MCR08BT1/D MCR08BT1 318E-04 MCR08DT1 MCR08MT1 - Datasheet Archive

 

Order this document by MCR08BT1/D SEMICONDUCTOR TECHNICAL DATA MCR08BT1 Series* SOT223 SCR Silicon Controlled Rectifiers Reverse

 

MOTOROLA Order this document by MCR08BT1/D MCR08BT1/D SEMICONDUCTOR TECHNICAL DATA MCR08BT1 MCR08BT1 Series* SOT223 SCR Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors *Motorola preferred devices PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in surface mount package for use in automated manufacturing. · · · · · SCR 0.8 AMPERE RMS 200 thru 600 Volts Sensitive Gate Trigger Current Blocking Voltage to 600 Volts Glass Passivated Surface for Reliability and Uniformity Surface Mount Package Devices Supplied on 1 K Reel CASE 318E-04 318E-04 (SOT-223) STYLE 10 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Forward and Reverse Blocking Voltage(1) (1/2 Sine Wave, RGK = 1000 , TJ = 25 to 110°C) Value VDRM, VRRM Volts 200 400 600 MCR08BT1 MCR08BT1 MCR08DT1 MCR08DT1 MCR08MT1 MCR08MT1 On-State Current RMS (TC = 80°C) Unit IT(RMS) 0.8 Amps ITSM 10 Amps I2t 0.4 A2s PGM 0.1 Watts PG(AV) 0.01 Watts TJ ­40 to +110 °C Tstg ­40 to +150 °C TL 260 °C Symbol Max Unit Thermal Resistance, Junction to Ambient PCB Mounted per Figure 1 RJA 156 °C/W Thermal Resistance, Junction to Tab Measured on Anode Tab Adjacent to Epoxy RJT 25 °C/W Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = 25°C) Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power, Forward, TA = 25°C Average Gate Power (TC = 80°C, t = 8.3 ms) Operating Junction Temperature Range Storage Temperature Range Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum) THERMAL CHARACTERISTICS Characteristic 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant source such that the voltage ratings of the devices are exceeded. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola Thyristor Device Data © Motorola, Inc. 1995 1 MCR08BT1 MCR08BT1 Series ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted, RGK = 1 K) Characteristic Symbol Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, RGK = 1000 ) Min Typ Max Unit - - - - 10 200 µA µA IDRM, IRRM TJ = 25°C TJ = 110°C Maximum On-State Voltage (Either Direction)* (IT = 1.0 A Peak, TA = 25°C) VTM - - 1.7 Volts Gate Trigger Current (Continuous dc) (Anode Voltage = 7.0 Vdc, RL = 100 ) IGT - - 200 µA IH - - 5.0 mA Gate Trigger Voltage (Continuous dc) (Anode Voltage = 7.0 Vdc, RL = 100 ) VGT - - 0.8 Volts Critical Rate-of-Rise of Off State Voltage (Vpk = Rated VDRM, TC = 110°C, RGK = 1000 , Exponential Method) dv/dt 10 - - V/µs Holding Current (VD = 7.0 Vdc, Initializing Current = 20 mA, RGK = 1000 ) * Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. 0.15 3.8 0.079 2.0 0.091 2.3 0.091 2.3 0.244 6.2 0.079 2.0 0.059 1.5 0.984 25.0 0.059 1.5 0.059 1.5 0.096 2.44 0.096 2.44 0.059 1.5 inches mm BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR. BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL. MATERIAL: G10 FIBERGLASS BASE EPOXY 0.096 2.44 0.059 1.5 0.472 12.0 Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223 2 Motorola Thyristor Device Data 10 1.0 0.1 TYPICAL AT TJ = 110°C MAX AT TJ = 110°C MAX AT TJ = 25°C 0.01 1.0 0 2.0 R JA , JUNCTION TO AMBIENT THERMAL RESISTANCE, ( °C/W) IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) MCR08BT1 MCR08BT1 Series 4.0 3.0 160 150 140 130 120 110 100 90 80 70 60 50 40 30 L TYPICAL MAXIMUM DEVICE MOUNTED ON FIGURE 1 AREA = L2 PCB WITH TAB AREA AS SHOWN L 4 1 2 3 MINIMUM FOOTPRINT = 0.076 cm2 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 2. On-State Characteristics Figure 3. Junction to Ambient Thermal Resistance versus Copper Tab Area 110 100 50 OR 60 Hz HALFWAVE 90 T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( °C) T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( °C) 110 100 = CONDUCTION ANGLE 80 dc 70 180° 60 120° 50 = 30° 40 60° 90° 0 0.1 0.2 0.4 0.3 dc 180° 80 120° 70 = 30° 60 60° 50 40 20 0.5 1.0 cm2 FOIL, 50 OR 60 Hz HALFWAVE 90 90° 30 = 30 20 CONDUCTION ANGLE 0 0.1 0.2 0.3 0.4 0.5 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Figure 4. Current Derating, Minimum Pad Size Reference: Ambient Temperature Figure 5. Current Derating, 1.0 cm Square Pad Reference: Ambient Temperature dc 100 110 PAD AREA = 4.0 cm2, 50 OR 60 Hz HALFWAVE 180° 90 120° = 30° 60° 70 90° 60 180° 60° 0.1 90° = CONDUCTION ANGLE ANGLE 0 120° = 30° = CONDUCTION 50 50 OR 60 Hz HALFWAVE dc T(tab) , MAXIMUM ALLOWABLE TAB TEMPERATURE ( ° C) T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( °C) 110 80 10 FOIL AREA (cm2) 0.2 0.3 0.4 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Figure 6. Current Derating, 2.0 cm Square Pad Reference: Ambient Temperature Motorola Thyristor Device Data 0.5 85 0 0.1 0.2 0.3 0.4 0.5 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Figure 7. Current Derating Reference: Anode Tab 3 MCR08BT1 MCR08BT1 Series 1.0 MAXIMUM AVERAGE POWER P(AV),DISSIPATION (WATTS) 0.9 0.8 = 0.7 r T , TRANSIENT THERMAL RESISTANCE NORMALIZED 1.0 = 30° CONDUCTION ANGLE 60° 0.6 90° 0.5 0.4 dc 0.3 180° 0.2 120° 0.1 0 0 0.1 0.2 0.4 0.3 0.1 0.01 0.0001 0.5 0.001 0.5 0.4 ­20 0 20 40 60 80 I H , HOLDING CURRENT (NORMALIZED) VGT , GATE TRIGGER VOLTAGE (VOLTS) VAK = 7.0 V RL = 140 RGK = 1.0 k 0.6 VAK = 7.0 V RL = 3.0 k RGK = 1.0 k 1.0 0 ­40 110 ­20 0 20 40 60 80 110 TJ, JUNCTION TEMPERATURE, (°C) Figure 11. Typical Normalized Holding Current versus Junction Temperature Figure 10. Typical Gate Trigger Voltage versus Junction Temperature 1000 I GT , GATE TRIGGER CURRENT ( µA) 0.7 V GT , GATE TRIGGER VOLTAGE (VOLTS) 100 2.0 0.7 TJ, JUNCTION TEMPERATURE, (°C) 0.65 0.6 RGK = 1000 , RESISTOR CURRENT INCLUDED 100 0.55 0.5 VAK = 7.0 V RL = 140 TJ = 25°C 0.45 0.4 0.35 1.0 10 100 IGT, GATE TRIGGER CURRENT (µA) Figure 12. Typical Range of VGT versus Measured IGT 4 10 Figure 9. Thermal Response Device Mounted on Figure 1 Printed Circuit Board Figure 8. Power Dissipation 0.3 0.1 1.0 t, TIME (SECONDS) IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 0.3 ­40 0.1 0.01 1000 VAK = 7.0 V RL = 140 WITHOUT GATE RESISTOR 10 1.0 ­40 ­20 0 20 40 60 80 110 TJ, JUNCTION TEMPERATURE (°C) Figure 13. Typical Gate Trigger Current versus Junction Temperature Motorola Thyristor Device Data MCR08BT1 MCR08BT1 Series 10000 100 IGT = 48 µA 10 Vpk = 400 V 1000 STATIC dv/dt (V/ µS) IH , HOLDING CURRENT (mA) 5000 TJ = 25°C IGT = 7 µA 1.0 500 100 TJ = 25° 50 10 125° 5.0 50° 110° 1.0 75° 0.5 0.1 1.0 10 100 1000 10,000 100,000 0.1 10 100 1000 10,000 100,000 RGK, GATE-CATHODE RESISTANCE (OHMS) RGK, GATE-CATHODE RESISTANCE (OHMS) Figure 14. Holding Current Range versus Gate-Cathode Resistance Figure 15. Exponential Static dv/dt versus Junction Temperature and Gate-Cathode Termination Resistance 10000 1000 TJ = 110°C 1000 200 V 500 100 V TJ = 110°C 400 V (PEAK) 500 400 V 100 STATIC dv/dt (V/ µS) STATIC dv/dt (V/ µS) 10000 300 V 50 V 50 500 V 10 5.0 100 RGK = 100 50 10 RGK = 1.0 k 5.0 1.0 10 100 1000 10,000 RGK = 10 k 1.0 0.01 0.1 1.0 10 RGK, GATE-CATHODE RESISTANCE (OHMS) Figure 16. Exponential Static dv/dt versus Peak Voltage and Gate-Cathode Termination Resistance 100 CGK, GATE-CATHODE CAPACITANCE (nF) Figure 17. Exponential Static dv/dt versus Gate-Cathode Capacitance and Resistance 10000 1000 STATIC dv/dt (V/ µS) 500 100 50 IGT = 70 µA 10 IGT = 5 µA IGT = 35 µA 5.0 1.0 10 100 IGT = 15 µA 1000 10,000 100,000 GATE-CATHODE RESISTANCE (OHMS) Figure 18. Exponential Static dv/dt versus Gate-Cathode Termination Resistance and Product Trigger Current Sensitivity Motorola Thyristor Device Data 5 MCR08BT1 MCR08BT1 Series PACKAGE DIMENSIONS A F STYLE 10: PIN 1. 2. 3. 4. 4 S B 1 2 3 NOTES: 2 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 3 CONTROLLING DIMENSION: INCH. CATHODE ANODE GATE ANODE D L G J C 0.08 (0003) M H INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287 MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30 K CASE 318E-04 318E-04 (SOT­223) Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 6 Motorola Thyristor Device Data *MCR08BT1/D MCR08BT1/D* MCR08BT1/D MCR08BT1/D