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MARKING 41B

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Abstract: easier design of wideband circuits The transistor is housed in a metal ceramic flange envelope (FO 41B). , typ. 3,0 typ. 6,0 typ. 33 12 + j35 2,5 -j 10 MECHANICAL DATA FO-41B (see Fig. 1). Dimensions in mm , -07 MECHANICAL DATA Fig. 1 F0-41B. Base and metallic cap connected to flange Pinning: 1 = , t 1,7 max sealing Torque on screw: max. 0,4 Nm Recommended screw: M2,5 or 4-40 UNC/2A Marking ... OCR Scan
datasheet

4 pages,
105.46 Kb

PTB42003X marking code 41b IEC134 f041b dust cap LC 2A marking code MARKING 41B Zn33 datasheet abstract
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Abstract: 32B marking marking 31B 43B MARKING marking 43b CMBZ52XX CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 2.6 2.4 0.60 0.40 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.48 338 _1.02 0.8 ... OCR Scan
datasheet

1 pages,
22.26 Kb

338 zener CMBZ5257B CMBZ52XX diode 43b marking 8J marking 53B general purpose zener diode ro 43B diode 47B zener 46B zener 47B diode Zener diode 81A 52B zener zener 35b CMBZ52XX abstract
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Abstract: (FO-41B). QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class-C selective , I 12 + j35 I 2.5-j10 MECHANICAL DATA Dimensions in mm FO-41B (see Fig.1). WARNING Product and , Recommended screw: M2.5 or 4-40 UNC/2A 345 I _ 290_[T_ _i '5 i I .7 m«, » « Marking code: 4203X 4203X (1 ... OCR Scan
datasheet

4 pages,
173.44 Kb

PTB42003X PTB42003X abstract
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Abstract: (FO-41B). QUICK REFERENCE DATA Microwave performance up to Tm5 = 25 °C in a common-base class-C selective , I 12 + j35 I 2.5 - j 10 MECHANICAL DATA Dimensions in mm FO-41B (see Fig.1). WARNING Product and , rr _rpT JT^ i *5 Häül ; Marking code: 4203X 4203X (1) Flatness of this area ensures full thermal ... OCR Scan
datasheet

4 pages,
86.45 Kb

PTB42003X 7Z94083 marking A1 TRANSISTOR MARKING 41B TRANSISTOR K 314 PTB42003X abstract
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Abstract: Marking 43B 43B MARKING CMBZ52XX CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 2.6 2.4 0.60 0.40 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.48 338 _1.02 0.8 ... OCR Scan
datasheet

2 pages,
31.6 Kb

CMBZ-5253B CMBZ-5254B CMBZ-5255B CMBZ-5256B CMBZ5230B CMBZ5239B CMBZ5248B 40b marking marking 8U diode 43b CMBZ5257B 5252B CMBZ-5252B 8f zener CMBZ52XX CMBZ52XX abstract
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Abstract: millicoulombs/shot 0.4 coulomb 30 86(8) GP-74B GP-74B 20 42 GP-32B GP-32B TR-148A TR-148A 42(8) GP-41B , AND GP-41B CLEARANCE FOR A NO. 8 SCREW 6 HOLES EACH END ON A 3.937 B.C. GP-74B GP-74B and GP-81B GP-81B A , 30B GP-15B GP-15B, 32B AND 41B A MAX 2.375 3.625 B MAX 0.750 0.250 GLAZED CERAMIC TYPE , applied to studs 6 inch-pounds maximum. Marking PerkinElmer's trademark, part designation, and date ... Original
datasheet

4 pages,
65.61 Kb

GP-14B GP-90 tr-148a GP-20B PerkinElmer trigger mode GP-46B GP-41B tr-1700 spark gap trigger transformer TR-1795 GP-87 PerkinElmer tr-148a PerkinElmer spark gaps GP-12B datasheet abstract
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Abstract: transistors are housed in a metal-ceramic envelope (FO-41B). The LTE21009RA LTE21009RA is tested by sampling on RF , DATA Dimensions in mm FO-41B (see Fig.1). WARNING Product and environmental safety - toxic materials , LTE21009RA LTE21009RA y 7-33-05 V PHILIPS INTERNATIONAL MECHANICAL DATA Fig. 1 FO-41B. SbE » - 711002b 0D4bBn ÛT4 , collector 2 = base 3 = emitter Torque on screw : max. 0.4 Nm Recommended screw: M2.5 Marking code: 435 ... OCR Scan
datasheet

4 pages,
106.63 Kb

transistor 81 110 w 85 435A 435A MARKING CODE 95A 640 LTE21009R LTE21009RA marking 113a MARKING 41B marking code 41b transistor 81 110 w 63 113A db 21009R LTE21009R abstract
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Abstract: envelope (FO 41B), QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in an unneutralized , 1,3 MECHANICAL DATA FO-41B {see Fig. 1). PRODUCT SAFETY This device incorporates beryllium oxide , LTE42012R LTE42012R MECHANICAL DATA Fig. 1 F0-41B. Emitter and metallic cap connected to flange. Torque on screw , Marking code: RTC198 RTC198 (1) Flatness of this area ensures full thermal contact with bolt head. 120 July ... OCR Scan
datasheet

5 pages,
135.61 Kb

LTE42012R 5j12 LTE42012R abstract
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Abstract: TR-1795 TR-1795 20 50 kA peak 42(8) GP-41B lp = 10 Aac A,B 30 GP-14B GP-14B TR1700 TR1700 0.5 , DIA A "O" GP-12B GP-12B, GP-14B GP-14B, GP-15B GP-15B, GP-22B GP-22B, GP-30B GP-30B GP-32B GP-32B, AND GP-41B CLEARANCE FOR A NO. 8 , Torque applied to studs 6 inch-pounds maximum. Marking PerkinElmer's trademark, part designation ... Original
datasheet

4 pages,
55.18 Kb

PerkinElmer 1700 GP-31B GP-20B-20 GP-91 GP-12B GP-32B GP-46B TM-11A transformer TR-1700 PerkinElmer trigger mode Triggered spark gap GP-14B tr-148a PerkinElmer spark gap datasheet abstract
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Abstract: OC292 PTB23005X PTB23005X CW 2 24 >5 >9.2 >50 1.9 + j12 7.5 + j3 MECHANICAL DATA F0-41B (see Fig.1). WARNING Product and , Fig.1 FO-41B. SbE D T-33-01 T-33-01 711DflEb ODMbMB? 732 HIPHIN Dimensions in mm Base and metallic cap , Recommended screw: M2.5 Marking code: 2301X 2301X for PTB23001X PTB23001X 2303X 2303X for PTB23003X PTB23003X 2305X 2305X for PTB23005X PTB23005X (1 ... OCR Scan
datasheet

5 pages,
127 Kb

PTB23005X PTB23003XA PTB23003X PTB23001X H440 23001X 23003XA 23001X abstract
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. . . . . . . . . . pag. 48 Table 41B. Statistical Process Control: CMOS T6/0.6mm Process Flash datecode on device marking. Table 5A. CMOS E5/0.6 m m Process (-35% upgrade) UV EPROM Reliability Data, Die datecode on device marking. Table 5B. CMOS E5/0.6 m m Process (-35% upgrade) UV EPROM Reliability Data, Die This letter is marked after the datecode on device marking. Table 6. CMOS E6/0.6 m m Process ( -10% marked after the datecode on device marking. Table 7. CMOS E6DM/0.6 m m Process UV EPROM Reliability Data
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STMicroelectronics 14/06/1999 62.24 Kb HTM 6242-v2.htm
. . . . . . . . . . pag. 48 Table 41B. Statistical Process Control: CMOS T6/0.6mm Process Flash datecode on device marking. Table 5A. CMOS E5/0.6 m m Process (-35% upgrade) UV EPROM Reliability Data, Die datecode on device marking. Table 5B. CMOS E5/0.6 m m Process (-35% upgrade) UV EPROM Reliability Data, Die This letter is marked after the datecode on device marking. Table 6. CMOS E6/0.6 m m Process ( -10% marked after the datecode on device marking. Table 7. CMOS E6DM/0.6 m m Process UV EPROM Reliability Data
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STMicroelectronics 02/04/1999 62.28 Kb HTM 6242-v1.htm
. . . . . . . . . . pag. 49 Table 41B. Statistical Process Control: CMOS T6/0.6mm Process Flash represents the Die revision identifier. This letter is marked after the datecode on device marking. Test identifier. This letter is marked after the datecode on device marking. Test Procedure MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 Procedure represents the Die revision identifier. This letter is marked after the datecode on device marking. Test datecode on device marking. Test Procedure MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 Procedure Test Conditions M27C4001 M27C4001 M27C4001 M27C4001 (F) M27C800 M27C800 M27C800 M27C800 (F
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STMicroelectronics 02/04/1999 64.07 Kb HTM 6351-v1.htm
. . . . . . . . . . pag. 49 Table 41B. Statistical Process Control: CMOS T6/0.6mm Process Flash represents the Die revision identifier. This letter is marked after the datecode on device marking. Test identifier. This letter is marked after the datecode on device marking. Test Procedure MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 Procedure represents the Die revision identifier. This letter is marked after the datecode on device marking. Test datecode on device marking. Test Procedure MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 Procedure Test Conditions M27C4001 M27C4001 M27C4001 M27C4001 (F) M27C800 M27C800 M27C800 M27C800 (F
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STMicroelectronics 14/06/1999 64.03 Kb HTM 6351-v2.htm
. . . . . . . . . . . . . . . . . . . . . . . . . . pag. 48 Table 41B. Statistical Process marked after the datecode on device marking. Table 5A. CMOS E5/0.6 m m Process (-35% upgrade) UV EPROM datecode on device marking. Table 5B. CMOS E5/0.6 m m Process (-35% upgrade) UV EPROM Reliability Data datecode on device marking. Table 6. CMOS E6/0.6 m m Process ( -10% upgrade) UV EPROM Reliability Data marked after the datecode on device marking. Table 7. CMOS E6DM/0.6 m m Process UV EPROM Reliability
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STMicroelectronics 25/05/2000 64.11 Kb HTM 6242-v3.htm
41B. Statistical Process Control: CMOS T6/0.6mm Process Flash Memory, Agrate - Italy R1 Diffusion Line This letter is marked after the datecode on device marking. Table 5A. CMOS E5/0.6 m m Process (-35% This letter is marked after the datecode on device marking. Table 5B. CMOS E5/0.6 m m Process (-35% identifier. This letter is marked after the datecode on device marking. Table 6. CMOS E6/0.6 m m Process identifier. This letter is marked after the datecode on device marking. Table 7. CMOS E6DM/0.6 m m Process UV
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STMicroelectronics 20/10/2000 68.54 Kb HTM 6242.htm
. . . . . . . . . . . . . . . . . . . . . . . . . . pag. 49 Table 41B. Statistical Process represents the Die revision identifier. This letter is marked after the datecode on device marking. Test marked after the datecode on device marking. Test Procedure MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 Procedure Test Conditions represents the Die revision identifier. This letter is marked after the datecode on device marking. Test marked after the datecode on device marking. Test Procedure MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 Procedure Test Conditions
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STMicroelectronics 25/05/2000 65.91 Kb HTM 6351-v3.htm
. . . . . . . . . . pag. 49 Table 41B. Statistical Process Control: CMOS T6/0.6mm Process Flash revision identifier. This letter is marked after the datecode on device marking. Test Procedure letter is marked after the datecode on device marking. Test Procedure MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 Procedure Test marked after the datecode on device marking. Test Procedure MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 Procedure Test Conditions Die revision identifier. This letter is marked after the datecode on device marking. Test Procedure
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STMicroelectronics 20/10/2000 70.45 Kb HTM 6351.htm
Diffusion Line . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . pag. 53 Table 41B. Statistical the datecode on device marking. Test Procedure MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 Procedure Test Conditions M27C256 M27C256 M27C256 M27C256 (D represents the Die revision identifier. This letter is marked after the datecode on device marking. Test identifier. This letter is marked after the datecode on device marking. Test Procedure MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 Procedure letter is marked after the datecode on device marking. Test Procedure MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 Procedure Test
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STMicroelectronics 14/06/1999 68.16 Kb HTM 6655-v2.htm
Line . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . pag. 53 Table 41B. Statistical revision identifier. This letter is marked after the datecode on device marking. Test Procedure marking. Test Procedure MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 Procedure Test Conditions M27C801 M27C801 M27C801 M27C801 (D) Samp. Fail Operating Life datecode on device marking. Test Procedure MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 Procedure Test Conditions M27C1001 M27C1001 M27C1001 M27C1001 (F datecode on device marking. Test Procedure MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 Procedure Test Conditions M27C4001 M27C4001 M27C4001 M27C4001 (F) M27C800 M27C800 M27C800 M27C800
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STMicroelectronics 20/10/2000 74.66 Kb HTM 6655.htm