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Part : PI3HDMI511AZLEX Supplier : Diodes Manufacturer : Avnet Stock : - Best Price : $0.7939 Price Each : $0.9379
Part : PI3HDMI511ZLE Supplier : Diodes Manufacturer : Avnet Stock : - Best Price : $0.7939 Price Each : $0.9379
Part : PI3HDMI511ZLE Supplier : Diodes Manufacturer : Avnet Stock : - Best Price : $0.7939 Price Each : $0.9379
Part : PI3HDMI511ZLEX Supplier : Diodes Manufacturer : Avnet Stock : - Best Price : $0.7939 Price Each : $0.9379
Part : PI3HDMI511ZLEX Supplier : Diodes Manufacturer : Avnet Stock : - Best Price : $0.7692 Price Each : $0.9231
Part : HMI5100B Supplier : Maple Systems Manufacturer : Allied Electronics & Automation Stock : 6 Best Price : $448.8500 Price Each : $470.1500
Part : HMI5100BN Supplier : Maple Systems Manufacturer : Allied Electronics & Automation Stock : - Best Price : $386.03 Price Each : $403.8500
Part : HMI5100L Supplier : Maple Systems Manufacturer : Allied Electronics & Automation Stock : 3 Best Price : $987.5300 Price Each : $1039.50
Part : HMI5102L Supplier : Maple Systems Manufacturer : Allied Electronics & Automation Stock : 3 Best Price : $650.00 Price Each : $650.00
Part : HMI5103L Supplier : Maple Systems Manufacturer : Allied Electronics & Automation Stock : - Best Price : $695.00 Price Each : $695.00
Part : HMI5121P Supplier : Maple Systems Manufacturer : Allied Electronics & Automation Stock : - Best Price : $1,885.1500 Price Each : $1974.63
Part : HMI5121XL Supplier : Maple Systems Manufacturer : Allied Electronics & Automation Stock : 1 Best Price : $1,486.1801 Price Each : $1,556.7200
Part : HMI5150P Supplier : Maple Systems Manufacturer : Allied Electronics & Automation Stock : - Best Price : $2,144.4900 Price Each : $2,246.2700
Part : HMI5150XL Supplier : Maple Systems Manufacturer : Allied Electronics & Automation Stock : 9 Best Price : $1,735.5400 Price Each : $1,817.9100
Part : PMI510-F110-IU-V1 Supplier : PEPPERL+FUCHS Manufacturer : Allied Electronics & Automation Stock : - Best Price : $546.69 Price Each : $546.69
Part : MI/5/12/FL30/H/GREEN Supplier : Oxley Manufacturer : RS Components Stock : 47 Best Price : £3.75 Price Each : £4.69
Part : MI/5/12/FL30/H/YELLOW Supplier : Oxley Manufacturer : RS Components Stock : 75 Best Price : £4.02 Price Each : £5.21
Part : MI5113-M18 Supplier : Microsemi Manufacturer : Chip1Stop Stock : 25 Best Price : $464.8000 Price Each : $464.8000
Part : GNNMI518 Supplier : LAIRD PLC Manufacturer : Sager Stock : - Best Price : - Price Each : -
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MI51T Datasheet

Part Manufacturer Description PDF Type
MI51T Micro Electronics INFRARED EMITTING DIODE Scan
MI51T Micro Electronics Semiconductor Device Data Book Scan
MI51TA Micro Electronics INFRARED EMITTING DIODE Scan
MI51TA Micro Electronics Semiconductor Device Data Book Scan
MI51TA-2 Micro Electronics INFRARED EMITTING DIODE Scan
MI51TA-3 Micro Electronics INFRARED EMITTING DIODE Scan

MI51T

Catalog Datasheet MFG & Type PDF Document Tags

a106 diode

Abstract: diode A106 CRO DESCRIPTION MI51T is GaAlAs infrared emitting diode molded in T-l 3/4 standard 5mm diameter clear transparent lens. ABSOLUTE MAXIMUM RATINGS Forward Current (Continuous) Pulse Forward Current Reverse Voltage (Continuous) Power Dissipation Operating Temperature Range Lead Soldering Temperature (1/16" from body) * Pulse Width = lOpts, Duty Ratio = 0.01. MI51T INFRARED EMITTING DIODE , (0.06) COLLECTOR "7 FOR MI51T 100mA 1A* 5V 75mW -25 to +85°C 260°C for 5 sec. ELECTRO-OPTICAL
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OCR Scan
a106 diode diode A106

MI51T

Abstract: MI51T INFRARED EMITTING DIODE iw«mi:j:ì}wwìwwwì DESCRIPTION MI51T is GaAlAs infrared emitting diode molded in T-l 3/4 standard 5mm diameter clear transparent lens. ABSOLUTE MAXIMUM RATINGS Forward Current (Continuous) Pulse Forward Current Reverse Voltage (Continuous) Power Dissipation Operating Temperature Range Lead Soldering Temperature (1/16" from body) #4.98(0.196) 05.« t.5(0.06
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OCR Scan
4351G
Abstract: MI51T C R INFRARED EM ITTING DIODE O «4.98(0.196) DESCRIPTION 0.5< .Q Q 2> MI51T is GaAlAs infrared emitting diode molded in T-l 3/4 standard 5mm diameter clear transparent lens. r *5.«! r 1.0(0.04) I i.3 -
OCR Scan
Abstract: ) MIN. 0.62 _ -
OCR Scan
MSGK51W

MI51T

Abstract: ) W 1.3(0.05) 1â'"1.06(0.04) 19.0(0.75) MIN. tt 1.5(0.06) . CATHODE COLLECTOR FOR MI51T RED GREEN
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OCR Scan
6S477

ML309

Abstract: MICRO ELECTRONICS LTD SIE D bOT17flfi GOÜ1G1S TTH MEHK Infrared Emitting Diodes T -4 I-1 3 TYPE NO. MI31T MI31TA MI32T MI32TA MI37T MIB37T MI38T MIB38T - MI51T MI51TA - MIB51T MIB51TA MIB57T-J MIB57T-K Àp (nm) 940 880 940 880 940 940 940 940 940 880 940 880 940 940 p 0 TYP (mW) 0.5 2.8 0.5 2.8 2.0 2.0 2.0 2.0 1.0 5.0 4.0 8.0 2.62 2.62 1 (mA) 20 20 20 20 20 20 20 20 20 50 20 50 20 20 V f MAX (V) 1.6 1.8 1.6 1.8 2.0 2.0 2.0 2.0 1.6 1.8 1.6 1.8 2.0 2.0 1 (mA) 20 20 20 20 100
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ML309 ML303 ML308

ML309

Abstract: M151 Infrared Emitting Diodes TYPEE NO. (nm) P 0 TYP (mW) y 2 91/2 (degree) 1
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OCR Scan
M151

ML309

Abstract: Infrared Emitting Diodes TYPE NO. Xp (ran) Po TYP (mW) 0.5 2.8 0.5 2.8 2.0 2.0 2.0 2.0 1.0 5.0 4.0 8.0 2.62 2.62 IF (mA) 20 20 20 20 20 20 20 20 20 50 20 50 20 20 VF MAX 00 1.6 1.8 1.6 1.8 2.0 2.0 2.0 2.0 1.6 1.8 1.6 1.8 2.0 2.0 IF (mA) 20 20 20 20 100 100 100 100 20 20 20 20 100 100 2 0 Vi (degree) 35 35 35 35 30 18 30 20 50 50 40 40 20 60 PACKAGE CASE NO. 1-4 1-61 1-7 1-8 1-62 1-11 1-15 1-16 1-16 MI31T MI31TA MI32T MI32TA MI33T MIB33T MI38T MIB38T MI51T MI51TA MIB51T
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OCR Scan
M1B57T-J MGB557D MSB557D MSB557DA MSB557TA MSB558DA
Abstract: Diodes TYPE NO. M I3JT MI31TA MI32T MI32TA MI33T MIB33T M I38T MIB38T MI51T M151TA MIB51T MIB51TA M -
OCR Scan
MOGB517W MOB557D MOB557DR MSB559TA IB57T-J IB57TA-J

2SA532

Abstract: BC109 BC184 BC549 MH8500 MH8700 MI31T MI31TA MI32T MI32TA MI33T MI38T MI51T MI51TA MIB33T MIB38T MIB51T MIB51TA MIB57T-J
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OCR Scan
TTP31A TTP32 T1P32A 2SA532 BC109 BC184 BC549 2SC734 Y BC317 MS181A BC159 8 057-2G 1611G 1620G 1621-2G 1623G 1641G

MI51TA

Abstract: MIB51TA Mm p^ MI51TA | m^ B * m^m MIB51TA g â  WfK^^ â  â  INFRARED Ivrxv " DESCRIPTION MI51TA & MIB51TA are GaAlAs infrared emitting diode molded T-l 3/4 standard 5mm diameter clear plastic package, with the lensing effect of the package, and MIB51TA with cup type leadframe. ABSOLUTE MAXIMUM RATINGS , = 0.01. ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL MI51TA MIB51TA UNIT , Micro Hx. Tei: 2343 0181-5 Rev.A MECHANICAL OUTLINE MI51TA 04.98 "(0.196) (0.025) Cathode
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hx 002 ncl 058 4351Q

HX 830

Abstract: MI51TA-2 Iwl I ^^ DESCRIPTION MI51TA-2 & MI51TA-3 is GaAlAs infrared emitting diode molded in T-l 3/4 standard 5mm diameter clear transparent lens. MI51TA-2 MI51TA-3 100mA 100mA 1A* 1A* 5V 5V 200mW 230mW -25 to +85°C 260°C for 5 sec. * Pulse Width = 10/xs, Duty Ratio = 0.01. 04.98 1.3 "(0.05) 0.64lna, (0.025) °'6Z _ V ' (0.024p (0.024) 1.5(0.06) îathode -2.54(0.1) â'¢ All Dimension in mm , =25°C) PARAMETER SYMBOL MI51TA-2 MI51TA-3 UNIT CONDITIONS Radiant Power Output Min Po 0.6 0.8 mW lF=20mA Typ
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OCR Scan
HX 830

em4070

Abstract: MI51TA Mn ^^¡^ p^ MI51TA I W ^ â  M W MIB51TA g â  W/K^^ â  â  INFRARED 1 ^^ |\ ^^ EM7Zl DESCRIPTION MI51TA & MIB51TA are GaAlAs infrared emitting diode molded T-l 3/4 standard 5mm diameter clear plastic package, with the lensing effect of the package, and MIB51TA with cup type leadframe. ABSOLUTE , , Duty Ratio = 0.01. ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL MI51TA MIB51TA UNIT , Micro Hx. Tei: 2343 0181-5 Rev.A MECHANICAL OUTLINE MI51TA 04.98 (0.196) (0.025) Cathode
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OCR Scan
em4070
Abstract: MICRO 0 4 .9 8 MI51TA-2 MI51TA-3 INFRARED EMITTING DIODE D E SC R IPT IO N MI51TA-2 & MI51TA-3 is GaAlAs infrared emitting diode molded in T -l 3/4 standard 5mm diameter clear transparent lens. 87 (0.34) 1.0 j~ (0.04) "(0.196) 1.3 ( 0 .05 ) 4.1 (0.16) I 0.76 1(0.03) (0.025) ° - b ¿ - ' ' (0.024) athode 1.5(0.06) -2.54(0.1) · All Dimension in mm (inch) · N o , H alf Width Viewing Angie Max Typ Typ Typ Ir Xp AX (Ta=25°C) MI51TA-2 0.6 1.0 M I51TA-3 0.8 1.5 -
OCR Scan
I51TA-2

HX 830

Abstract: MI51TA-2 MICRO MI51TA-2 MI51TA-3 INFRARED EMITTING DIODE iiijtmwifH wuaBii iHJWH mim um DESCRIPTION MI51TA-2 & MI51TA-3 is GaAlAs infrared emitting diode molded in T-l 3/4 standard 5mm diameter clear , ) Power Dissipation Operating Temperature Range Lead Soldering Temperature (1/16" from body) MI51TA-2 100mA 1A* 5V 200mW MI51TA-3 100mA IA* 5V 230mW -25 to +85°C 260°C for 5 sec. * Pulse Width = 10/xs, Duty Ratio = 0.01. ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL MI51TA-2 MI51TA-3 UNIT
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OCR Scan

MI51TA

Abstract: MIB51TA MIS ITA MIB51TA INFRARED EMITTING DIODE DESCRIPTION MI51TA & MIB51TA are GaAlAs infrared emitting diode molded T-l 3/4 standard 5mm diameter clear plastic package, with the lensing effect of the package, and MIB51JA with cup type leadframe. ABSOLUTE MAXIMUM RATINGS Forward Current (Continuous) 100mA Pulse Forward Current 1 A* Reverse Voltage (Continuous) 6V Power Dissipation 180mW Operating Temperature Range -25 to +85°C Lead Soldering Temperature (1/16" from body) 260°C for 5 sec. * Pulse Width = 10 /¿s
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OCR Scan
Abstract: Infrared Emitting Diodes TYPE NO. Xp (ran) Po TYP (mW) 0.5 2.8 0.5 2.8 2.0 2.0 2.0 2.0 1.0 5.0 4.0 8.0 2.62 2.62 IF (mA) 20 20 20 20 20 20 20 20 20 50 20 50 20 20 VF MAX 00 1.6 1.8 1.6 1.8 2.0 2.0 2.0 2.0 1.6 1.8 1.6 1.8 2.0 2.0 IF (mA) 20 20 20 20 100 100 100 100 20 20 20 20 100 100 2 0 Vi (degree) 35 35 35 35 30 18 30 20 50 50 40 40 20 60 PACKAGE CASE NO. 1-4 1-61 1-7 1-8 1-62 1-11 1-15 1-16 1-16 MI31T MI31TA MI32T MI32TA MI33T MIB33T MI38T MIB38T MI51T MI51TA MIB51T -
OCR Scan
I31TA I32TA IB38T I51TA IB51T