NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| 5962-3826707MXAC7200 | Intersil Corporation | 128K x 8 EEPROM, MIL-STD-883C, 120ns; Temperature Range: -55°C to 125°C; Package: 32-CerDIP | 
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Mil Spec Method Cond. 100% Screening Precap Visual Mil-Std-883C 2017 High Temp Storage Mil-Std-883C 1008 B Temperature Cycling Mil-Std-883C 1010 B Constant Acceleration Mil-Std-883C 2001 A, Y1 PIND Mil-Std-883C 2020 AorB Seal Test Fine Leak Mil-Std-883C 1014 A Gross Leak Mil-Std-883C 1014 C Radiographic MII-Std-883C 2012 Interim Electrical Per Detail Spec High Temp Burn-In Mil-Std-883C 1015 B. D, E Final Electrical Per Detail Spec External Visual Mil-Std-883C 2009 Quality Conformance Testing Group B ... | OCR Scan |
2 pages, |
SW-582 AT-537 aCOM marking AT-540 883C MILSTD883C- MIL-STD883c MIL-STD-883C AT-537 abstract |
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| Abstract: Mil Spec Method Condition 100% Screening Non-Destructive Bond Pull Mil-Std-883C 2023 Internal Visual Mil-Std-883C 2017 Stabilization Bake Mil-Std-883C 1008 C Temperature Cycling Mil-Std-883C 1010 c Constant Acceleration Mil-Std-883C 2001 A PIND Mil-Std-883C 2020 A Interim Electrical Per Detail Spec High Temp Burn-in (320 Hours) Mil-Std-883C 1015 A-E Final Electrical Per Detail Spec Seal Test Fine Leak Mil-Std-883C 1014 A or B Gross Leak Mil-Std-883C 1014 c Radiographic ... | OCR Scan |
2 pages, |
MIL-STD LA-528 LA-514 MIL-STD-883C DDD114S MIL-STD-883C method 2011 00D1144 00D1144 abstract |
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| Abstract: Electrical Per Detail Spec Stabilization Bake Mil-Std-883 C 1008 B Temperature Cycling Mil-Std-883C 1010 B Constant Acceleration Mil-Std-883C 2001 B PIND Mil-Std-883C 2020 A or B Interim Electrical Per Detail Spec High Temp Burn-In {240 Hours) Mil-Std-883C 1015 B, D, or E Final Electrical Per Detail Spec Radiographic Mil-Std-883C 2012 Seal Test Fine Leak Mil-Std-883C 1014 A Gross Leak Mil-Std-883C 1014 C External Visual Mil-Std-883C 2009 Quality Conformance Tests* Group liC ... | OCR Scan |
2 pages, |
MIL-STD-883C DC-3000 leak MD-1213 MD-1214 MD-1215 MD-1221 MD-12XX MDC-1216 3 DG 1008 MD 202 DC-1500 DC-300 MD-12XX abstract |
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| Abstract: Detail Spec Stabilization Bake Mil-Std-883C 1008 B Temperature Cycling Mil-Std-S83C 1010 B Constant Acceleration Mil-Std-883C 2001 B PIND Mil-Std-883C 2020 AorB Interim Electrical Per Detail Spec High Temp Burn-In (240 Hours) Mil-Std-883C 1015 B, D, or E Final Electrical Per Detail Spec Radiographic Mil-Std-883C 2012 Seal Test Fine Leak Mil-Std-883C 1014 A Gross Leak Mil-Std-883C 1014 C External Visual Mil-Std-883C 2009 Quality Conformance Tests* Group IIC Thermal Shock Mil-Std-202 ... | OCR Scan |
2 pages, |
SW-584 SW-583 SW-582 SW-581 SW-580 SW 1010 MIL-STD883c MIL-STD-883C SW SPDT 00011S2 SW-58X 00011S2 abstract |
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| Abstract: Military Military Military MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C uc d ... | Original |
2 pages, |
WS57C49C-70 MIL-STD883c smd a10 smd marking a7 smd marking A8 WS57C49C WS57C49C-35 WS57C49C-35CMB WS57C49C-35DMB WS57C49C-35TMB WS57C49C-45 WS57C49C-45CMB WS57C49C-55 MIL-STD-883C WS57C49C abstract |
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| Abstract: Military Military Military Military MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C ... | Original |
2 pages, |
WS57C49C-70 smd a10 smd marking a7 smd marking A8 WS57C49C WS57C49C-35 WS57C49C-35CMB WS57C49C-35DMB WS57C49C-35TMB WS57C49C-45 WS57C49C-45CMB WS57C49C-55 MIL-STD-883C WS57C49C abstract |
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| Abstract: Military Military Military Military MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C ... | Original |
2 pages, |
smd transistor marking A3 smd transistor marking A10 smd marking A8 smd marking a7 SMD a7 Transistor smd a10 MIL-STD-883C A12 marking smd transistor marking A11 WS57C49C WS57C49C abstract |
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| Abstract: 3.10 2.00 G 10.50 Specify Environmental & Mechanical Temperature MIL-STD-883C Method 1010.7 Cycle Shock MIL-STD-883C Method 2002 Vibration MIL-STD-883C Method 2007.2 Humidity JIS C 5021-22 Gross Leak MIL-STD-883C Test Method 1014.9 Condition A K L 2.20 2.00 M 330 N ... | Original |
1 pages, |
RH20 MIL-STD-883C 883C datasheet abstract |
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| Abstract: Heat: MIL-STD-883C, Method 2002.3, Condition B MIL-STD-883C, Method 2003.5 MIL-STD-202F MIL-STD-202F, Method 211A, Conditions A and C MIL-STD-883C, Method 2007.1, Condition A MIL-STD-202F MIL-STD-202F, Method 215C MIL-STD-202F MIL-STD-202F, Method , , Method 1014.8, Condition CI MIL-STD-883C, Method 1014.8, Condition A2, ... | OCR Scan |
1 pages, |
xtalosc MIL-STD-883C ncl 039 nymph datasheet abstract |
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| Abstract: to Soldering Heat: MIL-STD- 883C, Method 2002.3, Condition B MIL-STD-883C, Method 2003.3 MIL-STD-202F MIL-STD-202F, Method 211A, Conditions A and C MIL-STD-883C, Method 2007.1, Condition A MIL-STD-202F MIL-STD-202F, Method , Shock: Moisture Resistance: MIL-STD-883C, Method 1014.5, Condition C MIL-STD-883C, Method 1014.5, Condition A2, ... | OCR Scan |
1 pages, |
xtalosc MIL-STD-883C MIL-STD-202f method 215B MIL-STD-883C method 2007.1 datasheet abstract |
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| Abstract: In-Line Package) 1. Solderability MIL-STD-883C Method 2003.5 Eight Hours Steam Age 2. Mark , INFORMATION PDIP (Plastic Dual In-Line Package) (Continued) 1. Solderability MIL-STD-883C Method , ) 1. Solderability MIL-STD-883C Method 2003.5 Eight Hours Steam Age 2. Mark Permanency 3X , (Plastic Dual In-Line Package) (Continued) 1. Solderability MIL-STD-883C Method 2003.5 Eight , Solderability MIL-STD-883C Method 2003.5 Eight Hours Steam Age 2. Mark Permanency 3X soak into Alpha ... | Original |
50 pages, |
Z84C90 ceramic QFP Package 100 lead 64 CERAMIC LEADLESS CHIP CARRIER LCC 10X10 84C00 MIL-STD-883C CPS95CO0125 Z84C0010PEC CPS95CO0125 abstract |
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| Abstract: Mechanical Temperature MIL-STD-883C Method 1010.7 Cycle Shock MIL-STD-883C Method 2002 Vibration MIL-STD-883C Method 2007.2 Humidity JIS C 5021-22 Gross Leak MIL-STD-883C Test Method 1014.9 Condition A ... | Original |
1 pages, |
RH20 MIL-STD-883C ECM11E 8 MHz Crystal, HC49/U Case 4433,619 22.1184 HC49/U HC49/U abstract |
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| Abstract: Shock Vibration Solderability Seal integrity MIL-STD-883C, Method 2002, Con B MIL-STD-883C, Method 2007, Con A MIL-STD-883C, Method 2003 MIL-STD-883C, Method 2014, Con C&A2 2002/95/EC 2002/95/EC RoHS ... | Original |
1 pages, |
MIL-STD-883C TX6-104H TX6-104H abstract |
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| Abstract: integrity MIL-STD-883C, Method 2002, Con B MIL-STD-883C, Method 2007, Con A MIL-STD-883C, Method 2003 MIL-STD-883C, Method 2014, Con C&A2 2002/95/EC 2002/95/EC RoHS compliant QuartzCom AG sales@quartzcom.com ... | Original |
1 pages, |
VTE-205A MIL-STD-883C VTE-205A abstract |
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| Abstract: Vibration Solderability Seal integrity MIL-STD-883C, Method 2002, Con B MIL-STD-883C, Method 2007, Con A MIL-STD-883C, Method 2003 MIL-STD-883C, Method 2014, Con C&A2 2002/95/EC 2002/95/EC RoHS compliant ... | Original |
1 pages, |
MIL-STD-883C TXE-205A TXE-205A abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| TPS1120 TPS1120 TPS1120 TPS1120, TPS1120Y TPS1120Y TPS1120Y TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A SLVS080A SLVS080A SLVS080A - MARCH 1994 - REVISED AUGUST 1995 Copyright © 1995, Texas Instruments Incorporated features Low r DS(on) . . . 0.18 at V GS = -10 V 3-V Compatible Requires No External V CC TTL and CMOS Compatible Inputs V GS(th) = -1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C, Method 3015 LinBICMOS is a trademark of Texas Instruments Incorporated description The www.datasheetarchive.com/files/texas-instruments/data/html/slvs080a.htm |
Texas Instruments | 31/05/1997 | 2.28 Kb | HTM | slvs080a.htm |
| TPS1100 TPS1100 TPS1100 TPS1100, TPS1100Y TPS1100Y TPS1100Y TPS1100Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS078C SLVS078C SLVS078C SLVS078C - DECEMBER 1993 - REVISED AUGUST 1995 Copyright © 1995, Texas Instruments Incorporated features Low r DS(on) . . . 0.18 Typ at V GS = -10 V 3 V Compatible Requires No External V CC TTL and CMOS Compatible Inputs V GS(th) = -1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C, Method 3015 LinBICMOS is a trademark of Texas Ins www.datasheetarchive.com/files/texas-instruments/data/html/slvs078c.htm |
Texas Instruments | 31/05/1997 | 2.61 Kb | HTM | slvs078c.htm |
| SN74BCT757 SN74BCT757 SN74BCT757 SN74BCT757 OCTAL BUFFER/DRIVERWITH OPEN-COLLECTOR OUTPUTS SCBS041D SCBS041D SCBS041D SCBS041D - NOVEMBER 1989 - REVISED NOVEMBER 1993 features BiCMOS Design Significantly Reduces I CCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Open-Collector Outputs Drive Bus Lines or Buffer Memory Address Registers Package Options Include Plastic Small-Outline (DW) www.datasheetarchive.com/files/texas-instruments/data/html/scbs041d.htm |
Texas Instruments | 17/11/1997 | 1.35 Kb | HTM | scbs041d.htm |
| SN64BCT125A SN64BCT125A SN64BCT125A SN64BCT125A QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS SCBS052B SCBS052B SCBS052B SCBS052B - JULY 1990 - REVISED MAY 1994 features State-of-the-Art BiCMOS Design Significantly Reduces I CCZ High-Impedance State During Power-Up and Power-Down 3-State Outputs Drive Bus Lines or Buffer-Memory Address Registers ESD Protection Exceeds 2000 V Per MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C Method 3015 Package Options Include Plastic Small- www.datasheetarchive.com/files/texas-instruments/data/html/scbs052b.htm |
Texas Instruments | 17/11/1997 | 1.28 Kb | HTM | scbs052b.htm |
| SN64BCT125A SN64BCT125A SN64BCT125A SN64BCT125A QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS SCBS052B SCBS052B SCBS052B SCBS052B - JULY 1990 - REVISED MAY 1994 features State-of-the-Art BiCMOS Design Significantly Reduces I CCZ High-Impedance State During Power-Up and Power-Down 3-State Outputs Drive Bus Lines or Buffer-Memory Address Registers ESD Protection Exceeds 2000 V Per MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C Method 3015 Package Options Include Plastic Small- www.datasheetarchive.com/files/texas-instruments/data/html/scbs052b-v1.htm |
Texas Instruments | 18/08/1997 | 1.28 Kb | HTM | scbs052b-v1.htm |
| SN64BCT126A SN64BCT126A SN64BCT126A SN64BCT126A QUADRUPLE BUS BUFFER GATE WITH 3-STATE OUTPUTS SCBS051B SCBS051B SCBS051B SCBS051B - AUGUST 1990 - REVISED MAY 1994 features State-of-the-Art BiCMOS Design Significantly Reduces I CCZ 3-State Outputs Drive Bus Lines or Buffer-Memory Address Registers ESD Protection Exceeds 2000 V Per MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C Method 3015 High-Impedance State During Power-Up and Power-Down Package Options Include Plastic Smal www.datasheetarchive.com/files/texas-instruments/data/html/scbs051b.htm |
Texas Instruments | 18/08/1997 | 1.16 Kb | HTM | scbs051b.htm |
| Product Folder:TPS1120 TPS1120 TPS1120 TPS1120, DUAL P-CHANNEL ENHANCEMENENT-MODE MOSFET >> Semiconductor Home > Products > Analog & Mixed-Signal > Power Management > Power Distribution Switches > USB, PMOS > TPS1120 TPS1120 TPS1120 TPS1120, DUAL P-CHANNEL ENHANCEMENENT-MODE MOSFET Device Status: Active > Description > Features > Datasheets > Pricing/Samples/Availability > Application Notes > Developmen www.datasheetarchive.com/files/texas-instruments/data/wwwti~1.com/sc/docs/products/analog/tps112~1.htm |
Texas Instruments | 28/01/2000 | 14.71 Kb | HTM | tps112~1.htm |
| Product Folder:TPS1120 TPS1120 TPS1120 TPS1120, DUAL P-CHANNEL ENHANCEMENENT-MODE MOSFET >> Semiconductor Home > Products > Analog & Mixed-Signal > Power Management > Power Distribution Switches > USB, PMOS > TPS1120 TPS1120 TPS1120 TPS1120, DUAL P-CHANNEL ENHANCEMENENT-MODE MOSFET Device Status: Active > Description > Features > Datasheets > Pricing/Samples/Availability > Application Notes > Developmen www.datasheetarchive.com/files/texas-instruments/data/www.ti.com/sc/docs/products/analog/tps1120.html |
Texas Instruments | 29/01/2000 | 14.71 Kb | HTML | tps1120.html |
| Data Sheet Abstract: TPS1120 TPS1120 TPS1120 TPS1120:DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS TPS1120 TPS1120 TPS1120 TPS1120, TPS1120Y TPS1120Y TPS1120Y TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS080A SLVS080A SLVS080A SLVS080A - MARCH 1994 - REVISED AUGUST 1995 features Low r DS(on) . . . 0.18 at V GS = -10 V 3-V Compatible Requires No External V CC TTL and CMOS Compatible Inputs V GS(th) = -1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C, Method 3015 LinBICMOS is a trademark of Texas Instruments Incorpo www.datasheetarchive.com/files/texas-instruments/sc/psheets/abstract/datasht/slvs080a.htm |
Texas Instruments | 01/06/1998 | 6.19 Kb | HTM | slvs080a.htm |
| Data Sheet Abstract: TPS1100 TPS1100 TPS1100 TPS1100:SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS TPS1100 TPS1100 TPS1100 TPS1100, TPS1100Y TPS1100Y TPS1100Y TPS1100Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS078C SLVS078C SLVS078C SLVS078C - DECEMBER 1993 - REVISED AUGUST 1995 features Low r DS(on) . . . 0.18 Typ at V GS = -10 V 3 V Compatible Requires No External V CC TTL and CMOS Compatible Inputs V GS(th) = -1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C MIL-STD-883C MIL-STD-883C MIL-STD-883C, Method 3015 www.datasheetarchive.com/files/texas-instruments/sc/psheets/abstract/datasht/slvs078c.htm |
Texas Instruments | 01/06/1998 | 6.52 Kb | HTM | slvs078c.htm |