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MIB51T Datasheet

Part Manufacturer Description PDF Type
MIB51T Micro Electronics INFRARED EMITTING DIODE Scan
MIB51T Micro Electronics Semiconductor Device Data Book Scan
MIB51TA Micro Electronics INFRARED EMITTING DIODE Scan
MIB51TA Micro Electronics Semiconductor Device Data Book Scan

MIB51T

Catalog Datasheet MFG & Type PDF Document Tags

MIB51T

Abstract: 11851 CRO MIB51T INFRARED EMITTING DIODE DESCRIPTION MIB51T is GaAlAs infrared emitting diode molded in T-l 3/4 standard 5mm diameter clear transparent lens. ABSOLUTE MAXIMUM RATINGS Forward Current (Continuous) Pulse Forward Current Reverse Voltage (Continuous) Power Dissipation Operating Temperature Range Lead Soldering Temperature (1/16" from body) * Pulse Width = lOfxs, Duty Ratio = 0.01. 87 (0.34) 1.0 "(0.04) 04.98 '(0.196) 0.75(0.03)_ max. 0.5 _ (0.02) 25.3 (0.99) min. 0.5 (0.02
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11851

MIB51T

Abstract: MIB51T INFRARED EMITTING DIODE DESCRIPTION MIB51T is GaAlAs infrared emitting diode molded in T-l 3/4 standard 5mm diameter clear transparent lens. ABSOLUTE MAXIMUM RATINGS Forward Current (Continuous) Pulse Forward Current Reverse Voltage (Continuous) Power Dissipation Operating Temperature Range Lead Soldering Temperature (1/16" from body) Pulse Width = 10/is, Duty Ratio = 0.01. 04.98 10.196) 87 (0.34) 1.0 All dimension in mm(inch) No Scale Toi. : +/-0.3mm 100mA 1A* 6V 160mW -25 to
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4351G

MIB51T

Abstract: MIB51T INFRARED EMITTING DIODE DESCRIPTION MIB51T is GaAlAs infrared emitting diode molded in T-l 3/4 standard 5mm diameter clear transparent lens. ABSOLUTE MAXIMUM RATINGS Forward Current (Continuous) Pulse Forward Current Reverse Voltage (Continuous) Power Dissipation Operating Temperature Range Lead Soldering Temperature (1/16" from body) 04.98 (0.196) 8.7 (0.34) 1.0 AH dimension in mm{inch) No Scale Toi. : +/-0.3mm 100mA 1A* 6V 160mW -25 to +85°C 260°C for 5 sec. Pulse Width = 10/xs, Duty Ratio
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ML309

Abstract: MICRO ELECTRONICS LTD SIE D bOT17flfi GOÜ1G1S TTH MEHK Infrared Emitting Diodes T -4 I-1 3 TYPE NO. MI31T MI31TA MI32T MI32TA MI37T MIB37T MI38T MIB38T - MI51T MI51TA - MIB51T MIB51TA MIB57T-J MIB57T-K Àp (nm) 940 880 940 880 940 940 940 940 940 880 940 880 940 940 p 0 TYP (mW) 0.5 2.8 0.5 2.8 2.0 2.0 2.0 2.0 1.0 5.0 4.0 8.0 2.62 2.62 1 (mA) 20 20 20 20 20 20 20 20 20 50 20 50 20 20 V f MAX (V) 1.6 1.8 1.6 1.8 2.0 2.0 2.0 2.0 1.6 1.8 1.6 1.8 2.0 2.0 1 (mA) 20 20 20 20 100
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ML309 ML303 ML308

ML309

Abstract: 1-62 1-11 1-15 1-16 1-16 MI31T MI31TA MI32T MI32TA MI33T MIB33T MI38T MIB38T MI51T MI51TA MIB51T MIB51TA M1B57T-J MIB57T-K 940 880 940 880 940 940 940 940 940 880 940 880 940 940 0 3.2mm 0.69" lead
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MGB557D MSB557D MSB557DA MSB557TA MSB558DA QD01414

ML309

Abstract: M151 1.6 1.8 20 20 50 50 T-1 3/4 standard 0.83" lead 1-12 MIB51T MIB51TA 940 880 4.0 8.0 20 50 1.6 1.8 20
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M151
Abstract: Diodes TYPE NO. M I3JT MI31TA MI32T MI32TA MI33T MIB33T M I38T MIB38T MI51T M151TA MIB51T MIB51TA M -
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MOGB517W MOB557D MOB557DR MSB559TA IB57T-J IB57TA-J

2SA532

Abstract: BC109 BC184 BC549 MH8500 MH8700 MI31T MI31TA MI32T MI32TA MI33T MI38T MI51T MI51TA MIB33T MIB38T MIB51T MIB51TA MIB57T-J
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TTP31A TTP32 T1P32A 2SA532 BC109 BC184 BC549 2SC734 Y BC317 MS181A BC159 8 057-2G 1611G 1620G 1621-2G 1623G 1641G

MI51TA

Abstract: MIB51TA Mm p^ MI51TA | m^ B * m^m MIB51TA g â  WfK^^ â  â  INFRARED Ivrxv " DESCRIPTION MI51TA & MIB51TA are GaAlAs infrared emitting diode molded T-l 3/4 standard 5mm diameter clear plastic package, with the lensing effect of the package, and MIB51TA with cup type leadframe. ABSOLUTE MAXIMUM RATINGS , = 0.01. ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL MI51TA MIB51TA UNIT , Iâ'"-â'"¡-2.54(0.1) MIB51TA I i 8.7 (0.34) 1.0 (0.04) 04.98 (0.196) T 0.75(0.03)^r max. ÌJ -Hâ'"e
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hx 002 ncl 058 4351Q

em4070

Abstract: MI51TA Mn ^^¡^ p^ MI51TA I W ^ â  M W MIB51TA g â  W/K^^ â  â  INFRARED 1 ^^ |\ ^^ EM7Zl DESCRIPTION MI51TA & MIB51TA are GaAlAs infrared emitting diode molded T-l 3/4 standard 5mm diameter clear plastic package, with the lensing effect of the package, and MIB51TA with cup type leadframe. ABSOLUTE , , Duty Ratio = 0.01. ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL MI51TA MIB51TA UNIT , Iâ'"-â'"¡-2.54(0.1) MIB51TA I i 8.7 (0.34) 1.0 (0.04) 04.98 (0.196) T 0.75(0.03)^r max. ÌJ -Hâ'"e
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em4070

MI51TA

Abstract: MIB51TA MIS ITA MIB51TA INFRARED EMITTING DIODE DESCRIPTION MI51TA & MIB51TA are GaAlAs infrared emitting diode molded T-l 3/4 standard 5mm diameter clear plastic package, with the lensing effect of the package, and MIB51JA with cup type leadframe. ABSOLUTE MAXIMUM RATINGS Forward Current (Continuous) 100mA Pulse Forward Current 1 A* Reverse Voltage (Continuous) 6V Power Dissipation 180mW Operating Temperature Range , , Duty Ratio = 0.01. ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL MI5ÌTA MIB51TA UNIT
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Abstract: Diodes TYPE NO. M I3JT MI31TA MI32T MI32TA MI33T MIB33T M I38T MIB38T MI51T M151TA MIB51T MIB51TA M -
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I31TA I32TA IB38T I51TA IB51T