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MARKING 41B

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: (FO 41B). QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in an unneutralized , .; class-C 4,2 24 typ. 3,0 typ. 6,0 typ. 33 12 + j35 2,5 -j 10 MECHANICAL DATA FO-41B (see Fig. 1). , –  _£-33 -07 MECHANICAL DATA Fig. 1 F0-41B. Base and metallic cap connected to flange Pinning: 1 = , t 1,7 max sealing Torque on screw: max. 0,4 Nm Recommended screw: M2,5 or 4-40 UNC/2A Marking ... OCR Scan
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4 pages,
105.46 Kb

PTB42003X marking TI33 marking code 41b IEC134 f041b dust cap LC 2A marking code MARKING 41B Zn33 TEXT
datasheet frame
Abstract: metal ceramic flange envelope (FO 41B), QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C , 2 16 2450 8,2 400 2,8+j2,25 7,9—j 1,3 MECHANICAL DATA FO-41B {see Fig. 1). PRODUCT SAFETY This , Manufacturer N AMER PHILIPS/DISCRETE LTE42012R LTE42012R MECHANICAL DATA Fig. 1 F0-41B. Emitter and metallic cap , ” □ I 7-33-OS 7-33-OS Dimensions in mm Marking code: RTC198 RTC198 (1) Flatness of this area ensures full ... OCR Scan
datasheet

5 pages,
135.61 Kb

LTE42012R 5j12 TEXT
datasheet frame
Abstract: transistor is housed in a metal ceramic flange envelope (FO 41B), Q U IC K R E F E R E N C E D A T A , 8,2 400 2,8+j2,25 7,9—j 1,3 PL1 mW M E C H A N IC A L D A T A FO-41B {see Fig. 1 , V. M E C H A N IC A L D A T A Dimensions in mm Fig. 1 FO-41B. Emitter and metallic cap , Recommended screw: M2,5 Marking code: RTC198 RTC198 (1) Flatness of this area ensures full thermal contact with ... OCR Scan
datasheet

5 pages,
163.39 Kb

TEXT
datasheet frame
Abstract: millicoulombs/shot 0.4 coulomb 30 86(8) GP-74B GP-74B 20 42 GP-32B GP-32B TR-148A TR-148A 42(8) GP-41B , -30B, GP-32B GP-32B AND GP-41B CLEARANCE FOR A NO. 8 SCREW 6 HOLES EACH END ON A 3.937 B.C. GP-74B GP-74B and GP , 30B GP-15B GP-15B, 32B AND 41B A MAX 2.375 3.625 B MAX 0.750 0.250 GLAZED CERAMIC TYPE GP , inch-pounds maximum. Marking PerkinElmer's trademark, part designation, and date code. PerkinElmer ... PerkinElmer Optoelectronics
Original
datasheet

4 pages,
65.61 Kb

GP-14B GP-20B PerkinElmer trigger mode GP-91 gp-74b TR-1795 GP-41B GP-87 tr-1700 GP-46B spark gap trigger transformer PerkinElmer tr-148a PerkinElmer spark gaps GP-12B PerkinElmer 1795 PerkinElmer transformer tr-180b Triggered spark gap TM-11A Trigger Module PerkinElmer spark gap TEXT
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Abstract: €” jl O Dimensions in mm FO-41B (see Fig. 1). PR O D U C T S A F E T Y This device incorporates , 2 ^ 3 3 -0 7 M E C H A N IC A L D A T A Dimensions in mm Fig. 1 FO-41B. 0,1 Base and , Marking code: RTC 4203X 4203X (1) Flatness of this area ensures full thermal contact with bolt head. 258 ... OCR Scan
datasheet

4 pages,
125.76 Kb

TEXT
datasheet frame
Abstract: ceramic flange envelope (FO-41B). QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a , ; class-C 4.2 24 >2.5 >5 >28 i I 12 + j35 I 2.5-j10 MECHANICAL DATA Dimensions in mm FO-41B (see Fig.1). , «, » « Marking code: 4203X 4203X (1) Flatness of this area ensures full thermal contact with bolt head ... OCR Scan
datasheet

4 pages,
173.44 Kb

PTB42003X V33-07 TEXT
datasheet frame
Abstract: ceramic flange envelope (FO-41B). QUICK REFERENCE DATA Microwave performance up to Tm5 = 25 °C in a , ; class-C 4.2 24 >2.5 >5 >28 i I 12 + j35 I 2.5 — j 10 MECHANICAL DATA Dimensions in mm FO-41B (see Fig , Recommended screw: M2.5 or 4-40 UNC/2A 3« 4 rr _rpT JT^ i *5 Häül ; Marking code: 4203X 4203X (1 ... OCR Scan
datasheet

4 pages,
86.45 Kb

PTB42003X 7Z94083 marking A1 TRANSISTOR MARKING 41B TRANSISTOR K 314 V33-07 TEXT
datasheet frame
Abstract: circuits. The transistors are housed in a metal-ceramic envelope (FO-41B). The LTE21009RA LTE21009RA is tested by , . 8.5 MECHANICAL DATA Dimensions in mm FO-41B (see Fig.1). WARNING Product and environmental safety , FO-41B. SbE » ■ 711002b 0D4bBn ÛT4 «PHIN Dimensions in mm Emitter and metallic cap are , Nm Recommended screw: M2.5 Marking code: 435 = LTE21009R LTE21009R 435A = LTE21009RA LTE21009RA (1) Flatness of this ... OCR Scan
datasheet

4 pages,
106.63 Kb

transistor 81 110 w 85 435A 435A MARKING CODE 95A 640 LTE21009R LTE21009RA marking 113a MARKING 41B marking code 41b transistor 81 110 w 63 113A db FO-41B TEXT
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Abstract: OC292 j6 PTB23005X PTB23005X CW 2 24 >5 >9.2 >50 1.9 + j12 7.5 + j3 MECHANICAL DATA F0-41B (see Fig.1). WARNING , MECHANICAL DATA Fig.1 FO-41B. SbE D T-33-01 T-33-01 711DflEb ODMbMB? 732 HIPHIN Dimensions in mm Base and , . 0.5 Nm Recommended screw: M2.5 Marking code: 2301X 2301X for PTB23001X PTB23001X 2303X 2303X for PTB23003X PTB23003X 2305X 2305X for ... OCR Scan
datasheet

5 pages,
127 Kb

PTB23005X PTB23003XA PTB23003X PTB23001X H440 TEXT
datasheet frame
Abstract: envelope (FO-41B). QUICK REFERENCE DATA R.F. performance up to T mb = 25 °C in an unneutralized , 400 Gpo dB PL1 W typ . 2,8 MECHANICAL DATA typ. 7,8 Dimensions in mm Fig. 1 FO-41B , 2 = base 3 = emitter Torque on nut: max. 0,4 Nm Recommended screw: M2,5 Marking code; RTC439 RTC439 ... OCR Scan
datasheet

4 pages,
130.72 Kb

TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
. . . . . . . . . . pag. 49 Table 41B. Statistical Process Control: CMOS T6/0.6mm Process Flash revision identifier. This letter is marked after the datecode on device marking. Test Procedure letter is marked after the datecode on device marking. Test Procedure MIL-STD-883 MIL-STD-883 Procedure Test marked after the datecode on device marking. Test Procedure MIL-STD-883 MIL-STD-883 Procedure Test Conditions Die revision identifier. This letter is marked after the datecode on device marking. Test Procedure
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6351-v3.htm
STMicroelectronics 25/05/2000 65.91 Kb HTM 6351-v3.htm
Line . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . pag. 53 Table 41B. Statistical revision identifier. This letter is marked after the datecode on device marking. Test Procedure marking. Test Procedure MIL-STD-883 MIL-STD-883 Procedure Test Conditions M27C801 M27C801 (D) Samp. Fail Operating Life datecode on device marking. Test Procedure MIL-STD-883 MIL-STD-883 Procedure Test Conditions M27C1001 M27C1001 (F datecode on device marking. Test Procedure MIL-STD-883 MIL-STD-883 Procedure Test Conditions M27C4001 M27C4001 (F) M27C800 M27C800
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6655-v1.htm
STMicroelectronics 25/05/2000 70.03 Kb HTM 6655-v1.htm
. . . . . . . . . . pag. 48 Table 41B. Statistical Process Control: CMOS T6/0.6mm Process Flash datecode on device marking. Table 5A. CMOS E5/0.6 m m Process (-35% upgrade) UV EPROM Reliability Data, Die datecode on device marking. Table 5B. CMOS E5/0.6 m m Process (-35% upgrade) UV EPROM Reliability Data, Die This letter is marked after the datecode on device marking. Table 6. CMOS E6/0.6 m m Process ( -10% marked after the datecode on device marking. Table 7. CMOS E6DM/0.6 m m Process UV EPROM Reliability Data
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6242.htm
STMicroelectronics 20/10/2000 68.54 Kb HTM 6242.htm
Line . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . pag. 48 Table 41B. Statistical This letter is marked after the datecode on device marking. Table 5A. CMOS E5/0.6 m m Process (-35% identifier. This letter is marked after the datecode on device marking. Table 5B. CMOS E5/0.6 m m Process marking. Table 6. CMOS E6/0.6 m m Process ( -10% upgrade) UV EPROM Reliability Data, Die Related Tests July represents the Die revision identifier. This letter is marked after the datecode on device marking. Table 7.
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6242-v2.htm
STMicroelectronics 14/06/1999 62.24 Kb HTM 6242-v2.htm
Diffusion Line . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . pag. 53 Table 41B. Statistical the datecode on device marking. Test Procedure MIL-STD-883 MIL-STD-883 Procedure Test Conditions M27C256 M27C256 (D represents the Die revision identifier. This letter is marked after the datecode on device marking. Test identifier. This letter is marked after the datecode on device marking. Test Procedure MIL-STD-883 MIL-STD-883 Procedure marked after the datecode on device marking. Test Procedure MIL-STD-883 MIL-STD-883 Procedure Test Conditions
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6655.htm
STMicroelectronics 20/10/2000 74.66 Kb HTM 6655.htm
Table 41B. Statistical Process Control: CMOS T6/0.6mm Process Flash Memory, Agrate - Italy R1 Diffusion revision identifier. This letter is marked after the datecode on device marking. Test Procedure MIL-STD-883 MIL-STD-883 marked after the datecode on device marking. Test Procedure MIL-STD-883 MIL-STD-883 Procedure Test Conditions revision identifier. This letter is marked after the datecode on device marking. Test Procedure marking. Test Procedure MIL-STD-883 MIL-STD-883 Procedure Test Conditions M27C4001 M27C4001 (F) M27C800 M27C800 (F) M27C160 M27C160 (F) Samp.
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6351-v2.htm
STMicroelectronics 14/06/1999 64.03 Kb HTM 6351-v2.htm
. . . . . . . . . . pag. 49 Table 41B. Statistical Process Control: CMOS T6/0.6mm Process Flash represents the Die revision identifier. This letter is marked after the datecode on device marking. Test identifier. This letter is marked after the datecode on device marking. Test Procedure MIL-STD-883 MIL-STD-883 Procedure represents the Die revision identifier. This letter is marked after the datecode on device marking. Test datecode on device marking. Test Procedure MIL-STD-883 MIL-STD-883 Procedure Test Conditions M27C4001 M27C4001 (F) M27C800 M27C800 (F
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6351.htm
STMicroelectronics 20/10/2000 70.45 Kb HTM 6351.htm
. . . . . . . . . . pag. 48 Table 41B. Statistical Process Control: CMOS T6/0.6mm Process Flash represents the Die revision identifier. This letter is marked after the datecode on device marking. Table represents the Die revision identifier. This letter is marked after the datecode on device marking. Table device marking. Table 6. CMOS E6/0.6 m m Process ( -10% upgrade) UV EPROM Reliability Data, Die Related marking. Table 7. CMOS E6DM/0.6 m m Process UV EPROM Reliability Data, Die Related Tests July 1997 to
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6242-v3.htm
STMicroelectronics 25/05/2000 64.11 Kb HTM 6242-v3.htm
Table 41B. Statistical Process Control: CMOS T6/0.6mm Process Flash Memory, Agrate - Italy R1 Diffusion revision identifier. This letter is marked after the datecode on device marking. Test Procedure MIL-STD-883 MIL-STD-883 marked after the datecode on device marking. Test Procedure MIL-STD-883 MIL-STD-883 Procedure Test Conditions revision identifier. This letter is marked after the datecode on device marking. Test Procedure marking. Test Procedure MIL-STD-883 MIL-STD-883 Procedure Test Conditions M27C4001 M27C4001 (F) M27C800 M27C800 (F) M27C160 M27C160 (F) Samp.
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6351-v1.htm
STMicroelectronics 02/04/1999 64.07 Kb HTM 6351-v1.htm
Diffusion Line . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . pag. 53 Table 41B. Statistical the datecode on device marking. Test Procedure MIL-STD-883 MIL-STD-883 Procedure Test Conditions M27C256 M27C256 (D represents the Die revision identifier. This letter is marked after the datecode on device marking. Test identifier. This letter is marked after the datecode on device marking. Test Procedure MIL-STD-883 MIL-STD-883 Procedure marked after the datecode on device marking. Test Procedure MIL-STD-883 MIL-STD-883 Procedure Test Conditions
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6655-v2.htm
STMicroelectronics 14/06/1999 68.16 Kb HTM 6655-v2.htm