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MG200Q2YS40 Datasheet

Part Manufacturer Description PDF Type
MG200Q2YS40 Toshiba TRANS IGBT MODULE N-CH 1200V 200A 7(2-109C1A) Original
MG200Q2YS40 Toshiba Silicon N-channel IGBT GTR module for high power switching, chopper applications Original

MG200Q2YS40

Catalog Datasheet MFG & Type PDF Document Tags

MG200Q2YS40

Abstract: Toshiba MG200Q2YS40 MG200Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS40 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (max , current Screw torque (Terminal / mounting) 1 A A 2001-08-16 MG200Q2YS40 Electrical , resistance Rth (j-c) 2 °C / W 2001-08-16 MG200Q2YS40 3 2001-08-16 MG200Q2YS40 4 2001-08-16 MG200Q2YS40 5 2001-08-16 MG200Q2YS40 RESTRICTIONS ON PRODUCT USE 000707EAA
Toshiba
Original
Toshiba MG200Q2YS40 2-109C1A

Toshiba MG200Q2YS40

Abstract: MG200Q2YS40 MG200Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS40 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs (Max , current Screw torque (Terminal / mounting) 1 A A 2001-05-11 MG200Q2YS40 Electrical , resistance Rth (j-c) 2 °C / W 2001-05-11 MG200Q2YS40 3 2001-05-11 MG200Q2YS40 4 2001-05-11 MG200Q2YS40 5 2001-05-11 MG200Q2YS40 RESTRICTIONS ON PRODUCT USE 000707EAA
Toshiba
Original

Toshiba MG200Q2YS40

Abstract: MG200Q2YS40 MG200Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS40 High Power Switching , (Terminal / mounting) 1 2001-08-16 MG200Q2YS40 Electrical Characteristics (Ta = 25 , 0.6 0.8 0.5 1.5 3.0 0.5 0.096 0.25 V µs °C / W µs Unit µA mA V V pF 2 2001-08-16 MG200Q2YS40 3 2001-08-16 MG200Q2YS40 4 2001-08-16 MG200Q2YS40 5 2001-08-16 MG200Q2YS40 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the
Toshiba
Original

Toshiba MG200Q2YS40

Abstract: TOSHIBA MG200Q2YS40 Mf i ?nnn?Y , subject to change w ith o u t notice. 1997 03-03 1/5 - TOSHIBA MG200Q2YS40 ELECTRICAL , SJ MG200Q2YS40 GATE-EMITTER VOLTAGE Vq e (V) TOSHIBA CAPACITANCE C (pF) FORWARD , O 1 > H S* OE O Ö H g H 1 W o MG200Q2YS40 Ln TOSHIBA MG200Q2YS40 1000
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OCR Scan

Z1506

Abstract: Toshiba MG200Q2YS40 T O SH IB A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS40 MG200Q2YS40 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm 4 -F ast-o n Tab #110 0 6.5 ±0.3 · · · , 03-03 1/5 - T O SH IB A MG200Q2YS40 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL , X r tO ^sl O O vIJt -A :! : : ·a ' o : ;a ' H I o S3 MG200Q2YS40 , · . > > u i T O SH IB A MG200Q2YS40 SAFE OPERATING AREA 1000 < o < Ü REVERSE
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OCR Scan
Z1506 200Q2YS40

Toshiba MG200Q2YS40

Abstract: LT-15V TOSHIBA MG200Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2 YS40 HIGH POWER , /5 TOSHIBA MG200Q2YS40 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST , MG200Q2YS40 400 ü 300 200 100 vce - vge 12 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VQE (V) 12 VCE - , (nC) 1997-03-03 3/5 TOSHIBA MG200Q2YS40 switching time - ià switching time - rq COMMON , TOSHIBA MG200Q2YS40 safe operating area reverse bias soa * SINGLE NONREPETITIVE PULSE Tc = 25Â
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OCR Scan
LT-15V YS40 OHS03 JE transistor 961001EAA2

K643

Abstract: mg200q2 TO SH IBA TO SH IBA GTR M O D ULE SILICON N CHANNEL IGEST MG200Q2YS40 MG200Q2YS40 HIGH PO W , 643 TO SH IBA MG200Q2YS40 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Gate , ^ j GATE-EMJTTER VOLTAGE \' qe , (?s ) COI.LECTOR CURRENT lc (A) S W IT C H IN G T IM E (,* ) GATE R E S IS T A N C E MG200Q2YS40 TO SH IBA _MG200Q2YS40 SAFE OPERATING AREA REVERSE
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OCR Scan
K643 GE647
Abstract: T O SH IB A MG200Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS40 Unit in mm , b je ct t o ch a n g e w it h o u t n otice. 1997 03-03 1/5 - T O SH IB A MG200Q2YS40 , £ O P3 < O r , o S3 MG200Q2YS40 U J a so RG (0) o O O K SWITCHING TIME (^s) GATE , ) TOSHIBA CAPACITANCE C (pF) T O SH IB A MG200Q2YS40 REVERSE BIAS SOA SAFE OPERATING AREA -
OCR Scan

MG20002YS40

Abstract: MG200Q2YS40 HIGH P O W E R SW ITC H IN G APPLICATIO N S. M O T O R C O N T R O L APPLICATIO N S. · · H igh I n p u t Im pedance High Speed tf = 0 .5 /< s (Max.) t r r = 0.G/ , A UNIT V V A 303 MG200Q2YS40 ELECTRICAL C H A RA C TERISTIC S (Ta = 25°C) C H A R A CTER , - MG200Q2YS40 SAKB OPEKATING A1U5A 1000 (A) Ic CURRENT 600 300 too 60 30 * SIN G LE N O , V , (V ) 308 MG200Q2YS40 TYPICAL VCESAT (IC ) TYPICAL SWITCHING ENERGY (IC) COLLECTOR
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OCR Scan
MG20002YS40 2-109C

TOSHIBA IGBT

Abstract: igbt based high frequency inverter derating data for the MG200Q2YS40. If an IGBT module is to be operated at high case temperatures then the , switching-loss. Figure 1 shows the ratio of switching-loss to total-loss for an MG200Q2YS40 used in an inverter , MG200Q2YS40, the maxi mum case temperature allowed for inverter phase currents to 200 A rms. Load power-factor
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OCR Scan
TOSHIBA IGBT igbt based high frequency inverter failure-rate 30V2YS4O V11S41

MG15J6ES40

Abstract: MG300J2YS50 MG75Q2YS40 MG100Q2YS42 MG150Q2YS40 MG200Q1US41 MG200Q2YS40 MG300Q1US41 MG300Q2YS40 MG400Q1US41 MG500Q11JS1
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OCR Scan
MG15J6ES40 MG300J2YS50 MG25Q2YS40 MG300Q2YS4 MG2SJ6KS40 MG50J2YS50 MG50J6KS50 MG75J2YS50 MG75J6KS50

mg500q1us1

Abstract: mg75j6es50 . 61 MG200Q2YS40 . 61 MG300Q1US41
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OCR Scan
MG100J2YS50 MG50Q2YS40 mg500q1us1 mg75j6es50 mg100j6es5 MIG20J901H E87989 MG50J6F MG75J6ES50 MG100J6ES50 MG150J2YS50

GT80J101

Abstract: MG75J6ES50 . . 297-302 MG200Q2YS40 . . 303-309 MG300Q1US41 . 310-315 MG300Q2YS40 . . 316-323
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OCR Scan
GT60M301 GT80J101 MG360V1US41 gt50j101 GT8J101 GT8J102 GT8Q101 GT15J101 GT15J102 GT8Q102

MG200J2YS21

Abstract: MG30J6ES1 MG200Q2YS9 MG200Q2YS11 MG200Q2YS40 MG200Q2YS91 MG20G6EL1 MG25J1BS11 MG25J2YS1 MG25J2YS9 MG25J2YS40 MG25J6ES1
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OCR Scan
MG100J2YS91 MG100J6ES40 MG150J2YS40 MG200J2YS21 MG25Q6ES1 MG25Q6ES40 MG30J6ES1 MG400J1US11 MG75J2YS40 MG400Q1US11 MG100J1BS11 MG100J2YS1 MG100J2YS9 MG100J2YS40 MG100J6ES1

MG150N2YS40

Abstract: MG100J2YS45 75Q 2Y S11 MG100Q2YS40 MG150Q2YS40 MG200Q2YS40 MG30002YS9 MG 50Q 2YS40 MG75Q 2YS40 MG100Q2YS91
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OCR Scan
MG50Q1BS1 MG200N1US41 MG100G2YS1 MG100J2YS45 MG200J2YS40 MG150J2YS45 MG150N2YS40 MG15N6ES42 mg75n2ys40 mg25n2ys40 T8J101 T8J102 T15J101 T15J102 GT15J103 T25J101

MG40001US41

Abstract: MG806ES42 ] WG15002YS40 (35] MG200Q2YS40 (351 M6300Û2YS40 [35] Promotion Line-up 1200 V ES MG806ES42 [37b
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OCR Scan
MG40001US41 mg150j1 MG400J1US51 MG800J1US51 MG300J1US51 MG40J2YS50 MG200J2YS50 MG400J2VS50

MG75J2YS40

Abstract: MG200J2YS45 MG200Q2YS11 MG200Q2YS40 MG200Q2YS91 MG20G6EL1 MG25J1BS11 MG25J2YS1 MG25J2YS9 MG25J2YS40 MG25J6ES1 MG25J6ES40
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OCR Scan
MG150Q2YS11 MG200J2YS45 MG30J6ES11 MG50J6ES40 MG75J2YS1 MG75J2YS45 20L6P44 10L6P44 MG100J6ES45 MG100J6ES91 MG100M2YK1 MG100Q2YK1 MG100Q2YS1 MG100Q2YS9

2-94D4A

Abstract: MG200J2YS50 1 MG150Q2YS51 1200 200 400 3,6 150 50 100 1250 2-109C4A 2 MG200Q2YS40 1200 200 400 4,0 200 300 500
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OCR Scan
MG300Q1US51 2-95A1A MG400J2YS50 2-95A4A MG75Q2YS50 2-94D4A 2-94A2A 2-109A4A 2-109F1A 2-109D1A

IGBT 200A 1200V

Abstract: T0247 MG15Q6ES42 MG200J2YS50 MG200Q1US41 MG200Q2YS40 MG200Q2YS50 MG25Q6ES42 MG300J2YS50 MG300Q1US41
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OCR Scan
BUP212 BUP313D BUP314 BUP314D IRG4PC50FD IRG4PC50UD IGBT 200A 1200V T0247 T0220AB IGBT IRG4BC20KD IGBT 1200V 60A BUP213 BUP313

IGBT cross reference semikron eupec

Abstract: IGBT cross reference semikron TOSHIBA 108x62 HALF BRIDGE 1200 150 DIM200MHS12 MG200Q2YS40 TOSHIBA 108x62 HALF
Dynex
Original
FZ1600R12KF4 FZ800R12KF4 BSM300GB60DLC IGBT cross reference semikron eupec IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec MG200J2YS50 mitsubishi 150Ne120 DS5468 DS5468-2 FZ1200R33KF2 DIM1200ESM33 DIM1600FSM12

G50Q2YS40

Abstract: MG8Q6ES42 MG15Q6ES42 MG200J2YS50 MG200Q1US41 MG200Q2YS40 MG200Q2YS50 MG25Q6ES42 MG300J2YS50 MG300Q1US41
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OCR Scan
GT8G101 MG8Q6ES42 G50Q2YS40 G75Q1BS11 MIG30J103H MIG50J904H mg150q1js mg50j1bs11 M 205 648 GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101
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