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MH0810 Datasheet

Part Manufacturer Description PDF Type
MH0810 Micro Electronics EPITAXIAL TRANSISTORS FOR 3-5W AF OUTPUT Scan
MH0810 Micro Electronics Semiconductor Device Data Book Scan
MH0810 N/A Shortform Transistor PDF Datasheet Scan

MH0810

Catalog Datasheet MFG & Type PDF Document Tags

BC238 h parameter

Abstract: MH 0810C MH 8100 MH 0810 COMPLEMENTARY EPITAXIAL TRANSISTORS FOR 3-.5W AF OUTPUT MICRO ELECTRDNIC5 The MH8100 (NPN), MH0810 (PNP) are complementary silicon planar epitaxial transistors designed for the output stages of 3â'"5 watt audio amplifiers. They are also suitable for switches up to 3A collector current , . Q2 : MH0810, HFE GROUP B to C, mounted on heat sink. Q3 : BC238, HFE GROUP B. Q4 : BC338, any HFE , : MH0810, HFE GROUP B to C, mounted on heat sink. Q3 : BC238, HFE GROUP B. Q4 : BC338, any HFE GROUP. Â
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BC308 8100C BC238 h parameter MH 0810C hFE Group ME8100 08IOC

BC238 h parameter

Abstract: 5.5w MH 8100 MH 0810 COMPLEMENTARY EPITAXIAL TRANSISTORS FOR 3-.5W AF OUTPUT I V I I G R O ELECTRONICS The MH8100 (NPN), MH0810 (PNP) are complementary CASE TO-220B silicon planar epitaxial transistors designed fo r the output stages of 3 - 5 watt audio amplifiers. They are also suitable , Q1 Q2 Q3 Q4 Q5 : : : : : MH8100, H fe GROUP B to MH0810, HFE GROUP B to BC238, HFE GROUP B. BC338 , to C, mounted on heat sink. MH0810, H fe GROUP B to C, mounted on heat sink. BC238, H fe GROUP B
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5.5w 5v 3w audio amplifier 0I80HW 00T8HH

2n6125

Abstract: MH8700 MH0810 0.2 0.2 1 1 1 2 2 2 2 4 0.5 0.5 1.2 0.8 0.7 0.5 0.5 3 2 1 50 50 5 5 3 MH0816 MH0818 MH0810 MH0816 MH0818 MH0870 MH8100 P P P P N TO
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2n6125 MH8106 MH8108 MH8500 TIP29 TIP29A TIP29B

MH0810

Abstract: MH8100 T MH 8100 MH 0810 COMPLEMENTARY EPITAXIAL TRANSISTORS FOR 3-5W AF OUTPUT rvii The MH8100 (NPN), MH0810 (PNP) are complementary silicon planar epitaxial transistors designed for the output stages of 3â'"5 watt audio amplifiers. They are also suitable for switches up to 3A collector current. CASE TO-220B BCE ABSOLUTE MAXIMUM RATINGS: Collector-Emitter Voltage {VBE = 0) Collector-Emitter Voltage (Base Open) Emitter-Base Voltage Collector Current Collector Peak Current (t
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TA-25

2N6108

Abstract: 2SC1626 Power Transistors TYPE POLA CASE NO. RITY D45C12 MH0810 MH0816 MH0818 MH0870 MH8100 MH8106 MH8108 MH8500 MH8700 TIP29 TIP29A T1P29B TIP30 TIP30A TIP30B TIP31 TIP31A TIP31B TIP31C TIP32 TIP32A TIP32B T1P32C 2N6121 2N6122 2N6123 2N6124 2N6125 2N6126 2N6129 2N6130 2N6131 2N6288 2N6289 2N6290 2N6291 2N6292 2N6293 2N6473 2N6474 2SA473 2SA490 2SA670 2SA671 2SA816 2SB434 2SB435 2SB512 2SB512A P P P P P N N N N N , 4 4 4 4 4 4 4 100+ 3 3 3 50 3+ 3 3 3 D44C12 MH8100 MH8106 MH8108 MH8700 MH0810 MH0816 MH0818 MH0870
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2N6108 2SC1626 TIP32C 2N6132 2N6133 2N6134 2N6111 2N6106
Abstract: MH0810 Transistors Si PNP Power BJT Military/High-RelN V(BR)CEO (V)30è V(BR)CBO (V) I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)12 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.240 @I(C) (A) (Test Condition)500m @V(CE) (V) (Test Condition)2.0 f(T) Min. (Hz) Transition Freq30M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) t(d American Microsemiconductor
Original

MH0810

Abstract: MH8100 MH 8100 MH 0810 COMPLEMENTARY EPITAXIAL TRANSISTORS FOR 3-.5W AF OUTPUT MICRO ELECTRONICS The MH8100 (NPN), MH0810 (PNP) are complementary silicon planar epitaxial transistors designed for the output stages of 3â'"5 watt audio amplifiers. They are also suitable for switches up to 3A collector current, BCE ABSOLUTE MAXIMUM RATINGS: F°r P" n-p devices, voltage and current values are negative. Colfector-Emitter Voltage (VBE = 0) VCES 35V Collector-Emitter Voltage (Base Open) VCEO 30V Emitter-Base Voltage
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2343Q181

B0415

Abstract: b0416 0.5 1 30+ D44C12 MH0810 P TO-220 12 3 30 40 240 # 0.5 2 0.8 2 30 MH8100 MH0816 P TO-220 10 1 60 40
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BD239 BD240 BD239A BD240A BD239B BD415 B0415 b0416 B0633 b0636 B0635 BD416 BD240B

2SB512P

Abstract: tip318 Power Transistors type no. polarity case maximum ratings min hfe vce(sat) V min (MHz) complementary type Pd W) 'c (a) V ceo (V) max â c (a) vce (V) max (V) 'c (a) MH0870 P TO-220 30 4 50 40 240 # 1 2 0.8 2 5 MH8700 MH8100 N TO-22C 12 3 30 40 240 # 0.5 2 0.8 2 30 MH0810 MH8106 INI TO-220 10 1 60 40 240 # 0.2 2 0.5 0.5 50 MH0816 IVI H8108 N TO-220 10 1 80 40 240 # 0.2 2 0.5 0.5 50 MH0818 MH8500 N TO-220 40 4 60 40 240 # 1 2 1.2 3 5 â'" MH8700 N TO-220 30 4 50 40 240 # 1 2 0.8
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2SD331 2SB512P tip318 TIP31N TIP308 TIP298 2sc1060 2N6109 2N6107 2N6110 2N6475 2N6476 2SC1173

2SA532

Abstract: BC109 BC184 BC549 MGB81CA MGB81D MGB81DH MGB81T MGB81TA MGB82D MH0810 MH0816 MH0818 PAGE 16 16 7 8 16 8 8 16 8 9 9 9 23 9 9
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TTP31A TTP32 T1P32A 2SA532 BC109 BC184 BC549 2SC734 Y BC317 MS181A BC159 8 057-2G 1611G 1620G 1621-2G 1623G 1641G

PTC SY 16P

Abstract: t110 94v 0 MH0810 Transistors Si PNP Power BJT Military/High-RelN V(BR)CEO (V)30è V(BR)CBO (V) I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)12 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.240 @I(C) (A) (Test Condition)500m @V(CE) (V) (Test Condition)2.0 f(T) Min. (Hz) Transition Freq30M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) t(d
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PTC SY 16P t110 94v 0 2N2955T PT895 2n6259 ssi ASZ1018 201069F S-171 CH-5400