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Part Manufacturer Description Datasheet BUY
V62/11601-01YE-T Texas Instruments HALF BRDG BASED MOSFET DRIVER visit Texas Instruments
UCC27211ADRM Texas Instruments IC HALF BRDG BASED MOSFET DRIVER, MOSFET Driver visit Texas Instruments
CA3240EZ Intersil Corporation Dual, 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output; PDIP8; Temp Range: -40° to 85°C visit Intersil Buy
CA3240AEZ Intersil Corporation Dual, 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output; PDIP8; Temp Range: -40° to 85°C visit Intersil Buy
UCC3817REF Texas Instruments BiCMOS Power Factor Preregulator visit Texas Instruments
UC3706QTR Texas Instruments IC 1.5 A 2 CHANNEL, PUSH-PULL BASED MOSFET DRIVER, PQCC20, PLASTIC, LCC-20, MOSFET Driver visit Texas Instruments

METAL OXIDE SEMICONDUCTOR

Catalog Datasheet MFG & Type PDF Document Tags

M68020

Abstract: MC68020/EC020 ACRONYM LIST BCD â'" Binary-Coded Decimal CAAR â'" Cache Address Register CACR â'" Cache Control Register CCR â'" Condition Code Register CIR â'" Coprocessor Interface Register CMOS â'" Complementary Metal Oxide Semiconductor CPU â'" Central Processing Unit CQFP â'" Ceramic Quad Flat Pack DDMA â , Complementary Metal Oxide Semiconductor IEEE â'" Institute of Electrical and Electronic Engineers ISP â , â'" Master Stack Pointer NMOS â'" n-Type Metal Oxide Semiconductor PAL â'" Programmable Array Logic
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OCR Scan
M68020

Mil-Std-883 Wire Bond shear Method 2011

Abstract: MIL-STD-883 method 2019 MOS Cap Metal Oxide Semiconductor Single Layer Capacitor BENEFITS · · · · Very Stable , Comment For TiW / Ni / Au 16 MOS Cap Metal Oxide Semiconductor Single Layer Capacitor MOS , Metal Oxide Semiconductor Single Layer Capacitor Group I (100%) Inspection Cap / DF IR High Pot / DW Q , minimum; cap , designs are welcome. Please contact your local representative. HOW TO ORDER MS Series Code Metal on
AVX
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Mil-Std-883 Wire Bond shear Method 2011 MIL-STD-883 method 2019 MIL-STD-883 MIL-STD-202 MIL-C-49464A

MIL-STD-883 Method 2019

Abstract: MOS Cap Metal Oxide Semiconductor Single Layer Capacitor BENEFITS â'¢ â'¢ â'¢ â'¢ Very , VDC Comment For TiW / Ni / Au 17 MOS Cap Metal Oxide Semiconductor Single Layer Capacitor , 125 1 80 1 19 MOS Cap Metal Oxide Semiconductor Single Layer Capacitor ESAMPLE S21 , available as special orders. 15 to 27 pF 18 33 to 56 pF 10 to 12 pF MOS Cap Metal Oxide , MS 20 3 S 100 M Series Code Metal on Silicon Case Size Square Size in mils
AVX
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Abstract: ATC // AVX MOS Single Layer Capacitors Metal Oxide Semiconductor ATC//AVX Thin Film Technologies offers semi-custom thin film Metal Oxide Semiconductor (MOS) Single Layer Capacitors suitable for RF/ microwave and millimeter-wave applications. The silicon oxide dielectric is fabricated with high temperature processing resulting in excellent uniformity and stability. ATC//AVX Thin Film Technologies' unique , Capacitors Metal Oxide Semiconductor Standard Wafers Offered and Thickness N+ (Arsenic doped); 0.001-0.005 American Technical Ceramics
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MOS SIngle Layer Capacitors

Abstract: Capacitors ATC // AVX MOS Single Layer Capacitors Metal Oxide Semiconductor ATC//AVX Thin Film Technologies offers semi-custom thin film Metal Oxide Semiconductor (MOS) Single Layer Capacitors suitable for RF/ microwave and millimeter-wave applications. The silicon oxide dielectric is fabricated with , diced on tape ATC # 001-1088 Rev. A; 5/10 ATC // AVX MOS Single Layer Capacitors Metal Oxide Semiconductor Standard Wafers Offered and Thickness N+ (Arsenic doped); 0.001-0.005 Ohm-cm resistivity
American Technical Ceramics
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MOS SIngle Layer Capacitors Capacitors Single Layer Capacitors Thin-Film Technologies Thin Film Technologies Electrical Specifications

ML5207

Abstract: ML5227 Oxide Semiconductor Field Effect Transistor) · 3 MK5207 MOSFET(Metal Oxide Semiconductor Field , OKI SEMICONDUCTOR CO., LTD. TEL: +81 (42) 663-1111 FAX: +81 (42) 665-6620 550-1, Higashiasakawacho, Hachioji-shi 193-8550, Japan 2009.12.7 OKI SEMICONDUCTOR Li-ion IC 5~13 Li-ion OKI SEMICONDUCTOR Li-ion "MK5207" 12 IC ML5207 IC ML5227 IC 1/ 2 3 Flash / Flash , Li-ion Li-ion / OKI SEMICONDUCTOR Li-ion "MK5207" 80V 5-13 Li-ion ±35mV @Ta=25
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ML5227-ML5207 QFP44-P-910-0 li-ion ML5207 QFP44-P-910-0.80-2K TQFP-48P ML522 80-2K TQFP48-P-0707-0

MK5207

Abstract: ML5227-ML5207 -0707-0.50-K · 1 bypass bypass · 2 MK5207 Metal Oxide Semiconductor Field Effect Transistor · 3 ()MK5207 Metal Oxide Semiconductor Field Effect Transistor - , OKI SEMICONDUCTOR CO., LTD. TEL: +81 (42) 663-1111 FAX: +81 (42) 665-6620 550-1, Higashiasakawacho, Hachioji-shi 193-8550, Japan 2009 12 7 OKI SEMICONDUCTOR 513 OKI SEMICONDUCTOR MK5207 12 ML5207 ML5227 1 2 3 OKI SEMICONDUCTORTianjin Nanda Qiangxin IC
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transistor 513 663111 ML520744 QFPQFP44-P-910-0 ML522748 TQFPTQFP48-P-0707-0

MK5207

Abstract: ML5207 / MK5207 MOSFET(Metal Oxide Semiconductor Field Effect Transistor) ( ) . · 3: ( ) . MK5207 MOSFET(Metal Oxide Semiconductor Field Effect Transistor) . , . , OKI SEMICONDUCTOR CO., LTD. TEL: +81 (42) 663-1111 FAX: +81 (42) 665-6620 550-1, Higashiasakawacho, Hachioji-shi 193-8550, Japan 2009 12 7 OKI SEMICONDUCTOR Li-ion IC 5 ~13 Li-ion , OKI SEMICONDUCTOR Li-ion , , MK5207 12 . IC . ML5207
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c744 diodes

Abstract: oscillator IC Devices CMOS The output stage uses CMOS (Complementary Metal Oxide Semiconductor) devices. The output waveform amplitude swings between VDD and VSS (see Figure 1). CMOS (Complementary Metal Oxide Semiconductor) VDDVSS(Figure 1 ) VDD VDD Q Q VSS VSS Figure 1. CMOS output circuit and waveform
Nippon Precision Circuits
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c744 diodes oscillator IC X065 TRC091090

RT820

Abstract: MIP826 . Silicon Metal Oxide Semiconductor Type IC MIP824 CMOS Type Electro Luminescent Lamp Driver , N2 ELB Silicon Metal Oxide Semiconductor Type IC MIP825 CMOS Type Electro Luminescence , fosc/256 Logic Circuit Silicon Metal Oxide Semiconductor Type IC MIP826 CMOS Type Electro
Panasonic
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RT820 RT330 IN3744 MIP824/MIP825/MIP826 TSSONF10D-G1 230VP-P 200VP-P

IC 7555 datasheet

Abstract: 7555 ic MIS/MOS Single Layer Capacitors Metal Insulator Semiconductor/Metal Oxide Semiconductor For applications in RF, Microwave and GHz ranges, AVX offers MIS/MOS Capacitors. These are Single Layer Capacitors (SLCs) that use Silicon Nitride or Silicon Dioxide to produce small, high Q, temperature stable , Voltage (V) 80 90 100 110 MIS/MOS Single Layer Capacitors Metal Insulator Semiconductor/Metal Oxide Semiconductor EXAMPLE S21 AND Q VERSUS FREQUENCY (DEFINE MEASUREMENTS) Typical MOSCaps
AVX
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IC 7555 datasheet 7555 ic S-MOS00M1006-N
Abstract: MIS/MOS Single Layer Capacitors Metal Insulator Semiconductor/Metal Oxide Semiconductor For applications in RF, Microwave and GHz ranges, AVX offers MIS/MOS Capacitors. These are Single Layer Capacitors (SLCs) that use Silicon Nitride or Silicon Dioxide to produce small, high Q, temperature stable, high break down voltage, low leakage capacitors. To ease assembly, AVX offers a wide range of , Single Layer Capacitors Metal Insulator Semiconductor/Metal Oxide Semiconductor EXAMPLE S21 AND Q AVX
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Abstract: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOSâ"¢ E6 Power Transistor IPx60R600E6 Data Sheet Rev. 2.0, 2010-04-12 Final In d u s tr ia l & M u l ti m a r k e t - -
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60R600E6

CMOS 4000

Abstract: , payable on June 1, 1998, to holders of record on May 15, 1998. Dallas Semiconductor Corporation develops, manufactures and markets high performance Complementary Metal Oxide Semiconductor (CMOS) integrated circuits , ) 371-3748 Investor.Relations@dalsemi.com DALLAS SEMICONDUCTOR CORPORATION DECLARES QUARTERLY DIVIDEND DALLAS, TEXAS.Dallas Semiconductor Corporation (DS/NYSE) today announced that its Board of Directors , ://www.dalsemi.com/ Dallas Semiconductor
Dallas Semiconductor
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CMOS 4000

texas battery management

Abstract: toshiba battery Semiconductor Corporation develops, manufactures and markets high performance Complementary Metal Oxide , E-mail: Investor.Relations@dalsemi.com DALLAS SEMICONDUCTOR CORPORATION ANNOUNCES LICENSING AGREEMENT WITH TOSHIBA BATTERY CO., LTD. DALLAS, TEXAS.Dallas Semiconductor Corporation (DS/NYSE) announced , Semiconductor's battery management technology embodied in U.S. Patent Nos. 5,592,069 and 5,694,024. Toshiba , exchange for the payment of license fees and royalties to Dallas Semiconductor. The terms of the Patent
Dallas Semiconductor
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texas battery management toshiba battery

tiris

Abstract: tiris rfid Metal Oxide Semiconductor Hexadecimal Hertz ID I/O ISR Identification Input/Output Interrupt , mA MCR mm MOS-FET MPT MSB ms Milliampere Modem Control Register Millimeter Metal Oxide Semiconductor - Field Effect Transistor Multipage Transponder Most Significant Bit Millisecond PC PTT
Texas Instruments
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S2510 tiris tiris rfid transistor s2000 texas instruments transistor manual tiris trm manual

Sony CMOS

Abstract: . Dallas Semiconductor Corporation develops, manufactures and markets high performance Complementary Metal Oxide Semiconductor (CMOS) integrated circuits and semiconductorbased systems that provide innovative , DATE: May 8, 1998 DALLAS SEMICONDUCTOR CORPORATION ANNOUNCES LICENSING AGREEMENT WITH SONY CORPORATION DALLAS, TEXAS.Dallas Semiconductor Corporation (DS: NYSE) announced today that it has concluded a Patent License Agreement with Sony Corporation covering Dallas Semiconductor's battery
Dallas Semiconductor
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Sony CMOS
Abstract: him a solid understanding of the direction we need." Dallas Semiconductor Corporation develops, manufactures and markets high performance Complementary Metal Oxide Semiconductor (CMOS) integrated circuits , E-mail: Investor.Relations@dalsemi.com DALLAS SEMICONDUCTOR CORPORATION Appoints Jack von Gillern as Vice President of Sales DALLAS, TEXAS . . . . Dallas Semiconductor Corporation (DS/NYSE) today , / Dallas Semiconductor Dallas Semiconductor
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mcz 300 1bd

Abstract: SIT Static Induction Transistor , , CCD* CMOS* * (Charge Coupled Device: ) * (Complementary Metal Oxide Semiconductor , (D) G a A s(3-5 ) MOSFET Metal Oxide Semiconductor FET FET. J-FET , . (FET) MOSFET MESFET Metal Semiconductor Field Effect Transistor . , : Semiconductors Published by TOSHIBA CORPORATION Semiconductor Company . 21 , Semiconductor Company of Toshiba Corporation Printed in Korea 2 Engineering Planning Division/e-Business
Toshiba
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mcz 300 1bd SIT Static Induction Transistor HgCdTe philips igbt induction cooker UJT pin identification Photo DIAC

M27205

Abstract: IEE802 10 M27205 XAUI M27205 IEEE802.3ae M27205 SkyRail CMOS(complementary metal oxide semiconductor) 4 SerDes 13.4Gbps 4 1.4W M27205 MAC(Media access controller) XGMII (10 Gigabit Media
Mindspeed Technologies
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IEE802 CX27201 M27207 M27211 1875G 8B/10B
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