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MGFS52BN2122A Datasheet

Part Manufacturer Description PDF Type
MGFS52BN2122A Mitsubishi 2.1-2.2 GHz BAND 160W GaAs FET Original
MGFS52BN2122A Mitsubishi 2.1 - 2.2 GHz Band 160 W GaAs FET Scan

MGFS52BN2122A

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 â'" 2.2 GHz BAND / 160W DESCRIPTION The MGFS52BN2122A is a 160W push-pull type GaAs power FET especially designed for use in 2.1 â , :Channel-case 1 < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 â'" 2.2 GHz BAND / 160W MGFS52BN2122A TYPICAL CHARACTERISTICS Pout , Id , PAE , GAIN , f=2.11GHz Test Condition , band internally matched power GaAs FET > MGFS52BN2122A 2.1 â'" 2.2 GHz BAND / 160W Pout , Id Mitsubishi
Original

mitsubishi 4a fet

Abstract: < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 ­ 2.2 GHz BAND / 160W DESCRIPTION The MGFS52BN2122A is a 160W push-pull type GaAs power FET especially designed for use in 2.1 ­ , Publication Date : Apr., 2011 1 < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 ­ 2.2 GHz BAND / 160W MGFS52BN2122A TYPICAL CHARACTERISTICS Pout , Id , PAE , GAIN , GAIN , PHASE vs , =25deg.C Publication Date : Apr., 2011 2 < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 ­ 2.2
Mitsubishi
Original
mitsubishi 4a fet

GRH111

Abstract: GRH111-1 MITSUBISHI SEMICONDUCTOR MGFS52BN2122Ã' 2.1 - 2.2 GHz BAND 160W G a As FET The MGFS52BN2122A is a 160W push-pull type GaAs Power FET especially designed for use in 2.1 - 2.2GHz band , ¿m (1/7) MITSUBISHI ELECTRIC MGFS52BN2122A RF TEST DATA (W-CDMA signal ,2-tone) Fig.1 Pin vs , 15 20 25 30 35 40 45 50 Pin(dBm) 15 20 25 30 35 40 45 50 Pin(dBm) (2/7) MGFS52BN2122A RF TEST DATA (W-CDMA signal ,2-tone) Fig. 2 MGFS52BN2122A Pin vs. Pout , Id , PAE , Gain , Again , A phase (CW 1
-
OCR Scan
GRH111 GRH111-0 GRH111-27 GRH111-1 GF-49 GR708 GR40-1000 GRM40R223K50PT CM32B475K16AB

MGFS52BN2122A

Abstract: June/2004 MITSUBISHI SEMICONDUCTOR MGFS52BN2122A 2.1 - 2.2GHz BAND 160W GaAs FET Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design
Mitsubishi
Original