MIL-STD-750E MIL-STD-750D MIL-PRF-19500 TT-I-735 MIL-STD-202 MIL-STD-1686 - Datasheet Archive

 

measures necessary to comply with this revision shall be completed by 20 June 2007 INCH - POUND MIL-STD-750E 20 November 2006

 

The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 June 2007 INCH - POUND MIL-STD-750E MIL-STD-750E 20 November 2006 SUPERSEDING MIL-STD-750D MIL-STD-750D 28 FEBRUARY 1995 DEPARTMENT OF DEFENSE TEST METHOD STANDARD TEST METHODS FOR SEMICONDUCTOR DEVICES AMSC N/A FSC 5961 MIL-STD-750E MIL-STD-750E FOREWARD 1. This Standard is approved for use by all Departments and Agencies of the Department of Defense. 2. This entire standard has been revised. 3. Comments, suggestions, or questions on this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 E. Broad Street, Columbus, OH 43218-5000, or emailed to semiconductor@dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http://assist.daps.dla.mil. ii MIL-STD-750E MIL-STD-750E Section 1. 1.1 1.2 1.2.1 1.2.2 1.3 2. 2.1 2.2 2.2.1 2.2.2 2.3 2.4 3. 3.1 3.1.1 Paragraph CONTENTS Page SCOPE . 1 Purpose . Numbering system. Classification of tests . Revisions . Method of reference . 1 1 1 1 1 APPLICABLE DOCUMENTS. 2 General . Government documents. Specifications, standards, and handbooks. Other Government documents, drawings, and publications. Non-Government publications. Order of precedence . 2 2 2 2 3 4 DEFINITIONS . 4 Abbreviations, symbols, and definitions . 4 Abbreviations used in this standard . 4 4. GENERAL REQUIREMENTS . 6 4.1 4.1.1 4.1.2 4.1.3 4.1.3.1 4.1.4 4.2 4.3 4.3.1 4.3.2 4.3.2.1 4.3.2.2 4.3.3 4.3.3.1 4.3.4 4.3.5 4.3.6 4.3.7 4.3.7.1 4.3.7.2 4.4 4.4.1 4.5 4.6 4.7 4.8 4.9 4.10 Test conditions. 6 Permissible temperature variation in environmental chambers. 6 Electrical test frequency . 6 Accuracy . 6 Test methods and circuits . 7 Calibration requirements . 7 Orientations. 7 General precautions. 8 Transients . 8 Test conditions for electrical measurements . 8 Steady-state dc measurements (method 4000) . 8 Pulse measurements . 8 Test circuits. 8 Test method variation . 8 Soldering. 9 Order of connection of leads . 9 Radiation precautions . 9 Handling precautions . 9 UHF and microwave devices . 9 Electrostatic discharge sensitive (ESDS) devices . 9 Continuity verification of burn-in and life tests . 9 Bias interruption. . 9 Requirements for HTRB and burn-in . 10 Bias requirements . 10 Destructive tests . 11 Nondestructive tests . 12 Laboratory suitability . 13 Recycled, recovered, or environmentally preferable materials. 13 5. DETAILED REQUIREMENTS . 13 iii MIL-STD-750E MIL-STD-750E Section Paragraph CONTENTS Page 6. NOTES. 13 6.1 Intended Use. 13 6.2 International standardization agreement. 13 6.3 Subject term (key word) listing . 13 6.4 Changes from previous issue. 13 Figure 1. 2. Page Orientation of noncylindrical semiconductor device to direction of accelerating force . 7 Orientation of cylindrical semiconductor device to direction of accelerating force. 8 iv MIL-STD-750E MIL-STD-750E Test Methods Method number Title Environmental tests (1000 series). 1001.2 Barometric pressure (reduced). 1011.1 Immersion. 1015.1 Steady-state primary photocurrent irradiation procedure (electron beam). 1016 Insulation resistance. 1017.1 Neutron irradiation. 1018.3 Internal gas analysis. 1019.5 Steady-state total dose irradiation procedure. 1020.2 Electrostatic discharge sensitivity (ESDS) classification. 1021.3 Moisture resistance. 1022.5 Resistance to solvents. 1026.5 Steady-state operation life. 1027.3 Steady-state operation life (sample plan). 1031.5 High-temperature life (nonoperating). 1032.2 High-temperature (nonoperating) life (sample plan). 1033 Reverse voltage leakage stability 1036.3 Intermittent operation life. 1037.2 Intermittent operation life (sample plan). 1038.4 Burn-in (for diodes, rectifiers, and zeners). 1039.4 Burn-in (for transistors). 1040 Burn-in (for thyristors (controlled rectifiers). 1041.3 Salt atmosphere (corrosion). 1042.3 Burn-in and life test for power MOSFET's or insulated gate bipolar transistors (IGBT). 1046.3 Salt spray (corrosion). 1048 Blocking life. 1049 Blocking life (sample plan). 1051.6 Temperature cycling (air to air). 1054.1 Potted environment stress test. 1055.1 Monitored mission temperature cycle. 1056.7 Thermal shock (liquid to liquid). 1057.1 Resistance to glass cracking. 1061.1 Temperature measurement, case and stud. 1066.1 Dew point. 1071.8 Hermetic seal. 1080 Single event burnout and single event gate rupture test. v MIL-STD-750E MIL-STD-750E Test Methods Method number Title Mechanical characteristics tests (2000 series). 2005.2 Axial lead tensile test. 2006 Constant acceleration. 2016.2 Shock. 2017.2 Die attach integrity. 2026.11 Solderability. 2031.3 Resistance to soldering heat. 2036.4 Terminal strength. 2037.1 Bond strength. 2046.2 Vibration fatigue. 2051.1 Vibration noise. 2052.4 Particle impact noise detection (PIND) test. 2056 Vibration, variable frequency. 2057.2 Vibration, variable frequency (monitored). 2066 Physical dimensions. 2068 External visual for nontransparent, glass-encased, double plug, noncavity, axial leaded diodes. 2069.2 Pre-cap visual, power MOSFET's. 2070.2 Pre-cap visual microwave discrete and multichip transistors. 2071.6 Visual and mechanical examination. 2072.6 Internal visual transistor (pre-cap) inspection. 2073.1 Internal inspection for die (semiconductor diode). 2074.4 Internal visual inspection (discrete semiconductor diodes). 2075.1 Decap internal visual design verification. 2076.3 Radiography. 2077.3 Scanning electron microscope (SEM) inspection of metallization. 2078 Internal visual for wire bonded diodes/rectifiers 2081 Forward instability, shock (FIST). 2082 Backward instability, vibration (BIST). 2101.1 DPA procedures for diodes. 2102 DPA for wire bonded devices. 2103 Design verification for surface mount devices vi MIL-STD-750E MIL-STD-750E Test Methods Method number Title Electrical characteristics tests for bipolar transistors (3000 series). 3001.1 Breakdown voltage, collector to base. 3005.1 Burnout by pulsing. 3011.2 Breakdown voltage, collector to emitter. 3015 Drift. 3020 Floating potential. 3026.1 Breakdown voltage, emitter to base. 3030 Collector to emitter voltage. 3036.1 Collector to base cutoff current. 3041.1 Collector to emitter cutoff current. 3051 Safe operating area (continuous dc). 3052 Safe operating area (pulsed). 3053 Safe operating area (switching). 3061.1 Emitter to base cutoff current. 3066.1 Base emitter voltage (saturated or nonsaturated). 3071 Saturation voltage and resistance. 3076.1 Forward-current transfer ratio. 3086.1 Static input resistance. 3092.1 Static transconductance. Circuit-performance and thermal resistance measurements (3100 series). 3100 Junction temperature measurement 3101.4 Thermal impedance testing of diodes. 3103 Thermal impedance measurements for insulated gate bipolar transistor (delta gate-emitter on voltage method). 3104 Thermal impedance measurements of GaAs MOSFET's (constant current forward-biased gate voltage method). 3105.1 Measurement method for thermal resistance of a bridge rectifier assembly. 3126 Thermal resistance (collector-cutoff-current method). 3131.5 Thermal impedance measurements for bipolar transistors (delta base-emitter voltage method). 3132 Thermal resistance (dc forward voltage drop, emitter base, continuous method). 3136 Thermal resistance (forward voltage drop, collector to base, diode method). 3141 Thermal response time. 3146.1 Thermal time constant. 3151 Thermal resistance, general. 3161.1 Thermal impedance measurements for vertical power MOSFET's (delta source-drain voltage method). 3181 Thermal resistance for thyristors. Low frequency tests (3200 series). 3201.1 Small-signal short-circuit input impedance. 3206.1 Small-signal short-circuit forward-current transfer ratio. 3211 Small-signal open-circuit reverse-voltage transfer ratio. 3216 Small-signal open-circuit output admittance. 3221 Small-signal short-circuit input admittance. 3231 Small-signal short-circuit output admittance. 3236 Open circuit output capacitance. 3240.1 Input capacitance (output open-circuited or short-circuited). 3241 Direct interterminal capacitance. 3246.1 Noise figure. 3251.1 Pulse response. 3255 Large signal power gain. 3256 Small signal power gain. 3261.1 Extrapolated unity gain frequency. 3266 Real part of small-signal short circuit input impedance. vii MIL-STD-750E MIL-STD-750E Test Methods Method number Title High frequency tests (3300 series) 3301 Small-signal short-circuit forward-current transfer-ratio cutoff frequency. 3306.4 Small-signal short-circuit forward-current transfer ratio. 3311 Maximum frequency of oscillation. 3320 RF power output, RF power gain, and collector efficiency. Electrical characteristics tests for MOS field-effect transistors (3400 series) 3401.1 Breakdown voltage, gate to source. 3402 Mosfet gate equivalent series resistance 3403.1 Gate to source voltage or current. 3404 MOSFET threshold voltage. 3405.1 Drain to source on-state voltage. 3407.1 Breakdown voltage, drain to source. 3411.1 Gate reverse current. 3413.1 Drain current. 3415.1 Drain reverse current. 3421.1 Static drain to source on-state resistance. 3423 Small-signal, drain to source on state resistance. 3431 Small-signal, common-source, short-circuit, input capacitance. 3433 Small-signal, common-source, short-circuit, reverse-transfer capacitance. 3453 Small-signal, common-source, short-circuit, output admittance. 3455 Small-signal, common-source, short-circuit, forward transadmittance. 3457 Small-signal, common-source, short-circuit, reverse transfer admittance. 3459 Pulse response (FET). 3461 Small-signal, common-source, short-circuit, input admittance. 3469 Repetitive unclamped inductive switching. 3470.2 Single pulse unclamped inductive switching. 3471.2 Gate charge. 3472.2 Switching time test. 3473.1 Reverse recovery time (trr) and recovered charge (Qrr) for power MOSFET (drain-to-source) and power rectifiers with trr · 100 ns. 3474.1 Safe operating area for power MOSFET's or insulated gate bipolar transistors. 3475.1 Forward transconductance (pulsed dc method) of power MOSFET's or insulated gate bipolar transistors. 3476 Commutating diode for safe operating area test procedure for measuring dv/dt during reverse recovery of power MOSFET transistors or insulated gate bipolar transistors. 3477.1 Measurement of insulated gate bipolar transistor total switching losses and switching times. 3478.1 Power transistor electrical dose rate test method. 3479 Short circuit withstand time. 3490 Clamped inductive switching safe operating area for MOS gated power transistors. Electrical characteristics tests for Gallium Arsenide transistors (3500 series) 3501 Breakdown voltage, drain to source. 3505 Maximum available gain of a GaAs FET. 3510 1 dB compression point of a GaAs FET. 3570 GaAs FET forward gain (Mag S21). 3575 Forward transconductance. viii MIL-STD-750E MIL-STD-750E Test Methods Method number Title Electrical characteristics tests for diodes (4000 series). 4000 Condition for measurement of diode static parameters. 4001.1 Capacitance. 4011.4 Forward voltage. 4016.4 Reverse current leakage. 4021.2 Breakdown voltage (diodes). 4022 Breakdown voltage (voltage regulators and voltage-reference diodes). 4023.2 Scope display. 4026.3 Forward recovery voltage and time. 4031.4 Reverse recovery characteristics. 4036.1 "Q" for voltage variable capacitance diodes. 4041.2 Rectification efficiency. 4046.1 Reverse current, average. 4051.3 Small-signal reverse breakdown impedance. 4056.2 Small-signal forward impedance. 4061.1 Stored charge. 4064 Avalanche energy test for schottky diodes 4065 Peak reverse power test 4066.4 Surge current. 4071.1 Temperature coefficient of breakdown voltage. 4076.1 Saturation current. 4081.3 Thermal resistance of lead mounted diodes (forward voltage, switching method). Electrical characteristics tests for microwave diodes (4100 series) 4101.3 Conversion loss. 4102 Microwave diode capacitance. 4106 Detector power efficiency. 4111.1 Figure of merit (current sensitivity). 4116.1 IF impedance. 4121.2 Output noise ratio. 4126.2 Overall noise figure and noise figure of the IF amplifier. 4131.1 Video resistance. 4136.1 Standing wave ratio (SWR). 4141.1 Burnout by repetitive pulsing. 4146.1 Burnout by single pulse. 4151 Rectified microwave diode current. Electrical characteristics tests for thyristors (controlled rectifiers) (4200 series) 4201.2 Holding current. 4206.1 Forward blocking current. 4211.1 Reverse blocking current. 4216 Pulse response. 4219 Reverse gate current. 4221.1 Gate-trigger voltage or gate-trigger current. 4223 Gate-controlled turn-on time. 4224 Circuit-commutated turn-off time. 4225 Gate-controlled turn-off time. 4226.1 Forward "on" voltage. 4231.2 Exponential rate of voltage rise. ix MIL-STD-750E MIL-STD-750E Test Methods Method number Title Electrical characteristics tests for tunnel diodes (4300 series) 4301 Junction capacitance. 4306.1 Static characteristics of tunnel diodes. 4316 Series inductance. 4321 Negative resistance. 4326 Series resistance. 4331 Switching time. High reliability space application tests (5000 series) 5001.2 Wafer lot acceptance testing. 5002 Capacitance-voltage measurements to determine oxide quality. 5010 Clean room and workstation airborne particle classification and measurement. x MIL-STD-750E MIL-STD-750E 1. SCOPE 1.1 Purpose. This standard establishes uniform methods for testing semiconductor devices, including basic environmental tests to determine resistance to deleterious effects of natural elements and conditions surrounding military operations, and physical and electrical tests. For the purpose of this standard, the term "devices" includes such items as transistors, diodes, voltage regulators, rectifiers, tunnel diodes, and other related parts. This standard is intended to apply only to semiconductor devices. The test methods described herein have been prepared to serve several purposes: a. To specify suitable conditions obtainable in the laboratory that give test results equivalent to the actual service conditions existing in the field, and to obtain reproducibility of the results of tests. The tests described herein are not to be interpreted as an exact and conclusive representation of actual service operation in any one geographic location, since it is known that the only true test for operation in a specific location is an actual service test at that point. b. To describe in one standard all of the test methods of a similar character which now appear in the various joint-services semiconductor device specifications, so that these methods may be kept uniform and thus result in conservation of equipment, man-hours, and testing facilities. In achieving this objective, it is necessary to make each of the general tests adaptable to a broad range of devices. c. The test methods described herein for environmental, physical, and electrical testing of devices shall also apply, when applicable, to parts not covered by an approved military sheet-form standard, specification sheet, or drawing. 1.2 Numbering system. The test methods are designated by numbers assigned in accordance with the following system: 1.2.1 Classification of tests. The tests are divided into five areas. Test methods numbered 1001 to 1999 inclusive, cover environmental tests; those numbered 2001 to 2999 inclusive, cover mechanical- characteristics tests. Electrical- characteristics tests are covered in two groups; 3001 to 3999 inclusive, covers tests for transistors and 4001 to 4999 inclusive, covers tests for diodes. Test methods numbered 5000 to 5999 inclusive, are for high reliability space applications. 1.2.2 Revisions. Revisions are numbered consecutively using a period to separate the test method number and the revision number. For example, 4001.1 is the first revision of test method 4001. 1.3 Method of reference. When applicable, test methods contained herein shall be referenced in the individual specification by specifying the method number of this standard, and the details required in the summary of the applicable method. To avoid the necessity for changing specifications that refer to this standard, the revision number should not be used when referencing test methods. (For example: use 4001, not 4001.1.) 1 MIL-STD-750E MIL-STD-750E 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this standard. This section does not include documents cited in other sections of this standard or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. * 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 MIL-PRF-19500 TT-I-735 TT-I-735 - Semiconductor Devices, General Specification for. Isopropyl Alcohol DEPARTMENT OF DEFENSE STANDARDS MIL-STD-202 MIL-STD-202 MIL-STD-1686 MIL-STD-1686 - MIL-PRF-680 MIL-PRF-680 Test Method Standard Electronic and Electrical Component Parts. Electrostatic Discharge Control Program for Protection of Electrical and Electronic Parts, Assemblies and Equipment (Excluding Electrically Initiated Explosive Devices) (Metric). Degreasing solvent - DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-263 MIL-HDBK-263 - Electrostatic Discharge Control Handbook for Protection of Electrical and Electronic Parts, Assemblies and Equipment (Excluding Electrically Initiated Explosive Devices) (Metric). (Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch or http://assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.2.2 Other Government documents, drawings, and publications. The following other Government documents, drawings, and publications form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DRAWINGS - JAN 103-JAN 103-JAN 107-JAN 107-JAN 124-JAN 124-JAN 174-JAN 174-JAN 233-JAN 233-JAN 234-JAN 234-JAN 266-JAN 266-JAN - Filter for Testing Crystal Rectifier 1N23, 1N23A 1N23A and 1N23B 1N23B. Mixer for Testing Crystal Rectifier Type 1N26. Mixer and Coupling Circuit for Crystal Rectifiers 1N21B 1N21B. Mixer for Electron Tube Type 1N53. Loss Measuring Equipment for 1N25 Crystals Schematic Diagram. Loss Measuring Equipment for 1N25 Crystals Bill of Material. Mixer Holder, Narrow, Band, for 1N263 1N263. DRAWINGS - DESC ASSEMBLY B66054 B66054 C64169 C64169 C65017 C65017 C65042 C65042 C65101 C65101 C66053 C66053 C66058 C66058 D64100 D64100 D65019 D65019 D65064 D65064 - Adaptor For Burn-Out Test. Sliding Load (S-Band) Used with D64100 D64100. Assembly, Tri-polar Diode Holder. Sliding Load (X-Band) Used with D65019 D65019. Sliding Load (Ku-Band) Used with D65064 D65064. Mixer Holder, Narrow Band, for 1N1838 1N1838. Burn-Out Tester For Microwave Diodes. Diode Test Holder, 3,060 MHz (S-Band). Diode Test Holder, 9,375 GHz (X-Band). Diode Test Holder, 16 GHz (Ku-Band). (Copies of these documents are available online at http://www.dscc.dla.mil/Programs/MilSpec or from the Defense Supply Center, DSCC-VAC, P.O. Box 3990, Columbus, Ohio 43218.) 2 MIL-STD-750E MIL-STD-750E * 2.3 Non-Government publications. The following documents form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ANSI/NCSL-Z540-1-1994 ANSI/NCSL-Z540-1-1994 (Copies of this document are available online at http://www.ansi.org or from the American National Standards Institute, 1819 L Street, NW, Suite 600, Washington, DC 20036) ASME Y14.38M - Abbreviations and Acronyms (Copies of this document are available online at http://www.asme.org or from the ASME International, Three Park Avenue, New York, NY 10016-5990) ASTM Test Method D1120 D1120 - Standard Test Method for Boiling Point of Engine Coolants ASTM Test Method D1331 D1331 - Standard Test Methods for Surface and Interfacial Tension of Solutions of Surface-Active Agents ASTM Test Method D2109 D2109 - Standard Test Methods for Nonvolatile Matter in Halogenated Organic Solvents and Their Admixtures ASTM Test Method D877 - Standard Test Method for Dielectric Breakdown Voltage of Insulating Liquids Using Disk Electrodes ASTM Test Method D941 - Standard Test Method for Density and Relative Density (Specific Gravity) of Liquids by Lipkin Bicapillary Pycnometer ASTM Test Method D971 - Standard Test Method for Interfacial Tension of Oil Against Water by the Ring Method ASTM Test Method F134 - Standard Test Methods for Determining Hermeticity of Electron Devices with a Helium Mass Spectrometer Leak Detector ASTM Test Method F50 - Standard Practice for Continuous Sizing and Counting of Airborne Particles in Dust-Controlled Areas and Clean Rooms Using Instruments Capable of Detecting Single Sub-Micrometre and Larger Particles ASTM Test Method F25 - Standard Test Method for Sizing and Counting Airborne Particulate Contamination in Cleanrooms and Other Dust-Controlled Areas ASTM Test Method F-1192 F-1192 - Standard Guide for he Measurement of Single-Event Phenomena from Heavy Ion Irradiation of Semiconductor Devices (Copies of these documents are available online at http://www.astm.org or from the American Society for Testing and Materials, P O Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959) EIA/JESD57 EIA/JESD57 - Test Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy Ion Irradiation. (Copies of this document are available online at http://www.eia.org or from the Electronic Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201-3834; or from IPC, 2215 Sanders Road, Northbrook, IL 60062-6135.) NBS Handbook 59 NBS Handbook 73 NBS Handbook 76 - Permissible Dose From External Sources of Ionizing Radiation, Recommendations of National Committee on Radiation Protection. - Protection Against Radiations from Sealed Gamma Sources. - Medical X-Ray Protection Up to 3 Million Volts. (Application for copies should be addressed to the Superintendent of Documents, Washington, DC 20402.) SAE-ARP-743 SAE-ARP-743 - Procedure for the Determination of Particulate Contamination of Air in Dust Controlled Spaces by the Manual Particle Count Method (Copies of these documents are available online at http://www.sae.org or from the SAE World Headquarters 400 Commonwealth Drive, Warrendale, PA 15096-0001 USA) Standard Handbook for Electrical Engineers. (Application for copies should be addressed to the McGraw-Hill Book Company, Inc., New York, N.Y. 42840.) 3 MIL-STD-750E MIL-STD-750E 2.4 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. DEFINITIONS 3.1 Abbreviations, symbols, and definitions. For the purposes of this standard, the abbreviations, symbols, and definitions specified in MIL-PRF-19500 MIL-PRF-19500, ASME Y14.38M, and herein shall apply. 3.1.1 Abbreviations used in this standard. Abbreviations used in this standard are defined as follows: a. ATE - Automatic test equipment. b. BIST - Backward instability shock test. c CFM - Cubic Feet per Minute. d. DPA - Destructive physical analysis. e. DUT - Device under test. f. ESD - Electrostatic discharge. g. ESDS - Electrostatic discharge sensitivity. h. FET - Field-effect transistor. i. FIST - Forward instability shock test. j. FWHM - Full-width half-max. k. GaAs - Gallium Arsenide. l. HTRB - High temperature reverse bias. m. Hz - Hertz. n. IF - Intermediate frequency. o IGBT - Insulated gate bipolar transistor. p. LCC - Leadless chip carrier. q. LINAC - Linear accelerator. r. mH - Microhenries. s. MOSFET - Metal oxide semiconductor field-effect transistor. t. NIST - National Institute of Standards and Technology. u. ns - Nanosecond. v. PIND - Particle impact noise detection. w. pF - Picofarad. 4 MIL-STD-750E MIL-STD-750E x. RH - Relative humidity. y. SEM - Scanning electron microscope. z. SOA - Safe operating area. aa. SSOP - Steady-state operating power. bb. STU - Sensitivity test unit. cc. SWR - Standing wave ratio. dd. TLD - Thermoluminescence dosimetry. ee. TSP - Temperature sensitive parameter. ff. UHF - Ultra high frequency. 5 MIL-STD-750E MIL-STD-750E 4. GENERAL REQUIREMENTS 4.1 Test conditions. Unless otherwise specified herein or in the individual specification, all measurements and tests shall be made at thermal equilibrium at an ambient temperature of 25°C ±3°C and at ambient atmospheric pressure and relative humidity and the specified test condition C (at environmentally elevated and reduced temperatures) shall have a tolerance of ±3 percent or +3°C, whichever is greater. Whenever these conditions must be closely controlled in order to obtain reproducible results, the referee conditions shall be as follows: Temperature 25°C ±1°C, relative humidity 50 ±5 percent, and atmospheric pressure from 650 to 800 millimeters of mercury. Unless otherwise specified in the detail test method, for mechanical test methods, 2000 series, the ambient temperature may be 25°C ±10°C. 4.1.1 Permissible temperature variation in environmental chambers. When chambers are used, specimens under test shall be located only within the working area defined as follows: a. Temperature variation within working area: The controls for the chamber shall be capable of maintaining the temperature of any single reference point within the working area within ±2°C or ±4 percent, whichever is greater. b. Space variation within working area: Chambers shall be so constructed that, at any given time, the temperature of any point within the working area shall not deviate more than ±3°C or ±3 percent, whichever is greater, from the reference point, except for the immediate vicinity of specimens generating heat. c. Chambers with specified minimum temperatures (such as those used in burn-in and life tests): When test requirements involve a specified minimum test temperature, the controls and chamber construction shall be such that the temperature of any point within the working area shall not deviate more than +8°C, -0°C; or +8 percent, -0 percent, whichever is greater, from the specified minimum temperature, except for the immediate vicinity of the specimens generating heat. 4.1.2 Electrical test frequency. Unless otherwise specified, the electrical test frequency shall be 1,000 ±25 Hertz (Hz). 4.1.3 Accuracy. The specified limits are for absolute (true) values, obtained with the specified (nominal) test conditions. Proper allowance shall be made for measurement errors (including those due to deviations from nominal test conditions) in establishing the working limits to be used for the measured values, so that the true values of the device parameters (as they would be under nominal test conditions) are within the specified limits. The following electrical test tolerances and precautions, unless otherwise specified in the applicable acquisition document, shall be maintained for all device measurements to which they apply (3000, 4000 series and other specified electrical measurements). Wherever test conditions are specified in the applicable acquisition document to a precision tighter than the tolerances indicated below, the specified conditions shall apply and take precedence over these general requirements. a. Bias conditions shall be held to within 3 percent of the specified value. b. Such properties as input pulse characteristics, repetition rates, and frequencies shall be held to within 10 percent. Nominal values should be chosen so that ±10 percent variation (or the actual test equipment variation, if less than 10 percent) does not affect the accuracy or validity of the measurement of the specified value. c. Voltages applied in breakdown testing shall be held within 1 percent of specified value. d. Resistive loads shall be ±5 percent tolerance. e. Capacitive loads shall be ±10 percent or ±1 picofarad (pF) tolerance, whichever is greater. f. Inductive loads shall be ±10 percent or ±5 microhenries (mH) tolerance, whichever is greater. 6 MIL-STD-750E MIL-STD-750E g. Static parameters shall be measured to within 1 percent. h. Switching parameters shall be measured to within 5 percent or 1 nanosecond (ns), whichever is greater. 4.1.3.1 Test methods and circuits. Unless otherwise stated in the specific test method, the methods and circuits shown are given as the basic measurement method. They are not necessarily the only method or circuit which can be used, but the manufacturer shall demonstrate to the acquiring activity that alternate methods or circuits which they may desire to use are equivalent and give results within the desired accuracy of measurement (see 4.1.3). 4.1.4 Calibration requirements. Calibration and certification procedures shall be provided in accordance with ANSI/NCSL-Z540-1-1994 ANSI/NCSL-Z540-1-1994 for plant standards and instruments used to measure or control production processes and semiconductor devices under test. For those measurements that are not traceable to the National Institute of Standards and Technology (NIST), correlation samples shall be maintained and used as the basis of proving acceptability when such proof is required. In addition, the following requirements shall apply: a. The accuracy of a calibrating instrument shall be at least four times greater than that of the item being calibrated, unless the item being calibrated is state of the art equipment, which may be near or equal in accuracy to the state of the art calibrating equipment, in which case the four time requirement does not apply. However, the instrument shall be calibrated to correlate with standards established by the NIST. b. Except in those cases where the NIST recommends a longer period and concurrence is obtained from the qualifying activity, calibration intervals for plant electrical standards shall not exceed one year, and for plant mechanical standards shall not exceed two years. 4.2 Orientations: X is the orientation of a device with the main axis of the device normal to the direction of the accelerating force, and the major cross section parallel to the direction of the accelerating force. Y is the orientation of a device with the main axis of the device parallel to the direction of the accelerating force, and the principal base toward (Y1), or away from (Y2), the point of application of the accelerating force. Z is the orientation of a device with the main axis and the major cross section of the device normal to the direction of the accelerating force. Z is 90 degrees of X. NOTE: For case configurations, other than those shown on figures 1 and 2, the orientation of the device shall be as specified in the individual specification. FIGURE 1. Orientation of noncylindrical semiconductor device to direction of accelerating force. 7 MIL-STD-750E MIL-STD-750E FIGURE 2. Orientation of cylindrical semiconductor device to direction of accelerating force. 4.3 General precautions. The following precautions shall be observed in testing the devices. 4.3.1 Transients. Devices shall not be subjected to conditions in which transients cause the rating to be exceeded. 4.3.2 Test conditions for electrical measurements. Unless otherwise required for a specified test method, semiconductor devices should not be subjected to any condition that will cause any maximum rating of the device to be exceeded. The precautions should include limits on maximum instantaneous currents and applied voltages. High series resistances (constant current supplies) and low capacitances are usually required. If low cutoff, or reverse current devices are to be measured; for example, nanoampere units, care should be taken to ensure that parasitic circuit currents or external leakage currents are small, compared with the cutoff or reverse current of the device to be measured. 4.3.2.1 Steady-state dc measurements (method 4000). Unless otherwise specified, all steady-state dc parameters are defined using steady-state dc conditions. 4.3.2.2 Pulse measurements (method 4000). When device static or dynamic parameters are measured under pulsed conditions, in order to avoid measurement errors introduced by device heating during the measurement period, the following items should be covered in the performance specification sheet: a. The statement "pulsed test" shall be placed by the test specified. b. Unless otherwise specified, the pulse time (tp) shall be 10 milliseconds and the duty cycle shall be a maximum of 2 percent; within this limit the pulse must be long enough to be compatible with test equipment capability and the accuracy required, and short enough to avoid heating. 4.3.3 Test circuits. The circuits shown are given as examples which may be used for the measurements. They are not necessarily the only circuits which can be used but the manufacturer shall demonstrate to the Government that other circuits which they may desire to use will give results within the desired accuracy of measurement. Circuits are shown for PNP transistors in one circuit configuration only. They may readily be adapted for NPN devices and for other circuit configurations. 4.3.3.1 Test method variation. Variation from the specified test methods used to verify the electrical parameters are allowed provided that it is demonstrated to the preparing activity or their agent that such variations in no way relax the requirements of this specification and that they are approved before testing is performed. For proposed test variations, a test method comparative error analysis shall be made available for checking by the preparing activity or their agent. 8 MIL-STD-750E MIL-STD-750E 4.3.4 Soldering. Adequate precautions shall be taken to avoid damage to the device during soldering required for tests. 4.3.5 Order of connection of leads. Care should be taken when connecting a semiconductor device to a power source. The common terminal shall be connected first. 4.3.6 Radiation precautions. Due precautions shall be used in storing or testing semiconductor devices in substantial fields of X-rays, neutrons, or other energy particles. 4.3.7 Handling precautions. 4.3.7.1 UHF and microwave devices. Handling precautions for UHF and microwave devices shall be as follows: a. Ground all equipment. b. Make hand contact to the equipment while holding the base end and maintain hand contact with the equipment until the device is in place. c. Where applicable, keep devices in metal shields until they are inserted in the equipment or until necessary to remove for test. 4.3.7.2 Electrostatic discharge sensitive devices. Handling precautions shall be observed in accordance with MIL-HDBK-263 MIL-HDBK-263 during testing of Electrostatic Discharge Sensitive (ESDS) devices. The area where ESDS device tests are performed shall meet the requirements of an ESD Protected Area of MIL-STD-1686 MIL-STD-1686. 4.4 Continuity verification of burn-in and life tests. The test setup shall be monitored at the test temperature initially and at the conclusion of the test to establish that all devices are being stressed to the specified requirements. The following is the minimum acceptable monitoring procedure: a. Device sockets. Initially and at least each 6 months thereafter, each test board or tray shall be checked to verify continuity to connector points to assure that the correct voltage bias will be applied. Except for this initial and periodic verification, each device or device socket does not have to be checked; however, random sampling techniques shall be applied prior to each time a board is used and shall be adequate to assure that there are correct and continuous electrical connections to the Device under test (DUT). b. Connectors to test boards or trays. After the test boards are loaded with devices, inserted into the system, and brought up to the specified operating conditions, each required test voltage and signal condition shall be verified in at least one location on each test board or tray so as to assure electrical continuity and the correct application of specified electrical stresses for each connection or contact pair used in the applicable test configuration. The system may be opened for a maximum of 10 minutes. c. At the conclusion of the test period, prior to removal of devices from temperature and bias conditions, the voltage and signal condition verification of 4.4b shall be repeated. d. For class S devices, each test board or tray and each test socket shall be verified prior to test to assure that the specified bias conditions are applied to each device. This may be accomplished by verifying the device functional response at each device output(s) or by performing a socket verification on each socket prior to loading. An approved alternate procedure may be used. 4.4.1 Bias interruption. Where failures or open contacts occur which result in removal of the required bias stresses for any period of the required bias duration, the bias time shall be extended to assure actual exposure for the total minimum specified test duration. Any loss(es) or interruption(s) of bias in excess of 10 minutes total duration while the chamber is at temperature during the final 8 hours of burn-in shall require extension of the bias duration for an uninterrupted 8 hours minimum, after the last bias interruption. 9 MIL-STD-750E MIL-STD-750E 4.5 Requirements for High Temperature Reverse Bias (HTRB) and burn-in. a. The temperature of +20°C minimum is the ambient air temperature to which all devices should be exposed during power screening where room ambient is specified. b. An increase in effective ambient temperature from cumulative induced power to DUTs shall not result in device junction temperature exceeding maximum ratings. c. Ambient temperature shall not be measured in the convection current (above) or downstream (Fan Air) of DUTs. d. Moving air greater than 30 CFM (natural convection) may be allowed for the purpose of temperature equalization within high device density burn-in racks. e. High velocity or cooled air shall not be used for the purpose of increasing device ratings. f. Power up of burn-in racks may occur when ambient is less than specified. When thermal equilibrium has been reached, or five hours maximum has occurred, the ambient shall be at the specified value. Time accrued prior to reaching specified ambient shall not be chargeable to the life test duration. g. If the ambient, at or beyond the five hour point is not the specified value, a nonconformance shall exist requiring corrective action. h. Time is not chargeable during the period when specified conditions are not maintained. If device maximum ratings (if life test, finish the test and use for credit; if shippable, use this criteria) are exceeded and the manufacturer intends to submit the lot affected, the product on test shall be evaluated by re-starting the burn-in or HTRB from zero hours at the specified temperature and verifying that the end-point failure rate is typical for this product type from a review of established records. i. Chamber temperature for HTRB and burn-in shall be controlled to ±3 percent of the specified value (unless otherwise specified in 4.1.1). This temperature shall be maintained within the chamber. Forced air may be used to equalize temperature within the chamber but shall not be used as a coolant to increase device power capability. 4.6 Bias requirements. a. Bias errors at the power supply source caused by changing power supply loads during temperature transitions shall not exceed ±5 percent of that specified value. b. Bias values at the source, during stabilized conditions, shall not exceed ±3 percent of the specified value. c. Burn-in apparatus shall be arranged so as to result in the approximate average power dissipation for each device whether devices are tested individually or in a group. Bias and burn-in circuitry tolerances should not vary test conditions to individual devices by more than ±5 percent of specified conditions. d. Normal variation in individual device characteristics need not be compensated for by burn-in circuitry. e. Burn-in equipment shall be arranged so that the existence of failed or abnormal devices in a group does not negate the effect of the test for other devices in the group. Periodic verification will assure that specified conditions are being maintained. Verification shall be performed, as a minimum, at the starting and the end of screening. f. Lead, stud, or case mounted devices shall be mounted in their normal mounting configuration and the point of mechanical connection shall be maintained at no less than the specified ambient. 10 MIL-STD-750E MIL-STD-750E 4.7 Destructive tests. Unless otherwise demonstrated, the following MIL-STD-750 MIL-STD-750 tests are classified as destructive: Method Number Test 1017 Neutron irradiation 1019 Steady-state total dose irradiation 1020 ESDS classification 1021 Moisture resistance 1036,1037 1041 1042 (Condition D) 1046 Intermittent operation life Salt atmosphere Burn-in/life test for power MOSFETs Salt spray 1056 Thermal shock (glass strain) 2017 Die shear test 2031 Soldering heat 2036 Terminal strength 2037 Post seal bond strength 2075 Decap internal visual design verification 2077 SEM All other mechanical or environmental tests (other than those listed in 4.8) shall be considered destructive initially, but may subsequently be considered nondestructive upon accumulation of sufficient data to indicate that the test is nondestructive. The accumulation of data from five repetitions of the specified test on the same sample of product, without significant evidence of cumulative degradation in any device in the sample, is considered sufficient evidence that the test is nondestructive for the device of that manufacturer. Any test specified as a 100-percent screen shall be considered nondestructive for the stress level and duration or number of cycles applied as a screen. 11 MIL-STD-750E MIL-STD-750E 4.8 Nondestructive tests. Unless otherwise demonstrated, the following MIL-STD-750 MIL-STD-750 tests are classified as nondestructive: Method number Test 1001 Barometric pressure 1022 Resistance to solvents 1026, 1027 Steady-state life 1031, 1032 High temperature life (non-operating) 1038, 1039, 1040 Burn-in screen 1042 (Condition A, B, and C) Burn-in/life test for power MOSFETs 1051 (100 cycles or less) Thermal shock (temperature cycling) 1071 Hermetic seal tests 2006 Constant acceleration 2016 2052 Shock Solderability (if the original lead finish is unchanged and if the maximum allowable number of reworks is not exceeded.) PIND test 2056 Vibration, variable frequency 2066 Physical dimensions 2026 2069, 2070, 2072, 2073, 2074 Internal visual (pre-cap) 2071 External visual 2076 Radiographic inspection 2081 FIST 2082 BIST 3101 Thermal impedance testing of diodes 3103 Thermal impedance measurements for IGBTs 3104 Thermal impedance measurements for GaAs 3051, 3052, 3053 (with limited supply voltage) 3131 4066 4081 SOA (condition A for method 3053) Thermal resistance (emitter to base forward voltage, emitter-only switching method) Surge current Thermal resistance of lead mounted diode (forward voltage, switching method) When the junction temperature exceeds the device maximum rated junction temperature for any operation or test (including electrical stress test), these tests shall be considered destructive except under transient surge or nonrepetitive fault conditions or approved accelerated screening when it may be desirable to allow the junction temperature to exceed the rated junction temperature. The feasibility shall be determined on a part by part basis and in the case where it is allowed adequate sample testing, shall be performed to provide the proper reliability safeguards. 12 MIL-STD-750E MIL-STD-750E 4.9 Laboratory suitability. Prior to processing any semiconductor devices intended for use in any military system or sub-system, the facility performing the test(s) must be audited by the Defense Electronics Supply Center, Sourcing and Qualification Division (DESC-ELST) and be granted written Laboratory Suitability status for each test method to be employed. Processing of any devices by any facility without Laboratory Suitability status for the test methods used shall render the processed devices nonconforming. 4.10 Recycled, recovered, or environmentally preferable materials. Recycled, recovered, or environmentally preferable materials should be used to the maximum extent possible, provided that the material meets or exceeds the operational and maintenance requirements, and promotes economically advantageous life cycle costs. 5. DETAILED REQUIREMENTS This section is not applicable to this standard. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended Use. The intended use of this standard is to establish appropriate conditions for testing semiconductor devices to give test results that simulate the actual service conditions existing in the field. This standard has been prepared to provide uniform methods, controls, and procedures for determining with predictability the suitability of such devices within Military, Aerospace and special application equipment. 6.2 International standardization agreement. Certain provisions of this standard are the subject of international standardization agreement. When amendment, revision, or cancellation of this standard is proposed which will affect or violate the international agreement concerned, the preparing activity will take appropriate reconciliation action through international standardization channels, including departmental standardization offices, if required. 6.3 Subject term (key word) listing. Environmental tests Mechanical characteristics tests Electrical characteristics tests for bipolar transistors Circuit-performance and thermal resistance measurements Low frequency tests High frequency tests Electrical characteristics tests for MOS field-effect transistors Electrical characteristics tests for Gallium Arsenide transistors Electrical characteristics tests for diodes Electrical characteristics tests for microwave diodes Electrical characteristics tests for tunnel diodes High reliability space application tests 6.4 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extent of the changes. 13 MIL-STD-750E MIL-STD-750E 1000 Series Environmental tests MIL-STD-750E MIL-STD-750E METHOD 1001.2 BAROMETRIC PRESSURE (REDUCED) 1. Purpose. The purpose of this test is to check the device capabilities under conditions simulating the low pressure encountered in the nonpressurized portions of aircraft in high altitude flight. 2. Apparatus. The apparatus used for the barometric-pressure test shall consist of a vacuum pump and a suitable sealed chamber having means for visual observation of the specimen under test when necessary. A suitable pressure indicator shall be used to measure the simulated altitude in feet in the sealed chamber. 3. Procedure. The specimens shall be mounted in the test chamber as specified and the pressure reduced to the value indicated in one of the following test conditions, as specified. Previous references to this method do not specify a test condition; in such cases, test condition B shall be used. While the specimens are maintained at the specified pressure, and after sufficient time has been allowed for all entrapped air in the chamber to escape, the specimens shall be subjected to the specified test. Test condition Pressure - Maximum Altitude Inches of mercury Millimeters of mercury Feet Meters A 8.88 226.00 30,000 9,144 B 3.44 87.00 50,000 15,240 C 1.31 33.00 70,000 21,336 D 0.315 8.00 100,000 30,480 E 0.043 1.09 150,000 45,720 F 17.300 439.00 15,000 4,572 656,000 200,000 G 9.436 X 10 -8 2.40 X 10 -6 In addition the following is required: a. Twenty minutes before and during the test, the test temperature shall be +25°C ±3°C. b. The specified voltage shall be applied and monitored over the range from atmospheric pressure to the specified minimum pressure and returned so that any device malfunctions, if they exist, will be detected. 4. Failure criteria. A device which exhibits arc-overs, harmful coronas, or any other defect or deterioration that may interfere with the operation of the device shall be considered a failure. 5. Summary. The following conditions must be specified in the performance specification sheet: a. Voltage (see 3.b .). b. Maximum pressure (see 3.b ). 1 of 1 METHOD 1001.2 MIL-STD-750E MIL-STD-750E METHOD 1011.1 IMMERSION 1. Purpose. This test is performed to determine the effectiveness of the seal of component parts. The immersion of the part under evaluation into liquid at widely different temperatures subjects it to thermal and mechanical stresses which will readily detect a defective terminal assembly, or a partially closed seam or molded enclosure. Defects of these types can result from faulty construction or from mechanical damage such as might be produced during physical or environmental tests. The immersion test is generally performed immediately following such tests because it will tend to aggravate any incipient defects in seals, seams, and bushings which might otherwise escape notice. This test is essentially a laboratory test condition, and the procedure is intended only as a measurement of the effectiveness of the seal following this test. The choice of fresh or salt water as a test liquid is dependent on the nature of the component part under test. When electrical measurements are made after immersion cycling to obtain evidence of leakage through seals, the use of a salt solution instead of fresh water will facilitate detection of moisture penetration. This test provides a simple and ready means of detection of the migration of liquids. Effects noted can include lowered insulation resistance, corrosion of internal parts, and appearance of salt crystals. The test described is not intended as a thermal-shock or corrosion test, although it may incidentally reveal inadequacies in these respects. 2. Procedure. The test consists of successive cycles of immersions, each cycle consisting of immersion in a hot bath of fresh (tap) water at a temperature of 65°C +5°C, -0°C (149°F +9°F, -0°F) followed by immersion in a cold bath. The number of cycles, duration of each immersion, and the nature and temperature of the cold bath shall be as indicated in the applicable test condition listed in the specified test. . Test condition Number of cycles Duration of each immersion (Minutes) Immersion bath (cold) Temperature of cold bath (°C) A 2 15 Fresh (tap) water 25, +10, -5 B 2 15 Saturated solution of sodium chloride and water. 25, +10, -5 C 5 60 Saturated solution of sodium chloride and water. 0±3 The transfer of specimens from one bath to another shall be accomplished as rapidly as practicable. After completion of the final cycle, specimens shall be thoroughly and quickly washed and all surfaces wiped or air-blasted clean and dry. 3. Measurements. Unless otherwise specified, measurements shall be made at least 4 hours, but not more than 24 hours, after completion of the final cycle. Measurements shall be made as specified. 4. Summary. The following details are to be specified in the individual specification: a. Test condition letter (see 2). b. Time after final cycle allowed for measurements, if other than that specified (see 3). c. Measurements after final cycle (see 3). 1of 1 METHOD 1011.1 MIL-STD-750E MIL-STD-750E METHOD 1015.1 STEADY-STATE PRIMARY PHOTOCURRENT IRRADIATION PROCEDURE (ELECTRON BEAM) 1. Purpose. This test procedure establishes the means for measuring the steady-state primary photocurrent (IPH) generated in semiconductor devices when these devices are exposed to ionizing radiation. In this test method, the test device is irradiated in the primary electron beam of a linear accelerator (LINAC). 1.1 Definitions. The following definitions shall apply for this test method. 1.1.1 Primary photocurrent (IPH). The flow of excess charge carriers across a P-N junction due to ionizing radiation creating electron-hole pairs in the vicinity of the P-N junction. 1.1.2 Measurement interferences. A current measured in the test circuits that does not result from primary photocurrent (see appendix herein). 2. Apparatus. 2.1 Ionizing pulse source. The ionizing pulse shall be produced by an electron LINAC. The ionizing pulse shall have dose rate variations within ±15 percent of nominal during the pulse and shall consist of electrons with an energy equal to or greater than 10 MeV. 2.2 Pulse recording equipment. Pulse recording equipment shall be provided that will display and record both the photocurrent and the pulse-shape monitor signal. It may consist of oscilloscopes with recording cameras, appropriate digitizing equipment, or other approved recording equipment. The equipment shall have an accuracy and resolution of five percent of the pulse width and maximum amplitude of the ionizing source. 2.3 Test circuits. One of the following test circuits shall be selected, radiation-shielded, and close enough to the DUT in order to meet the requirements of 3.2. 2.3.1 Resistor sampling circuits. The resistor sampling circuits shall be as shown on figure 1015-1. 2.3.2 Current transformer circuit. The current transformer circuit shall be as shown on figure 1015-2. 2.4 Irradiation pulse-shape monitor. One of the following devices shall be used to develop a signal proportional to the dose rate delivered to the DUT. Any time constants which degrade the linear response of the monitor signal shall be less than 10 percent of the beam pulse width. The dose rate at the monitor shall be proportional to the dose rate at the DUT and the variation from proportionality shall not exceed ±3 percent. 2.4.1 Signal diode. The signal diode selected shall have a response that is linear within ±5 percent of the dose rate over the selected irradiation range. Depending on the sensitivity of the diode, it may be positioned at a point within the beam from the ionizing source at which it will remain in the linear region. The signal diode shall be placed in one of the test circuits described in 2.3, and it shall be back biased at not more than fifty percent of the diode breakdown voltage. 2.4.2 P-type-intrinsic-N-type (P-I-N) diode. A P-I-N diode shall be used as stated in 2.4.1. 2.4.3 Current transformer. A transformer with a hollow central axis that shall be mounted around the output of the ionizing source. 2.4.4 Secondary-emission monitor. The secondary-emission monitor shall consist of a thin foil mounted in a chamber evacuated to .134 Pa (0.01 mmHg), which is located in the path of the beam from the ionizing source. The foil shall be biased negatively with respect to ground, or shielded with positively biased grids. 2.5 Dosimeter. The dosimeter shall be used to calibrate the output of the pulse-shape monitor in terms of dose rate. The dosimeter type shall be a commercial thermoluminescent detector (TLD), thin calorimeter, or other system as specified. The dosimetry measurement technique shall be accurate to ±20 percent. 1 of 5 METHOD 1015.1 MIL-STD-750E MIL-STD-750E NOTES: 1. 2. 3. 4. 5. 6. 7. R1 = 1,000 , 5 percent. R2 = 5 , 1 percent. C1 = 15 µF, 5 percent. C2 = .01 µF, 5 percent. RT = Characteristic termination for coaxial cable. Circuit B shall be used for large photocurrents (those for which more than 10 percent of the bias appears across resistor RT in circuit A). Photocurrent for circuit A: I PH = 8. Steady - state signal (E) Cable termination ( R T ) Photocurrent for circuit B: I PH = [Steady - state signal (E)][Cable termination ( RT ) + R2 ] [Cable termination( RT )][ R2 ] FIGURE 1015-1. Resistor sampling circuits. METHOD 1015.1 2 MIL-STD-750E MIL-STD-750E NOTES: 1. R1 = 1,000 , 5 percent. 2. C1 = 15 µF, 5 percent. 3. C2 = .01 µF, 5 percent. 4. RT = Characteristic termination for coaxial cable. 5. Photocurrent calculation: I PH = Steady - state signal (E) Sensitivity of current transformer FIGURE 1015-2. Current transformer circuit. 3. Procedure. 3.1 General. The test facility shall select a test fixture and pulse shape monitor. The test fixture and monitor shall be aligned with the beam from the ionizing source. In addition, any shielding, collimation, or beam scattering equipment shall be properly positioned. If repositioning of any equipment or the test circuit is required to accomplish the device testing, the repositioning shall be demonstrated to be reliable and repeatable. 3.2 Test circuit check-out. The ionizing source shall be pulsed either with an empty device package or without the DUT in the test circuit and with all required bias applied. The ionizing source shall be adjusted to supply the dose rate required for this test. The recorded current from the pulse recording equipment shall be no more than 10 percent of the steady-state photocurrent expected to be measured for this test (see 3.4.3). If this condition is not met, see appendix herein. 3 METHOD 1015.1 MIL-STD-750E MIL-STD-750E 3.3 Ionizing source calibration. Mount the selected dosimeter in place of the DUT. Pulse the ionizing source, record the pulse-shape monitor signal, and determine the radiation dose measured by the dosimeter. Calculate a dose rate factor as follows: Doseratefactor = Measureddosimeterdose[rad(Si)] Integratedpulseshapemonitorsignal(voltsxseconds) This measurement shall be repeated five times, and the average of the six dose rate factors obtained shall be the dose rate factor used for the test. One dosimeter may be used repetitively if the dose is read for each pulse. 3.4 Device test. 3.4.1 Mounting. Mount the DUT in the beam from the ionizing source and connect it to the rest of the test circuit. The bias applied shall be as specified in the device specification; or if not specified, the bias shall be fifty percent of the specified breakdown voltage of the DUT. 3.4.2 Dose rate. Either adjust the ionizing source beam current or use an alternate method (i.e., scatterers or a different sample location) to obtain the specified dose rate ±20 percent. Pulse the ionizing source and record the pulse-shape monitor signal and the photocurrent signal from the DUT. 3.4.3 Calculate photocurrent. The steady-state photocurrent shall be calculated as expressed on the figure selected for the test circuit in 2.3. 3.4.4 Verify test circuit. Check the current recorded in the test circuit in 3.2 and verify that the value of the current does not exceed 10 percent of the photocurrent recorded in 3.4.3. 3.5 Test circuit checkout. Repeat the device test (see 3.4) for each dose rate that is required by the device specification. The calibration (see 3.3) shall be performed for each dose rate to be tested. The test circuit checkout (see 3.2) shall be performed when a new device type is tested or when any change is made in the position of the test circuit or DUT supporting structure. 4. Summary. The following conditions shall be specified in the performance specification: a. The pulse width requirements of the ionizing pulse source. (The pulse width must exceed the semiconductor minority lifetime by at least a factor of two .) b. The bias applied to the device (see 3.4.1). c. The irradiation dose rate(s) applied (see 3.4.2). d. When required, any total dose restrictions. e. When required, a description of the placement of the device in the beam with respect to the junction. f. When required, for multi-junction devices, the device terminals that are to be monitored. g. When required, the procedure for approval of the test facility and dosimetry. METHOD 1015.1 4 MIL-STD-750E MIL-STD-750E APPENDIX MEASUREMENT INTERFERENCES 1. Scope. The following problems commonly arise when electronics are tested in a radiation environment. Most of these interferences are present when the test circuit is irradiated under bias with the DUT removed. This Appendix is not a mandatory part of the standard. The information contained herein is intended for guidance only. 1.1 Air ionization. The irradiation pulse can ionize the air around the test circuit and provide a spurious conduction path. The air ionization contribution to the signal is proportional to the applied bias. The effect of air ionization is minimized by reducing the circuit components exposed to the beam pulse, by coating exposed leads with a thick nonconducting layer or by performing the test in a vacuum. 1.2. Secondary emission. The beam pulse irradiating any electrical lead or component can cause a net charge to enter or leave the exposed surfaces. This spurious current alters the measured photocurrent. Secondary emission effects are reduced by minimizing the circuit components exposed to the direct beam. 1.3. Perturbed irradiation field. Any material exposed to the beam pulse will scatter and modify the incident radiation of the beam. A nearby DUT or dosimeter will then be exposed to a noncharacterized and unexpected form of radiation. These field perturbations are reduced by minimizing the mass of the structure supporting the DUT and the dosimeter that is exposed to the beam. All materials should have a low atomic number; e.g., plastics and aluminum. 1.4. RF pickup. The ionizing pulse source discharges large amounts of electromagnetic energy at the same time the photocurrent is being measured. Good electrical practice is necessary to eliminate resonant structure, noise pick-up on signal cables, common mode pick-up, ground loops, and similar interferences. 5 METHOD 1015.1 MIL-STD-750E MIL-STD-750E METHOD 1016 INSULATION RESISTANCE 1. The device shall be tested in accordance with method 302 of MIL-STD-202 MIL-STD-202. 1of 1 METHOD 1016 MIL-STD-750E MIL-STD-750E METHOD 1017.1 NEUTRON IRRADIATION 1. Purpose. The neutron irradiation test is performed to determine the susceptibility of discrete semiconductor devices to degradation in the neutron environment. This test is destructive. Objectives of the test are: a. To detect and measure the degradation of critical semiconductor device electrical characteristics as a function of neutron fluence. b. To determine if specified semiconductor device electrical characteristics are within specified limits after exposure to a specified level of neutron fluence (see 2.4.1 4). 2. Apparatus. 2.1 Test instruments. Test instrumentation to be used in the radiation test shall be standard laboratory electronic test instruments such as power supplies, digital voltmeters, and picoammeters, capable of measuring the electrical parameters required. Parameter test methods and calibration shall be in accordance with this general specification. 2.2 Radiation source. The radiation source used in the test shall be in a TRIGA Reactor or a Fast Burst Reactor. Operation may be in either pulse or steady-state repetitive pulse conditions as appropriate. The source shall be one that is acceptable to the acquiring activity. 2.3 Dosimetry equipment. a. Fast-neutron threshold activation foils such as 32S, 54Fe, and 58Ni. b. CaF2 TLD. c. Appropriate activation foil counting and TLD readout equipment. 2.4 Dosimetry measurements. 2.4.1 Neutron fluence. The neutron fluence used for device irradiation shall be obtained by measuring the amount of radioactivity induced in a fast-neutron threshold activation foil such as 32S, 54Fe, or 58Ni, irradiated simultaneously with the device. A standard method for converting the measured radioactivity in the specific activation foil employed into a neutron fluence is given in the following (DoD) adopted (ASTM) standards: ASTM E263 Standard Test Method for Measuring Fast-Neutron Flux by Radioactivation of Iron. ASTM E264 Standard Test Method for Measuring Fast-Neutron Flux by Radioactivation of Nickel. ASTM E265 Standard Test Method for Measuring Fast-Neutron Flux by Radioactivation of Sulfur. The conversion of the foil radioactivity into a neutron fluence requires a knowledge of the neutron spectrum incident on the foil. If the spectrum is not known, it shall be determined by use of the following DoD adopted ASTM standards, or their equivalent: ASTM E720 Standard Guide for Selection of a Set of Neutron-Activation Foils for Determining Neutron Spectra used in Radiation-Hardness Testing of Electronics. ASTM E721 Standard Method for Determining Neutron Energy Spectra with Neutron-Activation Foils for Radiation-Hardness Testing of Electronics. ASTM E722 Standard Practice for Characterizing Neutron Energy Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of Electronics. 1 of 3 METHOD 1017.1 MIL-STD-750E MIL-STD-750E Once the neutron energy spectrum has been determined and the equivalent monoenergetic fluence calculated, then an appropriate monitor foil (such as 32S, 54Fe, or 58Ni) should be used in subsequent irradiations to determine the neutron fluence as discussed in E722. Thus, the neutron fluence is described in terms of the equivalent monoenergetic neutron fluence in accordance with the unit monitor response. Use of a monitor foil to predict the equivalent monoenergetic neutron fluence is valid only if the energy spectrum remains constant. 2.4.2 If absorbed dose measurements of the gamma-ray component during the device test irradiations are required, then such measurements shall be made with CaF2 TLDs, or their equivalent. These TLDs shall be used in accordance with the recommendations of the following DoD adopted ASTM standard: E668 Standard Practice for the Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in Radiation-Hardness Testing of Electronic Devices. 3. Procedure. 3.1 Safety requirements. Neutron irradiated parts may be radioactive. Handling and storage of test specimens or equipment subjected to radiation environments shall be governed by the procedures established by the local Radiation Safety Officer or health physicist. NOTE: The receipt, acquisition, possession, use, and transfer of this material after irradiation is subject to the regulations of the U.S. Nuclear Regulatory Commission, Radioisotope License Branch, Washington, DC 20555. A by-product license is required before an irradiation facility will expose any test devices. (U.S. Code, see 10 CFR 30-33.) 3.2 Test samples. Unless otherwise specified, a test sample shall be randomly selected and consist of a minimum of ten parts. All sample parts shall have met all the requirements of the governing specification for that part. Each part shall be serialized to enable pre and post test identification and comparison. 3.3 Pre-exposure. 3.3.1 Electrical tests. Pre-exposure electrical tests shall be performed on each part as required. Where delta parameter limits are specified, the pre-exposure data shall be recorded. 3.3.2 Exposure set-up. Each device shall be mounted unbiased and have its terminal leads either all shorted or all open. For Metal oxide semiconductor (MOS) devices all leads shall be shorted. An appropriate mounting fixture which will accommodate both the sample and the required dosimeters (at least one actuation foil and one CaF2 TLD) shall be used. The configuration of the mounting fixture will depend on the type of reactor facility used and should be discussed with reactor facility personnel. Test devices shall be mounted such that the total variation of fluence over the entire sample does not exceed 20 percent. Reactor facility personnel shall determine both the position of the fixture and the appropriate pulse level or power time product required to achieve the specified neutron fluence level. 3.4 Exposure. The test devices and dosimeters shall be exposed to the neutron fluence as specified. The exposure level may be obtained by operating the reactor in either the pulsed or power mode. If multiple exposures are required, the post-irradiation electrical tests shall be performed (see 3.5.1) after each exposure. A new set of dosimeters are required for each exposure level. Since the effects of neutrons are cumulative, each additional exposure level will have to be determined to give the specified total accumulated fluence. All exposures shall be made at 20°C ±10°C and shall be correlated to a 1 MeV equivalent fluence. METHOD 1017.1 2 MIL-STD-750E MIL-STD-750E 3.5 Post-exposure. 3.5.1 Electrical tests. Test devices shall be removed only after clearance has been obtained from the health physicist at the test facility. The temperature of the sample devices shall be maintained at +20°C ±10°C from the time of the exposure until the post-electrical tests are made. The post-exposure electrical tests shall be made within 24 hours after the completion of the exposure. If the residual radioactivity level determined by the local Radiation Safety Officer is too high for device handling purposes, the elapsed time before post-test electrical measurements are made shall be extended to 1 week or remote testing shall be utilized. All required data must be recorded for each device after each exposure. 3.5.2 Failure analysis. Devices which exhibit anomalous behavior (e.g., non-linear degradation of 1/ß) shall be subjected to failure analysis. 3.6 Reporting. In reporting the results of radiation tests on discrete devices, adequate identification of the devices is essential. As a minimum, the report shall include the device type number, serial number, the manufacturer, controlling specification, the date code, and other Part or Identifying Numbers (PINs) provided by the manufacturer. Each data sheet shall include radiation test date, electrical test conditions, radiation test levels, and ambient conditions, as well as the test data. When other than specified electrical test circuits are employed, the parameter measurement circuits shall accompany the data. Any anomalous incidents during the test shall be fully explained in footnotes to the data. 4. Summary. The following conditions shall be specified in the request for test, or when applicable, the performance specification: a. Device types. b. Quantities of each device type to be tested if other than specified in 3.2. c. Electrical parameters to be measured in pre- and post-exposure tests. d. Criteria for pass, fail, record actions on tested devices. e. Criteria for anomalous behavior designation. f. Radiation exposure levels. g. Test instrument requirements. h. Radiation dosimetry requirements if other than 2.3. i. Ambient temperature, if other than specified herein. j. Requirements for data reporting and submission, where applicable. 3 METHOD 1017.1 MIL-STD-750E MIL-STD-750E METHOD 1018.3 INTERNAL GAS ANALYSIS 1. Purpose. The purpose of this test is to measure the atmosphere inside a metal or ceramic hermetically-sealed device. Of particular interest is the measurement of the moisture content to determine if the device meets the specified moisture criteria. Also of interest is the measurement of all the other gases because they reflect upon the quality of the sealing process and provide information about the long term chemical stability of the atmosphere inside the device. This test is destructive. 2. Apparatus. The apparatus for the internal water-vapor content test shall be as follows: a. A mass spectrometer meeting the following requirements: (1) Spectra range. The mass spectrometer shall be capable of reading a minimum spectra range of 1 to 100 atomic mass units (AMUs). (2) Detection limit. The mass spectrometer shall be capable of reproducibly detecting the specified moisture content for a given volume package with signal to noise ratio of 20 to 1 (i.e., for a specified limit of 5,000 parts per million volume (ppmv), .01 cc, the mass spectrometer shall demonstrate a 250 ppmv minimum detection limit to moisture for a package volume of .01 cc). The smallest volume shall be considered the worst case. (3) System calibration. The calibration of the mass spectrometer shall be accomplished quarterly with a moisture level in the 4,500 to 5,500 ppmv range and with a moisture level in the 2,000 to 3,000 ppmv range, and with a moisture level in the 7,000 to 8,000 range using the same sensitivity factor. This calibration needs to be performed for each calibrator volume to demonstrate a linear response and to detect offset. A minimum of three data points for each moisture level shall be collected. Package simulators which have the capability of generating at least three known volumes of gas ±10 percent on a repetitive basis by means of a continuous sample volume purge of known moisture content ±5 percent shall be used. Moisture content shall be established by the standard generation techniques (i.e., 2 pressure, divided flow, or cryogenic method). The dew point hygrometer shall be recalibrated a minimum of once per year using equipment traceable to National Institute of Standards and Technology (NIST) or by a suitable commercial calibration services laboratory using equipment traceable to NIST standards. The dew point hygrometer shall be capable of measuring the dew point o temperature to an accuracy of +0.2 C. The system shall have a pressure sensor to measure the pressure in line with the temperature dew point sensor to an accuracy of +0.1 inches of Hg for the range of pressure being used. In addition, the test laboratory shall have a procedure to calculate the concentration of moisture, in units of ppmv, from the dew point temperature measurement and the pressure measurement. Gas analysis results obtained by this method shall be considered valid only in the moisture range or limit bracketed by at least two (volume or concentration) calibration points (i.e., 5,000 ppmv between .01 to .1 cc or 1,000 to 5,000 ppmv between .01 to .1 cc). A best fit curve shall be used between volume calibration points. Systems not capable of bracketing may use an equivalent procedure as approved by the qualifying activity. Corrections of sensitivity factors deviating greater than 10 percent from the mean between calibration points shall be required. NOTE: It is recommended that the percentage of water vapor contained in a gas flowing through the gas humidifier be compared to the dewpoint sensor reading for accuracy of the sensor. The following equation may be used to calculate the percent of water vapor contained in a gas flowing through the gas humidifier. 1 of 6 METHOD 1018.3 MIL-STD-750E MIL-STD-750E % H 2O = 100 (Pv mb ) 68 . 95 mb/psi Pg + 1 . 33 mb/mm Pa Where: Pv = vapor pressure of water in the GPH based on water temperature in degrees centigrade, Pg = gauge pressure in psi, and Pa = atmospheric pressure in mm Hg. (4) Annual calibration for other gases. Calibration shall be required for all gases found in concentrations greater than .01 percent by volume. As a minimum, this shall include all gases listed in 3b. The applicable gases shall be calibrated at approximately 1 percent concentrations requirements, with the exception of fluorocarbons, which may use a concentration of approximately 200 ppmv; NH3 which may use a concentration of approximately 200 ppmv; hydrogen, which may use a concentration of approximately 200 ppmv; nitrogen, which may use a concentration of approximately 80 percent; helium, which may use a concentration of approximately 10 percent; and oxygen, which may use a concentration of approximately 20 percent. (5) Daily calibration check. The system calibration shall be checked on the day of test prior to any testing. This shall include checking the calibration by in-letting a sample with a moisture level in the 4,5005,500 ppmv range at the required volumes and comparing the result with the dew point hygrometer. The resulting moisture reading shall be within 250 ppmv of the moisture level in the calibration sample. NOTE: Equipment error needs to be determined and subtracted from the allowed maximum deviation of 250 ppmv. The calibration check shall be performed using the same conditions used for testing devices (e.g. background pressure, background environment, time between sample inlets, package simulator volume etc) Calibration performed on the day of test prior to any testing may be substituted for this calibration check. Calibration records shall be kept on a daily basis. (6) Performed on the day of test prior to any testing may be substituted for this calibration check. (7) Precision tuning shall be performed following significant maintenance or repair of the ion source. (8) A record of all changes made to the sensitivity factors shall be maintained. b. A vacuum opening chamber which can contain the device and a vacuum transfer passage connecting the device to the mass spectrometer of 2.a. A vacuum transfer passage shall efficiently (without significant loss of moisture from adsorption) transfer the gas from the device to the mass spectrometer ion source for measurement. For initial certification of systems or extension of suitability, device temperature on systems using an external fixture shall be characterized by placing a thermocouple into the cavity of a blank device of similar mass, internal volume, construction, and size. This shall be a means for proving the device temperature that has been maintained at 100°C ±5°C for the minimum 10 minutes. This also applies to devices prebaked in an external oven but tested with the external fixture to adjust for any temperature drop during the transfer. These records shall be maintained by the test laboratory. c. A piercing arrangement functioning within the opening chamber or transfer passage of 2.b, which can pierce the specimen housing (without breaking the mass spectrometer chamber vacuum and without disturbing the package sealing medium), thus allowing the specimen's internal gases to escape into the chamber and mass spectrometer. NOTE: A sharp-pointed piercing tool, actuated from outside the chamber wall via a bellows to permit movement shall be used to pierce both metal and ceramic packages. For ceramic packages, or devices with thick metal lids, the package lid or cover should be locally thinned by abrasion to facilitate localized piercing. METHOD 1018.3 2 MIL-STD-750E MIL-STD-750E d. A pressure sensing device located in the transfer passage to measure the pressure rise in the transfer passage during the test. This pressure sensor is used to read a relative pressure change when the device is punctured. This relative pressure change indicates the relative quantity of gas in the device when comparing the test results of one device to another device. The significance of the reading is not intended to be absolute. Although the pressure gauge reading is reported, the pressure gauge is for indication only. 3. Procedure. All devices shall be prebaked for 16 to 24 hours at 100°C ±5°C prior to test. Ovens shall have a means to indicate if a power interruption occurs during the prebaking period and for how long the temperature drops below 100°C ±5°C. Devices whose temperature drops below 100°C ±5°C for more than 1 hour shall undergo another prebake to begin a minimum of 12 hours later. A maximum 5 minute transfer time from prebake to hot insertion into apparatus shall be allowed. If 5 minutes is exceeded, device shall be returned to the prebake oven and prebake continued until device reaches 100°C ±5°C. The system shall be maintained at a stable temperature equal to or above the device temperature. The fixturing in the vacuum opening chamber shall position the specimen as required by the piercing arrangement of 2.c, and maintain the device at 100°C ±5°C for a minimum of 10 minutes prior to piercing. After device insertion, the device and chamber shall be pumped down and baked out at a temperature of 100°C ±5°C until the background pressure level will not prevent achieving the specified measurement accuracy and sensitivity. The background vacuum spectra shall be acquired and shall later be subtracted from the sample spectra. After pump down, the device case or lid shall be punctured and the following properties of the released gases shall be measured, using the mass spectrometer: a. The water-vapor content of the released gases, as a percent by unit volume or ppmv of the total gas content. b. The proportions (by volume) of the other following gases: N2, He, Mass 69 (fluorocarbons), O2, Ar, H2, CO2, CH4, NH3, and other solvents, if available. Calculations shall be made and reported on all gases present. Data reduction shall be performed in a manner, which will preclude the cracking pattern interference from other gas specie in the calculations of moisture content. Data shall be corrected for any system dependent matrix effects such as the presence of hydrogen in the internal ambient. c. The increase in chamber pressure as the gases are released by piercing the device package. A pressure change of ±25 percent from expected for that package volume and pressurization may indicate that (1) the puncture was not fully accomplished, (2) the device package was not sealed hermetically, or (3) does not contain the normal internal pressure. d. The test laboratory should provide comments describing the spectra of unknowns or gases that are present but not in sufficient concentration to be identified or quantified with reasonable certainty. e. If the test laboratory has reason to believe that the test results may be invalid due to reasons such as improper puncture of the device or equipment malfunction, the results shall be reported as "no test" with additional comments provided. The device may be replaced with another. NOTE: The device shall be hermetic in accordance with test method 1071 of this standard, and free from any surface contaminants which may interfere with accurate water vapor content measurement. The internal water vapor content laboratory is not required to test for hermeticity in accordance with test method 1071 of this standard. It is recommended that samples submitted for testing shall include information about the manufacturing process, including sealing pressure, sealing gas, free internal cavity volume, lid thickness at puncture site, lid material, and the location of the puncture site. 3 METHOD 1018.3 MIL-STD-750E MIL-STD-750E 3.1 Failure criteria. a. The Internal gas analysis (IGA) laboratory shall not classify devices as passed or failed. b. A device being tested in a batch system which exhibits an abnormally low total gas content, as defined in 3.c, shall constitute a hermeticity failure not an IGA failure. Such a device may be replaced by another device from the same population; if the replacement device exhibits normal total gas content for its type, neither it nor the original device shall constitute a failure for this cause. 4. Implementation. Suitability for performing method 1018 analysis is granted by the qualifying activity for specific limits and volumes. Method 1018 calibration procedures and the suitability survey are designed to guarantee ±20 percent lab-to-lab correlation in making a determination whether the sample passes or fails the specified limit. Water vapor contents reported either above or below the range of suitability are not certified as correlatable values. This out of specification data has meaning only in a relative sense and only when one laboratory's results are being compared. The specification limit of 5,000 ppmv shall apply to all package volumes (unless otherwise specified), with the following correction factors permitted, to be used by the manufacturer provided they are documented and shown to be applicable: a. For package volumes less than .01 cc internal free volume which are sealed while heated in a furnace: CT = T r + 273 T s + 273 Where: CT = correction factor (temperature) Tr = room temperature (°C) Ts = sealing temperature (°C). b. For package volumes of any size sealed under vacuum conditions: CP = Ps Pa CP = correction factor (pressure) Ps = sealing pressure Pa = atmospheric pressure (pressures may be in Torr or mm Hg). The correction factor, if used, shall be applied as follows: Water vapor (corrected) = water vapor (measured) x CX; where CX is the applicable correction factor. The range of suitability for each laboratory will be extended by the qualifying activity when the analytical laboratories demonstrate an expanded capability. Information on current analytical laboratory suitability status can be obtained by contacting Defense Supply Center, Columbus, ATTN: DSCC-VQE, P.O. Box 3990, Columbus, OH 43216-5000 or e-mail vqe.chief@dla.mil. METHOD 1018.3 4 MIL-STD-750E MIL-STD-750E 5. Surrogate monitors. Surrogate monitors are only applicable for packages less than .01 cc to evaluate the process baseline. Surrogate monitors will be subject to IGA testing in accordance with method 1018 herein. A production lot will be validated by the performance of its monitors. It is well known and established that pre-seal bake and storage conditions of packaging materials will severely impact the levels of moisture detected in almost any package type. The use of the surrogate monitors without a controlled and disciplined manufacturing line is of questionable value. The proposed test is not, nor is it intended to be, a direct measurement of small packaged product internal moisture. However, it is a quantifiable indicator that the process and controls used are consistent. This is an improvement over the existing situation in which there is a requirement for control of internal moisture and no accurate and repeatable method of measurement. 5.1. Requirements. Surrogate monitors are to be procured from the same manufacturer and be manufactured in the same technology as the production headers, using the same materials, plating, processing, and technology. For example, the UB packages: Kyocera header, multilayer cofired ceramic technology; SemiAlloys lid, Alloy 52, nickel underplate, and gold plate. a. The device manufacturer shall use the same preconditioning on surrogate monitors and production product, i.e. vacuum bake time and temperature, storage conditions, die attach materials and process. b. Surrogate monitors shall be sealed at the same time and using the same process as the production parts. c. To optimize the effect of preconditioning, the transit time from the oven to the seal furnace shall be controlled and minimal. d. A typical process would include: (1) Batch high-vacuum bake headers and lids. (2) Store baked material in dry nitrogen. (3) Second vacuum bake overnight (a minimum of 12 hrs) just prior to seal. (4) Minimize the post second bake exposure to atmosphere. e. Surrogate monitor packages will be under baseline documentation control. Full traceability from procurement to utilization shall be maintained. f. Initially, the surrogate monitors will be used at the beginning of the seal operation and at 2 hour intervals. A minimum of six monitors must be processed for each seal lot (a "seal lot" may consist of multiple production lots if they go through sealing without interruptions (other than the scheduled breaks) and have identical traceability of headers and lids). g. It is expected that it will take approximately 6 months for a manufacturer to collect enough lots and data to establish a baseline. Later modifications of the preconditioning process will be evaluated against this baseline. h. The device manufacturer will submit to DSCC the results from a minimum of three seal lots to establish the effectiveness of the process baseline. Additional testing will be retained and available to DSCC upon request. 6. Summary. The following details shall be specified in the applicable acquisition document: The maximum allowable water vapor content if other than 5,000 ppmv. 5 METHOD 1018.3 MIL-STD-750E MIL-STD-750E METHOD 1019.5 STEADY-STATE TOTAL DOSE IRRADIATION PROCEDURE 1. Purpose. This test procedure defines the requirements for testing discrete packaged semiconductor devices for 60 ionizing radiation (total dose) effects from a cobalt-60 ( Co) gamma ray source. In addition, this procedure provides an accelerated annealing test for estimating low dose rate ionizing radiation effects on devices. This annealing test is important for low dose-rate or certain other applications in which devices may exhibit significant time dependent effects. This procedure addresses only steady-state irradiations, and is not applicable to pulse type irradiations. This test may produce severe degradation of the electrical properties of irradiated devices and thus should be considered a destructive test. 1.1 Definitions. Definitions of terms used in this procedure are given below: a. Ionizing radiation effects: The changes in the electrical parameters of a device resulting from radiation-induced charge. It is also referred to as total dose effects. b. In-flux tests: Electrical measurements made on devices during radiation exposure. c. Not in-flux tests: Electrical measurements made on devices at any time other than during irradiation. d. Remote tests: Electrical measurements made on devices which are physically removed from the irradiation location for the measurements. e. Time dependent effects. Significant changes in electrical parameters caused by the growth or annealing, or both, of radiation induced trapped charge and interface traps after irradiation. Similar effects also take place during irradiation. f. Accelerated annealing test. A procedure utilizing elevated temperature to accelerate time-dependent effects. 2. Apparatus. The apparatus shall consist of the radiation source, electrical test instrumentation, test circuit board(s), cable, interconnect board or switching system, if used, and appropriate dosimetry measurement system, if used. Adequate precautions shall be observed to obtain an electrical measurement system with sufficient insulation, ample shielding, satisfactory grounding, and with suitable low noise from the main power supply. 60 2.1 Radiation source. The radiation source used in the test shall be the uniform field of a Co gamma ray source. Uniformity of the radiation field in the volume where devices are irradiated shall be within ±10 percent as measured 60 by the dosimetry system, unless otherwise specified. The intensity of the gamma ray field of the Co source shall be known with an uncertainty of no more than ±5 percent. Field uniformity and intensity can be affected by changes in the location of the device with respect to the radiation source and the presence of radiation absorption and scattering materials. 2.1.1 Cobalt-60 source. The gamma ray field of a Cobalt-60 source shall be calibrated at least every 3 years to an uncertainty of no more than ±5 percent as measured with an appropriate dosimetry system whose calibration is traceable to the NIST. Corrections for Cobalt-60 source decay shall be made monthly. 2.2 Dosimetry system. An appropriate dosimetry system shall be provided which is capable of carrying out the measurements required in 3.3. The following American Society for Testing and Materials (ASTM) standards, or other appropriate standards, shall be used: ANSI/ASTM E 666 - Standard Method for Calculation of Absorbed Dose from Gamma or X Radiation. ANSI/ASTM E 668 - Standard Practice for the Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in Radiation-Hardness Testing of Electronic Devices. ASTM E 1250 Standard Method for Application of Ionization Chambers to Assess the Low Energy Gamma Component of Cobalt 60 Irradiators Used in Radiation Hardness Testing of Silicon electronic Devices. METHOD 1019.5 1 of 9 - MIL-STD-750E MIL-STD-750E ASTM E 1275 - Standard Practice for Use of a Radiochromic Film Dosimetry System. ASTM E 1249 - Minimizing Dosimetry