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MGF2430A Datasheet

Part Manufacturer Description PDF Type
MGF2430A Mitsubishi TRANS JFET N-CH 10V 800MA 3GF-17 Original
MGF2430A Mitsubishi Microwave Power GaAs FET Scan
MGF2430A Mitsubishi MICROWAVE POWER GaAs FET Scan
MGF2430A N/A FET Data Book Scan

MGF2430A

Catalog Datasheet MFG & Type PDF Document Tags

MGF2430A

Abstract: < High-power GaAs FET (small signal gain stage) > MGF2430A S to Ku BAND / 1.1W non - matched DESCRIPTION The MGF2430A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band , < High-power GaAs FET (small signal gain stage) > MGF2430A S to Ku BAND / 1.1W non - matched MGF2430A TYPICAL CHARACTERISTICS( Ta=25deg.C ) Po,PAE vs. Pin (f=14.5GHz) MGF2430A S-parameters( Ta , FET (small signal gain stage) > MGF2430A S to Ku BAND / 1.1W non - matched Keep safety first in
Mitsubishi
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MGF2430A

Abstract: MGF2430 MITSUBISHI SEMICONDUCTOR MGF2430A MICROWAVE POWER GaAs FET DESCRIPTION The MGF2430A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES â'¢ High output power P1dB = 30.5 dBm (TYP.) @ 14.5 GHz â'¢ High power gain Glp = 6.5 dB (TYP.) @ 14.5 GHz â'¢ High power added efficiency Tiadd = 27% (TYP.) @ 14.5 GHz, P1dB APPLICATION S to , : Channel to case NOV. ' 97 A MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR MGF2430A
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OCR Scan
MGF2430 fet J 305 Gf-17 ku Band Power GaAs FET GF-17

MGF2430A

Abstract: MGF4714AP MGF2407A MGF2430A MGFC36V3742A 36dBm â'" 3dBm MGF1402B MGF2407A MGF2445 MGFC39V3742A 39dBm -2dBm MGF1402B MGF2407A MGFC36V3742A MGFC42V3742 D>â'"O- - 42dBm 4.4 ~ 5.0 GHz band Amplifier MGF1402B MGF2407A MGF2430A , DEVICES) 5.2 ~ 5.8 GHz band Amplifier MGFI402B MGF2407A MGF2430A MGFC36V 5258 â'" 3dBm- D>â'"1>â'"\> - 36dBm -8dBm - MGF1402B MGF2407A MGF2415A MGF2445 NIGFC39V5258 1>â'"o- -39dBm MGF1402B MGF2407A MGF2430A MGFC36V5258 MGFC42V5258 5.9 ~ 6.4 GHz band Amplifier -2dBm MGF1402B MGF2407A MGF2430A MGFC36V5964A - 36dBm â
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OCR Scan
MGF4714AP MGF4914D MGF1923 MGF4919 7.1 power amplifier circuit diagram block diagram of power factor meter MGF4919E MGF4914E MGF49T4D
Abstract: < High-power GaAs FET (small signal gain stage) > MGF2430A S to Ku BAND / 1.1W non - matched DESCRIPTION The MGF2430A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku , 1 Typ. mA mS < High-power GaAs FET (small signal gain stage) > MGF2430A S to Ku BAND / 1.1W non - matched MGF2430A TYPICAL CHARACTERISTICS( Ta=25deg.C ) Po,PAE vs. Pin (f=14.5GHz) MGF2430A S-parameters( Ta=25deg.C , VDS=10(V),IDS=300(mA) ) S11,S22 vs. f S21,S12 vs. f S Parameters Mitsubishi
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2430A

Abstract: MGF2430A flanged packages. "Typical data at 1 2GHz Die_ MGFC2430 Package MGF2430A MGFC2430 FEATURES · · , added efficiency Tladd = 25% (TYP) @ 12GHz, P1dB MGF2430A FEATURES · · · High output power PidB = , °C) Die_ MGFC2430 Package MGF2430A L M IT S S YM B O L PARAM ETER C O N D IT IO N S , TYPICAL CHARACTERISTICS , ) MGF2430A P 1dB> G LP v s - V DS Po, ^la d d VS. P|N (f = 14.5GHz) O o. c 111 £ s D a. H 3 O
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OCR Scan
2430A MGFC2400 MGF2400 F2430A 2430-T02
Abstract: MITSUBISHI SEMICONDUCTOR MGF2430A MICROWAVE POW ER G aA s FE T DESCRIPTION The MGF2430A , power GaAs FET w ith fiers. an N-channel sch o ttky gate, is designed fo r use in S to Ku band a m p li FEATURES · · · High o u tp u t power PldB = 30.5 dBm (TYP.) @ 14.5 GHz High power gain G lp = 6.5 dB (TYP.} T?add = 27% (TYP.) @ 14,5 GHz @ 14.5 GHz, PldB High power added efficiency , - NOV. 197 A MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR MGF2430A -
OCR Scan

MGF4302A

Abstract: MGF4404A - 154 - f « * té 33 ^ W 14 (Ta=25"C) sa £ ít â'¬ « & « à V* (V) I* (A) Pd/Pch (W) Igss (max) (A) Ids (min) (A) s (max) (A) s (min) (S) * (typ) (S) V 1-' H:» * (V) * * r} * Vgs (V) Vds (V) (min) (V) (max) (V) Vos (V) Id (A) Vds (V) Id (A) MGF2430 Ha MW PA GaAs N D -15 GDO -15 0 900m D 5 MGF2430A na MW PA GaAs N D -15 GDO -15 0 , f=12GHz, ldBÅ'Ãfc?. MGF2430 Gp=6dB.Pout=0. 8Wmin f=14.5GHz. ldBÅ'ffis?. MGF2430A
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OCR Scan
MGF4301A MGF4302A MGF4303A MGF4304A MGF4305A MGF4401A MGF4404A MGF4403A MGF4402A 12GHz

MGF2430

Abstract: MGF2430A MITSUBISHI SEMICONDUCTOR MGF2430A MICROWAVE POWER GaAs FET MITSUBISHI ELECTRIC Mitsubishi
Mitsubishi
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gaAs FET

GF-17

Abstract: gw 340 HIGH POWER G aAs FET M G F16 0 1 B /1 801 B /09xxx/24xxx Series Typical Characteristics Type PldB (dBm) 21.8 23.0 28.0 34.0 37.0 40.0 24.5 27.5 30.5 32.0 I \ GW: (dB) 8 9 13 8 11 10 8 7.5 6.5 5 Ì :H f 1 = (GHz) 8 8 1.65 1.65 2.3 2.3 14.5 14.5 14.5 12 " Outline GD-10 GD-10 GF-7 GF-7 GF-21 GF-21 GF-17 GF-17 GF-17 GF-2 MGF1601B MG F1801B MQF0904A MGF0905A MGF090BB MQF0907B MQF2407A MGF241SA MGF2430A MGF244B
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OCR Scan
gw 340 MGF1601 GD10

MGFS45H2201G

Abstract: MGFS40H2201G MGF2445A MGF0951P MGF2430A MGF0953P MGF0913A 30 MGF2415A MGF0918A GF-17 26 , -17 MGF2430A 29 30.5 - 5.5 - - 27 14.5 10 0.3 - 30 GF-17 MGF2445A , MGF2407A MGF2430A MGF2445A MGFK38A 7 7 5.5 5.5 7 MGF2407A 6W MGF2430A
Mitsubishi
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MGF1907A MGF1403B MGFS45H2201G MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF4953A MGF4941AL MGF4934AM MGF4931AM GD-16 MGF1908A

MGF2430

Abstract: MGF2430A Channel to case 4-34 A MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR MGF2430A
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OCR Scan

MGF1200

Abstract: MGF4310 MGF180IB C GF-11 MGF2407Ã' A GF-17 MGF24I5A B GF-17 Flange Type MGF2430A C GF-17 MGF2445 D GF
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OCR Scan
MGF1102 MGF1302 MGF1200 MGF1304 MGF1412 MGF4310 MGF1100 MGF4301 MGF1303B MGFI323 MGFI412B MGF1423B
Abstract: MITSUBISHI SEMICONDUCTOR MGF2430A MICROWAVE POWER GaAs FET DESCRIPTION The M G F 2 4 3 0 A , pow er GaAs F E T w ith an N-channel schottky gate, is designed fo r use in S to Ku band a m p li­ fiers. FEATURES â'¢ High o u tp u t power â'¢ High pow er gain â'¢ High pow er added efficiency P1dB = 3 0 .5 dBm (T Y P .) @ 14 .5 G H z G LP = 6 .5 dB (T Y P .) r?add = 27% (TYP.) @ 1 4 .5 G H z @ 14.5 GHz, P1dB APPLICATION S to Ku band -
OCR Scan

MGF4919G

Abstract: MGF4919 MGF0907B MGF1601B MGF1801B MGF2407A MGF2415A MGF2430A MGF2445 * Si * * * -8 -15 -15 -15 -15 -15 -15 -15 -15
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OCR Scan
MGF4314E MGF4919G MGF0904A MGFC45V2527 MGFC38V3642 14512H mgf1903b MGF1323 MGF14 MGF1412B MGF1425B MGF1902B MGF1903B

MGF2415A

Abstract: MGF2430A TYPICAL CHARACTERISTICS( Ta=25deg.C ) Po,PAE vs. Pin (f=14.5GHz) MGF2430A S-parameters( Ta
Mitsubishi
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MGF2415

Abstract: =14.5GHz) MGF2430A S-parameters( Ta=25deg.C , VDS=10(V),IDS=150(mA) ) S11,S22 vs. f S21,S12 vs. f S Parameters
Mitsubishi
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MGF2415

MGF4937

Abstract: MGFG5H1503 MGF0905A GF-21 MGF0906B GF-17 MGF0921A GF-50 MGF0920A GF-7 MGF0952P MGF2430A , MGF2407AL MGF2415AL MGF2430AL MGF2445AL MGF4841AL## MGF4841CL## Typ. 35.5 38.5 37.0 37.0 40.0 , MGF2407A 11 Down Conv. Up Conv. MGF2407A 11 MGF2430A 10 MGF2445A 9 MGFC36V 8
Mitsubishi
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MGF4937AM MGF4937 MGFG5H1503 MGFG5H1502 mgfc39v5964 mgf*S45V2527A MGF0904 MGF4921AM MGF4935AM MGF4934CM H-CX587-R KI-1311

BUZ90af

Abstract: hv82 -15 MGF1303B-15 MGF1403B-01 MGF1423B-01 MGF1601B-01 MGF2407A-01 MGF2430A-01 MGF4316G-01 MGF4319G
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BUZ90af hv82 MGF4919G-01 BUZ80AF1 6n60 MGF1302-15 BF1005 BLF244/B BSP149 BSP17 SO-20

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1801B.S2P MGF1801B.S2P MGF1801B.S2P MFG2407A.S2P MGF2415A.S2P MGF2430A.S2P MGF2445A.S2P L/S Band , MGF0920A MGF0921A MGF1601B MGF1801B MGF1801BT MGF2407A MGF2415A MGF2430A MGF2445A P1dB (dBm
Mitsubishi
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C42V5964 MGF1302 TRANSISTOR H2 MARKING SOT-89 mmIC M67760LC MGFC1402 M57721 FU-632SEA-V3M FU-632SEA-V6M FU-641SEA-1M1/1M2/1M3/1M4 FU-68SDF-V802M FU-68SDF-V810M FU-445SDF-W1M1B

2SC3355 SPICE MODEL

Abstract: transistor C2003 MGF2445A MGF0951P MGF2430A MGF0953P MGF0913A 30 MGF2415A MGF0918A GF-17 26 , -17 MGF2430A 29 30.5 - 5.5 - - 27 14.5 10 0.3 - 30 GF-17 MGF2445A , MGF2407A MGF2430A MGF2445A MGFK38A 7 7 5.5 5.5 7 MGF2407A 6W MGF2430A
Agilent Technologies
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2SC3355 SPICE MODEL transistor C2003 C319B RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 LF2810A LF2802A F2001 F2002 F2003 F2004