500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
2-1437192-5 TE's AMP FST-54A-6 visit Digikey Buy
FST-54A-6 TE's AMP FST-54A-6 visit Digikey Buy
1606KL-05W-B40-L00 NMB Technologies Corporation DC Fan, Axial Construction, 54A, 24V, 1.3W visit Digikey Buy
MC30151V1-000U-A99 SUNON DC Fan, Axial Construction, 54A, 12V, 650W visit Digikey Buy
SD101C-TAP Vishay Semiconductors Rectifier Diode, Schottky, 1 Element, 0.03A, 40V V(RRM), Silicon, DO-35, GLASS, CASE 54A, 2 PIN visit Digikey Buy
VUO52-22NO1 IXYS Corporation Bridge Rectifier Diode, 3 Phase, 54A, 2200V V(RRM), Silicon, ROHS COMPLIANT, MODULE-7 visit Digikey Buy

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : MGF4918D Supplier : - Manufacturer : ComSIT Stock : 732 Best Price : - Price Each : -
Part : MGF4918D29 Supplier : - Manufacturer : ComSIT Stock : 19,950 Best Price : - Price Each : -
Part : MTMGF400TNCM-001 Supplier : LAIRD PLC Manufacturer : Sager Stock : - Best Price : - Price Each : -
Shipping cost not included. Currency conversions are estimated. 

MGF4953A/54A

Catalog Datasheet MFG & Type PDF Document Tags

gaas fet marking B

Abstract: gaas fet micro-X Package marking Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View B 0 1AL B 0 1AL Electrodes direction: Gate Source Drain Drain Gate Source Type Letter Type A MGF4951A/52A B MGF4953A/54A C MGF1951A D MGF1952A E MGF1953A F MGF1954A G MGF4851A `1' means April J MGF4953B `AL' means lot number in month. 'AA, AB
Mitsubishi
Original
MGF4921AM MGF1302 gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet gaas fet marking J MGF1961A MGF4953A/54A GD-30 MGF4931AM MGF4934AM/BM MGF4934CM
Abstract: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A , COMPLIANT MGF4953A is a RoHS compliant product. RoHS compliance is indicated by the letter â'Gâ' after , Noise GaAs HEMT > MGF4953A Leadless ceramic package Fig.1 Side Top  ïƒ' ï , side view Unit: mm 会 Gate 解 Source 回 Drain < Low Noise GaAs HEMT > MGF4953A Leadless , DRAIN CURRENT ID (mA) 20 VGS (V) < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package Mitsubishi
Original

MGF4953A

Abstract: S2V40 June/2004 MITSUBISHI SEMICONDUTOR MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) DESCRIPTION The MGF4953A/MGF4954A super-low noise HEMT (High Electron , minimum parasitic losses. Outline Drawing FEATURES Low noise figure @ f=12GHz MGF4953A : NFmin. = , =500µA VDS=2V,ID =10mA VDS =2V, ID =10mA MGF4953A f=12GHz MGF4954A MIN. -3 -15 -0.1 -12.0 - , (1/5) June/2004 June/2004 MITSUBISHI SEMICONDUTOR MGF4953A/MGF4954A SUPER
Mitsubishi
Original
S2V40 s2v 92 mgf4953 MGF4953A/MGF4954A

MGF4953A

Abstract: HEMT marking K < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A , CONDITIONS VDS=2V , ID=10mA ORDERING INFORMATION Tape & reel 10,000pcs/reel RoHS COMPLIANT MGF4953A , GaAs HEMT > MGF4953A Leadless ceramic package Fig.1 Top 2.15 -0.10 +0.20 Side A , : mm Gate Source Drain Publication Date : Apr., 2011 2 < Low Noise GaAs HEMT > MGF4953A , HEMT > MGF4953A Leadless ceramic package S PARAMETERS Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13
Mitsubishi
Original
HEMT marking K

low noise x band hemt transistor

Abstract: Gan hemt transistor x band MITSUBISHI SEMICONDUCTOR MGF4953A/MGF4954A SUPER LOW NOISE tnGaAs HEMT (leadess Ceramic Package) DESCRIPTION The MGF4953A/MGF4954A super-low noise HEMT (High Electron MoMty Transistor} is designed for use in Cto K band ampâ'"era. The lead less ceramic package assures mirwnum parasitic losses FEATURES â'¢ Low notse figure @f=12GHz MGF4953A ; NFmin. â  0 45dB (Typ ) MGr49S4A : Nrmin. - , > MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) S PARAMETERS (Ta=25°C,VDS=2V,ID
-
OCR Scan
low noise x band hemt transistor Gan hemt transistor x band 49S4A WGF4964A F4953A/M F4954A
Abstract: June/2004 MITSUBISHI SEMICONDUCTOR MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) DESCRIPTION Outline Drawing The MGF4953A/MGF4954A super-low noise HEMT , ceramic package assures minimum parasitic losses. FEATURES Low noise figure @ f=12GHz MGF4953A , MGF4953A - 0.40 0.50 dB MGF4954A - 0.60 0.80 dB Gate to drain breakdown , MITSUBISHI (1/5) June/2004 June/2004 MITSUBISHI SEMICONDUCTOR MGF4953A/MGF4954A Mitsubishi
Original

mgf4953a

Abstract: MGF4954A Ceramic Package) DESCRIPTION The MGF4953A/MGF4954A super-low noise HEMT (High Electron Mobility , parasitic losses. Outline Drawing FEATURES â'¢ Low noise figure @ f=12GHz MGF4953A : NFmin. = 0.40dB , =10mA MGF4953A - 0.40 0.50 dB f=12GHz MGF4954A - 0.60 0.80 dB MITSUBISHI (1/4) MITSUBISHI SEMICONDUTOR , Drain MITSUBISHI (2/4) June/2000 MITSUBISHI SEMICONDUTOR MGF4953A/MGF4954A SUPER LOW , SOURCE VOi^^fe VGS(V) NF & Gs VS. ID (MGF4953A) 5 10 15 DRAIN CURRBfNOtA)lD(mA) MITSUBISHI (3/4
-
OCR Scan
F4953A/MG

mgf4953a

Abstract: mgf4953 June/2004 MITSUBISHI SEMICONDUCTOR MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) DESCRIPTION Outline Drawing The MGF4953A/MGF4954A super-low noise HEMT , ceramic package assures minimum parasitic losses. FEATURES Low noise figure @ f=12GHz MGF4953A , MGF4953A - 0.40 0.50 dB MGF4954A - 0.60 0.80 dB Gate to drain breakdown , (1/5) June/2004 June/2004 MITSUBISHI SEMICONDUCTOR MGF4953A/MGF4954A SUPER
Mitsubishi
Original
InGaAs HEMT mitsubishi transistor GaAs FET s parameters

MGF4953A

Abstract: Feb./2000 Preliminary Gs NFmin. Associated gain Minimum noise figure MITSUBISHI SEMICONDUCTOR MGF4953A/MGF4954A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) VDS=2V, ID=10mA f=12GHz MGF4953A MGF4954A Fig. 1 Top 12.0 - 13.5 0.45 0.65 -0.50 0.80 dB dB dB Side Bottom +0.20 2.15 -0.10 A 2) .0 (1 2 0) .2 (2 2- Á +0.20 -0.10 05 0. ·} 20 1. À 2-R0.275 À Á Á Â 05 0. ·} 55 . 0 4- B01 Â Á 0.20·}0.1 0.80·}0.1 2.15 2
Mitsubishi
Original

MGFS45H2201G

Abstract: MGFS40H2201G PACKAGE for INDUSTRIAL USE MGF4953A MGF4941AL 0.5 MGF4934AM MGF4931AM GD-4 1.0 1.5 GD , 12.0 13.5 12 2 10 GD-32 MGF4953A 0.40 0.50 12.0 13.0 12 2 10 , Stage LO 1st Stage 2nd Stage Mixer 0.8-1.0dB MGF4953A MGF4953A MGF4953A 0.9-1.1dB APPLICATION EXAMPLES Noise Performance of LNB MGF4953A MGF4934AM MGF4934AM
Mitsubishi
Original
MGF1907A MGF1403B MGFS45H2201G MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 GD-16 MGF1908A GD-27 MGF1451A

MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor MGF4316G MGF4319G MGF4714CP MGF4916G MGF4919G MGF4951A MGF4952A MGF4953A MGF4954A 5: New Product
-
Original
MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545