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X9409WS24IZ-2.7 Intersil Corporation QUAD 10K DIGITAL POTENTIOMETER, 2-WIRE SERIAL CONTROL INTERFACE, 64 POSITIONS, PDSO24, 300 MIL, ROHS COMPLIANT, PLASTIC, MS-013AD, SOIC-24 visit Intersil
X9409WS24IZ-2.7T1 Intersil Corporation QUAD 10K DIGITAL POTENTIOMETER, 2-WIRE SERIAL CONTROL INTERFACE, 64 POSITIONS, PDSO24, 300 MIL, ROHS COMPLIANT, PLASTIC, MS-013AD, SOIC-24 visit Intersil
X9409WS24I-2.7T1 Intersil Corporation QUAD 10K DIGITAL POTENTIOMETER, 2-WIRE SERIAL CONTROL INTERFACE, 64 POSITIONS, PDSO24, 300 MIL, PLASTIC, MS-013AD, SOIC-24 visit Intersil
X9409WS24I-2.7 Intersil Corporation QUAD 10K DIGITAL POTENTIOMETER, 2-WIRE SERIAL CONTROL INTERFACE, 64 POSITIONS, PDSO24, 300 MIL, PLASTIC, MS-013AD, SOIC-24 visit Intersil
CC2500_REFDES_062 Texas Instruments CC2500 reference design (62 mil layer spacing) visit Texas Instruments
5962-9760601Q9A Texas Instruments MILITARY DIGITAL SIGNAL PROCESSORS 0-XCEPT -55 to 125 visit Texas Instruments

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MIL-HDBK-217E

Catalog Datasheet MFG & Type PDF Document Tags

65e7

Abstract: 74306 with MIL-HDBK-217E. The MTBF is not a guarantee of useable product lifetime, but is a guide for , 5.1.3.10 of MIL-HDBK-217E. The part failure-rate model, k p , is as follows: determining MTBF values for , . BASE FAILURE RATE The device base failure-rate, Aa, is given in Table 5.1.3.10-3 of MIL-HDBK-217E. The values for LED and photodiodes are shown below. Base Fallure-Rate (from MIL-HDBK-217E, Table , quality factor is given in Table 5.1.3.10-4 of MIL-HDBK-217E. This is reproduced below along with a brief
-
OCR Scan
65e7 74306 05-E7 715E6 23e7 69107

432E-3

Abstract: 57E6 conjunction with MIL-HDBK-217E. The MTBF is not a guarantee of useable product lifetime, but is a guide for , found in section 5.1.3.10 of MIL-HDBK-217E. The part failure-rate model, P, is as follows: P = , device base failure-rate, B, is given in Table 5.1.3.10-3 of MIL-HDBK-217E. The values for LED and photodiodes are shown below. Base Failure-Rate (from MIL-HDBK-217E, Table 5.1.3.10-3) B= 0.00065 , FACTOR The quality factor is given in Table 5.1.3.10-4 of MIL-HDBK-217E. This is reproduced below along
Honeywell
Original
432E-3 57E6 65e9 transistor Transistor 65e8 464E-5 606E6

calculating rectifier circuits MTBF

Abstract: bimetal MIL-HDBK-217F Notice 2 and using MILHDBK-217E. In addition, calculations are presented including , review in the www.irf.com following narrative. 1. Resistors: Originally included in MILHDBK-217E , (Env. = SF, TC = 45°C, VIN = 28V) MIL-HDBK-217E Failure Rate 6 ( per 10 Hours ) MTBF ( Hours , MTBF values calculated using MIL-HDBK-217E and MILHDBK-217F Notice 2 shows a dramatic decrease in the
International Rectifier
Original
AN-1078 ART2815T MIL-HDBK217F calculating rectifier circuits MTBF bimetal transformer mtbf CAPACITOR chip mtbf 217F MIL-HDBK-217

iec 601.1

Abstract: IEC-601-1 % Reliability, MTBF (MIL-HDBK-217E) Zuverlässigkeit, MTBF (MIL-HDBK-217E) >1`000`000 h at
Traco Electronic
Original
IEC-601-1 iec 601.1 IEC601-1 DIL-24 CH-8002
Abstract: CO., LTD. m MATIUO Table-11 Calculate method of estimated failure rate of MIL-HDBK-217E , followings Xp=Xb(Kc X TIsh X 7to X JIcv) â'¢ 10 "'7h Temp. (°C) in MIL-HDBK-217E. Ratio,Applied -
OCR Scan
45VDC 0040X10

TEN 3-2411

Abstract: ten 2411 (MIL-HDBK-217-E) Zuverlässigkeit, MTBF (MIL-HDBK-217-E) >1.1 Mio. h at 25°C Isolation voltage ­
Traco Electronic
Original
TEN 3-2411 ten 2411 24-Pin Plastic DIP 3-0522 ten 3-2413 500VDC IL-HDBK-217-E

EIAJ ED-4701-1

Abstract: EIAJ ED-4701-1 C-111A ] 3.3 MIL-HDBK-217E MILHDBK-217E MIL-HDBK-217E MIL 12 IC/LSI (1) IC/LSI MILHDBK
Toshiba
Original
ED-4701 TC514265DJ TC5118165BFT EIAJ ED-4701-1 EIAJ ED-4701-1 C-111A tc5118165bj tc5117405 a107a TC5118165 ED-4701-1 ED-4701-2 ED-4701-3 ED-4701-4 MIL-STD-202

000000H

Abstract: TEF 2012 13 14 15 22 23 24 General Specification MTBF (MIL-HDBK-217E) Operating Temperature , Specification MTBF (MIL-HDBK-217E) Operating Temperature Isolation Input/Output Input/Case Output
Traco Electronic
Original
000000H TEF 2012 TEF 2411 TEG 0510 Noise dc 12 v TEF 2422

ETS300

Abstract: NT1 RELAY Condition 20 ms MTBF Mean Time Before Failure Ground Fixed, MIL-HDBK-217E Top Oper , Condition 20 ms MTBF Mean Time Before Failure Ground Fixed, MIL-HDBK-217E 1 Mhou rs , Mean Time Before Failure Ground Fixed, MIL-HDBK-217E Top Oper. Ambient Temperature -10
STMicroelectronics
Original
ETS300 NT1 RELAY PS20 isdn-nt1 EN60950

ETS300

Abstract: MIL-HDBK-217-E Mean Time Before Failure Ground Fixed, MIL-HDBK-217E Top Oper. Ambient Temperature Tstg , Ground Fixed, MIL-HDBK-217E 1 Mh -10 +70 o C +85 o C Top Tstg 4/7 , Mean Time Before Failure Ground Fixed, MIL-HDBK-217E 1 Mh -10 +70 o C +85 o
STMicroelectronics
Original

alcatel dc to dc converter

Abstract: 220uF capacitor Condition 20 ms MTBF Mean Time Before Failure Ground Fixed, MIL-HDBK-217E Top Oper , Vrms Standard Condition 20 ms MTBF Mean Time Before Failure Ground Fixed, MIL-HDBK-217E , , MIL-HDBK-217E 1 Mh -10 +70 o C +85 o C et ol s Ob Top Tstg Oper
STMicroelectronics
Original
alcatel dc to dc converter 220uF capacitor EP 950 e517

UL1950

Abstract: (MIL-HDBK-217-E) Zuverlässigkeit, MTBF (MIL-HDBK-217-E) >1 Mio. h at 25°C Isolation voltage ­
Traco Electronic
Original
UL1950 1500VDC EN55022 60VDC

red led

Abstract: 220uF capacitor Ground Fixed, MIL-HDBK-217E 1 Mh -10 +70 o +85 o Top Tstg RPM mode Vi1 , Vrms Standard Condition 20 ms MTBF Mean Time Before Failure Ground Fixed, MIL-HDBK-217E , Condition 20 ms MTBF Mean Time Before Failure Ground Fixed, MIL-HDBK-217E 1 Mh C C
STMicroelectronics
Original
red led

ETS300

Abstract: , MIL-HDBK-217E 1 Mh th MTBF Top Test Condition Min. Oper. Ambient Temperature Typ , Condition Min. Ground Fixed, MIL-HDBK-217E Typ. Max. 1 Unit Mhours Top Oper , , MIL-HDBK-217E 1 Mhours Top Oper. Ambient Temperature -10 +70 ºC Tstg Storage
STMicroelectronics
Original

infineon mtbf

Abstract: ETS300 Ground Fixed, MIL-HDBK-217E 1 Mh -10 o Top Oper. Ambient Temperature according to , , MIL-HDBK-217E 1 Mhou rs Top Oper. Ambient Temperature Tstg 4/7 NPM mode Vi1 , MTBF Mean Time Before Failure Ground Fixed, MIL-HDBK-217E 1 Mhou rs Top Oper
STMicroelectronics
Original
infineon mtbf

ST PS20 datasheet

Abstract: PS20 Vrms Standard Condition 20 ms MTBF Mean Time Before Failure Ground Fixed, MIL-HDBK-217E , Condition 20 ms MTBF Mean Time Before Failure Ground Fixed, MIL-HDBK-217E 1 Mhou rs , Fixed, MIL-HDBK-217E 5 175 Vrms 5 ms 500 MTBF Mean Time Before Failure Top
STMicroelectronics
Original
ST PS20 datasheet

ETS300

Abstract: Mean Time Before Failure Ground Fixed, MIL-HDBK-217E 1 Mh Top Oper. Ambient Temperature , Ground Fixed, MIL-HDBK-217E 1 Mhou rs Top Oper. Ambient Temperature Tstg 4/7 NPM , Output parameters as per Standard Condition Transient Ground Fixed, MIL-HDBK-217E 5 175
STMicroelectronics
Original

infineon mtbf

Abstract: ETS300 Mean Time Before Failure Ground Fixed, MIL-HDBK-217E 1 Mh Top Oper. Ambient Temperature , Ground Fixed, MIL-HDBK-217E 1 Mhou rs Top Oper. Ambient Temperature Tstg 4/7 NPM , Output parameters as per Standard Condition Transient Ground Fixed, MIL-HDBK-217E 5 175
STMicroelectronics
Original

ETS300

Abstract: , MIL-HDBK-217E 1 Mh th MTBF Top 4/10 Oper. Ambient Temperature Test Condition Min , Condition Ground Fixed, MIL-HDBK-217E Min. Typ. Max. 1 Unit Mhours Top Oper. Ambient , 20 ms Ground Fixed, MIL-HDBK-217E 1 Mhours Top Oper. Ambient Temperature -10
STMicroelectronics
Original
Abstract: Temperature Above Case Temperature MTBF (MIL-HDBK-217E, AU @ 90°C) F 105/87°CAV2 85/170 mW2 9/15 -
OCR Scan
5963-2488E

SPAC265

Abstract: power consumption I MTBF 175000 hours at 40 °C max. load according to MILHDBK217E I RoHS , Max. load, 40 °C, 20 Years Mean time before failure Max. load, 40 °C, MILHDBK217E 175
STMicroelectronics
Original
SPAC265 SPAC265-8W EN55011 EN61000-3-2-3 EN61000-42 ENV50204 EN55024
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