MC74VHC1G126 353/SC 23/SC MC74VHC1G126/D EIA/JESD22 JESD22 EIA/JESD78 - Datasheet Archive

 

Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3­state buffer fabricated with

 

MC74VHC1G126 MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 MC74VHC1G126 is an advanced high speed CMOS noninverting 3­state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffered 3­state output which provides high noise immunity and stable output. The MC74VHC1G126 MC74VHC1G126 input structure provides protection when voltages up to 7.0 V are applied, regardless of the supply voltage. This allows the MC74VHC1G126 MC74VHC1G126 to be used to interface 5.0 V circuits to 3.0 V circuits. · · · · · · http://onsemi.com MARKING DIAGRAMS SC­88A / SOT­353/SC 353/SC­70 DF SUFFIX CASE 419A High Speed: tPD = 3.5 ns (Typ) at VCC = 5.0 V Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C W2d Pin 1 d = Date Code Power Down Protection Provided on Inputs Balanced Propagation Delays TSOP­5/SOT­23/SC 23/SC­59 DT SUFFIX CASE 483 Pin and Function Compatible with Other Standard Logic Families Chip Complexity: FETs = 58; Equivalent Gates = 15 W2d Pin 1 d = Date Code OE IN A 5 1 VCC 2 PIN ASSIGNMENT 1 GND 4 3 OUT Y OE 2 IN A 3 GND 4 OUT Y 5 VCC Figure 1. Pinout (Top View) FUNCTION TABLE A Input OE EN IN A Y Output L H X OUT Y OE Input H H L L H Z Figure 2. Logic Symbol ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2002 June, 2002 ­ Rev. 9 1 Publication Order Number: MC74VHC1G126/D MC74VHC1G126/D MC74VHC1G126 MC74VHC1G126 MAXIMUM RATINGS (Note 1) Symbol Characteristics VCC VIN IIK Output Diode Current IOUT V ­0.5 to 7.0 ­0.5 to VCC + 0.5 V Input Diode Current IOK V 0 to +7.0 DC Output Voltage Unit DC Input Voltage VOUT Value ­0.5 to +7.0 DC Supply Voltage VCC = 0 High or Low State ­20 mA +20 mA DC Output Current, per Pin +25 mA ICC DC Supply Current, VCC and GND +50 mA PD Power dissipation in still air SC­88A, TSOP­5 200 mW qJA Thermal resistance SC­88A, TSOP­5 333 °C/W TL Lead temperature, 1 mm from case for 10 s 260 °C TJ Junction temperature under bias +150 °C Tstg Storage temperature ­65 to +150 °C VESD ESD Withstand Voltage Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) > 2000 > 200 N/A V ILatch­Up Latch­Up Performance Above VCC and Below GND at 125°C (Note 5) ±500 mA VOUT < GND; VOUT > VCC 1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute­maximum­rated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions. 2. Tested to EIA/JESD22 EIA/JESD22­A114­A 3. Tested to EIA/JESD22 EIA/JESD22­A115­A 4. Tested to JESD22 JESD22­C101­A 5. Tested to EIA/JESD78 EIA/JESD78 RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit VCC DC Supply Voltage 2.0 5.5 V VIN DC Input Voltage 0.0 5.5 V VOUT DC Output Voltage 0.0 VCC V TA Operating Temperature Range ­55 +125 °C tr , tf Input Rise and Fall Time 0 0 100 20 ns/V VCC = 3.3 V ± 0.3 V VCC = 5.0 V ± 0.5 V 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 TJ = 80 ° C 117.8 TJ = 90 ° C 1,032,200 TJ = 100 ° C 80 FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 110° C Time, Years TJ = 120° C Time, Hours TJ = 130 ° C Junction Temperature °C NORMALIZED FAILURE RATE DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES 1.0 1 1 10 100 TIME, YEARS Figure 3. Failure Rate vs. Time Junction Temperature http://onsemi.com 2 1000 MC74VHC1G126 MC74VHC1G126 DC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions TA 85°C TA = 25°C VCC (V) Min 1.5 2.1 3.15 3.85 VIH Minimum High­Level Input Voltage 2.0 3.0 4.5 5.5 VIL Maximum Low­Level Input Voltage Minimum High­Level Output Voltage VIN = VIH or VIL Max 2.0 3.0 4.5 5.5 VOH Typ VIN = VIH or VIL IOH = ­50 mA VOL Maximum Low­Level Output Voltage VIN = VIH or VIL 1.9 2.9 4.4 3.0 4.5 Max Min 1.5 2.1 3.15 3.85 0.5 0.9 1.35 1.65 2.0 3.0 4.5 VIN = VIH or VIL IOH = ­4 mA IOH = ­8 mA Min ­55 TA 125°C 2.0 3.0 4.5 2.58 3.94 Max 1.5 2.1 3.15 3.85 0.5 0.9 1.35 1.65 V 0.5 0.9 1.35 1.65 1.9 2.9 4.4 1.9 2.9 4.4 2.48 3.80 Unit V V 2.34 3.66 V VIN = VIH or VIL IOL = 50 mA 2.0 3.0 4.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 3.0 4.5 VIN = VIH or VIL IOL = 4 mA IOL = 8 mA 0.0 0.0 0.0 0.36 0.36 0.44 0.44 V 0.52 0.52 V IOZ Maximum 3­State Leakage Current VIN = VIH or VIL VOUT = VCC or GND 5.5 ±0.25 ±2.5 ±2.5 mA IIN Maximum Input Leakage Current VIN = 5.5 V or GND 0 to 5.5 ±0.1 ±1.0 ±1.0 mA ICC Maximum Quiescent Supply Current VIN = VCC or GND 5.5 1.0 20 40 mA ÎÎ Î Î Î Î Î ÎÎ Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î ÎÎ Î Î Î Î Î ÎÎ Î Î Î Î Î ÎÎ Î Î Î Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î ÎÎ Î Î Î Î Î Î ÎÎ Î Î Î Î Î ÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î ÎÎ Î Î Î Î Î ÎÎ Î Î Î Î Î ÎÎ Î Î Î Î Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î ÎÎ Î Î Î Î Î Î ÎÎ Î Î Î Î Î ÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎ Î Î Î Î Î Î Î Î ÎÎ Î Î Î Î Î ÎÎ Î Î ÎÎ Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î ÎÎ ÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎ Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS Cload = 50 pF, Input tr = tf = 3.0 ns TA 85°C TA = 25°C Symbol tPLH, tPHL tPZL, tPZH tPLZ, tPHZ Typ Max Max Unit Maximum Propagation Delay, y Input A t Y I t to (Figures 3. and 5.) VCC = 3.3 ± 0.3 V CL = 15 pF CL = 50 pF 4.5 6.4 8.0 11.5 9.5 13.0 12.0 16.0 ns VCC = 5.0 ± 0.5 V CL = 15 pF CL = 50 pF 3.5 4.5 5.5 7.5 6.5 8.5 8.5 10.5 Maximum Output Enable Time, Input OE to Y I t t (Figures 4. and 5.) VCC = 3.3 ± 0.3 V CL = 15 pF RL = RI = 500 W CL = 50 pF 4.5 6.4 8.0 11.5 9.5 13.0 11.5 15.0 VCC = 5.0 ± 0.5 V CL = 15 pF RL = RI = 500 W CL = 50 pF 3.5 4.5 5.1 7.1 6.0 8.0 8.5 10.5 Maximum Output Disable Time, Input OE to Y I t t (Figures 4. and 5.) VCC = 3.3 ± 0.3 V CL = 15 pF RL = RI = 500 W CL = 50 pF 6.5 8.0 9.7 13.2 11.5 15.0 14.5 18.0 VCC = 5.0 ± 0.5 V CL = 15 pF RL = RI = 500 W CL = 50 pF 4.8 7.0 6.8 8.8 8.0 10.0 10.0 12.0 10 10 10 Parameter Min Test Conditions CIN Maximum Input Capacitance 4.0 COUT Maximum 3­State Output Capacitance (Output in High Impedance State) Min ­55 TA 125°C Max Min 6.0 ns ns pF pF Typical @ 25°C, VCC = 5.0 V CPD 8.0 Power Dissipation Capacitance (Note 6) pF 6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no­load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. http://onsemi.com 3 MC74VHC1G126 MC74VHC1G126 SWITCHING WAVEFORMS 3.0 V OE 50% GND VCC A tPZL tPLZ 50% GND tPHL tPLH HIGH IMPEDANCE 50% VCC Y Y VOL +0.3V tPZH tPHZ 50% VCC VOH ­0.3V 50% VCC Y Figure 4. Switching Waveform HIGH IMPEDANCE Figure 5. Switching Waveform VCC VCC x 2 R1 PULSE GENERATOR OPEN DUT GND RT CL TEST SWITCH tPZL, tPLZ VCC x 2 tPZH, tPHZ GND tPLH, tPHL RL OPEN CL = 50 pF equivalent (Includes jig and probe capacitance) or 15 pF RL = R1 = 500 W or equivalent RT = ZOUT of pulse generator (typically 50 W) Figure 6. Test Circuit DEVICE ORDERING INFORMATION Device Nomenclature Device Order Number Circuit Indicator Temp Range Identifier Technology Device Function Package Suffix Tape & Reel Suffix Package Type (Name/SOT#/ Common Name) Tape and Reel Size MC74VHC1G126DFT1 MC74VHC1G126DFT1 MC 74 VHC1G 126 DF T1 SC­88A / SOT­353 / SC­70 178 mm (7") 3000 Unit MC74VHC1G126DFT2 MC74VHC1G126DFT2 MC 74 VHC1G 126 DF T2 SC­88A / SOT­353 / SC­70 178 mm (7") 3000 Unit MC74VHC1G126DTT1 MC74VHC1G126DTT1 MC 74 VHC1G 126 DT T1 TSOPS / SOT­23 / SC­59 178 mm (7") 3000 Unit http://onsemi.com 4 MC74VHC1G126 MC74VHC1G126 CAVITY TAPE TAPE TRAILER (Connected to Reel Hub) NO COMPONENTS 160 mm MIN TOP TAPE COMPONENTS TAPE LEADER NO COMPONENTS 400 mm MIN DIRECTION OF FEED Figure 7. Tape Ends for Finished Goods TAPE DIMENSIONS mm 4.00 1.50 TYP 4.00 2.00 1.75 3.50 $0.50 8.00 $0.30 1 1.00 MIN DIRECTION OF FEED Figure 8. SC­70­5/SC­88A/SOT­353 DFT1 Reel Configuration/Orientation TAPE DIMENSIONS mm 4.00 1.50 TYP 4.00 2.00 1.75 3.50 $0.50 8.00 $0.30 1 1.00 MIN DIRECTION OF FEED Figure 9. SC­70/SC 70/SC­88A/SOT­353 DFT2 and SOT23­5/TSOP­5/SC59 5/SC59­5 DTT1 Reel Configuration/Orientation http://onsemi.com 5 MC74VHC1G126 MC74VHC1G126 t MAX 1.5 mm MIN (0.06 in) A 13.0 mm $0.2 mm (0.512 in $0.008 in) 50 mm MIN (1.969 in) 20.2 mm MIN (0.795 in) FULL RADIUS G Figure 10. Reel Dimensions REEL DIMENSIONS Tape Size T and R Suffix A Max G t Max 8 mm T1, T2 178 mm (7 in) 8.4 mm, + 1.5 mm, ­0.0 (0.33 in + 0.059 in, ­0.00) 14.4 mm (0.56 in) DIRECTION OF FEED BARCODE LABEL POCKET Figure 11. Reel Winding Direction http://onsemi.com 6 HOLE MC74VHC1G126 MC74VHC1G126 PACKAGE DIMENSIONS SC­88A / SOT­353 / SC­70 DF SUFFIX 5­LEAD PACKAGE CASE 419A­02 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A-01 OBSOLETE. NEW STANDARD 419A-02. A G 5 DIM A B C D G H J K N S 4 ­B­ S 1 2 3 D 5 PL 0.2 (0.008) M B M N J C K H ÉÉÉ ÉÉÉ 1.9 mm ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ http://onsemi.com 7 0.65 mm 0.65 mm ÉÉÉ ÉÉÉ 0.4 mm (min) 0.5 mm (min) INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC -0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC -0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 MC74VHC1G126 MC74VHC1G126 PACKAGE DIMENSIONS TSOP­5 / SOT­23 / SC­59 DT SUFFIX 5­LEAD PACKAGE CASE 483­01 ISSUE B D S 5 4 1 2 3 B L DIM A B C D G H J K L M S G A J C 0.05 (0.002) H M K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.55 0_ 10 _ 2.50 3.00 INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0_ 10 _ 0.0985 0.1181 0.094 2.4 ÉÉÉ ÉÉÉÉ ÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉ ÉÉÉÉ ÉÉÉ ÉÉÉÉ 0.037 0.95 0.074 1.9 0.037 0.95 0.039 1.0 0.028 0.7 inches mm ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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