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Part Manufacturer Description Datasheet BUY
HIP4083AB Intersil Corporation 3 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PDSO16 visit Intersil
TPIC44L02DBRG4 Texas Instruments 4-Channel Serial/Parallel Low-Side Pre-FET Driver 24-SSOP visit Texas Instruments
TPIC46L03DBRG4 Texas Instruments 6-Channel Serial/Parallel Low-Side Pre-FET Driver 28-SSOP visit Texas Instruments
TPIC46L03DBG4 Texas Instruments 6-Channel Serial/Parallel Low-Side Pre-FET Driver 28-SSOP visit Texas Instruments
TPIC44L02DBR Texas Instruments 4-Channel Serial/Parallel Low-Side Pre-FET Driver 24-SSOP visit Texas Instruments
TPIC44L02DBG4 Texas Instruments 4-Channel Serial/Parallel Low-Side Pre-FET Driver 24-SSOP visit Texas Instruments

MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Catalog Datasheet MFG & Type PDF Document Tags

STC4567

Abstract: MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology , SOP-8 package YYear AProduct code ORDERING INFORMATION Part Number Package Part Marking STC4567S8RG SOP-8 STC4567 Process Code : A ~ Z ; a ~ z STC4567S8RG S8 : SOP-8 ; R : Tape Reel ; G , loss and resistance to transient are needed. PIN CONFIGURATION SOP-8 PART MARKING FEATURE , 10A / -10A TYPICAL CHARACTERICTICS (N MOS) STANSON TECHNOLOGY 120 Bentley Square, Mountain View
Stanson Technology
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MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR N and P MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET mosfet 10V 10A

MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Abstract: SOP8 mos n P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology , loss and resistance to transient are needed. PIN CONFIGURATION SOP-8 PART MARKING SOP , SOP-8 package ORDERING INFORMATION Part Number Package Part Marking STC4539S8RG SOP-8 STC4539 STC4539S8TG SOP-8 STC4539 Process Code : A ~ Z ; a ~ z STC4539S8RG S8 : SOP-8 ; R , CHARACTERICTICS (N MOS) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA
Stanson Technology
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SOP8 mos n Mos MARKING CODE 24V 1A mosfet 25NC12

80N055

Abstract: date code marking NEC PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP80N055MLE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP80N055MLE is N-channel MOS Field Effect Transistor designed for high , connected between the gate and source of the transistor serves as a protector against ESD. When this device , NP80N055MLE MARKING INFORMATION NEC 80N055 LE Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS Process Wave soldering Conditions Maximum temperature
NEC
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date code marking NEC code marking NEC NEC TRANSISTOR MARKING CODE nec 80N055 nec 2502 4 pin 80n05 MP-25K

NEC TRANSISTOR MARKING CODE

Abstract: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP55N03SUG SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP55N03SUG is N-channel MOS Field Effect , UG Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING , -3ZK) 2500 p/reel Typ. 0.27 g Transistor designed for high current switching applications. FEATURES , Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate
NEC
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N P CHANNEL dual POWER MOSFET

Abstract: marking code dual gate mos DESCRIPTION STC4516 is the complementary enhancement mode power field effect transistor using high cell , : Year Code 3 S2 4 G2 A: Process Code N-Channel MOSFET P-Channel MOSFET ORDERING INFORMATION Part Number Package Part Marking STC4516S8RG SOP-8 STC4516 STC4516S8TG SOP-8 STC4516 Process Code : A ~ Z ; a ~ z STC4516S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb ­ Free , CHARACHTERISTICS (N MOS) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http
Stanson Technology
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STC5416 N P CHANNEL dual POWER MOSFET marking code dual gate mos MOSFET dual SOP-8 P channel MOSFET 50A complementary mosfet Dual Enhancement Mode MOSFET

STC6614

Abstract: P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology , , RDS(ON) = 60m (Typ.) @VGS = -10V -60V/-3.0A, RDS(ON)= 80m @VGS = -4.5V PART MARKING Super , capability SOP-8 package Yâ¶Year Aâ¶Product Code Q︰Process Code STANSON TECHNOLOGY 120 Bentley , TYPICAL CHARACTERICTICS (N MOS) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA , 7.0A / -5.0A TYPICAL CHARACTERICTICS (N MOS) STANSON TECHNOLOGY 120 Bentley Square, Mountain View
Stanson Technology
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STC6614

MOSFET 20V 100A

Abstract: P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology , loss and resistance to transient are needed. PIN CONFIGURATION SOP-8 PART MARKING FEATURE , maximum DC current capability ! SOP-8 package Yâ¶Year Aâ¶Product code B:wafer Code STANSON , 10.0A / -10.0A TYPICAL CHARACTERICTICS (N MOS) STANSON TECHNOLOGY 120 Bentley Square, Mountain View , N&P Pair Enhancement Mode MOSFET 10.0A / -10.0A TYPICAL CHARACTERICTICS (N MOS) STANSON
Stanson Technology
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MOSFET 20V 100A STC4614

stc4606

Abstract: stc*4606 P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology , loss and resistance to transient are needed. PIN CONFIGURATION SOP-8 PART MARKING SOP , current capability l SOP-8 package YYear ADate Code STANSON TECHNOLOGY 120 Bentley Square , MOSFET 6.9A / -6.0A TYPICAL CHARACTERICTICS (N MOS) STANSON TECHNOLOGY 120 Bentley Square , Mode MOSFET 6.9A / -6.0A TYPICAL CHARACTERICTICS (N MOS) STANSON TECHNOLOGY 120 Bentley Square
Stanson Technology
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stc4606 stc*4606 30V 60A power p MOSFET stc4606 MOSFET mosfet p 30v 60a 20V 60A power p MOSFET STC4606 STC4606LG

STC4606

Abstract: P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology , /6.9A, RDS(ON) = 30mΩï¼Typ) @VGS = 10V 30V/6.0A, RDS(ON) = 46mΩ @VGS = 4.5V PART MARKING SOP , current capability SOP-8 package Yâ¶Year Aâ¶Date Code STANSON TECHNOLOGY 120 Bentley Square , MOS) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com , / -6.9A TYPICAL CHARACTERICTICS (N MOS) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca
Stanson Technology
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MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Abstract: Toshiba 2SJ 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications Unit: mm · · · High breakdown voltage: VDSS = 180 V High forward transfer admittance: |Yfs| = 0.7 S (typ.) Complementary to 2SJ338 Maximum Ratings (Ta = 25°C) Characteristic , transistor is an electrostatic-sensitive device. Handle with care. Marking K2162 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-03-04
Toshiba
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Toshiba 2SJ SC-64

d1941

Abstract: K4144 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4144 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4144 is N-channel MOS Field Effect Transistor designed for high current switching , Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS The , in the "Find what:" field. 2008 2SK4144 ELECTRICAL CHARACTERISTICS (TA = 25 , and source of the transistor serves as a protector against ESD. When this device actually used, an
NEC
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d1941 K4144 ke marking transistor transistor K4144 P300 2SK41 2SK4144-AZ 2SK4144-S12-AZ

w34 transistor

Abstract: W34 SOT-89 Product specification WNM2034 N-Channel, 20V, 3.6A, Power MOSFET VDS (V) 20 Rdson ( ) 0.037 @ 10V 0.045 @ 4.5V Descriptions SOT-23 The WNM2034 is N-Channel enhancement MOS D Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON , * Extremely Low Threshold Voltage Small package SOT-23 W34 = Device Code * = Month (A~Z) Applications Marking Driver for Relay, Solenoid, Motor, LED etc. Order Information DC-DC converter
TY Semiconductor
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w34 transistor W34 SOT-89 WNM2034-3/TR 3000/T

WNM2025

Abstract: Product specification WNM2025 Single N-Channel, 20V, 3.9 A, Power MOSFET VDS (V) Rds(on) (â"¦) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 20 0.036@ VGS=1.8V SOT-23-3L Descriptions D 3 The WNM2025 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench , high density cell design 2 1 Excellent ON resistance for higher DC current W25 = Device Code Extremely Low Threshold Voltage * = Month (A~Z) Small package SOT-23-3L Marking Applications
TY Semiconductor
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WNM2025-3/TR 3000/R

transistor WT3

Abstract: Product specification WNM3003 N-Channel, 30V, 4.0A, Power MOSFET V(BR)DSS Rds(on) ( ) 0.033@ 10V 30V 0.033@ 10V 0.043 @ 4.5V SOT-23 D Descriptions 3 The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS , DC current WT3 Small package SOT-23 = Device Code * Extremely Low Threshold Voltage = Month (A~Z) Marking Applications Order Information Driver for Relay, Solenoid, Motor, LED etc
TY Semiconductor
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transistor WT3 WNM3003-3/TR
Abstract: Product specification WNM2020 N-Channel, 20V, 0.90A, Small Signal MOSFET VDS (V) Rds(on) ( ) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 20 0.320@ VGS=1.8V SOT-23 Descriptions The WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) D 3 with low gate charge. This device is suitable for use , -23 W28 = Device Code * Applications = Month (A~Z) Marking Order information DC-DC converter TY Semiconductor
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WNM2020-3/TR
Abstract: Product specification WNM4006 Single N-Channel, 45V, 1.7A, Power MOSFET VDS (V) Rds(on) ( ) 0.126@ VGS=10V 45 0.142@ VGS=4.5V 0.147@ VGS=4.0V 0.208@ VGS=2.5V SOT-23 Descriptions D 3 The WNM4006 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use , * Small package SOT-23 = Device Code = Month (A~Z) Applications Marking Order information TY Semiconductor
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WNM4006-3/TR
Abstract: Product specification WNM2024 Single N-Channel, 20V, 3.9A, Power MOSFET VDS (V) Rds(on) (â"¦) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 20 0.036@ VGS=1.8V SOT-23 Descriptions D 3 The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench , high density cell design 2 1 Excellent ON resistance for higher DC current W24 = Device Code Extremely Low Threshold Voltage * = Month (A~Z) Small package SOT-23 Marking Applications TY Semiconductor
Original
WNM2024-3/TR

transistor WT6

Abstract: WT6 SOT23 MARKING Product specification WNM2027 N-Channel, 20V, 3.6A, Power MOSFET Id (Max. m ) (A) 3.6 55 @ 2.5V 3.1 66 @ 1.8V 20 Rds(on) 45 @ 4.5V V(BR)DSS 1.5 SOT-23 D Descriptions 3 The WNM2027 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable , -23 = Device Code * Extremely Low Threshold Voltage = Month (A~Z) Marking Applications
TY Semiconductor
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transistor WT6 WT6 SOT23 MARKING transistor WT6 45 WNM2027-3/TR
Abstract: Product specification WNM2016 N-Channel, 20V, 3.2A, Power MOSFET V(BR)DSS Rds(on) 40 @ 4.5V 20 47 @ 2.5V 55 @ 1.8V SOT-23 D Descriptions 3 The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS , higher DC current 2 WT6 Small package SOT-23 = Device Code * Extremely Low Threshold Voltage = Month (A~Z) Marking Applications Order Information Driver for Relay, Solenoid TY Semiconductor
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WNM2016-3/TR

transistor w04

Abstract: marking W04 Product specification WNM2023 Single N-Channel, 20V, 3.2A, Power MOSFET VDS (V) Rds(on) (â"¦) 0.038@ VGS=4.5V 0.044@ VGS=2.5V 20 0.052@ VGS=1.8V SOT-23-3L Descriptions D 3 The WNM2023 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench , high density cell design 2 1 Excellent ON resistance for higher DC current W04 = Device Code Extremely Low Threshold Voltage * = Month (A~Z) Small package SOT-23-3L Marking Applications
TY Semiconductor
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transistor w04 marking W04 transistor SOT-23 w04 w04 transistor sot 23 w04 sot marking CODE W04 sot-23 WNM2023-3/TR
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