MAX868EUB MAX868 UL94-V C/150 - Datasheet Archive
Rev. A RELIABILITY REPORT FOR MAX868EUB PLASTIC ENCAPSULATED DEVICES June 24, 2003 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR.
MAX868EUB MAX868EUB Rev. A RELIABILITY REPORT FOR MAX868EUB MAX868EUB PLASTIC ENCAPSULATED DEVICES June 24, 2003 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Written by Reviewed by Jim Pedicord Quality Assurance Reliability Lab Manager Bryan J. Preeshl Quality Assurance Executive Director Conclusion The MAX868 MAX868 successfully meets the quality and reliability standards required of all Maxim products. In addition, Maxim's continuous reliability monitoring program ensures that all outgoing product will continue to meet Maxim's quality and reliability standards. Table of Contents I. .Device Description II. .Manufacturing Information III. .Packaging Information IV. .Die Information V. .Quality Assurance Information VI. .Reliability Evaluation .Attachments I. Device Description A. General The MAX868 MAX868 inverting charge pump provides a low-cost and compact means of generating a regulated negative voltage up to -2 x VIN from a positive input voltage between 1.8V and 5.5V. It uses a pulse-frequency-modulation (PFM) control scheme to generate the regulated negative output voltage. PFM operation is obtained by gating the internal 450kHz oscillator on and off as needed to maintain output voltage regulation. This unique on-demand switching scheme gives the MAX868 MAX868 excellent light-load efficiency without degrading its full-load operation (up to 30mA), permitting smaller capacitors to take advantage of the oscillator's high switching frequency. The MAX868 MAX868 requires no inductors; only our capacitors are required to build a complete DC-DC f converter. Output voltage regulation is achieved by adding just two resistors. The MAX868 MAX868 comes in a 10-pin µMAX package, which is only 1.11mm high and occupies just half the board area of a standard 8-pin SO. B. Absolute Maximum Ratings Item IN to GND OUT to GND IN to OUT C1+ to GND C1- to GND C2+ to GND C2- to GND /SHDN, FB to GND PGND to GND Output Current Short-Circuit Duration Storage Temp. Lead Temp. (10 sec.) Continuous Power Dissipation (TA = +70°C) 10-Pin µMAX Derates above +70°C 10-Pin µMAX Rating -0.3V to +6V +0.3V to -12V -0.3V to -17V (V IN - 12V) to (V IN + 0.3V) +0.3V to -12V (V IN + 0.3V) to -6V +0.3V to -6V -0.3V to (V IN + 0.3V) -0.3V to +0.3V 35mA Continuous -65°C to +160°C +300°C 330mW 5.6mW/°C II. Manufacturing Information A. Description/Function: Regulated, Adjustable -2x Inverting Charge Pump B. Process: SG5 (Standard 5 micron silicon gate CMOS) C. Number of Device Transistors: 96 D. Fabrication Location: California or Oregon, USA E. Assembly Location: Malaysia, Thailand or Philippines F. Date of Initial Production: October, 1997 III. Packaging Information A. Package Type: 10-Lead µMAX B. Lead Frame: Copper C. Lead Finish: Solder Plate D. Die Attach: Silver-filled Epoxy E. Bondwire: Gold (1.3 mil dia.) F. Mold Material: Epoxy with silica filler G. Assembly Diagram: # 05-1101-0047 H. Flammability Rating: Class UL94-V UL94-V 0 IV. Die Information A. Dimensions: 61 x 87 mils B. Passivation: Si3N4/SiO2 (Silicon nitride/ Silicon dioxide) C. Interconnect: Aluminum/Si (Si = 1%) D. Backside Metallization: None E. Minimum Metal Width: 5 microns (as drawn) F. Minimum Metal Spacing: 5 microns (as drawn) G. Bondpad Dimensions: 5 mil. Sq. H. Isolation Dielectric: SiO2 I. Die Separation Method: Wafer Saw V. Quality Assurance Information A. Quality Assurance Contacts: Jim Pedicord (Manager, Rel Operations) Bryan Preeshl (Executive Director of QA) Kenneth Huening (Vice President) B. Outgoing Inspection Level: 0.1% for all electrical parameters guaranteed by the Datasheet. 0.1% For all Visual Defects. C. Observed Outgoing Defect Rate: < 50 ppm D. Sampling Plan: Mil-Std-105D VI. Reliability Evaluation A. Accelerated Life Test The results of the 135°C biased (static) life test are shown in Table 1. Using these results, the Failure Rate () is calculated as follows: = 1 = MTTF 1.83 (Chi square value for MTTF upper limit) 192 x 4389 x 155 x 2 Temperature Acceleration factor assuming an activation energy of 0.8eV = 7.01 x 10 -9 = 7.01F.I.T. (60% confidence level @ 25°C) This low failure rate represents data collected from Maxim's reliability qualification and monitor programs. Maxim also performs weekly Burn-In on samples from production to assure reliability of its processes. The reliability required for lots which receive a burn-in qualification is 59 F.I.T. at a 60% confidence level, which equates to 3 failures in an 80 piece sample. Maxim performs failure analysis on rejects from lots exceeding this level. The attached Burn-In Schematic (Spec. # 06-5289) shows the static circuit used for this test. Maxim also performs 1000 hour life test monitors quarterly for each process. This data is published in the Product Reliability Report (RR-1M). B. Moisture Resistance Tests Maxim evaluates pressure pot stress from every assembly process during qualification of each new design. Pressure Pot testing must pass a 20% LTPD for acceptance. Additionally, industry standard 85°C/85%RH or HAST tests are performed quarterly per device/package family. C. E.S.D. and Latch-Up Testing The PX25 die type has been found to have all pins able to withstand a transient pulse of ±2500V, per Mil-Std-883 Method 3015 (reference attached ESD Test Circuit). Latch-Up testing has shown that this device withstands a current of ±100mA. Table 1 Reliability Evaluation Test Results MAX868EUB MAX868EUB TEST ITEM TEST CONDITION Static Life Test (Note 1) Ta = 135°C Biased Time = 192 hrs. FAILURE IDENTIFICATION DC Parameters & functionality SAMPLE SIZE NUMBER OF FAILURES 155 PACKAGE 0 77 0 0 Moisture Testing (Note 2) Pressure Pot Ta = 121°C P = 15 psi. RH= 100% Time = 168hrs. DC Parameters & functionality uMAX 85/85 Ta = 85°C RH = 85% Biased Time = 1000hrs. DC Parameters & functionality 77 DC Parameters 77 Mechanical Stress (Note 2) Temperature Cycle -65°C/150 C/150°C 1000 Cycles Method 1010 Note 1: Life Test Data may represent plastic DIP qualification lots. Note 2: Generic Package/Process data 0 Attachment #1 TABLE II. Pin combination to be tested. 1/ 2/ Terminal A (Each pin individually connected to terminal A with the other floating) Terminal B (The common combination of all like-named pins connected to terminal B) 1. All pins except VPS1 3/ All VPS1 pins 2. All input and output pins All other input-output pins 1/ Table II is restated in narrative form in 3.4 below. 2/ No connects are not to be tested. 3/ Repeat pin combination I for each named Power supply and for ground (e.g., where VPS1 is VDD , VCC , VSS, VBB, GND, +VS, -VS, VREF , etc). 3.4 Pin combinations to be tested. a. Each pin individually connected to terminal A with respect to the device ground pin(s) connected to terminal B. All pins except the one being tested and the ground pin(s) shall be open. b. Each pin individually connected to terminal A with respect to each different set of a combination of all named power supply pins (e.g., VSS1, or VSS2 or VSS3 or VCC1, or VCC2) connected to terminal B. All pins except the one being tested and the power supply pin or set of pins shall be open. c. Each input and each output individually connected to terminal A with respect to a combination of all the other input and output pins connected to terminal B. All pins except the input or output pin being tested and the combination of all the other input and output pins shall be open. TERMINAL C R1 R2 S1 TERMINAL A REGULATED HIGH VOLTAGE SUPPLY S2 C1 DUT SOCKET SHORT TERMINAL B TERMINAL D Mil Std 883D Method 3015.7 Notice 8 R = 1.5k C = 100pf CURRENT PROBE (NOTE 6)