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METAL OXIDE SEMICONDUCTOR

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Metallization Metal Mask Resulting in Gate Metal and Metal Interconnects FIGURE 12 Passivation Oxide , of oxide is grown over the poly which will act as an insulator between the poly and the metal , National Semiconductor Application Note 310 Kenneth Karakotsios June 1983 The MM54HC MM54HC MM74HC MM74HC , P-well CMOS process single layer poly single layer metal P-well process with oxide-isolated transistors , well is ion implanted into the substrate A thin layer of oxide allows ions to be implanted through it ... National Semiconductor
Original
datasheet

10 pages,
1495.29 Kb

AN-310 AN-310 national C1995 CD4011B cd4011b national DM74LS00 DM74S00 metal oxide in capacitor MM54HC MM74C00 MM74HC00 AN NOT gate TL Equivalent MM74HC TEXT
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Abstract: recessed oxide changed to a silicided second polysilicon layer and switched to an all tungsten Metal , zero encroachment recessed oxide a silicided poly interconnect layer and an all tungsten metal , INTRODUCTION National Semiconductor's proprietary one micron BiCMOS III process is used to , latest advances in semiconductor processing technology We've taken advantage of the experience we've , latest developments in semiconductor processing And we've taken advantage of techniques used in our ... National Semiconductor
Original
datasheet

4 pages,
349.68 Kb

C1995 AN-705 national AN-705 110-16 Bicmos Processes TEXT
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Abstract: Mask, Resulting in Gate Metal and Metal Interconnects FIGURE 12. Passivation Oxide, Deposited , insulating layer of oxide, so the metal may be connected to gate and field poly, as well as to source and , Fairchild Semiconductor Application Note June 1983 Revised March 2003 High-Speed CMOS (MM74HC MM74HC , silicon gate P-well CMOS process single layer poly, single layer metal, P-well process with , silicon dioxide (SiO2) (Figure 1). Silicon dioxide, also called oxide acts as both a mask for certain ... Fairchild Semiconductor
Original
datasheet

9 pages,
4706.16 Kb

MM74HC00 MM74C00 DM74S00 DM74LS00 CD4011B AN-310 AN005044 mm74hc MM74HC TEXT
datasheet frame
Abstract: shape of the diffusion layer, oxide film and metal wiring formed on the wafer. Continuous efforts are , [ 2 ] Semiconductor Reliability Contents 1. Reliability Concept , Semiconductor Substrates. 18 Si-SiO2 , Gate Oxide Film , . 51 i [2] Semiconductor Reliability Following the introduction of 3.0-micron devices (64K ... Toshiba
Original
datasheet

56 pages,
676.95 Kb

tunnel diode GaAs injection molding machine wire diagram position sensitive diode circuit QFP100 smd transistor C3 SSOP30 "tunnel diode" wire bonding TOSHIBA DIODE GLASS MOLD toshiba lateral mos TOSHIBA passivation diode MOLD TOSHIBA Thyristor smd transistor marking xy ed27 smd diode EM 231 WIRING DIAGRAM corona discharge circuit simulation koike relays TEXT
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Abstract: module DMIM Double MIM capacitor module METAL2 Top metal 2 module THKMET3 Thick metal 3 module METAL4 Top metal 4 module THKMET NMVMOS Very high resistance polysilicon 1 module , CAPPOLY Thick gate oxide module for HV transistors CAPPOLY XRPOLY Mid gate oxide module for HV , module PMVMOS HVMOSTHK ISOMOS Thick gate oxide module BURDIF Not if CEEPROM Isolated MOS module HVMOSMID HVMOSMID Mid gate oxide module NMVMOS MOS5 Descriptions MOS5A ... X-FAB Semiconductor Foundries
Original
datasheet

2 pages,
64.23 Kb

XH035 library inkjet module 0.35 um CMOS gate area poly silicon resistor power mos transistor selection Ultrasonic Piezoelectric hv 102 nmos transistor 0.35 um analog CMOS Process Family xh03 XH035 cmos transistor 0.35 um TEXT
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Abstract: Technology with: Applications 1000 nm Box Oxide - Dielectric Isolated Mixed-Signal (multi voltage systems) 250 nm Active Silicon 25 nm Gate Oxide Thickness - High Temperature - High Voltage - , - 42 V Automotive Board Net Poly1 NIMP buried oxide n-well Poly1 CIMP - fully dielectric isolated twin well 3 metal layers with high temperature option up to 225°C operating , Electrical Parameters Principle of SOI transistor Gate oxide Analog - BSIM3SOI (b3soipd) transistor ... X-FAB Semiconductor Foundries
Original
datasheet

2 pages,
210.8 Kb

transistor ag metal sheet thickness sensor breakdown gate oxide 45 nm library metal oxide in capacitor "X-Fab" Core cell library IMD2 transistor bsim3 TEXT
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Abstract: Transistor Channel Buried channel PMOS Gate oxide Thermally grown oxide of 73A thickness in , LPCVD oxide + oxide CMP Interconnection Metallization materials Sandwitch structure of Ti/TiN/W-plug/Ti/Al/(Ti, except final metal)/TiN Special scheme Stacked via contact is allowed , (@3.3V) Field Poly pitch with contact Contact pitch Metal 1 pitch Metal 1 pitch with via 1 Via 1 pitch Via 2,3 pitch Metal 2 pitch Metal 2 pitch with via Metal 3 pitch Metal 3 pitch with via ... MagnaChip Semiconductor
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datasheet

2 pages,
108.61 Kb

transistor 548 nmos transistor 0.35 um TEXT
datasheet frame
Abstract: dallas semiconductor reliability report: Process: Metal: Single Poly, Single Metal (Ti/TiN , dallas semiconductor reliability report: Process: Metal: Single Poly, Single Metal (Ti/TiN layers , : 160 Å Tuse: Vuse: 55 °C 5.5 TEOS Oxide - Nitride Volts 1 CONDITION , 7216725 16553234 370 80 0 0 2282212 3454159 dallas semiconductor reliability report: Process: Metal: Single Poly, Single Metal (Ti/TiN layers 0.6 um Al / 0.5% Cu / 0.8% Si Gate ... Original
datasheet

5 pages,
18.46 Kb

ti 9841 DS1208 DS12885 DS2401 DS2405 DS2409 DS2415 9749 9902 9926 9842 TEXT
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Abstract: dielectric USG/BPTEOS Metal layer 1 TiN barrier / RTP contact silicide / W plug / 500 nm hot AlCu / TiN-ARC Intermetal dielectric 1 PE oxide / SOG etchback / PE oxide Metal layer 2 Ti + 500 nm hot AlCu / TiN ARC Intermetal dielectric 2 PE oxide / SOG etchback / PE oxide Metal layer 3 Ti + 800 , with double and triple layer metal option Double-layer poly with double and triple layer metal option , No. of Mask Layers Poly High Resistive Metal 3 Capacitor Poly Module Module Module CX06AA CX06AA ... X-FAB Semiconductor Foundries
Original
datasheet

2 pages,
338.38 Kb

CX06 500-nm CMOS standard cell library 0.6 um cmos process CMOS Process Family TEXT
datasheet frame
Abstract: C3SC C2DM C200SC C200SC C200DM C200DM C200LT C200LT 3.0 fj.m CMOS 1.6 |um CMOS, single metal, single poly, 25 nm gate oxide 1.6 |im CMOS, single metal, double poly (switched capacitor), 25 nm gate oxide 1.2 (jm CMOS, double metal, single poly, 25 nm gate oxide 1.0 (am CMOS, single metal, double poly, 20 nm gate oxide 1.0 (am CMOS, double metal, single poly, 20 nm gate oxide 1.0 nm CMOS, double metal, single poly, 20 nm gate , , double double double double metal, metal, metal, metal, single poly, 15 nm gate oxide single poly, 15 nm ... OCR Scan
datasheet

5 pages,
162.01 Kb

philips RC5 protocol airbag airbag sensor using CAN PROTOCOL Bosch abs bosch abs sensor abs bosch sensor BOSCH IGBT car safety airbags hazel grove BOSCH ABS 8.0 bosch airbag ford single radio cd p82c250 P82C251 bosch steering angle sensor bosch alternator TEXT
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Archived Files

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(N-Channel Metal Oxide Semiconductor) power FETs. The TPIC44H01 TPIC44H01 is ideal for applications where more than industry-standard high-speed CMOS (Complimentary Metal Oxide Semiconductor) logic device, with eight current-limited 100mA DMOS (Double-diffused Metal Oxide Semiconductor) outputs in a single 16-pin surface-mounted Texas Instruments Increase System Reliability >>   Semiconductor Home   >   News and Publications   > news releases    Semiconductor
/datasheets/files/texas-instruments/data/www.ti.com/sc/docs/news/1998/98074.htm
Texas Instruments 18/01/2000 12.44 Kb HTM 98074.htm
(N-Channel Metal Oxide Semiconductor) power FETs. The TPIC44H01 TPIC44H01 is ideal for applications where more than industry-standard high-speed CMOS (Complimentary Metal Oxide Semiconductor) logic device, with eight current-limited 100mA DMOS (Double-diffused Metal Oxide Semiconductor) outputs in a single 16-pin surface-mounted
/datasheets/files/texas-instruments/data/sc/docs/news/1998/98074.htm
Texas Instruments 08/02/1999 7.91 Kb HTM 98074.htm
(N-Channel Metal Oxide Semiconductor) power FETs. The TPIC44H01 TPIC44H01 is ideal for applications where more than industry-standard high-speed CMOS (Complimentary Metal Oxide Semiconductor) logic device, with eight current-limited 100mA DMOS (Double-diffused Metal Oxide Semiconductor) outputs in a single 16-pin surface-mounted Texas Instruments Increase System Reliability >>   Semiconductor Home   >   News and Publications   > news releases    Semiconductor
/datasheets/files/texas-instruments/data/wwwti~1.com/sc/docs/news/1998/98074.htm
Texas Instruments 17/01/2000 12.44 Kb HTM 98074.htm
Carrier packages. CMOS Complimentary Metal Oxide Semiconductor CODEC A COder-DECoder Millions of Instructions per Second MOSFET Metal Oxide Semiconductor Field Effect Transistor Semiconductor Industry Association SIMOX Separation by IMplanted OXide SLICE Wafer SMD the military semiconductor industry. Please feel free to copy and distribute this list without restriction. Common Military Semiconductor Acronyms Acronym Meaning
/datasheets/files/texas-instruments/sc/docs/military/milprdov/acronym1.htm
Texas Instruments 07/11/1996 7.96 Kb HTM acronym1.htm
(Metal Oxide Semiconductor) A process used to design and fabricate both NMOS (a MOS transistor that has charges are carried by conduction. MOSFET Metal Oxide Semiconductor Field Effect Transistor MPEG (Metal Oxide Semiconductor), or mixed technologies. Si silicon The group IV element used for electronic function. DMOS 1) Double Diffused MOS 2) Diffused Metal Oxide Silicon DRAM Dynamic the latest cellular mobile phones. HCMOS High-speed Complementary Metal Oxide Silicon HI REL
/datasheets/files/stmicroelectronics/stonline/press/news/glossary-v2.htm
STMicroelectronics 14/06/1999 34.27 Kb HTM glossary-v2.htm
) components, CMOS (Complementary Metal Oxide Semiconductor) Sensors do not require separate circuits for multi volume manufacturing capacity already in place to support the CMOS semiconductor industry. Intel
/datasheets/files/intel/design/imaging/cmos-v4.htm
Intel 02/02/1999 9.32 Kb HTM cmos-v4.htm
Inside IDT ntegrated Device Technology, Inc. (IDT), founded in 1980, designs, manufactures, and markets high-performance integrated circuits using advanced CMOS (Complementary Metal Oxide Semiconductor) and BiCMOS (Bipolar CMOS) process technologies. IDT currently offers more than 350 devices in 5,000 configurations from four product groups that focus on the desktop and server computing, communications, office
/datasheets/files/idt/idtwebcd/investors/95ar/insideidt(1).html
IDT 27/04/1998 12.13 Kb HTML insideidt(1).html
) components, CMOS (Complementary Metal Oxide Semiconductor) Sensors do not require separate circuits for multi volume manufacturing capacity already in place to support the CMOS semiconductor industry. Intel
/datasheets/files/intel/design/imaging/cmos-v3.htm
Intel 01/08/1998 9.33 Kb HTM cmos-v3.htm
) components, CMOS (Complementary Metal Oxide Semiconductor) Sensors do not require separate circuits for multi volume manufacturing capacity already in place to support the CMOS semiconductor industry. Intel
/datasheets/files/intel/design/imaging/cmos-v5.htm
Intel 01/11/1998 9.33 Kb HTM cmos-v5.htm
These devices, developed with TI's Complementary Metal Oxide Semiconductor (CMOS) technology, offer a
/datasheets/files/texas-instruments/sc/docs/news/1996/96078.htm
Texas Instruments 09/12/1996 6.99 Kb HTM 96078.htm