MHL21336N MHL21336NN 301AP EL516

Technical Data Document Number: MHL21336N Rev. 8, 12/2006 Replaced by MHL21336NN. There are no form, fit or function changes with

Freescale Semiconductor Technical Data Document Number: MHL21336N MHL21336N Rev. 8, 12/2006 Replaced by MHL21336NN MHL21336NN. There are no form, fit or function changes with this part replacement. MHL21336N MHL21336N Designed for ultra - linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA modulation systems. · Third Order Intercept: 45 dBm Typ · Power Gain: 31 dB Typ (@ f = 2140 MHz) · Input VSWR v 1.5:1 Features · Excellent Phase Linearity and Group Delay Characteristics · Ideal for Feedforward Base Station Applications · N Suffix Indicates Lead - Free Terminations 2110 - 2170 MHz 3.0 W, 31 dB RF LINEAR LDMOS AMPLIFIER CASE 301AP 301AP - 02, STYLE 1 Table 1. Absolute Maximum Ratings (TC = 25°C unless otherwise noted) Rating Symbol Value Unit VDD 30 Vdc DC Supply Voltage RF Input Power Pin +5 dBm Storage Temperature Range Tstg - 40 to +100 °C Operating Case Temperature Range TC - 20 to +100 °C Table 2. Electrical Characteristics (VDD = 26 Vdc, TC = 25°C; 50 System) Characteristic Symbol Typ Max Unit IDD Supply Current Min - 500 525 mA Power Gain (f = 2140 MHz) Gp 30 31 33 dB Gain Flatness (f = 2110 - 2170 MHz) GF - 0.15 0.4 dB Power Output @ 1 dB Compression (f = 2140 MHz) P1dB 34 35 - dBm Third Order Intercept (f1 = 2137 MHz, f2 = 2142 MHz) ITO 44 45 - dBm Noise Figure NF - 4.5 5 ARCHIVE INFORMATION ARCHIVE INFORMATION 3G Band RF Linear LDMOS Amplifier dB (f = 2170 MHz) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006, 2007. All rights reserved. RF Device Data Freescale Semiconductor MHL21336N MHL21336N 1 TYPICAL CHARACTERISTICS 55 VDD = 26 Vdc TC = 25_C Gp 30 VDD = 26 Vdc TC = 25_C 50 20 P1dB, ITO (dBm) ITO 10 0 ORL -10 IRL 45 40 P1dB 35 -20 30 1800 2000 2200 2400 2600 25 1800 2800 1900 2000 2100 2200 2300 2400 f, FREQUENCY (MHz) Figure 1. Power Gain, Input Return Loss, Output Return Loss versus Frequency 2500 f, FREQUENCY (MHz) Figure 2. P1dB, ITO versus Frequency 40 600 48 VDD = 26 Vdc f = 2140 MHz 38 VDD = 26 Vdc f = 2140 MHz 47 35 37 550 500 IDD 36 ITO ITO (dBm) 30 I DD (mA) 46 Gp 45 35 P1dB 44 25 34 450 43 20 -40 -20 0 20 40 60 80 100 400 120 42 -40 33 -20 0 20 40 60 80 100 TEMPERATURE (_C) TEMPERATURE (_C) Figure 3. Power Gain, IDD versus Temperature 32 120 Figure 4. ITO, P1dB versus Temperature 2.4 -1420 PHASE ( _ ) -1440 GROUP DELAY -1460 2.1 -1480 -1500 -40 2 -20 0 20 40 60 80 100 TEMPERATURE (_C) Figure 5. Phase(1), Group Delay(1) versus Temperature 1.9 120 VDD = 26 Vdc f = 2110 - 2170 MHz 0.5 2.3 2.2 PHASE 0.6 G F , GAIN FLATNESS (dB) VDD = 26 Vdc f = 2140 MHz GROUP DELAY (nS) -1400 0.4 0.6 0.5 0.4 GF 0.3 0.3 0.2 0.2 ARCHIVE INFORMATION 1600 P1dB (dBm) -40 1400 PHASE LINEARITY (_ ) -30 G p , POWER GAIN (dB) ARCHIVE INFORMATION G p , POWER GAIN/RETURN LOSS (dB) 40 PHASE LINEARITY 0.1 0 -40 0.1 -20 0 20 40 60 80 100 0 120 TEMPERATURE (_C) Figure 6. Gain Flatness, Phase Linearity versus Temperature 1. In Production Test Fixture MHL21336N MHL21336N 2 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS G p , POWER GAIN (dB) 31.6 IDD 36.5 Gp 400 I DD (mA) ITO (dBm) 46.5 500 31.2 37 f = 2140 MHz TC = 25_C 47 600 31.4 36 P1dB 46 35.5 ITO 45.5 31 45 200 23 24 25 26 27 28 29 35 44.5 22 30 34.5 34 23 24 25 26 27 28 VOLTAGE (VOLTS) 30 VOLTAGE (VOLTS) Figure 7. Power Gain, IDD versus Voltage 29 Figure 8. ITO, P1dB versus Voltage -1435 2.3 f = 2140 MHz TC = 25_C 0.35 0.35 f = 2110 - 2170 MHz TC = 25_C -1436 GROUP DELAY (nS) G F , GAIN FLATNESS (dB) 0.3 2.25 GROUP DELAY 0.25 0.25 GF 0.2 -1437 2.2 0.3 0.2 0.15 PHASE -1438 2.15 0.15 PHASE LINEARITY 0.1 0.1 0.05 -1439 22 2.1 23 24 25 26 27 28 29 Figure 9. Group Voltage 1. In Production Test Fixture Delay(1) 0 22 0.05 0 23 24 25 26 27 28 29 VOLTAGE (VOLTS) VOLTAGE (VOLTS) Phase(1), 30 versus PHASE LINEARITY (_ ) 30.8 22 300 PHASE ( _ ) ARCHIVE INFORMATION 47.5 Figure 10. Phase Linearity, Gain Flatness versus Voltage 30 ARCHIVE INFORMATION 700 f = 2140 MHz TC = 25_C P1dB (dBm) 31.8 MHL21336N MHL21336N RF Device Data Freescale Semiconductor 3 PACKAGE DIMENSIONS A A 2X G M T A R 1 2 3 4 K W 4X 0.020 (0.51) M D T B M N L H ARCHIVE INFORMATION F E C 4X P 0.020 (0.51) T SEATING PLANE M A M M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION "F" TO CENTER OF LEADS. S J T S S B M M T DIM A B C D E F G H J K L N P Q R S W INCHES MIN MAX 1.760 1.780 1.370 1.390 0.245 0.265 0.017 0.023 0.080 0.100 0.086 BSC 1.650 BSC 1.290 BSC 0.266 0.280 0.125 0.165 0.990 BSC 0.390 BSC 0.008 0.013 0.118 0.132 0.535 0.555 0.445 0.465 0.090 BSC STYLE 1: PIN 1. 2. 3. 4. CASE: CASE 301AP 301AP - 02 ISSUE E RF INPUT VDD1 VDD2 RF OUTPUT GROUND MILLIMETERS MIN MAX 44.70 45.21 34.80 35.31 6.22 6.73 0.43 0.58 2.03 2.54 2.18 BSC 41.91 BSC 32.77 BSC 6.76 7.11 3.18 4.19 25.15 BSC 9.91 BSC 0.20 0.33 3.00 3.35 13.59 14.10 11.30 11.81 2.29 BSC ARCHIVE INFORMATION 0.020 (0.51) Q 0.008 (0.20) MHL21336N MHL21336N 4 RF Device Data Freescale Semiconductor REVISION HISTORY The following table summarizes revisions to this document. Date 8 Dec. 2006 Description · Added replacement part information, p. 1 ARCHIVE INFORMATION ARCHIVE INFORMATION Revision MHL21336N MHL21336N RF Device Data Freescale Semiconductor 5 How to Reach Us: Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2007. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale's Environmental Products program, go to http://www.freescale.com/epp. MHL21336N MHL21336N Document Number: MHL21336N MHL21336N 6Rev. 8, 12/2006 RF Device Data Freescale Semiconductor