MCP1401/02 MCP1401 MCP1402 5L-SOT-23 1E-10 MCP1401T-E/OT MCP1402T-E/OT - Datasheet Archive

 

Tiny 500 mA, High-Speed Power MOSFET Driver Features General Description · High Peak Output Current: 500 mA (typical)

 

MCP1401/02 MCP1401/02 Tiny 500 mA, High-Speed Power MOSFET Driver Features General Description · High Peak Output Current: 500 mA (typical) · Wide Input Supply Voltage Operating Range: - 4.5V to 18V · Low Shoot-Through/Cross-Conduction Current in Output Stage · High Capacitive Load Drive Capability: - 470 pF in 19 ns (typical) - 1000 pF in 34 ns (typical) · Short Delay Times: 35 ns (typical) · Matched Rise/Fall Times · Low Supply Current: - With Logic `1' Input ­ 0.85 mA (typical) - With Logic `0' Input ­ 0.1 mA (typical) · Latch-Up Protected: Will Withstand 500 mA Reverse Current · Logic Input Will Withstand Negative Swing Up To 5V · Space-saving 5-Lead SOT-23 Package The MCP1401/02 MCP1401/02 are high speed MOSFET drivers capable of providing 500 mA of peak current. The inverting or non-inverting single channel output is directly controlled from either TTL or CMOS (3V to 18V). These devices also feature low shoot-through current, matched rise/fall times and propagation delays which make them ideal for high switching frequency applications. Applications · · · · Switch Mode Power Supplies Pulse Transformer Drive Line Drivers Motor and Solenoid Drive The MCP1401/02 MCP1401/02 devices operate from a 4.5V to 18V single power supply and can easily charge and discharge 470 pF gate capacitance in under 19 ns (typical). They provide low enough impedances in both the on and off states to ensure the MOSFETs intended state will not be affected, even by large transients. These devices are highly latch-up resistant under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking (of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of reverse current being forced back into their outputs. All terminals are fully protect against Electrostatic Discharge (ESD) up to 3 kV (HBM) and 400V (MM). Package Types SOT-23-5 MCP1401 MCP1401 MCP1402 MCP1402 GND 1 5 OUT OUT 4 GND GND VDD 2 IN 3 © 2007 Microchip Technology Inc. DS22052B-page 1 MCP1401/02 MCP1401/02 Functional Block Diagram Inverting VDD 850 µA 300 mV Output Non-inverting Input Effective Input C = 25 pF (Each Input) 4.7V MCP1401 MCP1401 Inverting MCP1402 MCP1402 Non-inverting GND DS22052B-page 2 © 2007 Microchip Technology Inc. MCP1401/02 MCP1401/02 1.0 ELECTRICAL CHARACTERISTICS Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings Supply Voltage .+20V Input Voltage . (VDD + 0.3V) to (GND ­ 5V) Input Current (VIN>VDD).50 mA Package Power Dissipation (TA = 50oC) SOT-23-5.0.39W DC CHARACTERISTICS (NOTE 2) Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5V VDD 18V. Parameters Sym Min Typ Max Units Logic `1', High Input Voltage VIH 2.4 1.5 - V Logic `0', Low Input Voltage VIL - 1.3 0.8 V Input Current IIN ­1 - 1 µA Input Voltage VIN -5 - VDD+0.3 Conditions V Input 0V VIN VDD Output High Output Voltage VOH VDD ­ 0.025 - - V DC Test Low Output Voltage VOL - - 0.025 V DC Test Output Resistance, High ROH - 12 18 IOUT = 10 mA, VDD = 18V Output Resistance, Low ROL - 10 16 IOUT = 10 mA, VDD = 18V Peak Output Current IPK - 0.5 - A VDD = 18V (Note 2) Latch-Up Protection Withstand Reverse Current IREV - >0.5 - A Duty cycle 2%, t 300 µs Rise Time tR - 19 25 ns Figure 4-1, Figure 4-2 CL = 470 pF Fall Time tF - 15 20 ns Figure 4-1, Figure 4-2 CL = 470 pF Delay Time tD1 - 35 40 ns Figure 4-1, Figure 4-2 Delay Time tD2 - 35 40 ns Figure 4-1, Figure 4-2 VDD 4.5 - 18.0 V IS - 0.85 1.1 mA VIN = 3V IS - 0.10 0.20 mA VIN = 0V Switching Time (Note 1) Power Supply Supply Voltage Power Supply Current Note 1: 2: Switching times ensured by design. Tested during characterization, not production tested. © 2007 Microchip Technology Inc. DS22052B-page 3 MCP1401/02 MCP1401/02 DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V VDD 18V. Parameters Sym Min Typ Max Units Logic `1', High Input Voltage VIH 2.4 Logic `0', Low Input Voltage VIL - Input Current IIN ­10 Input Voltage VIN -5 VOH VDD ­ 0.025 Conditions - - V - 0.8 V - +10 µA - VDD+0.3 V - - V DC TEST Input 0V VIN VDD Output High Output Voltage Low Output Voltage VOL - - 0.025 V DC TEST Output Resistance, High ROH - 12 18 IOUT = 10 mA, VDD = 18V Output Resistance, Low ROL - 10 16 IOUT = 10 mA, VDD = 18V Rise Time tR - 20 30 ns Figure 4-1, Figure 4-2 CL = 470 pF Fall Time tF - 18 28 ns Figure 4-1, Figure 4-2 CL = 470 pF Delay Time tD1 - 40 51 ns Figure 4-1, Figure 4-2 Delay Time tD2 - 40 51 ns Figure 4-1, Figure 4-2 VDD 4.5 - 18.0 V IS - - 0.90 0.11 1.10 0.20 mA mA Switching Time (Note 1) Power Supply Supply Voltage Power Supply Current VIN = 3V VIN = 0V Note 1: Switching times ensured by design. 2: Tested during characterization, not production tested. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V VDD 18V. Parameters Sym Min Specified Temperature Range TA ­40 Maximum Junction Temperature TJ - Storage Temperature Range TA ­65 JA - Typ Max Units - +125 °C - +150 °C - +150 °C 256 - Conditions °C/W Temperature Ranges Package Thermal Resistances Thermal Resistance, 5L-SOT-23 5L-SOT-23 DS22052B-page 4 © 2007 Microchip Technology Inc. MCP1401/02 MCP1401/02 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V. 350 350 3300 pF 250 200 150 1000 pF 100 3300 pF 300 Fall Time (ns) Rise TIme (ns) 300 470 pF 100 pF 50 250 200 150 100 pF 470 pF 100 1000 pF 50 0 0 4 6 8 10 12 14 16 18 4 6 8 Supply Voltage (V) FIGURE 2-1: Voltage. 10 12 14 Rise Time vs. Supply FIGURE 2-4: Voltage. Fall Time vs. Supply 250 12V 12V 200 Fall Time (ns) Rise Time (ns) 200 150 18V 100 50 150 1000 18V 100 50 5V 0 100 5V 0 100 10000 1000 Capacitive Load (pF) Time (ns) 10000 Capacitve Load (pF) Rise Time vs. Capacitive FIGURE 2-5: Load. Fall Time vs. Capacitive 44 CLOAD = 470 pF VDD = 12V tRISE 26 tFALL 22 18 14 10 Propagation Delay (ns) FIGURE 2-2: Load. 30 18 Supply Voltage (V) 250 34 16 VDD= 12V 43 tD1 42 41 40 39 tD2 38 37 36 -40 -25 -10 5 20 35 50 65 80 95 110 125 4 Temperature (oC) FIGURE 2-3: Temperature. Rise and Fall Times vs. © 2007 Microchip Technology Inc. 5 6 7 8 9 10 Input Amplitude (V) FIGURE 2-6: Amplitude. Propagation Delay vs. Input DS22052B-page 5 MCP1401/02 MCP1401/02 Typical Performance Curves (Continued) Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V. 1.2 Quiescent Current (mA) Propagation Delay (ns) 80 70 tD1 60 50 tD2 40 VDD = 18V 1.0 Input = 1 0.8 0.6 0.4 0.2 Input = 0 0.0 30 4 6 8 10 12 14 16 -40 -25 -10 18 5 Temperature (oC) Supply Voltage (V) FIGURE 2-7: Supply Voltage. Propagation Delay Time vs. FIGURE 2-10: Temperature. VDD = 12V 55 Input Threshold (V) Propagation Delay (ns) Quiescent Current vs. 2.2 60 tD1 50 45 tD2 40 35 30 2.1 VHI 2 1.9 1.8 1.7 VLO 1.6 1.5 -40 -25 -10 5 20 35 50 65 80 95 110 125 4 6 8 Temperature (oC) FIGURE 2-8: Temperature. 10 12 Propagation Delay Time vs. FIGURE 2-11: Voltage. 16 18 Input Threshold vs. Supply 2.4 VDD = 12V 2.3 Input Threshold (V) 1.0 Input = 1 0.8 0.6 0.4 Input = 0 0.2 14 Supply Voltage (V) 1.2 Quiescent Current (mA) 20 35 50 65 80 95 110 125 2.2 2.1 VHI 2 1.9 1.8 VLO 1.7 1.6 0.0 4 6 8 10 12 14 16 18 -40 -25 -10 Supply Voltage (V) FIGURE 2-9: Supply Voltage. DS22052B-page 6 Quiescent Current vs. 5 20 35 50 65 80 95 110 125 Temperature (oC) FIGURE 2-12: Temperature. Input Threshold vs. © 2007 Microchip Technology Inc. MCP1401/02 MCP1401/02 Typical Performance Curves (Continued) Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V. VDD = 18V 80 2 MHz 125 100 100 kHz 1 MHz 75 200 kHz 50 50 kHz 25 0 100 Supply Current (mA) Supply Current (mA) 150 70 VDD = 18V 6,800 pF 60 3,300 pF 50 100 pF 40 30 10 0 1000 10000 10 100 Capacitive Load (pF) FIGURE 2-13: Capacitive Load. 60 Supply Current vs. FIGURE 2-16: Frequency. 50 VDD = 12V 2 MHz 1 MHz 50 50 kHz 40 100 kHz 30 200 kHz 20 10 0 100 VDD = 12V 470 pF 30 100 pF 20 1,000 pF 10 10 10000 Supply Current vs. FIGURE 2-17: Frequency. 25 VDD = 6V 2 MHz 25 100 kHz 1 MHz 20 50 kHz 200 kHz 10 5 0 100 1000 Supply Current vs. VDD = 6V 6,800 pF 20 3,300 pF 15 470 pF 100 pF 10 1,000 pF 5 0 1000 10000 10 Capacitive Load (pF) FIGURE 2-15: Capacitive Load. 100 Frequency (kHz) Supply Current (mA) Supply Current (mA) 6,800 pF 3,300 pF 0 1000 FIGURE 2-14: Capacitive Load. 15 Supply Current vs. 40 Capacitive Load (pF) 30 1000 Frequency (kHz) Supply Voltage (V) Supply Current (mA) 70 1,000 pF 470 pF 20 Supply Current vs. © 2007 Microchip Technology Inc. 100 1000 Frequency (kHz) FIGURE 2-18: Frequency. Supply Current vs. DS22052B-page 7 MCP1401/02 MCP1401/02 Typical Performance Curves (Continued) Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V. 1E-7 60 R OUT-HI (m) 50 Crossover Energy (A*sec) VIN = 0V (MCP1401 MCP1401) VIN = 5V (MCP1402 MCP1402) TJ = +125oC 40 30 20 TJ = +25oC 10 0 4 6 8 10 12 14 16 18 1E-8 1E-9 1E-10 1E-10 4 6 Supply Voltage (V) 12 14 16 18 FIGURE 2-21: Supply Voltage. Crossover Energy vs. VIN = 5V (MCP1401 MCP1401) VIN = 0V (MCP1402 MCP1402) 45 40 ROUT-LO (m) 10 Supply Voltage (V) FIGURE 2-19: Output Resistance (Output High) vs. Supply Voltage. 50 8 TJ = +125oC 35 30 25 20 TJ = +25oC 15 10 5 4 6 8 10 12 14 16 18 Supply Voltage (V) FIGURE 2-20: Output Resistance (Output Low) vs. Supply Voltage. DS22052B-page 8 © 2007 Microchip Technology Inc. MCP1401/02 MCP1401/02 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE (1) SOT-23-5 Symbol 1 GND 2 VDD Supply Input 3 IN Control Input 4 GND Ground 5 OUT Output Note 1: 3.1 Description Ground Duplicate pins must be connected for proper operation. Supply Input (VDD) 3.3 Ground (GND) VDD is the bias supply input for the MOSFET driver and has a voltage range of 4.5V to 18V. This input must be decoupled to ground with a local capacitor. This bypass capacitor provides a localized low-impedance path for the peak currents that are to be provided to the load. Ground is the device return pin. The ground pin should have a low impedance connection to the bias supply source return. High peak currents will flow out the ground pin when the capacitive load is being discharged. 3.2 3.4 Control Input (IN) The MOSFET driver input is a high-impedance, TTL/ CMOS-compatible input. The input also has hysteresis between the high and low input levels, allowing them to be driven from slow rising and falling signals, and to provide noise immunity. © 2007 Microchip Technology Inc. Output (OUT) The output is a CMOS push-pull output that is capable of sourcing and sinking 0.5A of peak current (VDD = 18V). The low output impedance ensures the gate of the external MOSFET will stay in the intended state even during large transients. This output also has a reverse current latch-up rating of 0.5A. DS22052B-page 9 MCP1401/02 MCP1401/02 4.0 APPLICATION INFORMATION 4.1 General Information VDD = 18V 1 µF MOSFET drivers are high-speed, high current devices which are intended to source/sink high peak currents to charge/discharge the gate capacitance of external MOSFETs or IGBTs. In high frequency switching power supplies, the PWM controller may not have the drive capability to directly drive the power MOSFET. A MOSFET driver like the MCP1401/02 MCP1401/02 family can be used to provide additional source/sink current capability. 4.2 Input 0.1 µF Ceramic Output CL = 470 pF MCP1402 MCP1402 MOSFET Driver Timing The ability of a MOSFET driver to transition from a fully off state to a fully on state are characterized by the drivers rise time (tR), fall time (tF), and propagation delays (tD1 and tD2). The MCP1401/02 MCP1401/02 family of drivers can typically charge and discharge a 470 pF load capacitance in 19 ns along with a typical matched propagation delay of 35 ns. Figure 4-1 and Figure 4-2 show the test circuit and timing waveform used to verify the MCP1401/02 MCP1401/02 timing. Input 0.1 µF Ceramic 90% Input 18V tD1 tF tD2 tR 90% 90% Output 0V FIGURE 4-1: Waveform. 10% 0V 18V 10% tD190% Output tR tD2 10% 0V 90% tF 10% Non-Inverting Driver Timing Decoupling Capacitors Careful layout and decoupling capacitors are highly recommended when using MOSFET drivers. Large currents are required to charge and discharge capacitive loads quickly. For example, approximately 550 mA are needed to charge a 470 pF load with 18V in 15 ns. To operate the MOSFET driver over a wide frequency range with low supply impedance, a ceramic and low ESR film capacitor is recommended to be placed in parallel between the driver VDD and GND. A 1.0 µF low ESR film capacitor and a 0.1 µF ceramic capacitor placed between pins 2 and 1 should be used. These capacitors should be placed close to the driver to minimized circuit board parasitics and provide a local source for the required current. MCP1401 MCP1401 0V 10% Input 4.3 Output CL = 470 pF +5V 90% FIGURE 4-2: Waveform. VDD = 18V 1 µF +5V 10% Inverting Driver Timing 4.4 PCB Layout Considerations Proper PCB layout is important in a high current, fast switching circuit to provide proper device operation and robustness of design. PCB trace loop area and inductance should be minimized by the use of ground planes or trace under MOSFET gate drive signals, separate analog and power grounds, and local driver decoupling. Placing a ground plane beneath the MCP1401/02 MCP1401/02 will help as a radiated noise shield as well as providing some heat sinking for power dissipated within the device. DS22052B-page 10 © 2007 Microchip Technology Inc. MCP1401/02 MCP1401/02 4.5 Power Dissipation 4.5.2 The total internal power dissipation in a MOSFET driver is the summation of three separate power dissipation elements. EQUATION 4-1: P T = P L + P Q + P CC Where: PT = Total power dissipation PL = Load power dissipation PQ = = The power dissipation associated with the quiescent current draw depends upon the state of the input pin. The MCP1401/02 MCP1401/02 devices have a quiescent current draw when the input is high of 0.85 mA (typical) and 0.1 mA (typical) when the input is low. The quiescent power dissipation is shown in Equation 4-3. EQUATION 4-3: P Q = ( I QH × D + I QL × ( 1 ­ D ) ) × V DD Quiescent power dissipation PCC QUIESCENT POWER DISSIPATION Operating power dissipation Where: IQH = Quiescent current in the high state D 4.5.1 = Duty cycle IQL = Quiescent current in the low state VDD = MOSFET driver supply voltage CAPACITIVE LOAD DISSIPATION The power dissipation caused by a capacitive load is a direct function of frequency, total capacitive load, and supply voltage. The power lost in the MOSFET driver for a complete charging and discharging cycle of a MOSFET is shown in Equation 4-2. EQUATION 4-2: P L = f × C T × V DD 2 4.5.3 OPERATING POWER DISSIPATION The operating power dissipation occurs each time the MOSFET driver output transitions because for a very short period of time both MOSFETs in the output stage are on simultaneously. This cross-conduction current leads to a power dissipation described in Equation 4-4. Where: f = Switching frequency CT = Total load capacitance VDD = MOSFET driver supply voltage EQUATION 4-4: P CC = CC × f × V DD Where: CC = Cross-conduction constant (A*sec) f © 2007 Microchip Technology Inc. = Switching frequency VDD = MOSFET driver supply voltage DS22052B-page 11 MCP1401/02 MCP1401/02 5.0 PACKAGING INFORMATION 5.1 Package Marking Information (Not to Scale) Example: 5-Lead SOT-23 Standard Markings for SOT-23 Part Number XXNN MCP1401T-E/OT MCP1401T-E/OT MCP1402T-E/OT MCP1402T-E/OT Code GYNN GYNN GZNN 1 1 Legend: XX.X Y YY WW NNN e3 * Note: DS22052B-page 12 Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week `01') Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3) can be found on the outer packaging for this package. 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