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Part : MCT-G320240DFSW-282WE Supplier : Truly Industrial Manufacturer : Bristol Electronics Stock : 3 Best Price : $120.00 Price Each : $120.00
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MCTG35P60F1 Datasheet

Part Manufacturer Description PDF Type
MCTG35P60F1 Harris Semiconductor 35A, 600V P-Type MOS Controlled Thyristor (MCT) Original
MCTG35P60F1 Intersil 35A, 600V P-Type MOS Controlled Thyristor (MCT) Original
MCTG35P60F1 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan

MCTG35P60F1

Catalog Datasheet MFG & Type PDF Document Tags

MOS Controlled Thyristor

Abstract: MCT thyristor MCTG35P60F1 S E M I C O N D U C T O R 35A, 600V P-Type MOS Controlled Thyristor (MCT , temperatures up to +150oC with active switching. G A PACKAGING AVAILABILITY PART NUMBER MCTG35P60F1 , 10s) NOTE: MCTG35P60F1 -600 UNITS V +5 V IK25 IK115 IKSM IKC VGA VGAM dv/dt , 2-3 File Number 3602.3 Specifications MCTG35P60F1 Electrical Specifications PARAMETER , MCTG35P60F1 Typical Performance Curves (Continued) TJ = +150oC, RG = 1, L = 200µH tD(OFF)I, TURN-OFF
Harris Semiconductor
Original
MOS Controlled Thyristor MCT thyristor mos Turn-off Thyristor MCTS M35P60F1

MOS Controlled Thyristor

Abstract: MCT thyristor MCTG35P60F1 Semiconductor April 1999 WN S ITHDRA DESIGN ART W P NO NEW EP-Type , . G A PART NUMBER INFORMATION PART NUMBER MCTG35P60F1 PACKAGE TO-247 BRAND K , . . . . . . . . . . . . . . . . . (0.063" (1.6mm) from case for 10s) NOTE: MCTG35P60F1 -600 , Specifications MCTG35P60F1 Electrical Specifications PARAMETER Peak Off-State Blocking Current Peak , ) FIGURE 2. MAXIMUM CONTINUOUS CATHODE CURRENT 2-3 MCTG35P60F1 Typical Performance Curves
Harris Semiconductor
Original
100DV MCTG35P6

MOS Controlled Thyristor

Abstract: mct 575 P-Type NOT R T3A65P100F C M e e S MCTG35P60F1 35A, 600V MOS Controlled Thyristor (MCT) Package , PART NUMBER MCTG35P60F1 PACKAGE TO-247 BRAND M35P60F1 K Symbol G A NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified MCTG35P60F1 , 3602.4 2-2 Specifications MCTG35P60F1 Electrical Specifications PARAMETER Peak Off-State , 2-3 MCTG35P60F1 Typical Performance Curves (Continued) TJ = +150oC, RG = 1, L = 200µH 200 175 150
Harris Semiconductor
Original
mct 575 Thyristors application circuits P100F MCT3D65
Abstract: temperatures up to +150°C with active switching. PART NUMBER INFORMATION PART NUMBER MCTG35P60F1 PACKAGE , Ratings Tc = +25 °c, Unless Otherwise Specified MCTG35P60F1 Peak O ff-State Voltage (See Figure 1 1 , Number 3602.5 Specifications MCTG35P60F1 Electrical Specifications PARAMETER t c = +25°c , CURRENT 2-3 MCTG35P60F1 Typical Performance Curves (Continued) T j = +1 5 0°C , RG = 1 £2, L = , CURRENT (TYPICAL) FIGURE8. TURN-OFFENERGYLOSSvsCATHODECURRENT (TYPICAL) 2-4 MCTG35P60F1 -
OCR Scan
CTG35P60F1

MCT thyristor 100v

Abstract: THYRISTOR 35A 300V &m A p rii 1995 a r ia s MCTG35P60F1 35A, 600V P-Type MOS Controlled Thyristor (MCT , . PA C K A G IN G A V A ILA B IL ITY PART NU M BER PACKAG E BRAND Symbol MCTG35P60F1 TO , Corporation 1995 File N um ber 3602.3 Specifications MCTG35P60F1 E le c tric a l S p e c ific a tio , O D E C U R R EN T 2-4 MCTG35P60F1 Typical Performance Curves 200 (C ontinued) T j = , ) 2-5 MCTG35P60F1 Typical Performance Curves (C ontinued) T c = +115°C, L = 200nH 10 20 30
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OCR Scan
MCT thyristor 100v THYRISTOR 35A 300V 3SP60F1