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MARKING HBT

Catalog Datasheet MFG & Type PDF Document Tags

J-STD-020 MSL Rating

Abstract: HBT MMIC Amplifier sot-86 InGaP HBT Gain Block ECG006 The Communications Edge TM Product Information Product , HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF , . ECG006B* ECG006B-G Description (lead-tin SOT-89 Pkg) InGaP HBT Gain Block InGaP HBT Gain Block , ECG006F-PCB InGaP HBT Gain Block (lead-tin SOT-86 Pkg) InGaP HBT Gain Block InGaP HBT Gain Block (lead-tin SOT-363 Pkg) Rating (lead-free/green/RoHS-compliant SOT-86 Pkg) InGaP HBT Gain Block
WJ Communications
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J-STD-020 MSL Rating HBT MMIC Amplifier sot-86 ECG006F ECG006F-G 1-800-WJ1-4401
Abstract: ECG006 The Communications Edge TM Product Information InGaP HBT Gain Block Product , consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT process technology and , . Description ¡ ¡ Parameter InGaP HBT Gain Block ECG006C-G InGaP HBT Gain Block ECG006F InGaP HBT Gain Block ECG006F-G InGaP HBT Gain Block ECG006B-PCB ECG006C-PCB ECG006F-PCB , Temperature Device Current RF Input Power (continuous) Junction Temperature InGaP HBT Gain Block WJ Communications
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Abstract: ECG002 The Communications Edge TM Product Information InGaP HBT Gain Block Product , of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT process technology and only , an input power level of -3 dBm. Part No. Description ¡ ¡ Parameter InGaP HBT Gain Block ECG002C-G InGaP HBT Gain Block ECG002F InGaP HBT Gain Block ECG002F-G InGaP HBT , ) Junction Temperature InGaP HBT Gain Block ECG002C Rating InGaP HBT Gain Block ECG002B-G WJ Communications
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ECG002B

ECG002B

Abstract: InGaP HBT Gain Block Product Description The ECG002 is a general-purpose buffer amplifier that , HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF , InGaP HBT Gain Block (lead-tin SOT-89 package) InGaP HBT Gain Block (lead-free/green/RoHS-compliant , HBT Gain Block (lead-tin SOT-86 package) InGaP HBT Gain Block (lead-free/green/RoHS-compliant SOT-86 package) Rating InGaP HBT Gain Block (lead-tin SOT-363 package) InGaP HBT Gain Block (lead-free
WJ Communications
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MARKING HBT

Abstract: SGA1263 SGA-1263(Z) SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD's SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier , -stage design that provides high isolation of up to 40dB at 2GHz and is fabricated using the latest SiGe HBT , PCS bands. Matching® Applied GaAs HBT DCto400MHz Operation Single Supply Voltage Excellent
RF Micro Devices
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SGA-1263Z MARKING HBT SGA1263 trace code marking RFMD InP HBT transistor 18 sot-363 rf power amplifier 4000MH 400MH 900MH DS090924
Abstract: ECG006 The Communications Edge TM Product Information InGaP HBT Gain Block Product , consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT process technology and , . Description ¡ ECG006B* ¡ ECG006B-G Parameter * InGaP HBT Gain Block ECG006F-G Operation of this device above any of these parameters may cause permanent damage. InGaP HBT Gain Block , Temperature Device Current RF Input Power (continuous) Junction Temperature InGaP HBT Gain Block WJ Communications
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Abstract: Internally matched to 50 The Communications Edge TM Product Information InGaP HBT Gain Block , InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an , InGaP HBT Gain Block (SOT-89 Pkg) InGaP HBT Gain Block (SOT-86 Pkg) InGaP HBT Gain Block (SOT-363 Pkg , Edge TM Product Information InGaP HBT Gain Block Typical Device RF Performance Supply Bias = +5 , = 45 mA The Communications Edge TM Product Information InGaP HBT Gain Block Recommended WJ Communications
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ECG006C

MMIC marking CODE c4

Abstract: Gain at 1 GHz The Communications Edge TM Product Information InGaP HBT Gain Block Product , dBm P1dB. The ECG005 consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT , ) Rating InGaP HBT Gain Block InGaP HBT Gain Block (lead-free/green/RoHS-compliant SOT-89 Pkg) InGaP HBT Gain Block (SOT-86 Pkg) 700 ­2400 MHz Fully Assembled Eval. Board 700 ­2400 MHz Fully Assembled , TM Product Information InGaP HBT Gain Block Typical Device RF Performance Supply Bias = +6 V
WJ Communications
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MMIC marking CODE c4 ECG005B ECG005B-G ECG005C

ECM011

Abstract: capacitor 6032 Transistor (HBT) process. It is optimized for cellular CDMA (digital) in the 824MHz to 849MHz band. It , .036" x .030" (.91mm x .76mm) Device Marking .062" +/- .004" (1.57 mm +/-0.10 mm) .232" +/- , ECM011 XXXX XXXX LOT NUMBER TOP VIEW WITH MARKING DIAGRAM SS-000398-000 Revision D EiC Corp , (digital) and AMPS (analog) handset market. The PAM utilizes InGaP HBT technology and a multi layer laminate base, over molded modular package with a LGA signal pad. I. In GaP HBT offers Reliability and
EiC
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capacitor 6032 MCH185A101JK 824MH 849MH AP-000513-000 AP-000516-000

SGA-1263Z

Abstract: SGA1263ZSQ SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD's SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers , provides high isolation of up to 40dB at 2GHz and is fabricated using the latest SiGe HBT 50GHz FT process , ® Applied GaAs HBT DCto4000MHz Operation Single Supply Voltage Excellent Isolation
RF Micro Devices
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SGA1263ZSQ PHEMT marking code a DS100916 SGA1263ZSR SGA1263Z-EVB1 850MH

trace code marking RFMD

Abstract: SGA-1263 SGA-1263(Z) SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD's SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier , -stage design that provides high isolation of up to 40dB at 2GHz and is fabricated using the latest SiGe HBT , PCS bands. Matching® Applied GaAs HBT DCto400MHz Operation Single Supply Voltage Excellent
RF Micro Devices
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Abstract: ECG001 The Communications Edge TM InGaP HBT Gain Block Product Features Product , the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a , °C Operation of this device above any of these parameters may cause permanent damage. InGaP HBT Gain Block ECG001C* Rating InGaP HBT Gain Block ECG001B-G Absolute Maximum Rating Description InGaP HBT Gain Block (lead-tin SOT-89 Pkg) (lead-free/green/RoHS-compliant SOT-89 Pkg WJ Communications
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ECG001F ECG001F-G

MMIC Amplifier Micro-X marking D

Abstract: d marking "Micro-X" amplifier. This 50 amplifier is based on a reliable HBT MMIC design, providing unsurpassed performance for , . 0.200 sq. Typ Optimum Technology Matching® Applied Si BJT GaAs HBT Si Bi-CMOS SiGe HBT InGaP/HBT GaN HEMT NOTES: 1. Shaded lead is pin 1. 2. Darkened areas are metallization , Reliable, Low-Cost HBT Design · 19.0dB Gain, +18.2dBm P1dB@1.0GHz · High P1dB of +17.9dBm@3.0GHz GND 4 N O T 0.040 + 0.002 · Single 6V Power Supply Operation MARKING - R2 · 50 I/O
RF Micro Devices
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MMIC Amplifier Micro-X marking D d marking "Micro-X" Micro-X Marking E GaAs Amplifier Micro-X Marking N micro-X ceramic Package hemt amplifier marking _1 RF3818 RF3818SB RF3818SR RF3818TR7 RF3818PCBA-410

ECM004

Abstract: was developed using EiC's own InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process , . Package Dimensions TOP VIEW Device Marking .062" +/- .004" (1.57 mm +/-0.10 mm) .232" +/- , ECM004 XXXX XXXX LOT NUMBER TOP VIEW WITH MARKING DIAGRAM SS-000371-000 Revision E EiC Corp , HBT collector. RF input port connects to internally matched 50 ohm circuit. Ref. Voltage for the , connects to the power amplifier stage HBT collector. RF out is internally matched to 50 ohms and expects a
EiC
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sot 23-5 marking code 162

Abstract: MMIC marking CODE c4 HBT Gain Block EC1019C (SOT-86 Package) Mechanical Information Outline Drawing Product Marking The , -89 Package Styles · Internally matched to 50 The Communications Edge TM Product Information InGaP HBT , Wireless The EC1019 consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT , EC1019B-PCB EC1019C-PCB Description InGaP HBT Gain Block (leaded SOT-89 Pkg) Rating InGaP HBT Gain Block (lead-free/green/RoHS-compliant SOT-89 Pkg) InGaP HBT Gain Block (SOT-86 Pkg) 700 ­ 2400 MHz
WJ Communications
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sot 23-5 marking code 162 EC1019B
Abstract: Package Styles · Internally matched to 50 The Communications Edge TM Product Information InGaP HBT , high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias , No. ECG040B ECG040B-G ECG040C ECG040B-PCB ECG040C-PCB Description InGaP HBT Gain Block (leaded SOT-89 Pkg) Rating InGaP HBT Gain Block (lead-free/green/RoHS-compliant SOT-89 Pkg) InGaP HBT Gain Block (SOT-86 Pkg) 700 ­2400 MHz Fully Assembled Eval. Board 700 ­2400 MHz Fully Assembled WJ Communications
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ECG040
Abstract: styles x Internally matched to 50 : The Communications Edge TM Product Information InGaP HBT Gain , reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and , SOT-89 Pkg) InGaP HBT Gain Block InGaP HBT Gain Block (lead-free/green/RoHS-compliant SOT-89 Pkg , ECG001C (5) ECG001F (5) Rating InGaP HBT Gain Block (lead-tin SOT-86 Pkg) InGaP HBT Gain Block (lead-tin SOT-363 Pkg) ECG001F-G ECG001B-PCB ECG001F-PCB InGaP HBT Gain Block 700 ­ 2400 MHz Fully WJ Communications
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ECG001B

ECG002C-G

Abstract: E002G ECG002 · · · · · · · · InGaP HBT Gain Block Product Features DC ­ 6 GHz 20 dB Gain @ 1 GHz , Darlington-pair amplifier using the high reliability InGaP/GaAs HBT process technology and only requires , Description InGaP HBT Gain Block InGaP HBT Gain Block InGaP HBT Gain Block (lead-free/green , Web site: www.TriQuint.com Page 1 of 7 May 2012 ECG002 InGaP HBT Gain Block Typical , : info-sales@tqs.com · Web site: www.TriQuint.com Page 2 of 7 May 2012 ECG002 InGaP HBT Gain Block
TriQuint Semiconductor
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E002G AG403-86G triquint ECG002B-G

2110 - 2170mhz power module

Abstract: ECM010 Transistor (HBT) process. It is optimized for WCDMA (digital) in the 1920 MHz to 1980 MHz band. It operates , PIN 6 RFout PIN 7 Gnd PIN 8 Gnd Device Marking .062" +/- .004" (1.57 mm +/-0.10 mm) .232" +/- , XXXX XXXX LOT NUMBER TOP VIEW WITH MARKING DIAGRAM EiC Corp. A Subsidiary of EiC Enterprises , (analog) handset market. The PAM utilizes InGaP HBT technology and a multi layer laminate base, over molded modular package with a LGA signal pad. I. In GaP HBT offers Reliability and Quality EiCs
EiC
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ECM010 2110 - 2170mhz power module PAE1 SS-000411-000

ECM028

Abstract: device was developed using EiC's own InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT , within this area.) X3 Device Marking .062" +/- .004" (1.57 mm +/-0.10 mm) 1 2 3 4 5 6 7 , MARKING DIAGRAM SS-000520-000 Revision E EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 , stage HBT collector. RF input port connects to internally matched 50 ohm circuit. Ref. Voltage for the , connects to the power amplifier stage HBT collector. RF out is internally matched to 50 ohms and expects a
EiC
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ECM028
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