MGSF1P02 - Datasheet Archive

 

Power MOSFET P-Channel 3 DRAIN SOT-23 Features: 3 1 *Low On-Resistance : 0.35 *Low Input Capacitance: 130 PF *Low Out put

 

MGSF1P02 MGSF1P02 Power MOSFET P-Channel 3 DRAIN SOT-23 Features: 3 1 *Low On-Resistance : 0.35 *Low Input Capacitance: 130 PF *Low Out put Capacitance : 120 PF *Low Threshole : 1.7V(TYE) *Fast Switching Speed : 2.5ns GATE 1 2 2 SOURCE Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGS ±20 V ID 750 mA _ Pulsed Drain Current(1) (t p