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MARKING W2 SOT23 TRANSISTOR

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Abstract: MMBTA20 MMBTA20 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM , CoHector Min 40 4 40 125 Max Unit V V nA V MHz pF 100 400 0.25 4 Marking _ B , EMBOSSED CARRIER Specification for SOT-23 Unit: mm É SAMSUNG SEMICONDUCTOR 605 S AM S U N G , p, p, w Wo W, W2 H H, Ho 12.7 + 0.5 12.7+0.2 3 .8 5 ± 0 .5 6 .3 5 ± 0 .5 1 fi*15 0 10-0 6 , 2 0 TO-92 AMMO PACK Unit: mm FLAT SIDE OF TRANSISTOR and ADHESIVE TAPE VISIBLE ... OCR Scan
datasheet

6 pages,
303.59 Kb

MARKING W2 SOT23 TRANSISTOR datasheet abstract
datasheet frame
Abstract: TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR T -A ^ -lS SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C , Current Gain-Bandwidth Product 150 450 0.55 100 900 0.3 0.65 V V MHz Marking R D 8 0 ET , CARRIER Specification for SOT-23 Unit: mm É SAMSUNG SEMICONDUCTOR 605 S AM S U N G , p, p, w Wo W, W2 H H, Ho 12.7 + 0.5 12.7+0.2 3 .8 5 ± 0 .5 6 .3 5 ± 0 .5 1 fi*15 0 10-0 6 , - 2 0 TO-92 AMMO PACK Unit: mm FLAT SIDE OF TRANSISTOR and ADHESIVE TAPE VISIBLE ... OCR Scan
datasheet

6 pages,
300.64 Kb

MARKING W2 SOT23 TRANSISTOR MMBC1622D8 MMBC1622D8 abstract
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Abstract: MMBA812M3 MMBA812M3 PNP EPITAXIAL SILICON TRANSISTOR^27 ^ i GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE , nA V V 60 Marking - R M 3 ö 0 g | | SAMSUNG SEMICONDUCTOR 502 SAMSUNG , DIMENSIONS T ^ q i- ^ o TO-3P Unit: mm EMBOSSED CARRIER Specification for SOT-23 Unit: mm É , TO-92 TAPING SPECIFICATION Unit: mm p Po p, p, w Wo W, W2 H H, Ho F F,-F, Do 12.7 + , SIDE OF TRANSISTOR and ADHESIVE TAPE VISIBLE SAMSUNG'S AMMO PACK is equivalent to styles A,B,C,D of ... OCR Scan
datasheet

6 pages,
298.99 Kb

MMBA812M3 MARKING W2 SOT23 TRANSISTOR datasheet abstract
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Abstract: MMBC1009F4 MMBC1009F4 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 AM/FM RF AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM , Vce (sat) h Cob NF 90 150 2 2.5 Marking R F4 ^ B SAMSUNG SEMICONDUCTOR 510 , ^ o PACKAGE DIMENSIONS TO-3P Unit: mm EMBOSSED CARRIER Specification for SOT-23 Unit , TO-92 TAPING SPECIFICATION Unit: mm p Po p, p, w Wo W, W2 H H, 12.7 + 0.5 12.7+0.2 3 .8 5 ± , DIMENSIONS , * 1 ^ 1 - 2 0 TO-92 AMMO PACK Unit: mm FLAT SIDE OF TRANSISTOR and ... OCR Scan
datasheet

6 pages,
300.92 Kb

transistor marking SA p sot-23 MARKING 14E datasheet abstract
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Abstract: SAMSUNG SEMI CONDUCTOR INC MMBC1623L4 MMBC1623L4 AMPLIFIER TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR : - T SOT-23 - ^ - H ABSOLUTE MAXIMUM , V V V MHz hre Vce (sat) Vbe (sat) Vb£ (on) fr 90 0.6 200 Marking SAMSUNG , Specification for SOT-23 Unit: mm É SAMSUNG SEMICONDUCTOR 605 S AM S U N G SEMICONDUCTOR , , w Wo W, W2 H H, Ho 12.7 + 0.5 12.7+0.2 3 .8 5 ± 0 .5 6 .3 5 ± 0 .5 1 fi*15 0 10-0 6 ± 0 .5 ... OCR Scan
datasheet

6 pages,
303.12 Kb

MARKING W2 SOT23 TRANSISTOR MMBC1623L4 MMBC1623L4 abstract
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Abstract: EPITAXIAL SILICON TRANSISTOR -AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta= 2 5 °C ) Characteristic Collector-Base , Unit nA nA V V V MHz 300 Vce (sat) Vbe (sat) VB E (on) , T 0.6 200 Marking H _ L , CARRIER Specification for SOT-23 Unit: mm É SAMSUNG SEMICONDUCTOR 605 SAMS UN G S EM ICO , , w Wo W, W2 H H, Ho 12.7 + 0.5 12.7+0.2 3 .8 5 ± 0 .5 6 .3 5 ± 0 .5 1 fi*1 0 10 -0 5 6 ± 0 ... OCR Scan
datasheet

6 pages,
301.39 Kb

MARKING W2 SOT23 TRANSISTOR datasheet abstract
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Abstract: SAM SUN G SEMICONDUCTOR INC 14E D | 7 ^ 4 1 4 2 D0?a3t i 1 | MMBA811C6 MMBA811C6 DRIVER TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR ( SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic , Marking H C 6 ^ B SAMSUNG SEMICONDUCTOR 499 SAMSUNG SEMICONDUCTOR INC IME D 7 ^ , TO-3P Unit: mm EMBOSSED CARRIER Specification for SOT-23 Unit: mm É SAMSUNG SEMICONDUCTOR , Po P, p, w Wo W, W2 H H, Ho F F,-F, Do 12.7 + 0.5 12.7+0.2 3 .8 5 ± 0 .5 6 .3 5 ± 0 .5 1 fi ... OCR Scan
datasheet

6 pages,
304.04 Kb

MMBA811C6 MMBA811C6 abstract
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Abstract: TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base , V mA mW "C SOT-23 1. Base 2 . Emitter 3 . Collector ELECTRICAL CHARACTERISTICS (T .= 2 5 ` , nA nA V V hF E VC E (sat) V be (on) 135 Marking R · B M 5 tr~ SAMSUNG , for SOT-23 Unit: mm É SAMSUNG SEMICONDUCTOR 605 S AM S U N G SEMICONDUCTOR INC , CARRIER TAPE REELS Unit: mm TO-92 TAPING SPECIFICATION Unit: mm p Po p, p, w Wo W, W2 H H ... OCR Scan
datasheet

6 pages,
297.38 Kb

00Q7231 00Q7231 abstract
datasheet frame
Abstract: NPN EPITAXIAL SILICON TRANSISTOR T -3 1 -1 9 SOT-23 AM/FM RF AMPLIFIER TRANSISTOR ABSOLUTE , 100 80 0.3 Unit nA V MHz pF dB 40 150 2 2.5 U Cob NF Marking _EL F 2 y y SAMSUNG , CARRIER Specification for SOT-23 Unit: mm � SAMSUNG SEMICONDUCTOR 605 S AM S U N G , , w Wo W, W2 H H, 12.7 + 0.5 12.7+0.2 3 .8 5 � 0 .5 6 .3 5 � 0 .5 1 fi*15 0 10-0 6 � 0 .5 9 � 0 , 0 TO-92 AMMO PACK Unit: mm FLAT SIDE OF TRANSISTOR and ADHESIVE TAPE VISIBLE SAMSUNG'S ... OCR Scan
datasheet

6 pages,
299.9 Kb

datasheet abstract
datasheet frame
Abstract: TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta= 2 5 °C , 200 0.6 200 Marking SAMSUNG SEMICONDUCTOR 520 SAMSUNG SEMICONDUCTOR I NC H IE , DIMENSIONS TO-3P Unit: mm EMBOSSED CARRIER Specification for SOT-23 Unit: mm É SAMSUNG , Po p, p, w Wo W, W2 H H, Ho F F,-F, Do 12.7 + 0.5 12.7+0.2 3 .8 5 ± 0 .5 6 .3 5 ± 0 .5 1 fi , 2 0 TO-92 AMMO PACK Unit: mm FLAT SIDE OF TRANSISTOR and ADHESIVE TAPE VISIBLE ... OCR Scan
datasheet

6 pages,
300.88 Kb

MMBC1623L6 MARKING W2 SOT23 TRANSISTOR datasheet abstract
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www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (PBR951_5.pdf)
NXP 23/10/2012 16125.31 Kb ZIP microwave_office_design_kit_rf_smal_signal_products.zip