MBRF20200CT ITO-220AB KTHC32 - Datasheet Archive

 

SEMICONDUCTOR MBRF20200CT REVERSE VOLTAGE - 200 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS ITO-220AB FEATURES

 

LITE-ON SEMICONDUCTOR MBRF20200CT MBRF20200CT REVERSE VOLTAGE - 200 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS ITO-220AB ITO-220AB FEATURES DIM. 9.00 2.90 13.46 A D 3 F E 2 F J I Case : ITO-220AB ITO-220AB molded plastic Polarity : As marked on the body Weight : 0.06 ounces, 1.70 grams Mounting position : Any Max. mounting torque = 0.5 N.m (5.1 Kgf.cm) 15.50 10.0 3.00 D E PIN G MECHANICAL DATA ITO-220AB ITO-220AB MIN. MAX. A B C 1 94V-0 M B K C Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency Low leakage current High current capability, low VF High surge capacity Plastic package has UL flammability classification H N H L PIN 1 PIN 2 PIN 3 G H I J K 1.15 2.40 0.75 16.50 10.40 3.50 9.30 3.60 14.22 1.70 2.70 1.00 0.45 0.70 3.00 3.30 L 4.36 4.77 2.80 M 2.48 2.80 2.50 N All Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% SYMBOL CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current (See Fig.1) TC =120 C VRRM VRMS VDC I(AV) MBRF20200CT MBRF20200CT UNIT 200 140 200 10 20 V V V A Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load IFSM 180 A Voltage Rate of Change (Rated VR) dv/dt 10000 V/us TJ =25 C TJ =125 C TJ =25 C TJ =125 C VF 0.92 0.75 1.00 0.86 V @TJ =25 C @TJ =125 C IR 8 5 uA mA R0JC 2.5 C/W CJ 250 pF Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 Dielectric Strengh from terminals to case, AC with t=1 minute, RH