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MGFC39V3742A Datasheet

Part Manufacturer Description PDF Type
MGFC39V3742A Mitsubishi 3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET Original
MGFC39V3742A Mitsubishi 3.7-4.2 BAND 8W Internally Matched GaAs FET Scan

MGFC39V3742A

Catalog Datasheet MFG & Type PDF Document Tags

MGFC39V3742A

Abstract: MITSUBISHI SEMICONDUCTOR MGFC39V3742A 3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. OUTLINE DRAWING Unit : millimeters 21.0 +/-0.3 FEATURES (1) 2MIN , MITSUBISHI SEMICONDUCTOR MGFC39V3742A 3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
Mitsubishi
Original
Abstract: < C band internally matched power GaAs FET > MGFC39V3742A 3.7 ­ 4.2 GHz BAND / 8W DESCRIPTION The MGFC39V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ­ 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. OUTLINE DRAWING Unit : millimeters 21.0 +/-0.3 (1) 2MIN FEATURES Class A , Date : Apr., 2011 1 < C band internally matched power GaAs FET > MGFC39V3742A 3.7 ­ 4.2 GHz Mitsubishi
Original
Abstract: < C band internally matched power GaAs FET > MGFC39V3742A 3.7 â'" 4.2 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 â'" 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. Unit : millimeters 21.0 +/-0.3 2MIN (1) (2) 12.9 + , :Channel-case 1 < C band internally matched power GaAs FET > MGFC39V3742A 3.7 â'" 4.2 GHz BAND / 8W Mitsubishi
Original

MGFC39V3742A

Abstract: pBfcU gome f>3'" MITSUBISHI SEMICONDUCTOR MGFC39V3742A 3.7â'"4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V3742A ¡san internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES â'¢ "Class A operation â'¢ Internally matched to 50£2 system â , to case A MITSUBISHI ELECTRIC NOV. ' 97 MITSUBISHI SEMICONDUCTOR MGFC39V3742A to^P3 B
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OCR Scan

MGFC39V3742A

Abstract: MITSUBISHI SEMICONDUCTOR MGFC39V3742A 3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC39V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability. OUTLINE DRAWING Unit : millimeters 21.0 +/-0.3 FEATURES 2MIN (1) 0.6 +/-0.15 (2) (2) 2MIN R-1.6 11.3 12.9 +/-0.2 Class A operation Internally
Mitsubishi
Original
Abstract: MITSUBISHI SEMICONDUCTOR MGFC39V3742A '"T iiS l5, 0 0 ,r. 01'« S '*'1' W DESCRIPTION 3.7~ 4.2GH z BAND 8W INTERNALLY MATCHED GaAs FET The M G F C 3 9 V 3 7 4 2 A is an in te rna lly im p e d a n ce -m a tch e d GaAs power FET especially designed fo r use in 3.7 ~ 4.2 GHz band am plifiers. The herm etically sealed metal-ceramic package guarantees high re lia b ility . FEATURES · · , SEMICONDUCTOR MGFC39V3742A N rt« c 'V r '.v V- 3 -
OCR Scan
Abstract: > MGFC39V3742A 3 .7 -4.2G H z BAND 8 W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS P o , ? ? a d d -
OCR Scan
FC39V37

MGF4919G

Abstract: MGF4919 4500 b MGFS44V2527 * * * MGFC45V2527 * * * MGFC36V3742A MGFC38V3642 * MGFC39V3742A MGFC40V3742
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OCR Scan
MGF1923 MGF4314E MGF4319G MGF4919G MGF0904A MGF0907B MGF4919 14512H mgf1903b mgf4316g MGF1302 MGF1303B MGF1323 MGF14 MGF1412B MGF1403B

MGF2430A

Abstract: MGF4714AP MGF2407A MGF2430A MGFC36V3742A 36dBm â'" 3dBm MGF1402B MGF2407A MGF2445 MGFC39V3742A 39dBm -2dBm MGF1402B
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OCR Scan
MGF4714AP MGF4914D 7.1 power amplifier circuit diagram MGF2430 block diagram of power factor meter mgf2415a MGF4919E MGF4914E MGF49T4D MGF1902B

MGF4937

Abstract: MGFG5H1503 MGFC39V3742A MGFC39V4450A MGFC39V5258 MGFC39V5964A MGFC39V6472A MGFC39V7177A MGFC39V7785A MGFC40V3742
Mitsubishi
Original
MGF4937AM MGF4937 MGFG5H1503 MGF2415 MGFG5H1502 mgfc39v5964 mgf*S45V2527A MGF4921AM MGF4941AL MGF4935AM MGF4934CM H-CX587-R

C42V5964

Abstract: MGF1302 TRANSISTOR MGFC44V3642 MGFC45V3642A MGFC36V3742A MGFC39V3742A MGFC40V3742 MGFC42V3742 MGFC36V4450A MGFC39V4450A
Mitsubishi
Original
C42V5964 MGF1302 TRANSISTOR MGF1601 H2 MARKING SOT-89 mmIC M67760LC MGFC1402 FU-632SEA-V3M FU-632SEA-V6M FU-641SEA-1M1/1M2/1M3/1M4 FU-68SDF-V802M FU-68SDF-V810M FU-445SDF-W1M1B

MGFC39V5964A

Abstract: mgfc30 > MGFC39V3742A 3 .7 -4.2G H z BAND 8 W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS P o , ? ? a d d
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OCR Scan
mgfc30 MGFC36V3742 FC36V3742A GFC36V4460 MGFC36V4460A MGFC38VS258 MGFC36V6964

7785A

Abstract: FC36V 4500 b MGFS44V2527 * * * MGFC45V2527 * * * MGFC36V3742A MGFC38V3642 * MGFC39V3742A MGFC40V3742
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OCR Scan
FC36V 7785A GFC36V52S8 FC36V59M GFC38V3M FC38V GFC39V