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MGF4953A Datasheet

Part Manufacturer Description PDF Type Ordering
MGF4953A Mitsubishi SUPER LOW NOISE INGAAS
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3 pages,
253.66 Kb

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MGF4953A Mitsubishi TRANS JFET N-CH 2V 60MA 3CERAMIC PACKAGE T/R
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5 pages,
199.51 Kb

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MGF4953A

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A , COMPLIANT MGF4953A is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after , Noise GaAs HEMT > MGF4953A Leadless ceramic package Fig.1 Side Top   ï , side view Unit: mm 会 Gate 解 Source 回 Drain < Low Noise GaAs HEMT > MGF4953A Leadless , DRAIN CURRENT ID (mA) 20 VGS (V) < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package ... Mitsubishi
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5 pages,
84.7 Kb

MGF4953A TEXT
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Abstract: June/2004 MITSUBISHI SEMICONDUTOR MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) DESCRIPTION The MGF4953A/MGF4954A super-low noise HEMT (High Electron , minimum parasitic losses. Outline Drawing FEATURES Low noise figure @ f=12GHz MGF4953A : NFmin. = , =500uA VDS=2V,ID =10mA VDS =2V, ID =10mA MGF4953A f=12GHz MGF4954A MGF4954A MIN. -3 -15 -0.1 -12.0 - , (1/5) June/2004 June/2004 MITSUBISHI SEMICONDUTOR MGF4953A/MGF4954A SUPER ... Mitsubishi
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5 pages,
67.94 Kb

s2v 92 mgf4953 MGF4953A MGF4953A/MGF4954A TEXT
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Abstract: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A , CONDITIONS VDS=2V , ID=10mA ORDERING INFORMATION Tape & reel 10,000pcs/reel RoHS COMPLIANT MGF4953A , GaAs HEMT > MGF4953A Leadless ceramic package Fig.1 Top 2.15 -0.10 +0.20 Side A , : mm Gate Source Drain Publication Date : Apr., 2011 2 < Low Noise GaAs HEMT > MGF4953A , HEMT > MGF4953A Leadless ceramic package S PARAMETERS Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 ... Mitsubishi
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5 pages,
135.19 Kb

MGF4953A HEMT marking K TEXT
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Abstract: MITSUBISHI SEMICONDUCTOR MGF4953A/MGF4954A SUPER LOW NOISE tnGaAs HEMT (leadess Ceramic Package) DESCRIPTION The MGF4953A/MGF4954A super-low noise HEMT (High Electron MoMty Transistor} is designed for use in Cto K band amp—era. The lead less ceramic package assures mirwnum parasitic losses FEATURES • Low notse figure @f=12GHz MGF4953A ; NFmin. ■ 0 45dB (Typ ) MGr49S4A : Nrmin. - , > MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) S PARAMETERS (Ta=25°C,VDS=2V,ID ... OCR Scan
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3 pages,
253.66 Kb

MGF4953A Gan hemt transistor x band low noise x band hemt transistor MGF4953A/MGF4954A TEXT
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Abstract: June/2004 MITSUBISHI SEMICONDUCTOR MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) DESCRIPTION Outline Drawing The MGF4953A/MGF4954A super-low noise HEMT , ceramic package assures minimum parasitic losses. FEATURES Low noise figure @ f=12GHz MGF4953A , MGF4953A - 0.40 0.50 dB MGF4954A MGF4954A - 0.60 0.80 dB Gate to drain breakdown , MITSUBISHI (1/5) June/2004 June/2004 MITSUBISHI SEMICONDUCTOR MGF4953A/MGF4954A ... Mitsubishi
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5 pages,
202.63 Kb

MGF4953A/MGF4954A TEXT
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Abstract: Ceramic Package) DESCRIPTION The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility , parasitic losses. Outline Drawing FEATURES • Low noise figure @ f=12GHz MGF4953A : NFmin. = 0.40dB , =10mA MGF4953A - 0.40 0.50 dB f=12GHz MGF4954A MGF4954A - 0.60 0.80 dB MITSUBISHI (1/4) MITSUBISHI SEMICONDUTOR , Drain MITSUBISHI (2/4) June/2000 MITSUBISHI SEMICONDUTOR MGF4953A/MGF4954A SUPER LOW , SOURCE VOi^^fe VGS(V) NF & Gs VS. ID (MGF4953A) 5 10 15 DRAIN CURRBfNOtA)lD(mA) MITSUBISHI (3/4 ... OCR Scan
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4 pages,
197.71 Kb

MGF4954A mgf4953a F4953A/MG F4954A MGF4953A/MGF4954A TEXT
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Abstract: June/2004 MITSUBISHI SEMICONDUCTOR MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) DESCRIPTION Outline Drawing The MGF4953A/MGF4954A super-low noise HEMT , ceramic package assures minimum parasitic losses. FEATURES Low noise figure @ f=12GHz MGF4953A , MGF4953A - 0.40 0.50 dB MGF4954A MGF4954A - 0.60 0.80 dB Gate to drain breakdown , (1/5) June/2004 June/2004 MITSUBISHI SEMICONDUCTOR MGF4953A/MGF4954A SUPER ... Mitsubishi
Original
datasheet

5 pages,
199.52 Kb

transistor GaAs FET s parameters MGF4954A InGaAs HEMT mitsubishi low noise x band hemt transistor mgf4953 mgf4953a MGF4953A/MGF4954A TEXT
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Abstract: Feb./2000 Preliminary Gs NFmin. Associated gain Minimum noise figure MITSUBISHI SEMICONDUCTOR MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) VDS=2V, ID=10mA f=12GHz MGF4953A MGF4954A MGF4954A Fig. 1 Top 12.0 - 13.5 0.45 0.65 -0.50 0.80 dB dB dB Side Bottom +0.20 2.15 -0.10 A 2) .0 (1 2 0) .2 (2 2- Á +0.20 -0.10 05 0. ·} 20 1. À 2-R0.275 À Á Á Â 05 0. ·} 55 . 0 4- B01 Â Á 0.20·}0.1 0.80·}0.1 2.15 2 ... Mitsubishi
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2 pages,
177.57 Kb

MGF4953A TEXT
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Abstract: PACKAGE for INDUSTRIAL USE MGF4953A MGF4941AL MGF4941AL 0.5 MGF4934AM MGF4934AM MGF4931AM MGF4931AM GD-4 1.0 1.5 GD , 12.0 13.5 12 2 10 GD-32 GD-32 MGF4953A 0.40 0.50 12.0 13.0 12 2 10 , Stage LO 1st Stage 2nd Stage Mixer 0.8-1.0dB MGF4953A MGF4953A MGF4953A 0.9-1.1dB APPLICATION EXAMPLES Noise Performance of LNB MGF4953A MGF4934AM MGF4934AM MGF4934AM MGF4934AM ... Mitsubishi
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16 pages,
3725.89 Kb

MGF0907b x-band mmic lna MGF1403B GF-18 CHINA MOBILE BA01254 BA01282 MGF2430A mgf4953a MGF4961B LNB down converter for Ku band mitsubishi mgf mgf4941al MGF4961 MGF1907A mgfc36v-a QVC12 sirio MGF0909A MGFS40H2201G MGFS45H2201G TEXT
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Abstract: Marking manner of MITSUBISHI GaAs FET QL-1104E-A QL-1104E-A (July/2008) [Leadless ceramic package] GD-26 GD-26, 27 Terminal position (from Top View) Top View B 0 1AL B 0 1AL Electrodes direction: Gate Source Drain Drain Gate Source Type Letter Type A MGF4951A/52A MGF4951A/52A B MGF4953A/54A C MGF1951A MGF1951A D MGF1952A MGF1952A E MGF1953A MGF1953A F MGF1954A MGF1954A G MGF4851A MGF4851A `1' means April J MGF4953B MGF4953B `AL' means lot number in month. 'AA, AB ... Mitsubishi
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7 pages,
248.56 Kb

MGF4851A MGF1907 mitsubishi marking lot number MGF4961 mitsubishi top side marking mitsubishi gaAs gaas fet marking MGF4921AM FET GAAS marking a QL-1104E-A Micro-X marking "K" MGF1963A MGF1961A MGF1964A gaas fet micro-X Package gaas fet marking J marking K gaas fet gaas fet marking a gaas fet micro-X Package marking gaas fet marking B GD-26 TEXT
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CEL Cross Reference Results

CEL Part Industry Part Manufacturer Type Comments
NE3210S01 Buy MGF4953A Buy Mitsubishi Closest Equivalent Super Low Noise Pseudomorphic HJ FET RoHS compliant
NE350184C Buy MGF4953A Buy Mitsubishi Closest Equivalent Ultra Low Noise HJ FET / 0.7dB NF @ 20 GHz RoHS compliant
NE3511S02-A Buy MGF4953A Buy Mitsubishi Closest Equivalent Super Low Noise Pseudomorphic HJ FET, RoHS compliant
NE3514S02-A Buy MGF4953A Buy Mitsubishi Closest Equivalent Super Low Noise Pseudomorphic HJ FET, RoHS compliant