MBRA120T3 MBRA1100T3 MIL-S-19500 DO-214AC MIL-STD-750 MBRA140T3 MBRA160T3

MBRA120T3 thru MBRA1100T3 Chip Schottky Barrier Diodes Silicon epitaxial planer type Features SMA-L Plastic package has

Formosa MS MBRA120T3 MBRA120T3 thru MBRA1100T3 MBRA1100T3 Chip Schottky Barrier Diodes Silicon epitaxial planer type Features SMA-L Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. 0.205(5.2) 0.189(4.8) 0.012(0.3) Typ. For surface mounted applications. 0.110(2.8) 0.094(2.4) Exceeds environmental standards of MIL-S-19500 MIL-S-19500 / 228 0.181(4.6) 0.165(4.2) Low leakage current. 0.075(1.9) 0.067(1.7) 0.040(1.0) Typ. Mechanical data 0.040 (1.0) Typ. Dimensions in inches and (millimeters) Case : Molded plastic, JEDEC DO-214AC DO-214AC Terminals : Solder plated, solderable per MIL-STD-750 MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.0015 ounce, 0.05 gram MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER CONDITIONS Symbol See Fig.1 Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) 25o C VR = VRRM TA = Reverse current UNIT 1.0 A IFSM 30 A 0.5 mA 10 Junction to ambient Diode junction capacitance Rq JA f=1MHz and applied 4vDC reverse voltage Storage temperature MARKING CODE *1 V RMS *2 VR *3 (V) (V) (V) MBRA120T3 MBRA120T3 SS12 20 14 SS13 30 21 30 MBRA140T3 MBRA140T3 SS14 40 28 SS15 50 35 50 MBRA160T3 MBRA160T3 SS16 60 42 SS18 80 56 80 MBRA1100T3 MBRA1100T3 S110 100 70 100 o C Operating temperature (V) (o C) 0.50 -55 to +125 60 MBRA180T3 MBRA180T3 pF +150 40 MBRA150T3 MBRA150T3 *4 C / w 20 MBRA130T3 MBRA130T3 VF 120 -55 mA o 88 CJ TSTG V RRM TYP. IR VR = VRRM TA = 125o C Thermal resistance SYMBOLS MAX. IO Forward rectified current MIN. *1 Repetitive peak reverse voltage 0.70 *2 RMS voltage -55 to +150 0.85 *3 Continuous reverse voltage *4 Maximum forward voltage RATING AND CHARACTERISTIC CURVES (MBRA120T3 MBRA120T3 thru MBRA1100T3 MBRA1100T3) FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE FIG.2-TYPICAL FORWARD 50 0 0 4 A1 BR ~M 10 A1 BR ~M 20 0.2 0 0 20 40 60 80 100 120 140 160 180 200 AMBIENT TEMPERATURE,( C) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 10 M BR A1 50 ~M BR A1 60 A1 A1 0.4 M BR A1 20 ~M BR A R MB 0.6 INSTANTANEOUS FORWARD CURRENT,(A) 0.8 14 0 50 1.0 R MB AVERAGE FORWARD CURRENT,(A) CHARACTERISTICS 1.2 3.0 1.0 BR M A1 80 BR ~M 10 A1 0 Tj=25 C Pulse Width 300us 1% Duty Cycle 0.1 PEAK FORWARD SURGE CURRENT,(A) 30 .01 24 .1 .3 .5 .7 .9 1.1 1.3 1.5 FORWARD VOLT AGE,(V) 18 8.3ms Single Half Tj=25 C Sine Wave 12 JEDEC method 6 FIG.5 - TYPICAL REVERSE 0 CHARACTERISTICS 1 5 50 10 100 100 NUMBER OF CYCLES AT 60Hz REVERSE LEAKAGE CURRENT, (mA) FIG.4-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,(pF) 350 300 250 200 150 100 10 1.0 Tj=75 C .1 Tj=25 C 50 0 .01 .05 .1 .5 1 REVERSE VOLTAGE,(V) 5 10 50 100 .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)