedup diode. Features: · Continuous collector current-IC = 60A. Applications: Switching regulators. Inverters. Solenoid and relay drivers. AC and DC motor controls. Description: TO-3 The MJ10021 is a darlington transistor in a TO-3 type package designed for high-voltage, high-speed, power switching in inductive circuits where fall , , TO-3 MJ10021 Disclaimer This data sheet and its contents (the "Information") belong to the
Multicomp
Original
tnpn Darlington 30A reliance dc motor

mj power transistor speedup diode

Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10020 D esigner's TM Data Sheet MJ10021 60 AMPERE , Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10020 and MJ10021 Darlington , 200 300 8.0 60 100 20 30 250 143 1.43 CASE 187A-05 TO-2Q4AE (TO-3) MJ10021 250 350 Unit Vdc , Max Unit MJ 10020 MJ10021 v CEO(sus) 'CEV 200 250 - - Vdc mAdc 'CER 'EBO , Power Transistor Device Data 3-467 M J1 0 0 2 0 MJ10021 TYPICAL ELECTRICAL CHARACTERISTICS hpg
-
OCR Scan
mj power transistor speedup diode
Abstract: /MJ10021 n ·B" iJ f -c§=r .270" (6.86mm) B" BASE BONDING AREA: A p p ro . 0.05 x 0.07" (13 x -
OCR Scan
CCC10021 PTC10020/M PTC10021/MJ10021

Darlington NPN 250W

Abstract: MJ10021 MJ10021 T-NPN, Si, Darlington w/Base-Emitter Speedup Diode Description: The MJ10021 is a Darlington transistor in a TO3 type package designed for high-voltage, high- speed, power switching in inductive circuits where fall time is critical. This device is particularly suited for line operated switchmode applications. Features: D Continuous Collector Current - IC = 60A Applications: D Switching Regulators D Inverters D Solenoid and Relay Drivers D AC and DC Motor Controls Absolute Maximum Ratings
NTE Electronics
Original
Darlington NPN 250W

CASE 221A Style 1

Abstract: BU108 Darlington Transistors with Base-Emitter Speedup Diode Designer's MJ10020 MJ10021 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington , ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ Rating Symbol VCEO VCEV VEB IC ICM IB IBM PD MJ10020 200 300 MJ10021 250 350 Unit Vdc Vdc , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v MJ10020 MJ10021 Max Unit ELECTRICAL CHARACTERISTICS (TC = 25 , Sustaining Voltage (Table 1) (IC = 100 mA, IB = 0) MJ10020 MJ10021 VCEO(sus) ICEV 200 250 - -
Motorola
Original
CASE 221A Style 1 BU108 BU326 2N555 Darlington NPN Silicon Diode BD907 equivalent MJ15012 MJE15030 2N6339 2N6341 2N6497 MJ15011

tektronix type 576 curve tracer

Abstract: tektronix 576 curve tracer MJ10005 NPN 20 10 7.5 8.0 5.6 0.25 100 25 MJ10007 NPN 10 5.0 6.3 62 48 0.28 30 11 MJ10021 NPN 60 30 18 , Diodas 100r MJ10021* 0 1.0 2.0 3.0 40 5.0 6.0 7.0 VF, C-E DIODE FORWARD VOLTAGE (VOLTS) FIGURE 11B â
-
OCR Scan
AN915 tektronix type 576 curve tracer tektronix 576 curve tracer Tracer 176 MR756 line frequency diode AN915/D

MJE340 MOTOROLA

Abstract: MC79L12ACP MMSZ5231BT1 0.11 ONS 849 MPS751 0.29 ONS 844 MJ10021 6.77 ONS — MJL3281A 2.92 ONS 846 MMSZ5232B 0.12 GIS 812
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Original
MOC223-M MJE340 MOTOROLA MC79L12ACP mjl21194 MCR265-006 MC79L05ACP MC78T05CT MJD112 MMBT4401 MOC3021-M MC78T08CT MJD31C

MJ10100

Abstract: all transistor °C v TJ v 100°C 70 60 Turn-Of f Load Line Boundary for MJ10021 50 VBE(off)= 5.0 V 40 , , COLLECTOR-EMITTER VOLTAGE (V) Definition Figure 6. RBSOA Curve (MJ10021) Reverse bias safe operating area
ON Semiconductor
Original
MJ10100 all transistor transistor Common Base configuration on semiconductor AN875 AN875 transistor AN875/D

transistor buv18a

Abstract: motorola transistor cross reference » MJ14002» MJ10020»## MJ10021*##[c] BUS50* BUV18A* MJ14001* MJ14003* MJ11031*## 2N6378. 2N6379* MJ11033
-
OCR Scan
MPSU51 transistor buv18a motorola transistor cross reference BUX98A motorola N6030 BUT13 transistor buv10 MPSU10 MPSU02 MPSU03 MPSU04 MPSU01 MPSU01A

tip1012

Abstract: 2N3055-3 ) Min. @ 25°C MJ10021 2,7 — 60.0 250 75 Min. 15.00 3.50 0.500 30.0 — 250.0 Max. Max. 1 lhfel @ MHz
Allied Electronics Catalog
Original
tip1012 2N3055-3 MJ15024 MJ15025 2n3055 MJ15003 mJE2003 mj150* darlington 221D-02 340G-01 MJF122 MJF127 MJL1302A MJF44H11

mpsu57 cross

Abstract: MJ10020*## 75 min 15 3.5 0.5 30 250 250 MJ10021*##[cl 75 min 15 3.5
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OCR Scan
mpsu57 cross MPSU60 MPSU52 MPSU51A MPSU45 MPSU95 MPSU05

MJ10100

Abstract: AN-875 ) FIGURE 6- RBSOA Curve (MJ10021) Time The variables associated with an RBSOA curve are peak
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OCR Scan
AN-875 mj1010 W. Schultz

MJ1005

Abstract: MD5000A 1165905 T-NPN, Si, darlington with base-emitter speedup diode. Features: · Continuous collector current-IC = 60A. Applications: Switching regulators. Inverters. Solenoid and relay drivers. AC and DC motor controls. Description: TO-3 The MJ10021 is a darlington transistor in a TO-3 type package designed for high-voltage, high-speed, power switching in inductive circuits where fall , , TO-3 MJ10021 Disclaimer This data sheet and its contents (the "Information") belong to the
-
Original
IXTM3N70A IXTM3N70 IXTM3N80 MJ1005 MD5000A 2N3052 MJ12010 IXTP4N90A MD5000 IXTM3N100A 2N6247 MJ13080
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