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MGF2430A Datasheet

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MGF2430A N/A FET Data Book
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2 pages,
78.53 Kb

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MGF2430A Mitsubishi Microwave Power GaAs FET
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2 pages,
82.56 Kb

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MGF2430A Mitsubishi MICROWAVE POWER GaAs FET
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2 pages,
82.56 Kb

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MGF2430A Mitsubishi TRANS JFET N-CH 10V 800MA 3GF-17
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3 pages,
233.99 Kb

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MGF2430A

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: < High-power GaAs FET (small signal gain stage) > MGF2430A S to Ku BAND / 1.1W non - matched DESCRIPTION The MGF2430A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band , < High-power GaAs FET (small signal gain stage) > MGF2430A S to Ku BAND / 1.1W non - matched MGF2430A TYPICAL CHARACTERISTICS( Ta=25deg.C ) Po,PAE vs. Pin (f=14.5GHz) MGF2430A S-parameters( Ta , FET (small signal gain stage) > MGF2430A S to Ku BAND / 1.1W non - matched Keep safety first in ... Mitsubishi
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3 pages,
119.49 Kb

MGF2430A TEXT
datasheet frame
Abstract: MITSUBISHI SEMICONDUCTOR MGF2430A MICROWAVE POWER GaAs FET DESCRIPTION The MGF2430A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku band amplifiers. FEATURES • High output power P1dB = 30.5 dBm (TYP.) @ 14.5 GHz • High power gain Glp = 6.5 dB (TYP.) @ 14.5 GHz • High power added efficiency Tiadd = 27% (TYP.) @ 14.5 GHz, P1dB APPLICATION S to , : Channel to case NOV. ' 97 A MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR MGF2430A ... OCR Scan
datasheet

2 pages,
82.55 Kb

ku Band Power GaAs FET Gf-17 fet J 305 MGF2430 MGF2430A TEXT
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Abstract: MGF2407A MGF2407A MGF2430A MGFC36V3742A MGFC36V3742A 36dBm — 3dBm MGF1402B MGF1402B MGF2407A MGF2407A MGF2445 MGF2445 MGFC39V3742A MGFC39V3742A 39dBm -2dBm MGF1402B MGF1402B MGF2407A MGF2407A MGFC36V3742A MGFC36V3742A MGFC42V3742 MGFC42V3742 D>—O- - 42dBm 4.4 ~ 5.0 GHz band Amplifier MGF1402B MGF1402B MGF2407A MGF2407A MGF2430A , DEVICES) 5.2 ~ 5.8 GHz band Amplifier MGFI402B MGFI402B MGF2407A MGF2407A MGF2430A MGFC36V MGFC36V 5258 — 3dBm- D>—1>—\> - 36dBm -8dBm - MGF1402B MGF1402B MGF2407A MGF2407A MGF2415A MGF2415A MGF2445 MGF2445 NIGFC39V5258 NIGFC39V5258 1>—o- -39dBm MGF1402B MGF1402B MGF2407A MGF2407A MGF2430A MGFC36V5258 MGFC36V5258 MGFC42V5258 MGFC42V5258 5.9 ~ 6.4 GHz band Amplifier -2dBm MGF1402B MGF1402B MGF2407A MGF2407A MGF2430A MGFC36V5964A MGFC36V5964A - 36dBm â ... OCR Scan
datasheet

15 pages,
348.97 Kb

MGFC38V HP8970B mgf4918 mgf2415a MGFX35 MGF0909A MGF2407A of fet DC bias of gaas FET MGF0904A MGF1923 7.1 power amplifier circuit diagram mgf2445 block diagram of power factor meter MGF2430 MGF4914D MGF1402B MGF4919 MGF4714AP MGF2430A TEXT
datasheet frame
Abstract: < High-power GaAs FET (small signal gain stage) > MGF2430A S to Ku BAND / 1.1W non - matched DESCRIPTION The MGF2430A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku , 1 Typ. mA mS < High-power GaAs FET (small signal gain stage) > MGF2430A S to Ku BAND / 1.1W non - matched MGF2430A TYPICAL CHARACTERISTICS( Ta=25deg.C ) Po,PAE vs. Pin (f=14.5GHz) MGF2430A S-parameters( Ta=25deg.C , VDS=10(V),IDS=300(mA) ) S11,S22 vs. f S21,S12 vs. f S Parameters ... Mitsubishi
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3 pages,
85.82 Kb

MGF2430A TEXT
datasheet frame
Abstract: flanged packages. "Typical data at 1 2GHz Die_ MGFC2430 MGFC2430 Package MGF2430A MGFC2430 MGFC2430 FEATURES · · , added efficiency Tladd = 25% (TYP) @ 12GHz, P1dB MGF2430A FEATURES · · · High output power PidB = , °C) Die_ MGFC2430 MGFC2430 Package MGF2430A L M IT S S YM B O L PARAM ETER C O N D IT IO N S , TYPICAL CHARACTERISTICS , ) MGF2430A P 1dB> G LP v s - V DS Po, ^la d d VS. P|N (f = 14.5GHz) O o. c 111 £ s D a. H 3 O ... OCR Scan
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5 pages,
147.23 Kb

MGFC2430 MGF2430A MGF2430 2430A MGFC2400 MGF2400 TEXT
datasheet frame
Abstract: MITSUBISHI SEMICONDUCTOR MGF2430A MICROWAVE POW ER G aA s FE T DESCRIPTION The MGF2430A , power GaAs FET w ith fiers. an N-channel sch o ttky gate, is designed fo r use in S to Ku band a m p li FEATURES · · · High o u tp u t power PldB = 30.5 dBm (TYP.) @ 14.5 GHz High power gain G lp = 6.5 dB (TYP.} T?add = 27% (TYP.) @ 14,5 GHz @ 14.5 GHz, PldB High power added efficiency , - NOV. 197 A MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR MGF2430A ... OCR Scan
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2 pages,
43.35 Kb

MGF2430A TEXT
datasheet frame
Abstract: - 154 - f « * té 33 ^ W 14 (Ta=25"C) sa £ ít € « & « Ü V* (V) I* (A) Pd/Pch (W) Igss (max) (A) Ids (min) (A) s (max) (A) s (min) (S) * (typ) (S) V 1-' H:» * (V) * * r} * Vgs (V) Vds (V) (min) (V) (max) (V) Vos (V) Id (A) Vds (V) Id (A) MGF2430 MGF2430 Ha MW PA GaAs N D -15 GDO -15 0 900m D 5 MGF2430A na MW PA GaAs N D -15 GDO -15 0 , f=12GHz, ldBŒÎfc?. MGF2430 MGF2430 Gp=6dB.Pout=0. 8Wmin f=14.5GHz. ldBŒffis?. MGF2430A ... OCR Scan
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2 pages,
78.53 Kb

MGFC39V6471 MGFC36V7785 MGFC36V4450 MGF2430A MGF2445 MGF4303A MGF4302 mgf4304 MGF4305A MGF4401A MGF4301 MGFK25M4045 MGF4301A 12GHz MGF2430 MGF2430A MGF4402A MGF2430 MGF2430A MGF4403A MGF2430 MGF2430A MGF2430 MGF2430 MGF2430A MGF4304A MGF4302A MGF4404A TEXT
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Abstract: MITSUBISHI SEMICONDUCTOR MGF2430A MICROWAVE POWER GaAs FET MITSUBISHI ELECTRIC Mitsubishi ... Mitsubishi
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3 pages,
233.98 Kb

gaAs FET MGF2430A MGF2430 TEXT
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Abstract: HIGH POWER G aAs FET M G F16 0 1 B /1 801 B /09xxx/24xxx Series Typical Characteristics Type PldB (dBm) 21.8 23.0 28.0 34.0 37.0 40.0 24.5 27.5 30.5 32.0 I \ GW: (dB) 8 9 13 8 11 10 8 7.5 6.5 5 Ì :H f 1 = (GHz) 8 8 1.65 1.65 2.3 2.3 14.5 14.5 14.5 12 " Outline GD-10 GD-10 GD-10 GD-10 GF-7 GF-7 GF-21 GF-21 GF-21 GF-21 GF-17 GF-17 GF-17 GF-17 GF-17 GF-17 GF-2 MGF1601B MGF1601B MG F1801B F1801B MQF0904A MQF0904A MGF0905A MGF0905A MGF090BB MGF090BB MQF0907B MQF0907B MQF2407A MQF2407A MGF241SA MGF241SA MGF2430A MGF244B MGF244B ... OCR Scan
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1 pages,
55.55 Kb

MGF1601 MGF0905A gw 340 GD10 GF-17 TEXT
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Abstract: MGF2445A MGF2445A MGF0951P MGF0951P MGF2430A MGF0953P MGF0953P MGF0913A MGF0913A 30 MGF2415A MGF2415A MGF0918A MGF0918A GF-17 GF-17 26 , -17 MGF2430A 29 30.5 - 5.5 - - 27 14.5 10 0.3 - 30 GF-17 GF-17 MGF2445A MGF2445A , MGF2407A MGF2407A MGF2430A MGF2445A MGF2445A MGFK38A MGFK38A 7 7 5.5 5.5 7 MGF2407A MGF2407A 6W MGF2430A ... Mitsubishi
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16 pages,
3725.89 Kb

MGF0907b x-band mmic lna MGF1403B GF-18 CHINA MOBILE BA01254 BA01282 MGF2430A mgf4953a MGF4961B LNB down converter for Ku band mitsubishi mgf mgf4941al MGF4961 MGF1907A mgfc36v-a QVC12 sirio MGF0909A MGFS40H2201G MGFS45H2201G TEXT
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Abstract: Channel to case 4-34 A MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR MGF2430A ... OCR Scan
datasheet

2 pages,
74.25 Kb

MGF2430A MGF2430 F2430A TEXT
datasheet frame
Abstract: MITSUBISHI SEMICONDUCTOR MGF2430A MICROWAVE POWER GaAs FET DESCRIPTION The M G F 2 4 3 0 A , pow er GaAs F E T w ith an N-channel schottky gate, is designed fo r use in S to Ku band a m p li­ fiers. FEATURES • High o u tp u t power • High pow er gain • High pow er added efficiency P1dB = 3 0 .5 dBm (T Y P .) @ 14 .5 G H z G LP = 6 .5 dB (T Y P .) r?add = 27% (TYP.) @ 1 4 .5 G H z @ 14.5 GHz, P1dB APPLICATION S to Ku band ... OCR Scan
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2 pages,
56.52 Kb

MGF2430A TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
! MGF2430A (Ta=25deg. C, VDS=10V, lDS=300mA) ! From 1996/1997 GaAs FET/MMIC Data book # GHZ S MA R 50 ! Freq. S11 S21 S12 S22 ! GHz (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 4.0 0.934 -153.0 1.641 57.0 0.030 18.0 0.513 -132.0 6.0 0.900 -168.0 1.109 34.0 0.035 19.0 0.620 -142.0 8.0 0.853 173.0 0.927 13.0 0.043 20.0 0.699 -161.5 10.0 0.813 153.0 0.830 -13.0 0.052
/datasheets/files/mitsubishi/docs/s2p/mgf2430a.txt
Mitsubishi 18/01/1999 0.67 Kb TXT mgf2430a.txt