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Part : MB81V17800A-60PFTN Supplier : Fujitsu Manufacturer : Master Electronics Stock : 219 Best Price : $14.98 Price Each : $17.78
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MB81V17805B Datasheet

Part Manufacturer Description PDF Type
MB81V17805B-50LPFTN Fujitsu 2 M x 8 BIT HYPER PAGE MODE DYNAMIC RAM Original
MB81V17805B-50PFTN Fujitsu 2 M x 8 BIT HYPER PAGE MODE DYNAMIC RAM Original
MB81V17805B-50PJ Fujitsu 2 M x 8 BIT HYPER PAGE MODE DYNAMIC RAM Original
MB81V17805B-60LPFTN Fujitsu 2 M x 8 BIT HYPER PAGE MODE DYNAMIC RAM Original
MB81V17805B-60PFTN Fujitsu 2 M x 8 BIT HYPER PAGE MODE DYNAMIC RAM Original
MB81V17805B-60PJ Fujitsu 2 M x 8 BIT HYPER PAGE MODE DYNAMIC RAM Original

MB81V17805B

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: for CAS 70 Symbol MB81V17805B-50/50L MB81V17805B-60/60L Unit Min. Max. Min , . Parameter MB81V17805B-50L Symbol MB81V17805B-60L Min. Max. Min. Max. Unit 74 , normal bend leads, order as MB81V17805B-××PFTN and MB81V17805B-××LPFTN (Low Power) 2 To Top , × 8 BIT HYPER PAGE MODE DYNAMIC RAM MB81V17805B-50/-60/-50L/-60L CMOS 2,097,152 × 8 Bit Hyper , versions To Top / Lineup / Index MB81V17805B-50/-60/-50L/-60L s PACKAGE 28-pin plastic SOJ 28 Fujitsu
Original
DS05-11306-5E MB81V17805B-50/-60/-50L/-60L MB81V17805B F9712
Abstract: MEMORY CMOS 2 M x 8 BIT HYPER PAGE MODE DYNAMIC RAM MB81V17805B-50/-60/-50L/-60 L CMOS 2,097 , generator for high performance â'¢ Standard and low power versions MB81V17805B-50/-60/-50L/-60L â , V17805B-xxLPFTN (Low Power) 2 MB81V17805B-50/-60/-50L/-60 L â  PIN ASSIGNMENTS AND DESCRIPTIONS 28 , * 15 â¡ Vss 3 MB81V17805B-50/-60/-50L/-60L Fig. 1 - MB81V17805B DYNAMIC RAM - BLOCK DIAGRAM 4 MB81V17805B-50/-60/-50L/-60L â  FUNCTIONAL TRUTH TABLE Clock Input Address Input -
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MB81V17805B-50/-60/-50L/-60 FPT-28P-M14
Abstract: MB81V17805B-50/50L MB81V17805B-60/60L Unit Min. Max. Min. Max. tFCAC - 45 - , conditions unless otherwise noted.) No. Parameter MB81V17805B-50L Symbol MB81V17805B-60L Min , -pin plastic (400 mil) TSOP(II) with normal bend leads, order as MB81V17805B-××PFTN and MB81V17805B-××LPFTN , DYNAMIC RAM MB81V17805B-50/-60/-50L/-60L CMOS 2,097,152 × 8 Bit Hyper Page Mode Dynamic RAM s , generator for high performance · Standard and low power versions MB81V17805B-50/-60/-50L/-60L s Fujitsu
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DS05-11306-4E F9709
Abstract: tFC A C tFCAH tFC W D tFC A S tFRSH MB81V17805B-50/50L Min. - MB81V17805B-60/60L Min. - , Time Symbol tRASS tRPS tcH S MB81V17805B-50L Min. 100 84 -5 0 Max. - - - MB81V17805B-60L , high performance · Standard and low power versions MB81V17805B-50/-60/-50L/-60L PACKAGE , (Low Power) 2 MB81V17805B-50/-60/-50L/-60L 28-Pin SOJ (TO P V IE W ) < LC C -2 8P -M Q 7 , MB81V17805B-50/-60/-50L/-60L Fig. 1 - MB81V17805B DYNAMIC RAM - BLOCK DIAGRAM 4 MB81V17805B-50/-60 -
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MB81V1 D-63303
Abstract: CMOS Level MB81V17805B-50 ICC3 MB81V17805B-60 MB81V17805B-50 ICC4 MB81V17805B-60 MB81V17805B-50 |CC5 MB81V17805B-60 V tR c= mA 110 mA 90 mA 110 MB81V17805B-50/-60 â  AC , MB81V17805B-50/-60 (Continued) MB81V17805B-50 No. Parameter MB81V17805B-60 Min. Max. Min , otherwise noted.) No. Parameter Symbol MB81V17805B-50 Min. Max. MB81V17805B-60 Min. Max , MEMORY CMOS 2 M x 8 BIT HYPER PAGE MODE DYNAMIC RAM MB81V17805B-50/-60 CMOS 2,097,152 x 8 -
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MB81V17805B-50/-60 B81V17805B-60 F28040S-2C-1
Abstract: DRAM (5) i DRAM - Low Voltage Versions (CMOS) Vcc= +3.3V±0.3V, Ta=0°C to +706C Power Consumption max. (mW) Standby Operating Mods (CMOS level) Organization (Wxb) Part Number Access Time max. (ns) Cycle Time min. (ns) Packages SOJ TSOP MB81V17800A-60 M B81V 17800A-70 M B81V17800A-60L MB81V17800A-70L ®MB81 V17800B-50 ©MB81V17800B-60 ©MB81V17800B-50I ©MB81V17800B-60L 2Mx8 MB81V17805A-60 MB81V17805A-70 MB81V17805A-60L MB81V17805A-70L ©MB81V17805B-50 ®MB81 V17805B-60 ©MB81V17805B-50L -
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V17805B-60L
Abstract: cP ÏITSIJ I A M. data sheet July 1997 Revision 1.0 EDC2UV7282B-(60/70)(J/T)G-S 16MByte (2M x 72) CMOS EDO DRAM Module -3.3V (ECC) General Description The EDC2UV7282B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 72 bits, in a 168-pin, dual-in-line (DIMM) memory module with ECC. The module utilizes nine, Fujitsu MB81V17805B-60(PJ/PFTN) CMOS 2Mx8 EDO dynamic RAMs in a surface mount package on an epoxy laminate substrate -
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Abstract: cP ÏITSIJ I A M. data sheet July 1997 Revision 1.0 EDC2B V7282B-60JG-S 16MByte (2M x 72) CMOS EDO DRAM Module -3.3 V (ECC), Buffered General Description The EDC2BV7282B-60JG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 72 bits, in a 168-pins, dual-in-line (DIMM) memory module with ECC. The module utilizes nine, Fujitsu MB81V17805B-60PJ CMOS 2Mx8 EDO dynamic RAMs in a surface mount package on an epoxy laminate substrate. Each -
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74ABT16244

3654P

Abstract: DRAM 4464 -60L 60[35]*2 104[25]*4 432 MB81V17805A-70L 70[40]*2 124[30]*4 396 MB81V17805B-50 50[30]*2 84[20]*4 468 MB81V17805B-60 60[35]*2 104[25]*4 376 MB81V17805B-50L 50[30]*2 84[20]*4 468 MB81V17805B-60L 60[35]*2 104[25]*4 28P 396 MB81V17800A , refresh cycles Hyper page mode MB81V17805A L from 60 ns. 2048 refresh cycles MB81V17805B L from
Fujitsu
Original
MB814405D MB814260 3654P DRAM 4464 jeida dram 88 pin 4464 dram 1024M-bit MB814400A MB814400D MB814405C MB814400C MB814100D
Abstract: cP ÏITSIJ I A M. data sheet July 1997 Revision 1.0 EOB2UV6482B-60TG-S 16MByte (2M x 64) CMOS EDO DRAM Module -3.3V General Description The EOB2UV6482B-60TG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 64 bits, in a 144-pin, small outline dual-in-line (SO DIMM) memory module. The module utilizes eight, Fujitsu MB81V17805B-60PFTN CMOS 2Mx8 EDO dynamic RAMs in a surface mount package on an epoxy laminate substrate. Each device is -
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1Mx4 EDO RAM

Abstract: 2MX16 July 1997 Revision 1.0 data sheet EDC4UV7282B-60(J/T)G-S 32MByte (4M x 72) CMOS EDO DRAM Module - 3.3V (ECC) General Description The EDC4UV7282B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 72 bits, in a 168-pin, dual-in-line (DIMM) memory module with ECC. The module utilizes eighteen, Fujitsu MB81V17805B-60 (PJ/PFTN) CMOS 2Mx8 EDO dynamic RAMs in a surface mount package on an epoxy laminate substrate. Each device is
Fujitsu
Original
1Mx4 EDO RAM 2MX16 edo dram 50ns 72-pin simm edo dram 72-pin simm 4 m

74ABT16244

Abstract: mark edo July 1997 Revision 1.0 data sheet EDC4BV7282B-60(J/T)G-S 32MByte (4M x 72) CMOS EDO DRAM Module - 3.3V (ECC), Buffered General Description The EDC4BV7282B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 72 bits, in a 168-pins, dual-in-line (DIMM) memory module with ECC. The module utilizes eighteen, Fujitsu MB81V17805B-60(PJ/FN) CMOS 2Mx8 EDO dynamic RAMs in a surface mount package on an epoxy laminate substrate. Each device is
Fujitsu
Original
mark edo

edo dram 50ns 72-pin simm

Abstract: Fujitsu DRAM July 1997 Revision 1.0 data sheet EDC4UV6482B-60(J/T)G-S 32MByte (4M x 64) CMOS EDO DRAM Module - 3.3V General Description The EDC4UV6482B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 64 bits, in a 168-pin, dual-in-line (DIMM) memory module. The module utilizes sixteen, Fujitsu MB81V17805B-60 (PJ/PFTN) CMOS 2Mx8 EDO dynamic RAMs in a surface mount package on an epoxy laminate substrate. Each device is accompanied by a
Fujitsu
Original
Fujitsu DRAM

EOB2UV6482B-60TG-S

Abstract: MB81V17805B-60PFTN July 1997 Revision 1.0 data sheet EOB2UV6482B-60TG-S 16MByte (2M x 64) CMOS EDO DRAM Module - 3.3V General Description The EOB2UV6482B-60TG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 64 bits, in a 144-pin, small outline dual-in-line (SO DIMM) memory module. The module utilizes eight, Fujitsu MB81V17805B-60PFTN CMOS 2Mx8 EDO dynamic RAMs in a surface mount package on an epoxy laminate substrate. Each device is accompanied by a
Fujitsu
Original
edo dram 60ns 72-pin simm
Abstract: cP ÏITSIJ I A M. data sheet July 1997 Revision 1.0 EDC4UV7282B-60(J/T)G-S 32MByte (4M x 72) CMOS EDO DRAM Module -3.3V (ECC) General Description The EDC4UV7282B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 72 bits, in a 168-pin, dual-in-line (DIMM) memory module with ECC. The module utilizes eighteen, Fujitsu MB81V17805B-60 (PJ/PFTN) CMOS 2Mx8 EDO dynamic RAMs in a surface mount package on an epoxy laminate substrate. Each device is -
OCR Scan
Abstract: July 1997 Revision 1.0 data sheet EDC2UV6482B-60(J/T)G-S 16MByte (2M x 64) CMOS EDO DRAM Module - 3.3V General Description The EDC2UV6482B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 64 bits, in a 168-pin, dual-in-line (DIMM) memory module. The module utilizes eight, Fujitsu MB81V17805B-60(PJ/PFTN) CMOS 2Mx8 EDO dynamic RAMs in a surface mount package on an epoxy laminate substrate. Each device is accompanied by a Fujitsu
Original
Abstract: cP ÏITSIJ I A M. data sheet July 1997 Revision 1.0 EDC2UV6482B-60(J/T)G-S 16MByte (2M x 64) CMOS EDO DRAM Module -3.3V General Description The EDC2UV6482B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 64 bits, in a 168-pin, dual-in-line (DIMM) memory module. The module utilizes eight, Fujitsu MB81V17805B-60(PJ/PFTN) CMOS 2Mx8 EDO dynamic RAMs in a surface mount package on an epoxy laminate substrate. Each device is accompanied by a -
OCR Scan
Abstract: cP ÏITSIJ I A M. data sheet July 1997 Revision 1.0 EDC4UV6482B-60(J/T)G-S 32MByte (4Mx 64) CMOS EDO DRAM Module -3.3V General Description The EDC4UV6482B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 64 bits, in a 168-pin, dual-in-line (DIMM) memory module. The module utilizes sixteen, Fujitsu MB81V17805B-60 (PJ/PFTN) C M O S 2M x8 EDO dynamic RAMs in a surface mount package on an epoxy laminate substrate. Each device is accompanied -
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2MX16

Abstract: July 1997 Revision 1.0 data sheet EDC2UV7282B-(60/70)(J/T)G-S 16MByte (2M x 72) CMOS EDO DRAM Module - 3.3V (ECC) General Description The EDC2UV7282B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 72 bits, in a 168-pin, dual-in-line (DIMM) memory module with ECC. The module utilizes nine, Fujitsu MB81V17805B-60(PJ/PFTN) CMOS 2Mx8 EDO dynamic RAMs in a surface mount package on an epoxy laminate substrate. Each device is
Fujitsu
Original

60JG

Abstract: 74ABT16244 July 1997 Revision 1.0 data sheet EDC2BV7282B-60JG-S 16MByte (2M x 72) CMOS EDO DRAM Module - 3.3V (ECC), Buffered General Description The EDC2BV7282B-60JG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 72 bits, in a 168-pins, dual-in-line (DIMM) memory module with ECC. The module utilizes nine, Fujitsu MB81V17805B-60PJ CMOS 2Mx8 EDO dynamic RAMs in a surface mount package on an epoxy laminate substrate. Each device is accompanied by a
Fujitsu
Original
60JG

MB81V18165B-50L

Abstract: MB81V1816 Access Time for CAS 70 Symbol MB81V17805B-50/50L MB81V17805B-60/60L Unit Min. Max
Fujitsu
Original
MB81V18165B-50L MB81V1816 DS05-11304-5E MB81V18165B-50/-60/-50L/-60L MB81V18165B
Abstract: otherwise noted.) MB81V17805B-50/50L MB81V17805B-60/60L No. Parameter 69 Access Time for CAS -
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MB81V18165 B-50/-60/-50L/-60 FPT-50P-M06 F50006S-2C-1

113044e

Abstract: MB81V17805B-50/50L MB81V17805B-60/60L Unit Min. Max. Min. Max. tFCAC - 45 -
Fujitsu
Original
113044e DS05-11304-4E
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