IGBT-SP-02007 MBN2400E17D - Datasheet Archive

 

IGBT MODULE MBN2400E17D PRELIMINARY SPEC. Silicon N-channel IGBT FEATURES High speed, low loss IGBT module. Low driving power due

 

Spec.No.IGBT-SP-02007 IGBT-SP-02007 R4 IGBT MODULE MBN2400E17D MBN2400E17D PRELIMINARY SPEC. Silicon N-channel IGBT FEATURES High speed, low loss IGBT module. Low driving power due to low input capacitance MOS gate. Low noise due to ultra soft fast recovery diode. High reliability, high durability module. High thermal fatigue durability. (delta Tc=70°C, N>30,000cycles) Isolated heat sink (terminal to base). OUTLINE DRAWING Unit in mm CIRCUIT DIAGRAM Weight : 1300(g) Terminals ABSOLUTE MAXIMUM RATINGS (Tc=25oC ) Item Symbol Collector Emitter Voltage Gate Emitter Voltage VCES VGES DC IC Collector Current 1ms ICp DC IF Forward Current 1ms IFM Junction Temperature Tj Storage Temperature Tstg Isolation Voltage VISO Terminals (M4/M8) Screw Torque Mounting (M6) Notes: (1) Recommended Value 1.8±0.2/9±1N·m Unit MBN2400E17D MBN2400E17D V V 1,700 ±20 2,400 A 4,800 2,400 A 4,800 o C -40 ~ +125 o C -40 ~ +125 VRMS 4,000(AC 1 minute) 2/10 (1) N·m 6 (2) (2) Recommended Value 5.5±0.5N·m ELECTRICAL CHARACTERISTICS Item Symbol Unit Min. Typ. Max. Test Conditions 10 VCE=1,700V, VGE=0V, Tj=25oC Collector Emitter Cut-Off Current I CES mA o 15 50 VCE=1,700V, VGE=0V, Tj=125 C o Gate Emitter Leakage Current IGES nA -500 +500 VGE=±20V, VCE=0V, Tj=25 C Collector Emitter Saturation Voltage VCE(sat) V 2.7 3.3 IC=2,400A, VGE=15V, Tj=125oC Gate Emitter Threshold Voltage VGE(TO) V 5.5 7.0 8.5 VCE=10V, IC=240mA, Tj=25oC Input Capacitance Cies nF 210 VCE=10V, VGE=0V, f=100kHz, Tj=25oC Internal Gate Resistance (Tentative) Rge 0.6 VCE=10V, VGE=0V, f=100kHz, Tj=25oC Rise Time tr 1.1 2.2 VCC=900V, Ic=2,400A Turn On Time ton 1.6 3.2 L=55nH,CGE=220nF(TBD) (3) µs Switching Times Fall Time tf 0.3 0.6 RG=1.5(TBD) (3) o 2.0 4.0 VGE=±15V, Tj=125 C Turn Off Time toff Peak Forward Voltage Drop VFM V 1.9 2.5 Ic=2,400A, VGE=0V, Tj=125oC Reverse Recovery Time trr µs 0.7 1.4 VCC=900V, Ic=2,400A Turn On Loss Eon(10%) J/P 1.0 1.5 L=55nH,CGE=220nF(TBD) (3) Turn Off Loss Eoff(10%) J/P 0.9 1.4 RG=1.5(TBD) (3) o Reverse Recovery Loss Err(10%) J/P 0.8 1.2 VGE=±15V, Tj=125 C Stray inductance in module LSCE nH 12 Thermal Impedance IGBT Rth(j-c) o 0.010 C/W Junction to case (Tentative) FWD Rth(j-c) 0.015 o Contact Thermal Impedance Rth(c-f) C/W 0.006 Case to fin Notes:(3) RG and CGE value is the test condition's value for evaluation of the switching times, not recommended value. Please, determine the suitable RG and CGE value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision.