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LM195H/883 Texas Instruments Military Grade Ultra Reliable Power Transistor 3-TO -55 to 125 visit Texas Instruments
5962-8777801XA Texas Instruments Military Grade Ultra Reliable Power Transistor 3-TO -55 to 125 visit Texas Instruments
TTL-LOGIC-DATABOOK Texas Instruments TTL-LOGIC-DATABOOK visit Texas Instruments
HFA3101BZ Intersil Corporation Gilbert Cell UHF Transistor Array; SOIC8; Temp Range: -40° to 85°C visit Intersil Buy
HFA3102BZ Intersil Corporation Dual Long-Tailed Pair Transistor Array; SOIC14; Temp Range: -40° to 85°C visit Intersil Buy
HFA3102BZ96 Intersil Corporation Dual Long-Tailed Pair Transistor Array; SOIC14; Temp Range: -40° to 85°C visit Intersil Buy

MIL GRADE TRANSISTOR ARRAY DATA SHEET

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lowest noise audio NPN transistor

Abstract: 4 npn transistor ic 14pin DATA SHEET COMPOUND TRANSISTOR µPA104 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · 9 , transistor array for formation of high speed OR/NOR gates. Its internal transistor configuration and , connection diagram for description of leads. 2 Data Sheet P10709EJ2V0DS00 µPA104 ELECTRICAL , : Substrate should be connected to the lowest voltage point in order to prevent latch-up. Data Sheet , 4 1 2 5 10 20 50 100 Collector Current, IC (mA) Data Sheet P10709EJ2V0DS00 2 0
NEC
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lowest noise audio NPN transistor 4 npn transistor ic 14pin 8 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY MICRO-X TRANSISTOR MARK Q6 C10535E PA104B PA104G PA104B-E1 PA104G-E1

4 npn transistor ic 14pin

Abstract: C10535E DATA SHEET COMPOUND TRANSISTOR µPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · , bipolar transistor array consisting of a common emitter pair and three individual bipolar transistors. It , connection diagram for description of leads. 2 Data Sheet P10708EJ2V0DS00 µPA103 ELECTRICAL , 11 10 9 8 SUB Q4 Q5 Q1 1 2 Q3 Q2 3 4 5 6 Data Sheet , 4 1 2 5 10 20 50 100 Collector Current, IC (mA) Data Sheet P10708EJ2V0DS00 2 0
NEC
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PA103B PA103G PA103B-E1 PA103G-E1

4 npn transistor ic 14pin

Abstract: 8 npn transistor ic 14pin DATA SHEET COMPOUND TRANSISTOR µPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · TWO , APPLICATIONS The µPA102 is a user configurable Silicon bipolar transistor array consisting of two separate , * See performance characteristics for voltage. Data Sheet P10707EJ2V0DS00 3 µPA102 TYPICAL , Data Sheet P10707EJ2V0DS00 2 5 10 20 50 100 Collector Current, IC (mA) 2 0 Noise , (C10535E). Data Sheet P10707EJ2V0DS00 5 µPA102 [MEMO] 6 Data Sheet P10707EJ2V0DS00
NEC
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UPA102G PA102B PA102G PA102B-E1 PA102G-E1

4 npn transistor ic 14pin

Abstract: MIL GRADE TRANSISTOR ARRAY DATA SHEET COMPOUND TRANSISTOR µPA101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · , This Si bipolar transistor array contains six bipolar transistors which have fT 9 GHz. Applications , connection diagram for description of leads. 2 Data Sheet P10706EJ2V0DS00 µPA101 ELECTRICAL , voltage. Data Sheet P10706EJ2V0DS00 3 µPA101 TYPICAL PERFORMANCE CHARACTERISTICS (TA = +25 °C , 0.5 4 1 2 5 10 20 Collector Current, IC (mA) 50 4 Data Sheet P10706EJ2V0DS00 1
NEC
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Silicon Bipolar Transistor Q6 PA101B PA101G PA101B-E1 PA101G-E1

C10535E

Abstract: PA104 . DATA SHEET COMPOUND TRANSISTOR µPA104 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · 9 GHz , GATES DESCRIPTION AND APPLICATIONS The µPA104 is a user-configurable, Si bipolar transistor array , description of leads. 2 Data Sheet P10709EJ2V0DS00 µPA104 ELECTRICAL CHARACTERISTICS (Unless , : Substrate should be connected to the lowest voltage point in order to prevent latch-up. Data Sheet , 4 1 2 5 10 20 50 100 Collector Current, IC (mA) Data Sheet P10709EJ2V0DS00 2 0
Renesas Electronics
Original

smd transistor HX

Abstract: TRANSISTOR SMD MARKING CODE TK available for every product. Please refer to the data sheet for specific ordering information. 2-3 1-888 , Grid Array (CPGA) H: Small Outline Transistor Plastic (SOT) J: Ceramic Dual-in-line Frit Seal (CERDIP , product. Please refer to the data sheet for specific ordering information. 2-4 1-888-INTERSIL or , refer to the data sheet for specific ordering information. 2-5 1-888-INTERSIL or 321-724-7143 , Carrier (PLCC) S: DIL Formed TO-5 T: Can Z: Single-In-Line Plastic (SIP) Blank: Refer to Data Sheet
Intersil
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CD4000 smd transistor HX TRANSISTOR SMD MARKING CODE TK TRANSISTOR SMD MARKING CODE MP smd transistor HX 45 hc221 TRANSISTOR SMD MARKING CODE WM 82CXXX CD22XXX JM38510/

14pin npn transistor

Abstract: C10535E . DATA SHEET COMPOUND TRANSISTOR µPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · TWO , APPLICATIONS The µPA102 is a user configurable Silicon bipolar transistor array consisting of two separate , * See performance characteristics for voltage. Data Sheet P10707EJ2V0DS00 3 µPA102 TYPICAL , Data Sheet P10707EJ2V0DS00 2 5 10 20 50 100 Collector Current, IC (mA) 2 0 Noise , (C10535E). Data Sheet P10707EJ2V0DS00 5 µPA102 [MEMO] 6 Data Sheet P10707EJ2V0DS00
Renesas Electronics
Original
14pin npn transistor

C10535E

Abstract: PA103 . DATA SHEET COMPOUND TRANSISTOR µPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · FIVE , description of leads. 2 Data Sheet P10708EJ2V0DS00 µPA103 ELECTRICAL CHARACTERISTICS (Unless , Q1 1 2 Q3 Q2 3 4 5 6 Data Sheet P10708EJ2V0DS00 7 3 µPA103 , Collector Current, IC (mA) Data Sheet P10708EJ2V0DS00 2 0 Noise Figure, NF (dB) VCC = 3 V f , MOUNTING TECHNOLOGY MANUAL (C10535E). 6 Data Sheet P10708EJ2V0DS00 µPA103 [MEMO] Data Sheet
Renesas Electronics
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MICRO-X TRANSISTOR MARK Q6

Abstract: C10535E . DATA SHEET COMPOUND TRANSISTOR µPA101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · , This Si bipolar transistor array contains six bipolar transistors which have fT 9 GHz. Applications , connection diagram for description of leads. 2 Data Sheet P10706EJ2V0DS00 µPA101 ELECTRICAL , voltage. Data Sheet P10706EJ2V0DS00 3 µPA101 TYPICAL PERFORMANCE CHARACTERISTICS (TA = +25 °C , 0.5 4 1 2 5 10 20 Collector Current, IC (mA) 50 4 Data Sheet P10706EJ2V0DS00 1
Renesas Electronics
Original

4 npn transistor ic 14pin

Abstract: PA1032 DATA SHEET NEC COMPOUND TRANSISTOR _ _ _ _ _ _ _ _ _ _jf P A 103 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · FIVE MONOLITHIC 9 GHz fr TRANSISTORS: Two of these use a common emitter pin , DESCRIPTION AND APPLICATIONS The ¿¿PA103 is a user configurable Silicon bipolar transistor array consisting , quality grade of NEC devices in " S tandard" unless othe rw ise specified in NEC's Data S heets or Data B , PART NUMBER ^PAI03B-E1 ,uPA103G-E1 PACKAGE 14-pin ceramic package 14-pin plastic SOP (225 mil) ._
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PA1032 UPA103B

IC-3368

Abstract: smd transistor 9j DATA SHEET NEC r FIELD EFFECT POWER TRANSISTOR i COMPOUND - ¿ ¿ P A 1600 MONOLITHIC POWER MOS FET ARRAY DESCRIPTION The uPA1600 is Monolithic N-channel Power MOSFET Array that built in , : Output Quality Grade Standard Standard · Gate Protection Diode, built in. ORDERING INFORMATION , ) Please referto "Q uality grade on NEC Sem iconductor Devices" (Docu m ent num ber IEI-1209) published by NEC Corporation to know the specification of quality grade on th e devices and its recom m ended
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PA1600 IC-3368 smd transistor 9j UPA1600GS iso 1207 PA-1600 SMD transistor 6J U PA1600CX PA1600GS TEI-1202 MEI-1202 IEI-1207

u101b

Abstract: DATA SHEET COMPOUND TRANSISTOR _ j f P A HIGH FREQUENCY NPN TRANSISTOR ARRAY 101 FEATURES · · · BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: (Each Transistor has fr 9 GHz , transistor array contains six bipolar transistors which have fT 9 GHz. A pplications include a m ultiplier , -pin ceram ic package 8-pin p lastic SOP (225 mil) H ff a /XPA101G ABSOLUTE MAXIMUM RATINGS (T a = , each transistor. Caution E lectro-static sensitive devices D ocu m e n t No. P 1 0 7 0 6 E J1 V 0 D
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u101b SSGM-50-225B-4

transistor smd za 28

Abstract: solder wire HMP (PLCC) S: DIL Formed TO-5 T: Can Z: Single-In-Line Plastic (SIP) Blank: Refer to Data Sheet for , °C I: Industrial, -25°C to 85°C or -40°C to 85°C (Specified on Data Sheet) M: Military, -55°C to 125 , , Data Communication 4: Analog Component Solutions 5: High Speed Amps, Switch/MUX, ADCs, DACs, Optical , -T5K: 5,000pc Tape and Reel -Eval: Evaluation Boards OPTIONAL ELECTRICAL GRADE To Denote Speed or , Dual-In-Line Metal Seal (SBDIP) E: Small Outline Transistor Plastic (SC-70) F: Ceramic Flatpack G: Available
Intersil
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transistor smd za 28 solder wire HMP transistor smd za 6 ld SOT-23 transistor ZA 16 CDP65C51

transistor smd za

Abstract: smd diode code T7 : Single-In-Line Plastic (SIP) Blank: Refer to Data Sheet for Package Type NOTE: If the part number contains , : Commercial, 0°C to +70°C I: Industrial, -25°C to +85°C or -40°C to +85°C (Specified on Data Sheet) M , Amp, Sensors 3: Interface, Data Communication 4: Analog Component Solutions 5: High Speed Amps , OPTIONAL ELECTRICAL GRADE Boards To Denote Speed or Precision Grading -EC: Enhanced Commercial as , Dual-In-Line Metal Seal (SBDIP) Small Outline Transistor Plastic (SC-70) Ceramic Flatpack Available Small
Intersil
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smd diode code T7 transistor smd xb transistor smd xc INTERSIL CROSS REFERENCE clocks ceramic pin grid array CPGA smd transistor xb
Abstract: DATA SHEET COMPOUND TRANSISTOR uPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · , APPLICATIONS The ¿¿PA103 is a user configurable Silicon bipolar transistor array consisting of a common , ,uPA103B-E1 ,uPA103G-E1 PACKAG E 14-pin ceram ic package 14-pin plastic SO P (225 mil) a I eH eI , - 5 5 to +200 - 5 5 to +125 A bsolute maximum ratings for each transistor. Caution E , mA * M easured by installing a single transistor in a Micro-X package: the value shown is a -
OCR Scan
XPA103G

ua104

Abstract: DATA SHEET COMPOUND TRANSISTOR uPA104 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · · · , transistor array for form ation of high speed O R/NOR gates. Its internal tra nsistor configuration and , ,uPA104B-E1 ^uPAI 04G-E1 PACKAGE 14-pin ceramic package 14-pin plastic SOP (225 mil) - . i 9 Æ E , +125 T stg A bsolute maximum ratings for each transistor. Caution Electro-static sensitive , * M easured by installing a single transistor in a Micro-X package: the value shown is a reference
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ua104

transistor smd za

Abstract: smd transistor HX : DIL Formed TO-5 T: Can Z: Single-In-Line Plastic (SIP) Blank: Refer to Data Sheet for Package Type , : Commercial, 0°C to +70°C I: Industrial, -25°C to +85°C or -40°C to +85°C (Specified on Data Sheet) M , , RTC, Clocks, ATE 2: Reference, DCPs, Buffers, Precision Op Amp, Sensors 3: Interface, Data , : Evaluation Boards Tin Lead Finish -Eval*Z: Pb-Free Evaluation OPTIONAL ELECTRICAL GRADE Boards To Denote , Transistor Plastic (SC-70) Ceramic Flatpack Available Small Outline Transistor Plastic (SOT-23) Thin
Intersil
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SMD transistor Mu SMD TRANSISTOR 1B t CD4000 cross REFERENCE TEPQFN CERAMIC LEADLESS CHIP CARRIER S14 SMD
Abstract: DATA SHEET NEC COMPOUND TRANSISTOR uPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · · · TW O BUILT-IN DIFFER EN TIA L AM PLIFIER CIRCUITS: (Each Transistor has fr 9 GHz) OUTSTANDING , a user configurable Silicon b ip o la rtra n sisto r array consisting of two separate differential , ¿iPA102G-E1 PACKAG E 14-pin ceram ic package 14-pin plastic SO P (225 mil) I IJHki Ü H fl /¿PA102G 10 9 , ·C - 5 5 to +200 - 5 5 to +125 Absolute maximum ratings for each transistor. Caution -
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UPA102B XPA102G

sot 23 code 27A

Abstract: TEPQFN ) S: DIL Formed TO-5 T: Can Z: Single-In-Line Plastic (SIP) Blank: Refer to Data Sheet for Package , 70°C I: Industrial, -25°C to 85°C or -40°C to 85°C (Specified on Data Sheet) M: Military, -55°C to , : Reference, DCPs, Buffers, Precision Op Amp, Sensors 3: Interface, Data Communication 4: Analog Component , Package -Eval: Evaluation Boards OPTIONAL ELECTRICAL GRADE To Denote Speed or Precision Grading as Defined , Outline Transistor Plastic (SC-70) F: Ceramic Flatpack G: Available H: Small Outline Transistor Plastic
Intersil
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sot 23 code 27A cd4000 cmos CERAMIC LEADLESS CHIP CARRIER CLCC intersil cdp65C51 CDP68HC68 MIL-STD-883

mpa1601

Abstract: PA1601 DATA SHEET NEC -Ä - V DESCRIPTION COMPOUND FIELD EFFECT POWER TRANSISTOR uPA1601 MONOLITHIC POWER MOS FET ARRAY The u/PA1601 is Monolithic N-channel Power MOS FET A , /¿PA1601CX ¿¿PA1601GS Package 16-Pin DIP 16-Pin SOP Quality Grade Standard Standard Equivalent Circuits (1 unit) Please re fe rto "Q u a lity grade on NEC S em iconductor Devices" (Docu m ent n um ber IEI-1209) published by NEC C orporation to know the specification o f q u a lity grade on the devices and its recom m
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PA1601 IEI-1213 mpa1601 uPA1601GS transistor SMD 601 Ua1601
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